JP2000058534A - Substrate heat treatment device - Google Patents
Substrate heat treatment deviceInfo
- Publication number
- JP2000058534A JP2000058534A JP10227118A JP22711898A JP2000058534A JP 2000058534 A JP2000058534 A JP 2000058534A JP 10227118 A JP10227118 A JP 10227118A JP 22711898 A JP22711898 A JP 22711898A JP 2000058534 A JP2000058534 A JP 2000058534A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plate
- gas
- heat treatment
- treatment apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 204
- 238000010438 heat treatment Methods 0.000 title claims description 45
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 38
- 239000001272 nitrous oxide Substances 0.000 claims description 19
- 239000011358 absorbing material Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000011179 visual inspection Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 15
- 230000008859 change Effects 0.000 abstract description 8
- 230000010748 Photoabsorption Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 92
- 239000000463 material Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 102100021604 Ephrin type-A receptor 6 Human genes 0.000 description 1
- 101000898696 Homo sapiens Ephrin type-A receptor 6 Proteins 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体ウエハ、
フォトマスク用ガラス基板、液晶表示用ガラス基板、光
ディスク用基板等の基板（以下、単に「基板」とい
う。）に熱処理を施す基板熱処理装置に関する。[0001] The present invention relates to a semiconductor wafer,
The present invention relates to a substrate heat treatment apparatus that performs heat treatment on a substrate (hereinafter, simply referred to as a “substrate”) such as a glass substrate for a photomask, a glass substrate for a liquid crystal display, and a substrate for an optical disk.
【０００２】[0002]
【従来の技術】図６は従来の光照射型の基板熱処理装置
の概略構成を説明するための図である。図６に示すよう
に従来の基板熱処理装置は、光透過性材料で構成された
偏平形状の処理室９１を水平に設置し、上下に配置した
光源（図示せず）より光を照射し、処理室９１内に水平
に保持した被処理基板Ｗを加熱する。その際、処理中の
雰囲気となるガスは処理室９１の一方端に設けられたガ
ス導入口９２より導入し、他方端に設けられた排気口９
３より排出する構造となっている。つまり、被処理基板
Ｗの周囲には図示のような方向性を持った雰囲気ガスの
流れＧＳａを形成している。2. Description of the Related Art FIG. 6 is a view for explaining a schematic configuration of a conventional light irradiation type substrate heat treatment apparatus. As shown in FIG. 6, the conventional substrate heat treatment apparatus horizontally installs a flat processing chamber 91 made of a light-transmitting material, and irradiates light from a light source (not shown) arranged vertically to perform processing. The processing target substrate W held horizontally in the chamber 91 is heated. At this time, a gas serving as an atmosphere during the processing is introduced from a gas inlet 92 provided at one end of the processing chamber 91, and an exhaust port 9 provided at the other end.
3 to discharge. That is, the flow GSa of the atmospheric gas having the directionality as shown in the drawing is formed around the substrate W to be processed.
【０００３】このような加熱を伴う基板処理の例とし
て、半導体製造の分野における基板表面の絶縁膜に窒素
原子を導入することによる絶縁膜の形成処理がある。こ
の基板処理では膜質改善技術が研究され、その処理雰囲
気として亜酸化窒素（Ｎ2Ｏ等）ガスが利用されるに及
び、以下のような処理不均一の問題が注目されている。
すなわち、処理室９１内に導入された亜酸化窒素ガス
は、基板の周囲において複数の形に熱分解されながら基
板との熱化学反応を生ずる。したがって、基板Ｗの周囲
のガスとそれ以外におけるガスとの間ではガスの組成が
異なる場合が多い。As an example of such substrate processing involving heating, there is a process of forming an insulating film by introducing nitrogen atoms into the insulating film on the substrate surface in the field of semiconductor manufacturing. In this substrate processing, a technique for improving the film quality has been studied, and nitrous oxide (N 2 O, etc.) gas has been used as the processing atmosphere.
That is, the nitrous oxide gas introduced into the processing chamber 91 undergoes a thermochemical reaction with the substrate while being thermally decomposed into a plurality of shapes around the substrate. Therefore, in many cases, the composition of the gas is different between the gas around the substrate W and the other gas.
【０００４】[0004]
【発明が解決しようとする課題】ところで、処理室９１
下部の内壁面において熱せられた亜酸化窒素ガスは上昇
し、ガス流ＧＳｂとなって基板Ｗの下面に至る。とりわ
け、基板Ｗの周縁においては、基板Ｗ下面に至ったそれ
らのガスが上昇しようとするため乱流が生じ、対流によ
り基板Ｗに至ったガスと、それと組成の異なる基板Ｗの
周囲のガスとが混ざり合って基板処理に不均一が生じて
いた。By the way, the processing chamber 91
The nitrous oxide gas heated on the lower inner wall surface rises and forms a gas flow GSb and reaches the lower surface of the substrate W. In particular, at the peripheral edge of the substrate W, those gases reaching the lower surface of the substrate W tend to rise, causing turbulence, and the gas reaching the substrate W by convection and the gas around the substrate W having a different composition from the gas. Mixed together, resulting in non-uniform substrate processing.
【０００５】この発明は、従来技術における上述の問題
の克服を意図しており、均一な基板処理を行うことがで
きる基板熱処理装置を提供することを目的とする。An object of the present invention is to overcome the above-mentioned problems in the prior art and to provide a substrate heat treatment apparatus capable of performing uniform substrate processing.
【０００６】[0006]
【課題を解決するための手段】上記の目的を達成するた
め、この発明の請求項１に記載の装置は、基板に熱処理
を施す基板熱処理装置であって、(a) 基板を収容する処
理室と、(b) 基板を加熱する加熱手段と、(c) 処理室内
にて基板を支持する支持手段と、(d) ガス導入口から処
理室内に導入した熱分解性ガスを排気口から排気するこ
とにより支持手段に支持された基板とほぼ平行な熱分解
性ガスのガス流を形成するガス流形成手段と、(e) 支持
手段に支持された基板の被処理面に対向するとともに、
当該被処理面に近接する板状部材と、を備える。According to a first aspect of the present invention, there is provided an apparatus for heat-treating a substrate, comprising: (a) a processing chamber for accommodating a substrate; (B) heating means for heating the substrate, (c) supporting means for supporting the substrate in the processing chamber, and (d) exhausting the pyrolytic gas introduced into the processing chamber from the gas inlet through the exhaust port. Gas flow forming means for forming a gas flow of a pyrolyzable gas substantially parallel to the substrate supported by the supporting means, and (e) facing the surface to be processed of the substrate supported by the supporting means,
A plate-shaped member adjacent to the surface to be processed.
