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IT1280041B1 - PROCEDURE FOR DRAWING A SILICON MONOCRYSTAL - Google Patents

PROCEDURE FOR DRAWING A SILICON MONOCRYSTAL

Info

Publication number
IT1280041B1
IT1280041B1 IT94RM000778A ITRM940778A IT1280041B1 IT 1280041 B1 IT1280041 B1 IT 1280041B1 IT 94RM000778 A IT94RM000778 A IT 94RM000778A IT RM940778 A ITRM940778 A IT RM940778A IT 1280041 B1 IT1280041 B1 IT 1280041B1
Authority
IT
Italy
Prior art keywords
procedure
silicon monocrystal
monocrystal
silicon
Prior art date
Application number
IT94RM000778A
Other languages
Italian (it)
Inventor
Ammon Wilfried Von
Erich Dornberger
Hans Oelkrug
Peter Gerlach
Franz Segieth
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25932158&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT1280041(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from DE4414947A external-priority patent/DE4414947C2/en
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of ITRM940778A0 publication Critical patent/ITRM940778A0/en
Publication of ITRM940778A1 publication Critical patent/ITRM940778A1/en
Application granted granted Critical
Publication of IT1280041B1 publication Critical patent/IT1280041B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT94RM000778A 1993-12-16 1994-11-28 PROCEDURE FOR DRAWING A SILICON MONOCRYSTAL IT1280041B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4343051 1993-12-16
DE4414947A DE4414947C2 (en) 1993-12-16 1994-04-28 Method of pulling a single crystal from silicon

Publications (3)

Publication Number Publication Date
ITRM940778A0 ITRM940778A0 (en) 1994-11-28
ITRM940778A1 ITRM940778A1 (en) 1996-05-28
IT1280041B1 true IT1280041B1 (en) 1997-12-29

Family

ID=25932158

Family Applications (1)

Application Number Title Priority Date Filing Date
IT94RM000778A IT1280041B1 (en) 1993-12-16 1994-11-28 PROCEDURE FOR DRAWING A SILICON MONOCRYSTAL

Country Status (3)

Country Link
US (1) US5487354A (en)
JP (1) JP2700773B2 (en)
IT (1) IT1280041B1 (en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19529485A1 (en) * 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Method and device for determining the diameter of a growing single crystal
JP4020987B2 (en) * 1996-01-19 2007-12-12 信越半導体株式会社 Silicon single crystal having no crystal defects around the wafer and its manufacturing method
DE19711922A1 (en) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Device and method for pulling a single crystal
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
KR20010006202A (en) 1997-04-09 2001-01-26 헨넬리 헬렌 에프 Low defect density, ideal oxygen precipitating silicon
CN101070621B (en) * 1997-04-09 2012-09-05 Memc电子材料有限公司 Low defect density, self-interstitial dominated silicon
JPH1179889A (en) 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd Production of and production unit for silicon single crystal with few crystal defect, and silicon single crystal and silicon wafer produced thereby
JP3460551B2 (en) * 1997-11-11 2003-10-27 信越半導体株式会社 Silicon single crystal wafer with few crystal defects and method of manufacturing the same
JP3747123B2 (en) * 1997-11-21 2006-02-22 信越半導体株式会社 Method for producing silicon single crystal with few crystal defects and silicon single crystal wafer
JP3955375B2 (en) 1998-01-19 2007-08-08 信越半導体株式会社 Silicon single crystal manufacturing method and silicon single crystal wafer
JP3943717B2 (en) 1998-06-11 2007-07-11 信越半導体株式会社 Silicon single crystal wafer and manufacturing method thereof
KR20010041957A (en) 1998-06-26 2001-05-25 헨넬리 헬렌 에프 Process for growth of defect free silicon crystals of arbitrarily large diameters
US6236104B1 (en) 1998-09-02 2001-05-22 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
JP3904832B2 (en) 1998-10-14 2007-04-11 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Epitaxial silicon wafer substantially free of defects for introducing crystal growth
WO2000022198A1 (en) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
JP2000154070A (en) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd Ceramic three-dimensional structure and method of manufacturing the same
JP2003510235A (en) * 1999-09-23 2003-03-18 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Czochralski method for growing single-crystal silicon by controlling the cooling rate
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
US6391662B1 (en) 1999-09-23 2002-05-21 Memc Electronic Materials, Inc. Process for detecting agglomerated intrinsic point defects by metal decoration
JP3901092B2 (en) 2000-06-30 2007-04-04 信越半導体株式会社 Method for producing silicon single crystal
KR100374703B1 (en) * 2000-09-04 2003-03-04 주식회사 실트론 A Single Crystal Silicon Wafer, Ingot and Methods thereof
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
EP2295619B1 (en) * 2001-01-26 2014-04-23 MEMC Electronic Materials, Inc. Process for producing Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults
DE102004021113B4 (en) * 2004-04-29 2006-04-20 Siltronic Ag SOI disk and process for its production
DE102005028202B4 (en) * 2005-06-17 2010-04-15 Siltronic Ag Process for the production of semiconductor wafers from silicon
JP4929817B2 (en) 2006-04-25 2012-05-09 信越半導体株式会社 Method for measuring distance between reference reflector and melt surface, method for controlling melt surface position using the same, and apparatus for producing silicon single crystal
KR101385810B1 (en) * 2006-05-19 2014-04-16 엠이엠씨 일렉트로닉 머티리얼즈, 인크. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
JP5167651B2 (en) * 2007-02-08 2013-03-21 信越半導体株式会社 Method for measuring distance between heat shield member lower end surface and raw material melt surface, and method for controlling the distance
JP5577873B2 (en) 2010-06-16 2014-08-27 信越半導体株式会社 Method for measuring distance between bottom surface of heat shield member and raw material melt surface, control method for distance between bottom surface of heat shield member and raw material melt surface, method for producing silicon single crystal
JP5724400B2 (en) 2011-01-19 2015-05-27 信越半導体株式会社 Single crystal manufacturing apparatus and single crystal manufacturing method
JP5682471B2 (en) 2011-06-20 2015-03-11 信越半導体株式会社 Silicon wafer manufacturing method
DE112021005056B4 (en) 2020-12-01 2025-07-24 Shin-Etsu Handotai Co., Ltd. Method for measuring a distance between a lower end face of a heat shielding element and a surface of a melted raw material, method for controlling a distance between a lower end face of a heat shielding element and a surface of a melted raw material, and method for producing a silicon single crystal

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2821481C2 (en) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Device for pulling high-purity semiconductor rods from the melt
DE3027262A1 (en) * 1980-07-18 1982-02-11 Skf Kugellagerfabriken Gmbh, 8720 Schweinfurt DRAWING PROCESSED, THIN-WALLED BEARING BUSHING
JPS6131382A (en) * 1984-07-20 1986-02-13 Sumitomo Electric Ind Ltd Pulling method of compound semiconductor single crystal
US4981549A (en) * 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
US5078830A (en) * 1989-04-10 1992-01-07 Mitsubishi Metal Corporation Method for growing single crystal
JP2613498B2 (en) * 1991-03-15 1997-05-28 信越半導体株式会社 Heat treatment method for Si single crystal wafer
JP3016897B2 (en) * 1991-03-20 2000-03-06 信越半導体株式会社 Method and apparatus for producing silicon single crystal

Also Published As

Publication number Publication date
ITRM940778A1 (en) 1996-05-28
JP2700773B2 (en) 1998-01-21
US5487354A (en) 1996-01-30
ITRM940778A0 (en) 1994-11-28
JPH07257991A (en) 1995-10-09

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971125