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ITUB20160556A1 - Suscettore con perno riscaldato e reattore per deposizione epitassiale - Google Patents

Suscettore con perno riscaldato e reattore per deposizione epitassiale

Info

Publication number
ITUB20160556A1
ITUB20160556A1 ITUB2016A000556A ITUB20160556A ITUB20160556A1 IT UB20160556 A1 ITUB20160556 A1 IT UB20160556A1 IT UB2016A000556 A ITUB2016A000556 A IT UB2016A000556A IT UB20160556 A ITUB20160556 A IT UB20160556A IT UB20160556 A1 ITUB20160556 A1 IT UB20160556A1
Authority
IT
Italy
Prior art keywords
suscector
reactor
epitaxial deposition
heated pin
pin
Prior art date
Application number
ITUB2016A000556A
Other languages
English (en)
Inventor
Vincenzo Ogliari
Michele Forzan
Silvio Preti
Original Assignee
L P E S P A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by L P E S P A filed Critical L P E S P A
Priority to ITUB2016A000556A priority Critical patent/ITUB20160556A1/it
Priority to US16/076,057 priority patent/US20210189594A1/en
Priority to JP2018541208A priority patent/JP7082573B2/ja
Priority to PCT/IB2017/050565 priority patent/WO2017137872A1/en
Priority to CN201780010340.4A priority patent/CN108779576A/zh
Priority to EP17711323.0A priority patent/EP3414366B1/en
Publication of ITUB20160556A1 publication Critical patent/ITUB20160556A1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
    • H05B6/108—Induction heating apparatus, other than furnaces, for specific applications using a susceptor for heating a fluid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
ITUB2016A000556A 2016-02-08 2016-02-08 Suscettore con perno riscaldato e reattore per deposizione epitassiale ITUB20160556A1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
ITUB2016A000556A ITUB20160556A1 (it) 2016-02-08 2016-02-08 Suscettore con perno riscaldato e reattore per deposizione epitassiale
US16/076,057 US20210189594A1 (en) 2016-02-08 2017-02-02 Inductively heatable susceptor and epitaxial deposition reactor
JP2018541208A JP7082573B2 (ja) 2016-02-08 2017-02-02 誘導加熱可能なサセプタ及びエピタキシャル堆積リアクタ
PCT/IB2017/050565 WO2017137872A1 (en) 2016-02-08 2017-02-02 Inductively heatable susceptor and epitaxial deposition reactor
CN201780010340.4A CN108779576A (zh) 2016-02-08 2017-02-02 可感应加热的基座和外延沉积反应器
EP17711323.0A EP3414366B1 (en) 2016-02-08 2017-02-02 Inductively heatable susceptor and epitaxial deposition reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITUB2016A000556A ITUB20160556A1 (it) 2016-02-08 2016-02-08 Suscettore con perno riscaldato e reattore per deposizione epitassiale

Publications (1)

Publication Number Publication Date
ITUB20160556A1 true ITUB20160556A1 (it) 2017-08-08

Family

ID=55969254

Family Applications (1)

Application Number Title Priority Date Filing Date
ITUB2016A000556A ITUB20160556A1 (it) 2016-02-08 2016-02-08 Suscettore con perno riscaldato e reattore per deposizione epitassiale

Country Status (6)