【０００７】また、この発明の請求項２に記載の装置
は、請求項１に記載の基板熱処理装置であって、支持手
段が基板をほぼ水平に支持するものであり、板状部材が
支持手段に支持された基板を平面視でほぼ覆うものであ
ることを特徴とする。According to a second aspect of the present invention, there is provided the apparatus for heat treating a substrate according to the first aspect, wherein the supporting means supports the substrate substantially horizontally, and the plate-like member comprises the supporting means. Characterized in that it substantially covers the substrate supported by the substrate in plan view.
【０００８】また、この発明の請求項３に記載の装置
は、請求項１に記載の基板熱処理装置であって、支持手
段が基板をほぼ水平に支持するものであり、板状部材が
平面視で処理室内全体をほぼ覆うものであることを特徴
とする。According to a third aspect of the present invention, there is provided the substrate heat treatment apparatus according to the first aspect, wherein the supporting means supports the substrate substantially horizontally, and the plate-like member is viewed in plan. And substantially covers the entire processing chamber.
【０００９】また、この発明の請求項４に記載の装置
は、請求項１ないし請求項３のいずれかに記載の基板熱
処理装置であって、加熱手段が光照射により加熱するも
のであり、板状部材が光吸収性材料により形成されてい
ることを特徴とする。According to a fourth aspect of the present invention, there is provided the apparatus for heat treating a substrate according to any one of the first to third aspects, wherein the heating means heats the substrate by light irradiation. The shape member is formed of a light absorbing material.
【００１０】さらに、この発明の請求項５に記載の装置
は、請求項１ないし請求項４のいずれかに記載の基板熱
処理装置であって、熱分解性ガスが亜酸化窒素ガスであ
ることを特徴とする。Further, the apparatus according to claim 5 of the present invention is the substrate heat treatment apparatus according to any one of claims 1 to 4, wherein the thermally decomposable gas is nitrous oxide gas. Features.
【００１１】[0011]
【発明の実施の形態】以下、この発明の実施の形態を図
面に基づいて説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１２】＜１．実施の形態の装置構成＞図１は、本
発明に係る基板熱処理装置を示す部分縦断面図である。<1. FIG. 1 is a partial longitudinal sectional view showing a substrate heat treatment apparatus according to the present invention.
【００１３】炉壁５５の内部にはチャンバ（処理室）１
０および複数のランプ２０が設けられている。また、チ
ャンバ１０の前側（図１における右側）には炉口ブロッ
ク５０が設けられている。ランプ２０としては、赤外線
ランプ、ハロゲンランプ、キセノンアークランプ等が使
用される。チャンバ１０は、光を透過させる性質の材料
（石英等）を用いて構成されており、ランプ２０から照
射された光をその内部に透過させる。チャンバ１０と炉
壁５５および炉口ブロック５０との接続部分にはそれぞ
れＯリング５５ａおよびＯリング５０ｂが設けられてお
り、チャンバ１０内部の気密性が保てる構造とされてい
る。A chamber (processing chamber) 1 is provided inside the furnace wall 55.
Zero and a plurality of lamps 20 are provided. A furnace port block 50 is provided on the front side (the right side in FIG. 1) of the chamber 10. As the lamp 20, an infrared lamp, a halogen lamp, a xenon arc lamp, or the like is used. The chamber 10 is formed using a material having a property of transmitting light (quartz or the like), and transmits light emitted from the lamp 20 to the inside thereof. An O-ring 55a and an O-ring 50b are provided at connection portions of the chamber 10, the furnace wall 55, and the furnace port block 50, respectively, so that the inside of the chamber 10 can be kept airtight.
【００１４】移動フランジ３０にはサセプタ（支持手
段）３５が固設されている。サセプタ３５の各所上面に
は支柱３７が設けられており、それら支柱３７により板
状部材４０がほぼ水平姿勢にてサセプタ３５に載置され
る。なお、板状部材４０の形状等については後述する。
また、サセプタ３５は３本の支持ピン３６を備えており
（図１および図３の側面図では２本のみ図示）、それら
支持ピン３６によって処理対象の基板Ｗが略水平姿勢に
て支持される。A susceptor (support means) 35 is fixed to the moving flange 30. Prop columns 37 are provided on the upper surface of each part of the susceptor 35, and the plate members 40 are placed on the susceptor 35 in a substantially horizontal posture by the support columns 37. The shape and the like of the plate member 40 will be described later.
The susceptor 35 has three support pins 36 (only two are shown in the side views of FIGS. 1 and 3), and the substrate W to be processed is supported by the support pins 36 in a substantially horizontal posture. .
【００１５】そして、移動フランジ３０は、水平方向
（図１中のＸ軸方向）に移動可能に構成されている。移
動フランジ３０に固設されたサセプタ３５は板状部材４
０が載置されるとともに、基板Ｗを支持しているため、
移動フランジ３０の移動に伴って板状部材４０および基
板ＷもＸ軸の正負方向に移動する。すなわち、移動フラ
ンジ３０に固設されたサセプタ３５は、板状部材４０を
支持し、かつ基板Ｗを支持した状態でチャンバ１０への
進入および退出を行うのである。The movable flange 30 is configured to be movable in a horizontal direction (X-axis direction in FIG. 1). The susceptor 35 fixed to the moving flange 30 is
0 is placed and supports the substrate W,
As the moving flange 30 moves, the plate member 40 and the substrate W also move in the positive and negative directions of the X axis. That is, the susceptor 35 fixed to the movable flange 30 supports the plate member 40 and enters and exits the chamber 10 while supporting the substrate W.
【００１６】移動フランジ３０がチャンバ１０側に移動
し、炉口ブロック５０に当接すると、炉口が塞がれると
ともに、基板Ｗがチャンバ１０内の所定位置に略水平に
収容・保持される。そして、この状態にてランプ２０か
ら光照射を行うことにより基板Ｗの加熱処理が行われる
のである。なお、炉口ブロック５０にはＯリング５０ａ
が設けられており、移動フランジ３０が炉口ブロック５
０に当接した状態においては、Ｏリング５０ａによって
チャンバ１０内部の気密性が維持される。When the movable flange 30 moves toward the chamber 10 and comes into contact with the furnace port block 50, the furnace port is closed and the substrate W is stored and held substantially horizontally at a predetermined position in the chamber 10. Then, by performing light irradiation from the lamp 20 in this state, the heat treatment of the substrate W is performed. The furnace opening block 50 has an O-ring 50a.
Is provided, and the moving flange 30 is
In the state where the chamber is in contact with zero, the airtightness of the inside of the chamber 10 is maintained by the O-ring 50a.
