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IN2012DN03820A - - Google Patents

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Publication number
IN2012DN03820A
IN2012DN03820A IN3820DEN2012A IN2012DN03820A IN 2012DN03820 A IN2012DN03820 A IN 2012DN03820A IN 3820DEN2012 A IN3820DEN2012 A IN 3820DEN2012A IN 2012DN03820 A IN2012DN03820 A IN 2012DN03820A
Authority
IN
India
Prior art keywords
powder
sputtering target
naf
contained
molded article
Prior art date
Application number
Inventor
Shoubin Zhang
Yoshinori Shirai
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=43969780&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IN2012DN03820(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2012DN03820A publication Critical patent/IN2012DN03820A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Powder Metallurgy (AREA)

Abstract

The sputtering target is provided wherein 20 to 40 at% of Ga and 0.05 to 1 at% of Na are contained as metal components except fluorine (F) of the sputtering target, a remaining portion has a component composition consisting of Cu and unavoidable impurities, and Na is contained in the state of a NaF compound. Also, a method for producing the sputtering target includes the steps of forming a molded article consisting of a mixed powder of NaF powder and Cu-Ga powder or a mixed powder of NaF powder, Cu-Ga powder, and Cu powder; and sintering the molded article in a vacuum atmosphere, an inert gas atmosphere, or a reducing atmosphere.
IN3820DEN2012 2009-11-06 2010-11-04 IN2012DN03820A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009255540 2009-11-06
JP2010241749A JP4793504B2 (en) 2009-11-06 2010-10-28 Sputtering target and manufacturing method thereof
PCT/JP2010/006481 WO2011055537A1 (en) 2009-11-06 2010-11-04 Sputtering target and process for production thereof

Publications (1)

Publication Number Publication Date
IN2012DN03820A true IN2012DN03820A (en) 2015-08-28

Family

ID=43969780

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3820DEN2012 IN2012DN03820A (en) 2009-11-06 2010-11-04

Country Status (8)

Country Link
US (1) US8795489B2 (en)
EP (1) EP2402482B1 (en)
JP (1) JP4793504B2 (en)
KR (1) KR101099416B1 (en)
CN (1) CN102395702B (en)
IN (1) IN2012DN03820A (en)
TW (1) TW201126002A (en)
WO (1) WO2011055537A1 (en)

