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IN2014CN03385A - - Google Patents

Info

Publication number
IN2014CN03385A
IN2014CN03385A IN3385CHN2014A IN2014CN03385A IN 2014CN03385 A IN2014CN03385 A IN 2014CN03385A IN 3385CHN2014 A IN3385CHN2014 A IN 3385CHN2014A IN 2014CN03385 A IN2014CN03385 A IN 2014CN03385A
Authority
IN
India
Prior art keywords
forming
methods
fabrication
enable
electrochemical capacitor
Prior art date
Application number
Inventor
Donald S Gardner
Cary L Pint
Charles W Holzwarth
Wei Jin
Zhaohui Chen
Yang Liu
Eric C Hannah
John L Gustafson
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of IN2014CN03385A publication Critical patent/IN2014CN03385A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques.
IN3385CHN2014 2011-12-27 2011-12-27 IN2014CN03385A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2011/067434 WO2013100916A1 (en) 2011-12-27 2011-12-27 Fabrication of porous silicon electrochemical capacitors

Publications (1)

Publication Number Publication Date
IN2014CN03385A true IN2014CN03385A (en) 2015-07-03

Family

ID=48698160

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3385CHN2014 IN2014CN03385A (en) 2011-12-27 2011-12-27

Country Status (5)

Country Link
US (1) US10170244B2 (en)
DE (1) DE112011106043T5 (en)
IN (1) IN2014CN03385A (en)
TW (1) TWI587330B (en)
WO (1) WO2013100916A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9741881B2 (en) * 2003-04-14 2017-08-22 S'tile Photovoltaic module including integrated photovoltaic cells
US9409767B2 (en) 2011-11-03 2016-08-09 Intel Corporation Energy storage structure, method of manufacturing a support structure for same, and microelectronic assembly and system containing same
US10170244B2 (en) 2011-12-27 2019-01-01 Intel Corporation Fabrication of porous silicon electrochemical capacitors
US9025313B2 (en) 2012-08-13 2015-05-05 Intel Corporation Energy storage devices with at least one porous polycrystalline substrate
CN105283926B (en) 2013-03-15 2019-05-10 克林伏特能源有限公司 Utilizing organic and organometallic high dielectric constant materials to improve electrodes and currents in energy storage devices and methods for improving the same
US10535466B1 (en) * 2014-11-05 2020-01-14 United States Of America As Represented By The Secretary Of The Navy Super dielectric capacitor having electrically and ionically conducting electrodes
US10128057B2 (en) 2015-10-28 2018-11-13 Stmicroelectronics S.R.L. Supercapacitor with movable separator and method of operating a supercapacitor
CN105719843B (en) * 2016-01-21 2018-05-04 东南大学 A kind of molybdenum nitride/titanium nitride nano pipe array composite material and its preparation method and application
CN105655148B (en) * 2016-01-21 2018-02-02 东南大学 A kind of nitridation lithium titanate nano wire/nanometer film integrated material of nano-porous structure and its preparation method and application
CN105655139B (en) * 2016-01-21 2018-05-25 东南大学 A kind of molybdenum oxide/carbon coating titanium nitride nano pipe array composite material and its preparation method and application
DE102016202979A1 (en) * 2016-02-25 2017-08-31 Robert Bosch Gmbh Hybrid supercapacitor
WO2018152211A1 (en) * 2017-02-14 2018-08-23 Rolls-Royce Corporation Material property capacitance sensor
NO343382B1 (en) 2017-03-07 2019-02-18 Univ College Of Southeast Norway On-chip supercapacitor With Silicon nanostructure
US12033796B2 (en) 2017-03-07 2024-07-09 University Of South-Eastern Norway Deposited carbon film on etched silicon for on-chip supercapacitor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455430A (en) * 1991-08-01 1995-10-03 Sanyo Electric Co., Ltd. Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate
US5508542A (en) * 1994-10-28 1996-04-16 International Business Machines Corporation Porous silicon trench and capacitor structures
DE10242877A1 (en) * 2002-09-16 2004-03-25 Infineon Technologies Ag Semiconductor substrate used in the production of a DRAM memory cell has a dielectric layer formed on the surface of recesses and carrier substrate, and an electrically conducting layer formed in the recesses to produce capacitor electrodes
IL153289A (en) * 2002-12-05 2010-06-16 Acktar Ltd Electrodes for electrolytic capacitors and method for producing them
US7033703B2 (en) 2002-12-20 2006-04-25 Firefly Energy, Inc. Composite material and current collector for battery
EP1672652B1 (en) 2003-10-10 2011-11-23 Japan Gore-Tex, Inc. Electrode for electric double layer capacitor, method for producing same, electric double layer capacitor, and conductive adhesive
JP2009503840A (en) 2005-07-27 2009-01-29 セラジー リミテッド Multilayer electrochemical energy storage device and manufacturing method thereof
JP4411331B2 (en) * 2007-03-19 2010-02-10 信越化学工業株式会社 Silicon substrate for magnetic recording medium and manufacturing method thereof
US8526167B2 (en) * 2009-09-03 2013-09-03 Applied Materials, Inc. Porous amorphous silicon-carbon nanotube composite based electrodes for battery applications
EP2553696A4 (en) 2010-04-02 2016-07-06 Intel Corp CHARGE STORAGE DEVICE, METHOD FOR MANUFACTURING THE SAME, METHOD FOR MANUFACTURING ELECTRICALLY CONDUCTIVE STRUCTURE THEREOF, MOBILE ELECTRONIC DEVICE USING THE SAME, AND MICROELECTRONIC DEVICE CONTAINING THE SAME
FR2963476B1 (en) * 2010-07-30 2012-08-24 Centre Nat Rech Scient METHOD FOR PRODUCING A CAPACITOR COMPRISING A NANO-CAPACITY NETWORK
US9409767B2 (en) * 2011-11-03 2016-08-09 Intel Corporation Energy storage structure, method of manufacturing a support structure for same, and microelectronic assembly and system containing same
US10170244B2 (en) 2011-12-27 2019-01-01 Intel Corporation Fabrication of porous silicon electrochemical capacitors

Also Published As

Publication number Publication date
TWI587330B (en) 2017-06-11
WO2013100916A1 (en) 2013-07-04
US10170244B2 (en) 2019-01-01
TW201342406A (en) 2013-10-16
DE112011106043T5 (en) 2014-09-18
US20140233152A1 (en) 2014-08-21

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