【００１７】一方、移動フランジ３０がチャンバ１０と
は反対側に移動すると、炉口が開放され、さらに移動フ
ランジ３０が移動することにより基板Ｗがチャンバ１０
および炉口ブロック５０の外側に引き出される。そし
て、この状態においては、装置外部の基板搬送ロボット
（図示省略）とサセプタ３５との間で基板Ｗの受け渡し
（未処理の基板Ｗと処理済み基板Ｗとの交換作業）が行
われるのである。On the other hand, when the moving flange 30 moves to the opposite side to the chamber 10, the furnace port is opened, and the moving flange 30 further moves to move the substrate W into the chamber 10.
And it is drawn out of the furnace opening block 50. In this state, the transfer of the substrate W (replacement of the unprocessed substrate W and the processed substrate W) is performed between the substrate transfer robot (not shown) and the susceptor 35 outside the apparatus.
【００１８】既述したように、基板Ｗの加熱処理中は、
加熱された基板Ｗに対して膜形成等の処理を施すため、
周辺雰囲気を熱分解性の亜酸化窒素（Ｎ2Ｏ等）ガス
（熱分解性ガス）により満たすとともに、ほぼ水平方向
の亜酸化窒素ガスのガス流をチャンバ１０内に形成する
必要がある。そのため、本実施の形態の基板熱処理装置
には、ガス流形成手段としてガス導入口６０およびガス
排気口７０が設けられている。ガス導入口６０は、炉壁
５５およびチャンバ１０の端部を貫通して設けられてお
り、装置外部のガス供給手段に連通されている。また、
ガス排気口７０は、炉口ブロック５０を貫通して設けら
れており、装置外部の排気手段に連通されている。そし
て、ガス導入口６０から導入された亜酸化窒素ガスは、
チャンバ１０内を流れ、ガス排気口７０から排気される
ことによりチャンバ１０内にガス流ＧＳを形成する。す
なわち、図１に示すように、ガス導入口６０側である上
流側ＵＳからガス排気口７０側の下流側ＤＳに向けて亜
酸化窒素ガスが流れるのである。As described above, during the heat treatment of the substrate W,
In order to perform processing such as film formation on the heated substrate W,
It is necessary to fill the surrounding atmosphere with a thermally decomposable nitrous oxide (such as N 2 O) gas (a thermally decomposable gas) and to form a substantially horizontal nitrous oxide gas flow in the chamber 10. Therefore, in the substrate heat treatment apparatus of the present embodiment, a gas inlet 60 and a gas outlet 70 are provided as gas flow forming means. The gas inlet 60 is provided through the furnace wall 55 and the end of the chamber 10 and communicates with gas supply means outside the apparatus. Also,
The gas exhaust port 70 is provided so as to penetrate the furnace port block 50, and communicates with exhaust means outside the apparatus. Then, the nitrous oxide gas introduced from the gas inlet 60 is
A gas flow GS is formed in the chamber 10 by flowing through the chamber 10 and being exhausted from the gas exhaust port 70. That is, as shown in FIG. 1, the nitrous oxide gas flows from the upstream side US, which is the gas inlet port 60 side, to the downstream side DS, which is the gas exhaust port 70 side.
【００１９】＜２．実施の形態の処理および特徴＞以上
のような概略構成を有する基板熱処理装置において、加
熱処理を行うときは、まず移動フランジ３０が図１中の
Ｘ軸の正側に移動した状態において、基板搬送ロボット
からサセプタ３５に未処理の基板Ｗが渡される。そし
て、移動フランジ３０がチャンバ１０に向けて（Ｘ軸の
負方向）移動し、チャンバ１０内の所定位置に基板Ｗが
収容・保持される（図１の実線の状態）。<2. Processing and Features of Embodiment> In the substrate heat treatment apparatus having the schematic configuration as described above, when performing the heat treatment, first, the substrate is transferred while the moving flange 30 is moved to the positive side of the X axis in FIG. The unprocessed substrate W is transferred from the robot to the susceptor 35. Then, the moving flange 30 moves toward the chamber 10 (negative direction of the X axis), and the substrate W is stored and held at a predetermined position in the chamber 10 (the state of the solid line in FIG. 1).
【００２０】次に、ガス導入口６０から導入されたガス
がガス排気口７０から排気されてチャンバ１０内に基板
Ｗと略平行のガス流ＧＳを形成するとともに、基板Ｗに
対して複数のランプ２０からの光照射が行われて加熱処
理が実行される。このとき、板状部材４０は基板Ｗとと
もにチャンバ１０内に搬入されて、基板Ｗとともに加熱
され、基板Ｗとともに搬出される。Next, the gas introduced from the gas introduction port 60 is exhausted from the gas exhaust port 70 to form a gas flow GS substantially parallel to the substrate W in the chamber 10 and a plurality of lamps for the substrate W. Light irradiation from 20 is performed, and a heating process is performed. At this time, the plate member 40 is carried into the chamber 10 together with the substrate W, heated with the substrate W, and carried out with the substrate W.
【００２１】図２および図３は、サセプタ３５に板状部
材４０および基板Ｗが支持された状態を示す水平断面図
および部分側面図である。サセプタ３５は、２本の平行
棒状部３５ａ，３５ａと一部切欠きを有する円環状部３
５ｂとを組み合わせた部材である。そして、サセプタ３
５の円環状部３５ｂの内側には基板Ｗをほぼ水平に支持
する３本の支持ピン３６が設けられている。2 and 3 are a horizontal sectional view and a partial side view showing a state where the plate member 40 and the substrate W are supported by the susceptor 35. FIG. The susceptor 35 includes two parallel rod-shaped portions 35a, 35a and an annular portion 3 having a cutout.
5b. And the susceptor 3
Five support pins 36 for supporting the substrate W substantially horizontally are provided inside the fifth annular portion 35b.
【００２２】ここで、板状部材４０の形状、材質および
機能についてさらに説明する。板状部材４０は、その外
縁がチャンバ１０の内部水平断面とほぼ一致し（ほぼ合
同）、したがって、平面視でチャンバ１０内全面をほぼ
覆うものとなっている。Here, the shape, material and function of the plate member 40 will be further described. The outer edge of the plate-shaped member 40 substantially coincides with (substantially coincides with) the internal horizontal cross section of the chamber 10, and thus substantially covers the entire surface of the chamber 10 in plan view.