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WO2011083647A1 (en) * 2010-01-07 2011-07-14 Jx日鉱日石金属株式会社 Cu-Ga SPUTTERING TARGET, METHOD FOR MANUFACTURING THE TARGET, LIGHT ABSORBING LAYER, AND SOLAR CELL USING THE LIGHT ABSORBING LAYER
JP4831258B2 (en) * 2010-03-18 2011-12-07 三菱マテリアル株式会社 Sputtering target and manufacturing method thereof
JP5418463B2 (en) * 2010-10-14 2014-02-19 住友金属鉱山株式会社 Method for producing Cu-Ga alloy sputtering target
JP5153911B2 (en) * 2011-04-22 2013-02-27 三菱マテリアル株式会社 Sputtering target and manufacturing method thereof
JP5725610B2 (en) 2011-04-29 2015-05-27 三菱マテリアル株式会社 Sputtering target and manufacturing method thereof
WO2012165092A1 (en) * 2011-06-03 2012-12-06 日東電工株式会社 Method for manufacturing solar cell
JP5795898B2 (en) * 2011-07-28 2015-10-14 株式会社アルバック CuGaNa sputtering target
JP5795897B2 (en) * 2011-07-28 2015-10-14 株式会社アルバック CuGaNa sputtering target
JP5165100B1 (en) * 2011-11-01 2013-03-21 三菱マテリアル株式会社 Sputtering target and manufacturing method thereof
JP5919738B2 (en) * 2011-11-10 2016-05-18 三菱マテリアル株式会社 Sputtering target and manufacturing method thereof
JP5999357B2 (en) * 2012-02-24 2016-09-28 三菱マテリアル株式会社 Sputtering target and manufacturing method thereof
US8586457B1 (en) * 2012-05-17 2013-11-19 Intermolecular, Inc. Method of fabricating high efficiency CIGS solar cells
CN102751388B (en) * 2012-07-18 2015-03-11 林刘毓 A kind of preparation method of copper indium gallium selenide thin film solar cell
JP5907428B2 (en) * 2012-07-23 2016-04-26 三菱マテリアル株式会社 Sputtering target and manufacturing method thereof
JP2014037556A (en) * 2012-08-10 2014-02-27 Mitsubishi Materials Corp Sputtering target and method for manufacturing the same
JP6311912B2 (en) * 2012-10-17 2018-04-18 三菱マテリアル株式会社 Cu-Ga binary sputtering target and method for producing the same
AT13564U1 (en) 2013-01-31 2014-03-15 Plansee Se CU-GA-IN-NA Target
JP6365922B2 (en) 2013-04-15 2018-08-01 三菱マテリアル株式会社 Sputtering target and manufacturing method thereof
CN103255367B (en) * 2013-04-28 2015-07-29 柳州百韧特先进材料有限公司 The preparation method of solar cell CIGS absorption layer target material
JP6120076B2 (en) * 2013-08-01 2017-04-26 三菱マテリアル株式会社 Cu-Ga alloy sputtering target and method for producing the same
JP5733357B2 (en) * 2013-08-02 2015-06-10 住友金属鉱山株式会社 Cu-Ga alloy sputtering target
WO2015042622A1 (en) * 2013-09-27 2015-04-02 Plansee Se Copper-gallium sputtering target
JP2015086434A (en) * 2013-10-30 2015-05-07 住友金属鉱山株式会社 Method for producing Cu-Ga alloy sputtering target
JP6665428B2 (en) * 2014-07-08 2020-03-13 三菱マテリアル株式会社 Cu-Ga alloy sputtering target and manufacturing method thereof
JP5973041B2 (en) 2014-08-28 2016-08-17 三菱マテリアル株式会社 Cu-Ga sputtering target and method for producing Cu-Ga sputtering target
WO2016047556A1 (en) * 2014-09-22 2016-03-31 三菱マテリアル株式会社 Sputtering target and method for manufacturing same
JP6634750B2 (en) * 2014-09-22 2020-01-22 三菱マテリアル株式会社 Sputtering target and method for manufacturing the same
US9947531B2 (en) 2015-01-12 2018-04-17 NuvoSun, Inc. High rate sputter deposition of alkali metal-containing precursor films useful to fabricate chalcogenide semiconductors
TWI551704B (en) * 2015-05-21 2016-10-01 China Steel Corp Copper gallium alloy composite sodium element target manufacturing method
JP6794850B2 (en) * 2016-02-08 2020-12-02 三菱マテリアル株式会社 Sputtering target and manufacturing method of sputtering target
WO2017147037A1 (en) 2016-02-26 2017-08-31 Dow Global Technologies Llc Method for improving stability of photovoltaic articles incorporating chalcogenide semiconductors
JP2018024933A (en) * 2016-07-29 2018-02-15 三菱マテリアル株式会社 Cu-Ga SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME
WO2018021105A1 (en) 2016-07-29 2018-02-01 三菱マテリアル株式会社 Cu-Ga SPUTTERING TARGET AND METHOD FOR PRODUCING Cu-Ga SPUTTERING TARGET
KR102026458B1 (en) * 2017-05-12 2019-09-27 서울대학교산학협력단 Method for producing metal sintered body
JP2019112671A (en) * 2017-12-22 2019-07-11 三菱マテリアル株式会社 Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME

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Also Published As

Publication number Publication date
EP2402482A1 (en) 2012-01-04
TWI360583B (en) 2012-03-21
US20120217157A1 (en) 2012-08-30
EP2402482B1 (en) 2014-07-02
WO2011055537A1 (en) 2011-05-12
KR101099416B1 (en) 2011-12-27
JP2011117077A (en) 2011-06-16
EP2402482A4 (en) 2012-03-28
TW201126002A (en) 2011-08-01
KR20110113213A (en) 2011-10-14
CN102395702B (en) 2013-04-10
JP4793504B2 (en) 2011-10-12
US8795489B2 (en) 2014-08-05
CN102395702A (en) 2012-03-28

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