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ITMI20070056A1 - Substrato semiconduttore adatto alla realizzazione di dispositivi elettronici e-o optoelettronici e relativo processo di fabbricazione - Google Patents

Substrato semiconduttore adatto alla realizzazione di dispositivi elettronici e-o optoelettronici e relativo processo di fabbricazione

Info

Publication number
ITMI20070056A1
ITMI20070056A1 IT000056A ITMI20070056A ITMI20070056A1 IT MI20070056 A1 ITMI20070056 A1 IT MI20070056A1 IT 000056 A IT000056 A IT 000056A IT MI20070056 A ITMI20070056 A IT MI20070056A IT MI20070056 A1 ITMI20070056 A1 IT MI20070056A1
Authority
IT
Italy
Prior art keywords
optoelectronic
construction
electronic
semiconductor substrate
processing devices
Prior art date
Application number
IT000056A
Other languages
English (en)
Inventor
Arrigo Giuseppe Alessio Maria D
Via Francesco La
Original Assignee
Consiglio Nazionale Ricerche
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consiglio Nazionale Ricerche filed Critical Consiglio Nazionale Ricerche
Priority to IT000056A priority Critical patent/ITMI20070056A1/it
Priority to JP2009546071A priority patent/JP2010516602A/ja
Priority to PCT/IT2008/000025 priority patent/WO2008087686A2/en
Priority to EP08720195.0A priority patent/EP2122668B1/en
Publication of ITMI20070056A1 publication Critical patent/ITMI20070056A1/it
Priority to US12/504,167 priority patent/US20100013057A1/en
Priority to US13/299,935 priority patent/US8890103B2/en
Priority to US14/513,948 priority patent/US20150031193A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
IT000056A 2007-01-17 2007-01-17 Substrato semiconduttore adatto alla realizzazione di dispositivi elettronici e-o optoelettronici e relativo processo di fabbricazione ITMI20070056A1 (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT000056A ITMI20070056A1 (it) 2007-01-17 2007-01-17 Substrato semiconduttore adatto alla realizzazione di dispositivi elettronici e-o optoelettronici e relativo processo di fabbricazione
JP2009546071A JP2010516602A (ja) 2007-01-17 2008-01-17 電子および／または光電子デバイスおよび関連する製造プロセス実現化に適した半導体基板
PCT/IT2008/000025 WO2008087686A2 (en) 2007-01-17 2008-01-17 Semiconductor substrate suitable for the realisation of electronic and/ or optoelectronic devices and relative manufacturing process
EP08720195.0A EP2122668B1 (en) 2007-01-17 2008-01-17 Semiconductor substrate suitable for the realisation of electronic and/ or optoelectronic devices and related manufacturing process
US12/504,167 US20100013057A1 (en) 2007-01-17 2009-07-16 Semiconductor substrate suitable for the realisation of electronic and/or optoelectronic devices and relative manufacturing process
US13/299,935 US8890103B2 (en) 2007-01-17 2011-11-18 Semiconductor substrate suitable for the realisation of electronic and/or optoelectronic devices and relative manufacturing process
US14/513,948 US20150031193A1 (en) 2007-01-17 2014-10-14 Semiconductor substrate suitable for the realization of electronic and/or optoelectronic devices and relative manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000056A ITMI20070056A1 (it) 2007-01-17 2007-01-17 Substrato semiconduttore adatto alla realizzazione di dispositivi elettronici e-o optoelettronici e relativo processo di fabbricazione

Publications (1)

Publication Number Publication Date
ITMI20070056A1 true ITMI20070056A1 (it) 2008-07-18

Family

ID=39473781

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000056A ITMI20070056A1 (it) 2007-01-17 2007-01-17 Substrato semiconduttore adatto alla realizzazione di dispositivi elettronici e-o optoelettronici e relativo processo di fabbricazione

Country Status (5)

Country Link
US (1) US20100013057A1 (it)
EP (1) EP2122668B1 (it)
JP (1) JP2010516602A (it)
IT (1) ITMI20070056A1 (it)
WO (1) WO2008087686A2 (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9277792B2 (en) 2010-08-24 2016-03-08 Board Of Trustees Of Michigan State University Multicolored single crystal diamond gemstones and methods for forming the same
WO2012030897A1 (en) * 2010-09-02 2012-03-08 Board Of Trustees Michigan State University N-doped single crystal diamond substrates and methods therefor
JP5678721B2 (ja) * 2011-02-28 2015-03-04 新日鐵住金株式会社 炭化珪素単結晶育成用種結晶及び炭化珪素単結晶の製造方法
KR101249420B1 (ko) 2012-12-17 2013-04-03 주식회사 신경 와이어 조임장치
CN116988049B (zh) * 2023-09-22 2024-01-16 新美光(苏州)半导体科技有限公司 一种化学气相沉积设备及方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2111988A (en) 1936-03-03 1938-03-22 John H Percival Aeroplane
JPH0597582A (ja) * 1991-10-09 1993-04-20 Matsushita Electric Ind Co Ltd ダイヤモンド薄膜の堆積方法
US6864570B2 (en) * 1993-12-17 2005-03-08 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
JPH09309794A (ja) * 1996-05-24 1997-12-02 Sumitomo Electric Ind Ltd ダイヤモンド膜およびその合成方法
JP4473349B2 (ja) * 1997-06-30 2010-06-02 マクス−プランク−ゲゼルシャフト ツル フォルデルング デル ヴァイセンシャフト エー ファウ 層状構造体製造方法、及び半導体基板
US6161499A (en) * 1997-07-07 2000-12-19 Cvd Diamond Corporation Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma
JP2000022185A (ja) * 1998-07-03 2000-01-21 Sharp Corp 太陽電池セル及びその製造方法
JP3889889B2 (ja) * 1998-10-05 2007-03-07 財団法人ファインセラミックスセンター カーボンナノチューブ膜の製造方法
JP2000228364A (ja) * 1999-02-05 2000-08-15 Hitachi Ltd エピタキシャルウェハの製造方法および半導体装置の製造方法
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
WO2001086035A1 (en) * 2000-05-08 2001-11-15 Memc Electronic Materials, Inc. Epitaxial silicon wafer free from autodoping and backside halo
JP2003068655A (ja) 2001-08-27 2003-03-07 Hoya Corp 化合物単結晶の製造方法
US6824609B2 (en) * 2001-08-28 2004-11-30 Canon Kabushiki Kaisha Liquid phase growth method and liquid phase growth apparatus
EP1470592B1 (en) * 2002-01-28 2010-09-22 Showa Denko K.K. Boron phosphide based semiconductor device
FR2836159B1 (fr) * 2002-02-15 2004-05-07 Centre Nat Rech Scient Procede de formation de couche de carbure de silicium ou de nitrure d'element iii sur un substrat adapte
JP3760997B2 (ja) * 2003-05-21 2006-03-29 サンケン電気株式会社 半導体基体
US7718469B2 (en) 2004-03-05 2010-05-18 The University Of North Carolina At Charlotte Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
JP2006008432A (ja) * 2004-06-23 2006-01-12 Toshiba Ceramics Co Ltd 化合物半導体成長用基板及びその製造方法

Also Published As

Publication number Publication date
JP2010516602A (ja) 2010-05-20
EP2122668A2 (en) 2009-11-25
EP2122668B1 (en) 2018-07-04
WO2008087686A2 (en) 2008-07-24
US20100013057A1 (en) 2010-01-21
WO2008087686A3 (en) 2008-12-24

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