【００２３】また、板状部材４０は、支持ピン３６に支
持された基板Ｗの被処理面ＯＳに近接してサセプタ３５
にほぼ水平に載置される。すなわち、この実施の形態で
は基板Ｗをその被処理面ＯＳを下方に向けて支持ピン３
６により支持するのであるが、その際の基板Ｗの下方に
おいて基板Ｗに近接する高さに板状部材４０が支柱３７
によりサセプタ３５に載置されるものとなっている。な
お、板状部材４０のサセプタ３５の各支持ピン３６に対
応する位置には、それら支持ピン３６を板状部材４０に
対して貫通させるための穴４０ａが設けられており、板
状部材４０をサセプタ３５に載置した状態で支持ピン３
６の先端に基板Ｗを支持する。そして支柱３７および支
持ピン３６のそれぞれの高さが、板状部材４０と基板Ｗ
とが互いに近接するように形成されているのである。そ
のため、チャンバ１０の内部下面におて熱せられた雰囲
気が対流により上昇しても、直接基板Ｗに被処理面ＯＳ
に至ることはなく、また、基板Ｗと板状部材４０とに温
度差がほとんど生じないため、空間ＳＰ内の雰囲気には
対流が生じにくい。したがって、組成の異なるガスが基
板Ｗの被処理面ＯＳに至ることがほとんどない。なお、
基板Ｗの被処理面ＯＳと板状部材４０との間隔は３〜２
０ｍｍ程度が好ましく、５〜６ｍｍ程度が理想的な範囲
となっている。The plate-shaped member 40 is provided near the susceptor 35 near the processing surface OS of the substrate W supported by the support pins 36.
Placed almost horizontally. That is, in this embodiment, the substrate W is supported by the support pins 3 with its processing surface OS facing downward.
6, and the plate-like member 40 is supported at a height below the substrate W and close to the substrate W.
Are mounted on the susceptor 35. At a position corresponding to each support pin 36 of the susceptor 35 of the plate-shaped member 40, a hole 40a for allowing the support pin 36 to pass through the plate-shaped member 40 is provided. With the support pins 3 placed on the susceptor 35,
The substrate W is supported on the tip of the substrate 6. The heights of the support pillars 37 and the support pins 36 correspond to the plate members 40 and the substrate W, respectively.
Are formed so as to be close to each other. Therefore, even if the atmosphere heated on the inner lower surface of the chamber 10 rises due to convection, the surface to be processed OS
And the temperature difference between the substrate W and the plate member 40 hardly occurs, so that convection hardly occurs in the atmosphere in the space SP. Therefore, gases having different compositions hardly reach the processing surface OS of the substrate W. In addition,
The distance between the processing surface OS of the substrate W and the plate member 40 is 3 to 2
About 0 mm is preferable, and about 5 to 6 mm is an ideal range.
【００２４】ところで、本実施の形態の板状部材４０
は、光吸収性および熱伝導性がよく、化学的に安定した
材料であるＳｉＣ製であり、特に半導体製造の分野でＳ
ｉ基板の製造等に対して適したものとなっている。板状
部材４０はこのような特性を有するため、基板Ｗの加熱
処理中、板状部材４０も加熱され、それにより、ガス導
入口６０から導入される亜酸化窒素ガスはチャンバ１０
の上流側ＵＳから基板Ｗに至るまでの間に板状部材４０
により加熱されて、その分解が進行し、基板Ｗに至る頃
には基板Ｗの温度における化学的に平衡な状態に近い組
成比のものとされる。そのため、基板Ｗ上においては、
亜酸化窒素ガスの組成の変化が少なくなる。By the way, the plate-like member 40 of the present embodiment
Is made of SiC, which is a chemically stable material having good light absorption and heat conductivity.
It is suitable for the manufacture of i-substrate and the like. Since the plate-shaped member 40 has such characteristics, the plate-shaped member 40 is also heated during the heat treatment of the substrate W, so that the nitrous oxide gas introduced from the gas inlet 60 is supplied to the chamber 10.
Between the upstream side US and the substrate W
, The decomposition proceeds, and by the time it reaches the substrate W, it has a composition ratio close to a chemically equilibrium state at the temperature of the substrate W. Therefore, on the substrate W,
Changes in the composition of the nitrous oxide gas are reduced.
【００２５】また、上記のように板状部材４０は基板Ｗ
と近接してサセプタ３５により支持されるので、ガスの
粘性により基板Ｗと板状部材４０との間の空間ＳＰ内に
おけるガス流ＧＳ1は緩やかなものとなる。そのため、
空間ＳＰ内のガス流ＧＳ1に含まれるガスはその組成が
ほぼ均一なものとなっている。Further, as described above, the plate member 40 is
The gas flow GS1 in the space SP between the substrate W and the plate member 40 becomes gentle due to the viscosity of the gas. for that reason,
The gas contained in the gas flow GS1 in the space SP has a substantially uniform composition.
【００２６】また、板状部材４０は上記のように平面視
でチャンバ１０内全面をほぼ覆うものとなっているた
め、基板Ｗ周縁での乱流の発生を抑えることができ、ま
た、板状部材４０は前述のように熱伝導性が高いため、
基板Ｗに対向した面内において均一な温度分布となる。
そのため、基板Ｗとの間の空間ＳＰ内の雰囲気（亜酸化
窒素ガス）を均一に加熱することができ、空間ＳＰ内の
雰囲気の熱膨張によりその空間ＳＰ内のガス圧がその外
部の空間のガス圧に対して高くなり、空間ＳＰ内への雰
囲気の巻き込みを生じにくい。そのため空間ＳＰ内のガ
ス流ＧＳ1を一層均一にすることができる。Further, since the plate-like member 40 substantially covers the entire surface of the chamber 10 in plan view as described above, the generation of turbulent flow at the periphery of the substrate W can be suppressed. Since the member 40 has high thermal conductivity as described above,
A uniform temperature distribution is obtained in the plane facing the substrate W.
For this reason, the atmosphere (nitrous oxide gas) in the space SP between the substrate W and the substrate W can be uniformly heated, and the gas pressure in the space SP increases due to the thermal expansion of the atmosphere in the space SP. It becomes high with respect to the gas pressure, and it is hard to cause entrainment of the atmosphere into the space SP. Therefore, the gas flow GS1 in the space SP can be made more uniform.