Country Link
US (1) US20210189594A1 (it)
EP (1) EP3414366B1 (it)
JP (1) JP7082573B2 (it)
CN (1) CN108779576A (it)
IT (1) ITUB20160556A1 (it)
WO (1) WO2017137872A1 (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110023537B (zh) * 2016-09-19 2021-11-16 阿卜杜拉国王科技大学 基座
US20220025519A1 (en) * 2018-10-26 2022-01-27 Lpe S.P.A. Deposition reactor with inductors and electromagnetic shields
WO2020139030A1 (ko) * 2018-12-28 2020-07-02 주식회사 테스 서셉터 어셈블리, 이를 포함하는 mocvd 장치 및 mocvd 장치로부터 상측 서셉터를 인출하기 위한 제어 방법
KR20190005818A (ko) * 2018-12-28 2019-01-16 주식회사 테스 서셉터 어셈블리 및 이를 포함하는 mocvd 장치
IT201900022047A1 (it) * 2019-11-25 2021-05-25 Lpe Spa Dispositivo di supporto substrati per una camera di reazione di un reattore epitassiale con rotazione a flusso di gas, camera di reazione e reattore epitassiale
US20220210872A1 (en) * 2020-12-31 2022-06-30 Globalwafers Co., Ltd. System and methods for a radiant heat cap in a semiconductor wafer reactor
IT202100014984A1 (it) 2021-06-09 2022-12-09 Lpe Spa Camera di reazione con sistema di rivestimento e reattore epitassiale
CN113846374A (zh) * 2021-11-29 2021-12-28 山西中科潞安紫外光电科技有限公司 一种mocvd设备的加热系统及mocvd设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
US5897380A (en) * 1994-11-09 1999-04-27 Tokyo Electron Limited Method for isolating a susceptor heating element from a chemical vapor deposition environment
WO2001055479A1 (en) * 2000-01-31 2001-08-02 Mattson Technology, Inc. Apparatus and method for epitaxially processing a substrate
WO2006108783A1 (en) * 2005-04-14 2006-10-19 Lpe S.P.A. Susceptor for epitaxial reactors and tool for the handling thereof
WO2009049020A2 (en) * 2007-10-11 2009-04-16 Valence Process Equipment, Inc. Chemical vapor deposition reactor
US20130125820A1 (en) * 2011-11-23 2013-05-23 Gerald Zheyao Yin Chemical vapor deposition or epitaxial-layer growth reactor and supporter thereof

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JPH05198514A (ja) * 1992-01-20 1993-08-06 Toshiba Corp 枚葉型エピタキシャル成長装置
US6031211A (en) * 1997-07-11 2000-02-29 Concept Systems Design, Inc. Zone heating system with feedback control
US6118100A (en) * 1997-11-26 2000-09-12 Mattson Technology, Inc. Susceptor hold-down mechanism
JPH11163102A (ja) * 1997-11-27 1999-06-18 Kokusai Electric Co Ltd 半導体製造装置用サセプタ
US6506252B2 (en) 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
US7985295B1 (en) * 2006-04-06 2011-07-26 Structured Materials Inc. RF heater arrangement for substrate heating apparatus
US20110259879A1 (en) * 2010-04-22 2011-10-27 Applied Materials, Inc. Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers
CN101922042B (zh) * 2010-08-19 2012-05-30 江苏中晟半导体设备有限公司 一种外延片托盘支撑旋转联接装置
CN101906622B (zh) * 2010-08-20 2013-03-20 江苏中晟半导体设备有限公司 用于mocvd系统中控制外延片温度及均匀性的装置与方法
US20120148760A1 (en) * 2010-12-08 2012-06-14 Glen Eric Egami Induction Heating for Substrate Processing
CN102347258B (zh) * 2011-09-19 2013-01-09 东莞市中镓半导体科技有限公司 一种用于半导体外延系统的基座
CN103540912B (zh) * 2012-07-09 2016-06-08 中晟光电设备（上海）股份有限公司 Mocvd设备及该设备中的托盘支撑旋转系统
CN103628046B (zh) * 2012-08-24 2015-11-11 中微半导体设备(上海)有限公司 一种调节基片表面温度的控温系统和控温方法
JP6094813B2 (ja) * 2013-09-02 2017-03-15 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
CN103614709B (zh) * 2013-12-12 2015-10-07 济南大学 用于mocvd反应室的组合基座式电磁加热装置
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
US5897380A (en) * 1994-11-09 1999-04-27 Tokyo Electron Limited Method for isolating a susceptor heating element from a chemical vapor deposition environment
WO2001055479A1 (en) * 2000-01-31 2001-08-02 Mattson Technology, Inc. Apparatus and method for epitaxially processing a substrate
WO2006108783A1 (en) * 2005-04-14 2006-10-19 Lpe S.P.A. Susceptor for epitaxial reactors and tool for the handling thereof
WO2009049020A2 (en) * 2007-10-11 2009-04-16 Valence Process Equipment, Inc. Chemical vapor deposition reactor
US20130125820A1 (en) * 2011-11-23 2013-05-23 Gerald Zheyao Yin Chemical vapor deposition or epitaxial-layer growth reactor and supporter thereof

Also Published As

Publication number Publication date
EP3414366B1 (en) 2023-03-29
EP3414366A1 (en) 2018-12-19
CN108779576A (zh) 2018-11-09
US20210189594A1 (en) 2021-06-24
JP2019507093A (ja) 2019-03-14
JP7082573B2 (ja) 2022-06-08
WO2017137872A1 (en) 2017-08-17

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