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IN2014CN04501A - - Google Patents

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Publication number
IN2014CN04501A
IN2014CN04501A IN4501CHN2014A IN2014CN04501A IN 2014CN04501 A IN2014CN04501 A IN 2014CN04501A IN 4501CHN2014 A IN4501CHN2014 A IN 4501CHN2014A IN 2014CN04501 A IN2014CN04501 A IN 2014CN04501A
Authority
IN
India
Prior art keywords
state
oxide
electrons
lost
outermost shell
Prior art date
Application number
Inventor
Yukiko Abe
Naoyuki Ueda
Yuki Nakamura
Mikiko Takada
Shinji Matsumoto
Yuji Sone
Ryoichi Saotome
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of IN2014CN04501A publication Critical patent/IN2014CN04501A/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Semiconductor Memories (AREA)

Abstract

To provide is a p type oxide including an oxide wherein the oxide includes: Cu; and an element M which is selected from p block elements and which can be in an equilibrium state as being present as an ion wherein the equilibrium state is a state in which there are both a state where all of electrons of p orbital of an outermost shell are lost and a state where all of electrons of an outermost shell are lost and wherein the p type oxide is amorphous.
IN4501CHN2014 2011-11-30 2012-11-28 IN2014CN04501A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011261845 2011-11-30
JP2012058668A JP5783094B2 (en) 2011-11-30 2012-03-15 P-type oxide, composition for producing p-type oxide, method for producing p-type oxide, semiconductor element, display element, image display apparatus, and system
PCT/JP2012/081429 WO2013081169A1 (en) 2011-11-30 2012-11-28 P-type oxide, composition for producing p-type oxide, method for producing p-type oxide, semiconductor element, display element, image display device, and system

Publications (1)

Publication Number Publication Date
IN2014CN04501A true IN2014CN04501A (en) 2015-09-11

Family

ID=48535615

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4501CHN2014 IN2014CN04501A (en) 2011-11-30 2012-11-28

Country Status (8)

Country Link
US (1) US9536957B2 (en)
EP (1) EP2786415A4 (en)
JP (1) JP5783094B2 (en)
KR (1) KR101670148B1 (en)
CN (1) CN104094407B (en)
IN (1) IN2014CN04501A (en)
TW (1) TWI496294B (en)
WO (1) WO2013081169A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160043142A1 (en) * 2013-03-21 2016-02-11 Industry-University Cooperation Foundation Hanyang University Two-terminal switching element having bidirectional switching characteristic, resistive memory cross-point array including same, and method for manufacturing two-terminal switching element and cross-point resistive memory array
JP6264090B2 (en) * 2013-07-31 2018-01-24 株式会社リコー FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR
JP6547273B2 (en) * 2013-12-26 2019-07-24 株式会社リコー p-type oxide semiconductor, composition for producing p-type oxide semiconductor, method for producing p-type oxide semiconductor, semiconductor element, display element, image display device, and system
US9985139B2 (en) * 2014-11-12 2018-05-29 Qualcomm Incorporated Hydrogenated p-channel metal oxide semiconductor thin film transistors
US9685542B2 (en) * 2014-12-30 2017-06-20 Qualcomm Incorporated Atomic layer deposition of P-type oxide semiconductor thin films
US9647135B2 (en) 2015-01-22 2017-05-09 Snaptrack, Inc. Tin based p-type oxide semiconductor and thin film transistor applications
US10115828B2 (en) * 2015-07-30 2018-10-30 Ricoh Company, Ltd. Field-effect transistor, display element, image display device, and system
US10170635B2 (en) 2015-12-09 2019-01-01 Ricoh Company, Ltd. Semiconductor device, display device, display apparatus, and system
JP6907512B2 (en) * 2015-12-15 2021-07-21 株式会社リコー Manufacturing method of field effect transistor
US9508664B1 (en) 2015-12-16 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure comprising a plurality of metal oxide fibers and method for forming the same
JP6665536B2 (en) 2016-01-12 2020-03-13 株式会社リコー Oxide semiconductor
JP6701835B2 (en) 2016-03-11 2020-05-27 株式会社リコー Field effect transistor, display element, image display device, and system
US10403627B2 (en) * 2016-10-11 2019-09-03 Imec Vzw Memory device for a dynamic random access memory
KR102434909B1 (en) * 2017-08-04 2022-08-19 엘지디스플레이 주식회사 Thin film transistor and method for manufacturing the same, and display device including the same
WO2019181686A1 (en) 2018-03-19 2019-09-26 Ricoh Company, Ltd. Inorganic el element, display element, image display device, and system
US11322627B2 (en) 2018-09-19 2022-05-03 Kabushiki Kaisha Toshiba Solar cell, multi-junction solar cell, solar cell module, and solar power generation system
US12224367B2 (en) 2018-09-19 2025-02-11 Kabushiki Kaisha Toshiba Solar cell, multi-junction solar cell, solar cell module, and solar power generation system
KR102172210B1 (en) * 2019-01-04 2020-10-30 한국전력공사 Perovskite solar cell having buffer integrated transparent electrode and fabricating method thereof

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JP3850978B2 (en) 1998-03-31 2006-11-29 独立行政法人科学技術振興機構 Conductive transparent oxide
JP2000150861A (en) 1998-11-16 2000-05-30 Tdk Corp Oxide thin film
JP2000228516A (en) 1999-02-08 2000-08-15 Tdk Corp Semiconductor laminated thin films, electronic devices and diodes
US7102155B2 (en) * 2003-09-04 2006-09-05 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
US7026713B2 (en) 2003-12-17 2006-04-11 Hewlett-Packard Development Company, L.P. Transistor device having a delafossite material
JP2006124754A (en) * 2004-10-27 2006-05-18 Bridgestone Corp Cu2O FILM, METHOD FOR FORMING IT, AND SOLAR BATTERY
JP5053537B2 (en) 2004-11-10 2012-10-17 キヤノン株式会社 Semiconductor device using amorphous oxide
US20070054042A1 (en) 2005-09-06 2007-03-08 Sharp Laboratories Of America, Inc. Method of SrCu2O2 spin-on precursor synthesis and low temperature p-type thin film deposition
JP5168605B2 (en) * 2008-07-24 2013-03-21 独立行政法人科学技術振興機構 P-channel thin film transistor and manufacturing method thereof
JP2010287811A (en) 2009-06-15 2010-12-24 Nec Corp Semiconductor device and apparatus for manufacturing the same
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Also Published As

Publication number Publication date
WO2013081169A1 (en) 2013-06-06
TW201330278A (en) 2013-07-16
US9536957B2 (en) 2017-01-03
KR20140095106A (en) 2014-07-31
CN104094407B (en) 2017-08-11
JP2013138165A (en) 2013-07-11
CN104094407A (en) 2014-10-08
EP2786415A4 (en) 2015-07-08
KR101670148B1 (en) 2016-10-27
US20140353648A1 (en) 2014-12-04
EP2786415A1 (en) 2014-10-08
JP5783094B2 (en) 2015-09-24
TWI496294B (en) 2015-08-11

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