【００２７】さらに、前述のように基板Ｗとチャンバ１
０内壁との間には温度差が生じ易く、その温度差は基板
Ｗとチャンバ１０内壁との間の亜酸化窒素ガスに対流を
生じさせ易い。すなわち、水平方向のガス流ＧＳ，ＧＳ
1に対して垂直な方向のガス流ＧＳ2を生じ易い。したが
って、このガス流ＧＳ2に含まれるガスの組成はガス流
ＧＳ1に含まれるガスの組成とは異なっているが、ガス
流ＧＳ2は板状部材４０により阻まれ、基板Ｗの被処理
面ＯＳに至ることがほとんどない。なお、この実施の形
態の装置では、板状部材４０が基板Ｗと近接しており、
平衡状態では両者はほぼ等しい温度であると考えられる
ため、空間ＳＰ内においてはガスの対流はほとんど生じ
ないものと考えられる。Further, as described above, the substrate W and the chamber 1
A temperature difference easily occurs between the substrate W and the inner wall of the chamber 10, and the temperature difference easily causes convection in the nitrous oxide gas between the substrate W and the inner wall of the chamber 10. That is, the horizontal gas flows GS, GS
The gas flow GS2 in the direction perpendicular to 1 is easily generated. Therefore, the composition of the gas contained in the gas flow GS2 is different from the composition of the gas contained in the gas flow GS1, but the gas flow GS2 is blocked by the plate-shaped member 40 and reaches the processing surface OS of the substrate W. There are few things. In the apparatus according to the present embodiment, the plate member 40 is close to the substrate W,
In the equilibrium state, the two are considered to have substantially the same temperature, so that it is considered that almost no gas convection occurs in the space SP.
【００２８】また、上述のように板状部材４０は支持ピ
ン３６に支持された基板Ｗに近接しているので、基板Ｗ
の周縁から放熱された場合に、板状部材４０のその部分
に近い部分からの熱輻射により基板Ｗの周縁部に熱を補
うことで、基板Ｗの周縁の温度低下を防止する「熱補償
手段」としての機能をも有している。Further, as described above, since the plate member 40 is close to the substrate W supported by the support pins 36, the plate W
When heat is radiated from the peripheral edge of the substrate W, the peripheral portion of the substrate W is supplemented with heat by heat radiation from a portion close to that portion of the plate-shaped member 40, thereby preventing a temperature decrease of the peripheral edge of the substrate W. Has a function as "".
【００２９】以上により、基板Ｗに対して均一な基板処
理を行うことができる。図４は、この実施の形態による
基板処理の均一性を説明する図であり、図４（ａ）およ
び図４（ｂ）はそれぞれ従来装置および実施の形態の装
置により基板の被処理面に形成された膜厚分布を示して
いる。図中には基板の被処理面を表わすＸ−Ｙ平面と、
基板の被処理面に形成された膜厚を示すＺ軸とからなる
Ｘ−Ｙ−Ｚ座標が定義されている。図４（ａ）と図４
（ｂ）を比較すると明らかなように、この実施の形態の
装置を用いることにより膜厚の均一性すなわち、基板処
理の均一性の著しい向上が認められる。As described above, uniform substrate processing can be performed on the substrate W. FIGS. 4A and 4B are diagrams for explaining the uniformity of substrate processing according to this embodiment. FIGS. 4A and 4B show a conventional apparatus and an apparatus according to the embodiment, respectively, which are formed on a surface to be processed of a substrate. 3 shows the obtained film thickness distribution. In the figure, an XY plane representing a surface to be processed of the substrate,
XYZ coordinates are defined, which are made up of the Z axis indicating the film thickness formed on the surface to be processed of the substrate. FIG. 4A and FIG.
As is clear from the comparison of (b), the use of the apparatus of the present embodiment shows a remarkable improvement in the uniformity of the film thickness, that is, the uniformity of the substrate processing.
【００３０】処理の説明に戻る。基板Ｗの加熱処理が終
了すると、移動フランジ３０が図１のＸ軸正方向に移動
し、基板Ｗがチャンバ１０および炉口ブロック５０の外
側に出される。そして、基板搬送ロボットがサセプタ３
５から処理済み基板Ｗを取り出すことによって、一連の
加熱処理が終了する。Returning to the description of the processing. When the heating process of the substrate W is completed, the moving flange 30 moves in the positive direction of the X axis in FIG. 1, and the substrate W is taken out of the chamber 10 and the furnace port block 50. Then, the substrate transfer robot moves the susceptor 3
By taking out the processed substrate W from 5, a series of heat treatments is completed.
【００３１】また、本実施の形態の基板熱処理装置にお
いては、サセプタ３５が板状部材４０を載置し、基板Ｗ
を支持した状態でチャンバ１０への進入および退出を行
う。従って、次に未処理の基板Ｗをサセプタ３５にて受
け取る際に、サセプタ３５及び板状部材４０が常にチャ
ンバ１０内にある場合に比較して、サセプタ３５および
板状部材４０の温度がある程度低下しており、基板Ｗに
急激な温度変化を与えるのを防止することができる。Further, in the substrate heat treatment apparatus of the present embodiment, the susceptor 35 places the plate member 40 thereon and
Is entered and exited with the chamber supported. Therefore, when the next unprocessed substrate W is received by the susceptor 35, the temperature of the susceptor 35 and the plate-shaped member 40 is reduced to some extent as compared with the case where the susceptor 35 and the plate-shaped member 40 are always in the chamber 10. Thus, it is possible to prevent the substrate W from undergoing a rapid temperature change.
【００３２】以上説明したように、この実施の形態の基
板熱処理装置によれば、サセプタ３５に支持された基板
Ｗの被処理面ＯＳに対向するとともに、当該被処理面Ｏ
Ｓに近接する板状部材４０を備えるため、基板Ｗと板状
部材４０との間に温度差がほとんど生じないので、基板
Ｗと板状部材４０との間の空間ＳＰ内の雰囲気に対流が
生じにくく、また、空間ＳＰ以外の雰囲気も基板Ｗの被
処理面ＯＳに直接至ることも少ないため、組成の異なる
亜酸化窒素ガス（一般に熱分解性ガス。以下同様）が基
板Ｗの被処理面ＯＳに至ることが少ないので、均一な基
板処理を行うことができる。また、基板Ｗと板状部材４
０との間における基板Ｗの被処理面ＯＳと平行な熱分解
性ガスの流れを緩やかにできるので、ガス流ＧＳ1中の
亜酸化窒素ガスの組成をほぼ一定にすることができるた
め、より均一な基板処理を行うことができる。さらに、
従来装置に比して板状部材４０を備えるだけの簡単な機
構の変更のみであるので、基板の回転機構等の大がかり
な機構の変更が不要となり、低コストで均一な処理を実
現できる。As described above, according to the substrate heat treatment apparatus of this embodiment, the substrate W supported by the susceptor 35 faces the surface OS to be processed and
Since the plate member 40 close to S is provided, there is almost no temperature difference between the substrate W and the plate member 40, so that convection occurs in the atmosphere in the space SP between the substrate W and the plate member 40. Since it is unlikely to occur, and the atmosphere other than the space SP rarely reaches the processing surface OS of the substrate W directly, nitrous oxide gas having a different composition (generally, a thermally decomposable gas; the same applies hereinafter) is applied to the processing surface of the substrate W. Since it does not reach the OS, uniform substrate processing can be performed. Further, the substrate W and the plate-like member 4
Since the flow of the thermally decomposable gas parallel to the processing surface OS of the substrate W between 0 and 0 can be moderated, the composition of the nitrous oxide gas in the gas flow GS1 can be made substantially constant, so that a more uniform Substrate processing can be performed. further,
Compared to the conventional apparatus, only a simple change of the mechanism including the plate-shaped member 40 is required. Therefore, it is not necessary to change a large-scale mechanism such as a substrate rotation mechanism, and uniform processing can be realized at low cost.
【００３３】また、板状部材４０がサセプタ３５にほぼ
水平に支持された基板Ｗを平面視で覆うものであるた
め、基板Ｗの被処理面ＯＳ全体に対して均一なガス流Ｇ
Ｓ1を形成することができ、基板Ｗ全面において均一な
基板処理を行うことができる。Further, since the plate member 40 covers the substrate W supported substantially horizontally by the susceptor 35 in a plan view, a uniform gas flow G is applied to the entire processing surface OS of the substrate W.
S1 can be formed, and uniform substrate processing can be performed on the entire surface of the substrate W.
【００３４】また、板状部材４０が平面視でチャンバ１
０内全体をほぼ覆うため、チャンバ１０全体におけるガ
ス流ＧＳを整流し、とりわけ基板Ｗの周縁におけるガス
流の巻き込み等の乱れを抑えて、より均一な基板処理を
行うことができる。また、ガス流ＧＳが基板Ｗに対して
上流側ＵＳにおいて板状部材４０の近傍を通過する間に
亜酸化窒素ガス（一般に熱分解性ガス）の化学的な分解
が進行し、基板Ｗに達する際にはほぼ化学的に平衡状態
に達するので、基板回転手段やガス供給経路等の大掛か
りな機構を必要としない簡単な装置構成で、基板位置を
流れる間の亜酸化窒素ガスの分解の度合いの変化を抑え
て均一な処理を行うことができる。Further, the plate-like member 40 is formed in the chamber 1 in plan view.
Since the entirety of the inside of the chamber 10 is almost covered, the gas flow GS in the entire chamber 10 is rectified, and in particular, disturbance such as entrainment of the gas flow at the peripheral edge of the substrate W can be suppressed, and more uniform substrate processing can be performed. Further, while the gas flow GS passes near the plate member 40 on the upstream side US with respect to the substrate W, the chemical decomposition of the nitrous oxide gas (generally a thermally decomposable gas) proceeds, and reaches the substrate W. In this case, since the state reaches a chemically equilibrium state, the degree of decomposition of the nitrous oxide gas during the flow through the substrate position can be reduced by a simple apparatus configuration that does not require a large-scale mechanism such as a substrate rotating means and a gas supply path. A uniform process can be performed while suppressing a change.
【００３５】また、このような板状部材４０がサセプタ
３５に支持された基板Ｗと近接した位置に支持されるた
め、基板Ｗの周縁からの放熱を補うことができ、基板Ｗ
の温度を面内均一に保ってより均一な基板処理を行うこ
とができる。また、板状部材４０が、光吸収性および熱
伝導性のよい材料で形成されているので、基板Ｗととも
に温度上昇することにより、基板Ｗの上流側ＵＳにおけ
る亜酸化窒素ガスの化学的な分解の進行をその時点での
基板Ｗの温度における平衡状態近くにまで進行させるこ
とができ、基板Ｗ近傍を通過中のガスの組成変化を少な
くして、より均一な基板処理を行うことができる。Further, since such a plate-shaped member 40 is supported at a position close to the substrate W supported by the susceptor 35, heat radiation from the periphery of the substrate W can be compensated, and
The substrate temperature can be kept uniform in the plane to perform more uniform substrate processing. Further, since the plate-shaped member 40 is formed of a material having good light absorption and heat conductivity, the temperature is increased together with the substrate W, whereby the nitrous oxide gas is chemically decomposed in the upstream US of the substrate W. Can be advanced to near the equilibrium state at the temperature of the substrate W at that time, and a change in the composition of the gas passing near the substrate W can be reduced, and more uniform substrate processing can be performed.
【００３６】さらに、板状部材４０をサセプタ３５に取
付け、基板Ｗを支持したサセプタ３５とともにチャンバ
１０に対して出し入れするため、板状部材をチャンバ内
に常設する場合のように板状部材が常に高温であること
がないので、基板Ｗの搬入時にも基板Ｗとの温度差が少
なく、基板Ｗの処理品質に悪影響を及ぼすことが少な
い。Further, since the plate-like member 40 is attached to the susceptor 35 and is taken in and out of the chamber 10 together with the susceptor 35 supporting the substrate W, the plate-like member is always in the same state as in the case where the plate-like member is permanently installed in the chamber. Since the temperature is not high, the temperature difference between the substrate W and the substrate W is small even when the substrate W is carried in, and the processing quality of the substrate W is not adversely affected.
【００３７】＜３．変形例＞以上、本発明の実施の形態
について説明したが、この発明は上記の例に限定される
ものではない。<3. Modifications> While the preferred embodiments of the present invention have been described above, the present invention is not limited to the above-described examples.
【００３８】例えば、上記実施の形態においては、基板
Ｗの被処理面ＯＳを下方に向けて、それに対向するよう
に基板Ｗの下方において近接するように板状部材４０を
設けるものとしたが、基板Ｗの被処理面ＯＳを上方に向
けて、板状部材を基板Ｗの上方において近接して設ける
ものとしてもよい。For example, in the above-described embodiment, the plate-shaped member 40 is provided so that the surface to be processed OS of the substrate W faces downward, and is located below and close to the substrate W so as to face the surface OS. The plate-shaped member may be provided close to and above the substrate W with the processing surface OS of the substrate W facing upward.
【００３９】また、上記実施の形態では板状部材４０を
チャンバ１０の内部断面を覆い尽くすものとしたが、こ
の変形例の板状部材を説明する図５に示すように、板状
部材４１のように基板Ｗとほぼ一致する程度の大きさの
ものとする等、その他の大きさのものとしてもよく、さ
らには板状部材の外形は上記実施の形態のような長方形
や、図５のような円形以外にも多角形等その他の形状と
してもよい。In the above embodiment, the plate-like member 40 covers the internal cross section of the chamber 10. However, as shown in FIG. The size of the plate-shaped member may be of a size that is substantially the same as the substrate W, or may be of another size. Other shapes such as a polygon other than a simple circle may be used.
【００４０】また、上記実施の形態では板状部材４０を
サセプタ３５に取付け、基板Ｗとともにチャンバ１０に
対して出し入れするものとしたが、板状部材および基板
の支持手段をチャンバ内に常設するものとして、基板の
みを出し入れするものとしてもよい。In the above embodiment, the plate-like member 40 is attached to the susceptor 35, and is taken in and out of the chamber 10 together with the substrate W. However, the plate-like member and the substrate support means are permanently provided in the chamber. Alternatively, only the substrate may be taken in and out.
【００４１】また、上記実施の形態ではサセプタ３５に
支持ピン３６を設けて、それにより基板Ｗを支持した
が、板状部材に支持ピンを直接取り付けて、それにより
基板を支持するものとしてもよい。In the above-described embodiment, the support pins 36 are provided on the susceptor 35 to support the substrate W. However, the support pins may be directly attached to the plate member to support the substrate. .
【００４２】また、上記実施の形態では熱処理に使用す
る熱分解性ガスを亜酸化窒素ガスとしたが、熱分解性の
ガスであれば塩化水素ガス等その他のガスを用いてもよ
い。In the above-described embodiment, nitrous oxide gas is used as the thermally decomposable gas used for the heat treatment. However, any other gas such as hydrogen chloride gas may be used as long as it is a thermally decomposable gas.
【００４３】さらに、上記実施の形態では板状部材４０
を光吸収性、熱伝導性の良好な材料であるＳｉＣ製とし
たが、光吸収性、熱伝導性の良好な材料であればＳｉ，
ポリシリコン等その他の材質のものとしてもよい。Further, in the above embodiment, the plate member 40
Is made of SiC, which is a material having good light absorption and heat conductivity. However, if the material has good light absorption and heat conductivity, Si,
Other materials such as polysilicon may be used.
【００４４】[0044]
【発明の効果】以上説明したように、請求項１ないし請
求項５の発明によれば、支持手段に支持された基板の被
処理面に対向するとともに、当該被処理面に近接する板
状部材を備えるため、基板と板状部材との間に温度差が
ほとんど生じないので、基板と板状部材の間の雰囲気に
対流が生じにくく、また、基板と板状部材との間以外の
雰囲気が基板の被処理面に至ることも少ないため、組成
の異なる熱分解性ガスが基板の被処理面に至ることが少
ないので、均一な基板処理を行うことができる。また、
基板と板状部材との間における基板の被処理面と平行な
熱分解性ガスの流れを緩やかにできるので、ガス流中の
熱分解性ガスの組成をほぼ一定にすることができるた
め、より均一な基板処理を行うことができる。さらに、
板状部材を備えるだけの簡単な機構の変更でよいので、
基板の回転機構等の大がかりな機構の変更が不要とな
り、低コストで均一な処理を実現できる。As described above, according to the first to fifth aspects of the present invention, the plate-shaped member opposed to the surface to be processed of the substrate supported by the support means and close to the surface to be processed is provided. Because there is almost no temperature difference between the substrate and the plate-like member, convection hardly occurs in the atmosphere between the substrate and the plate-like member. Since the heat-decomposable gas having a different composition hardly reaches the surface to be processed of the substrate since the heat treatment hardly reaches the surface to be processed of the substrate, uniform substrate processing can be performed. Also,
Since the flow of the thermally decomposable gas parallel to the surface to be processed of the substrate between the substrate and the plate member can be moderated, the composition of the thermally decomposable gas in the gas flow can be made substantially constant, so that Uniform substrate processing can be performed. further,
Since it is enough to change the mechanism simply by providing a plate member,
It is not necessary to change a large-scale mechanism such as a substrate rotation mechanism, and uniform processing can be realized at low cost.
【００４５】また、とくに請求項２の発明によれば、板
状部材が支持手段にほぼ水平に支持された基板を平面視
でほぼ覆うものであるため、基板の被処理面全体に対し
て均一なガス流を形成することができ、基板全面におい
て均一な基板処理を行うことができる。According to the second aspect of the present invention, since the plate-like member substantially covers the substrate supported substantially horizontally by the support means in plan view, the plate-like member uniformly covers the entire surface to be processed of the substrate. Therefore, a uniform gas flow can be formed, and uniform substrate processing can be performed on the entire surface of the substrate.
【００４６】また、とくに請求項３の発明によれば、板
状部材が平面視で処理室内全体をほぼ覆うため、処理室
全体におけるガス流を整流し、とりわけ基板の周縁にお
けるガス流の巻き込み等の乱れを抑えてより均一な基板
処理を行うことができる。According to the third aspect of the present invention, since the plate-like member substantially covers the entire processing chamber in plan view, the gas flow in the entire processing chamber is rectified, and in particular, the gas flow in the periphery of the substrate is involved. And more uniform substrate processing can be performed.
【００４７】さらに、とくに請求項４の発明によれば、
加熱手段が光照射により加熱するものであり、板状部材
が光吸収性材料により形成されているため、基板の被処
理面を加熱手段からの直接の光によってではなく、その
光によって加熱された板状部材による２次輻射によって
基板を加熱するため、基板の被処理面の加熱を緩やかに
行うことができるので、より均一な基板処理を行うこと
ができる。Furthermore, according to the invention of claim 4,
The heating means heats by light irradiation, and the plate-shaped member is formed of a light-absorbing material, so that the surface to be processed of the substrate is heated not by the direct light from the heating means but by the light. Since the substrate is heated by the secondary radiation from the plate-like member, the surface to be processed of the substrate can be moderately heated, so that more uniform substrate processing can be performed.
【図１】本発明に係る基板熱処理装置を示す部分縦断面
図である。FIG. 1 is a partial longitudinal sectional view showing a substrate heat treatment apparatus according to the present invention.
【図２】サセプタに板状部材および基板が支持された状
態を示す水平断面図である。FIG. 2 is a horizontal sectional view showing a state where a plate member and a substrate are supported on a susceptor.
【図３】サセプタに板状部材および基板が支持された状
態を示す側面図である。FIG. 3 is a side view showing a state where a plate member and a substrate are supported by a susceptor.
【図４】この実施の形態による基板処理の均一性を説明
する図である。FIG. 4 is a diagram illustrating uniformity of substrate processing according to the embodiment.
【図５】変形例の板状部材を説明する図である。FIG. 5 is a diagram illustrating a plate-shaped member according to a modified example.
【図６】従来より用いられていた基板熱処理装置を示す
側面図である。FIG. 6 is a side view illustrating a conventionally used substrate heat treatment apparatus.
１０ チャンバ（処理室） ２０ ランプ（加熱手段） ３５ サセプタ（支持手段） ４０ 板状部材 ６０ ガス導入口 ７０ ガス排気口（６０と併せてガス流形成手段） Ｗ 基板 Reference Signs List 10 chamber (processing chamber) 20 lamp (heating means) 35 susceptor (supporting means) 40 plate member 60 gas inlet 70 gas exhaust port (gas flow forming means together with 60) W substrate
フロントページの続き (72)発明者 西原 英夫 京都市伏見区羽束師古川町322番地 大日 本スクリーン製造株式会社洛西事業所内 Ｆターム(参考） 5F045 AA03 DP04 EE20 EF14 EF20 EK12 EM06 Continued on the front page (72) Inventor Hideo Nishihara 322 Hashinashi Furukawacho, Fushimi-ku, Kyoto Dainichi Screen Manufacturing Co., Ltd. F-term (reference) 5F045 AA03 DP04 EE20 EF14 EF20 EK12 EM06
Claims (5)
って、 (a) 基板を収容する処理室と、 (b) 前記基板を加熱する加熱手段と、 (c) 前記処理室内にて前記基板を支持する支持手段と、 (d) ガス導入口から前記処理室内に導入した熱分解性ガ
スを排気口から排気することにより前記支持手段に支持
された前記基板とほぼ平行な前記熱分解性ガスのガス流
を形成するガス流形成手段と、 (e) 前記支持手段に支持された前記基板の被処理面に対
向するとともに、当該被処理面に近接する板状部材と、
を備えることを特徴とする基板熱処理装置。1. A substrate heat treatment apparatus for performing heat treatment on a substrate, comprising: (a) a processing chamber for accommodating the substrate; (b) heating means for heating the substrate; and (c) the substrate in the processing chamber. (D) the thermally decomposable gas substantially parallel to the substrate supported by the support means by exhausting the thermally decomposable gas introduced into the processing chamber from a gas inlet through an exhaust port. Gas flow forming means for forming a gas flow of (e) a plate-shaped member opposed to the processing surface of the substrate supported by the support means, and close to the processing surface,
A substrate heat treatment apparatus comprising:
て、 前記支持手段が前記基板をほぼ水平に支持するものであ
り、 前記板状部材が前記支持手段に支持された前記基板を平
面視でほぼ覆うものであることを特徴とする基板熱処理
装置。2. The substrate heat treatment apparatus according to claim 1, wherein said support means supports said substrate substantially horizontally, and said plate-like member planarly supports said substrate supported by said support means. A substrate heat treatment apparatus characterized in that the heat treatment apparatus is substantially covered by visual inspection.
て、 前記支持手段が前記基板をほぼ水平に支持するものであ
り、 前記板状部材が平面視で前記処理室内全体をほぼ覆うも
のであることを特徴とする基板熱処理装置。3. The substrate heat treatment apparatus according to claim 1, wherein the support means supports the substrate substantially horizontally, and the plate-like member substantially covers the entire processing chamber in plan view. A substrate heat treatment apparatus, characterized in that:
載の基板熱処理装置であって、 前記加熱手段が光照射により加熱するものであり、 前記板状部材が光吸収性材料により形成されていること
を特徴とする基板熱処理装置。4. The substrate heat treatment apparatus according to claim 1, wherein said heating means heats by irradiating light, and said plate member is formed of a light absorbing material. A substrate heat treatment apparatus.
載の基板熱処理装置であって、 前記熱分解性ガスが亜酸化窒素ガスであることを特徴と
する基板熱処理装置。5. The substrate heat treatment apparatus according to claim 1, wherein the thermally decomposable gas is a nitrous oxide gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22711898A JP3907842B2 (en) | 1998-08-11 | 1998-08-11 | Substrate heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22711898A JP3907842B2 (en) | 1998-08-11 | 1998-08-11 | Substrate heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000058534A true JP2000058534A (en) | 2000-02-25 |
| JP3907842B2 JP3907842B2 (en) | 2007-04-18 |
Family
ID=16855768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22711898A Expired - Fee Related JP3907842B2 (en) | 1998-08-11 | 1998-08-11 | Substrate heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3907842B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002289664A (en) * | 2001-03-26 | 2002-10-04 | Toray Ind Inc | Substrate carrying hand and substrate carrying method, color filter manufacturing apparatus using these and manufacturing method thereof |
| JP2003289045A (en) * | 2002-03-28 | 2003-10-10 | Shin Etsu Handotai Co Ltd | Suscepter, and device for manufacturing epitaxial wafer and method for manufacturing epitaxial wafer |
| JP2010509780A (en) * | 2006-11-15 | 2010-03-25 | マトソン テクノロジー カナダ インコーポレイテッド | System and method for supporting a workpiece during heat treatment |
| US9070590B2 (en) | 2008-05-16 | 2015-06-30 | Mattson Technology, Inc. | Workpiece breakage prevention method and apparatus |
| US9627244B2 (en) | 2002-12-20 | 2017-04-18 | Mattson Technology, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
| KR20170097961A (en) * | 2016-02-19 | 2017-08-29 | 한국전자통신연구원 | Apparatus for injecting impurities and a metohd of forming n-type semiconducor diamond using the same |
| USRE48871E1 (en) | 2003-04-29 | 2022-01-04 | Asm Ip Holding B.V. | Method and apparatus for depositing thin films on a surface |
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1998
- 1998-08-11 JP JP22711898A patent/JP3907842B2/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002289664A (en) * | 2001-03-26 | 2002-10-04 | Toray Ind Inc | Substrate carrying hand and substrate carrying method, color filter manufacturing apparatus using these and manufacturing method thereof |
| JP2003289045A (en) * | 2002-03-28 | 2003-10-10 | Shin Etsu Handotai Co Ltd | Suscepter, and device for manufacturing epitaxial wafer and method for manufacturing epitaxial wafer |
| US9627244B2 (en) | 2002-12-20 | 2017-04-18 | Mattson Technology, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
| USRE48871E1 (en) | 2003-04-29 | 2022-01-04 | Asm Ip Holding B.V. | Method and apparatus for depositing thin films on a surface |
| JP2010509780A (en) * | 2006-11-15 | 2010-03-25 | マトソン テクノロジー カナダ インコーポレイテッド | System and method for supporting a workpiece during heat treatment |
| JP2015065458A (en) * | 2006-11-15 | 2015-04-09 | マトソン テクノロジー、インコーポレイテッド | System and method for supporting work-piece during heat-treating |
| US9070590B2 (en) | 2008-05-16 | 2015-06-30 | Mattson Technology, Inc. | Workpiece breakage prevention method and apparatus |
| KR20170097961A (en) * | 2016-02-19 | 2017-08-29 | 한국전자통신연구원 | Apparatus for injecting impurities and a metohd of forming n-type semiconducor diamond using the same |
| KR102374639B1 (en) | 2016-02-19 | 2022-03-16 | 한국전자통신연구원 | Apparatus for injecting impurities and a metohd of forming n-type semiconducor diamond using the same |
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| Publication number | Publication date |
|---|---|
| JP3907842B2 (en) | 2007-04-18 |
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