[go: up one dir, main page]

IN2012DN02318A - - Google Patents

Download PDF

Info

Publication number
IN2012DN02318A
IN2012DN02318A IN2318DEN2012A IN2012DN02318A IN 2012DN02318 A IN2012DN02318 A IN 2012DN02318A IN 2318DEN2012 A IN2318DEN2012 A IN 2318DEN2012A IN 2012DN02318 A IN2012DN02318 A IN 2012DN02318A
Authority
IN
India
Prior art keywords
averaged
coating
gas phase
range
percentual
Prior art date
Application number
Other languages
English (en)
Inventor
Frank Hergert
Jan Rudolf Thyen
Volker Probst
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of IN2012DN02318A publication Critical patent/IN2012DN02318A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/331Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/337Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/138Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495Thickness [relative or absolute]
    • Y10T428/24967Absolute thicknesses specified
    • Y10T428/24975No layer or component greater than 5 mils thick

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Optical Filters (AREA)
IN2318DEN2012 2009-09-23 2010-09-23 IN2012DN02318A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09012122A EP2302688A1 (fr) 2009-09-23 2009-09-23 Procédé de fabrication d'un substrat doté d'une couche de filtre d'interférence colorée, ce substrat comprenant une couche de filtre d'interférence colorée, l'utilisation de ce substrat comme cellule solaire colorée ou comme module solaire coloré ou comme composant de celui-ci et un faisceau comprenant au moins deux de ces substrats
PCT/EP2010/064052 WO2011036209A1 (fr) 2009-09-23 2010-09-23 Procédé de production d'un substrat doté d'une couche filtre d'interférences en couleur, substrat contenant une couche filtre d'interférences en couleur, utilisation de ce substrat comme cellule solaire en couleur, module solaire en couleur ou partie intégrante de ces derniers, et réseau comportant au moins deux de ces substrats

Publications (1)

Publication Number Publication Date
IN2012DN02318A true IN2012DN02318A (fr) 2015-08-21

Family

ID=41571808

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2318DEN2012 IN2012DN02318A (fr) 2009-09-23 2010-09-23

Country Status (6)

Country Link
US (1) US9312413B2 (fr)
EP (1) EP2302688A1 (fr)
KR (1) KR101706411B1 (fr)
CN (1) CN102498574B (fr)
IN (1) IN2012DN02318A (fr)
WO (1) WO2011036209A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2302688A1 (fr) 2009-09-23 2011-03-30 Robert Bosch GmbH Procédé de fabrication d'un substrat doté d'une couche de filtre d'interférence colorée, ce substrat comprenant une couche de filtre d'interférence colorée, l'utilisation de ce substrat comme cellule solaire colorée ou comme module solaire coloré ou comme composant de celui-ci et un faisceau comprenant au moins deux de ces substrats
US20140159638A1 (en) * 2012-08-19 2014-06-12 EnergyBionics, LLC Portable energy harvesting, storing, and charging device
EP3651211A4 (fr) 2017-08-10 2020-05-27 Kaneka Corporation Module de cellules solaires
KR102267497B1 (ko) * 2018-02-13 2021-06-21 국민대학교산학협력단 효율 저하가 최소화된 칼라 박막 태양전지
ES2837041T3 (es) 2018-02-23 2021-06-29 Cnbm Bengbu Design & Res Institute For Glass Industry Co Ltd Módulo solar con efecto de color homogéneo
CN108706889A (zh) * 2018-05-08 2018-10-26 北京汉能光伏投资有限公司 一种镀膜板及其制备方法和一种太阳能组件
WO2021118982A1 (fr) * 2019-12-10 2021-06-17 Trustees Of Boston University Appareil et procédé d'analyse biomoléculaire

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142576A (ja) 1983-12-28 1985-07-27 Seiko Epson Corp 薄膜太陽電池基板
JPS60148174A (ja) 1984-01-12 1985-08-05 Seikosha Co Ltd 色つき太陽電池
JP2504610B2 (ja) 1990-07-26 1996-06-05 株式会社東芝 電力用半導体装置
JP2985376B2 (ja) 1991-06-27 1999-11-29 日本電気株式会社 自動周波数制御回路
DE69702277T2 (de) 1996-03-06 2001-03-01 Canon K.K., Tokio/Tokyo Verfahren zur Herstellung einer Dünnzinkoxidfilm und Verfahren zur Herstellung eines Substrats einer Halbleiteranordnung und Verfahren zur Herstellung einer photoelektrischen Umwandlungsvorrichtung unter Verwendung dieser Film
US5849108A (en) * 1996-04-26 1998-12-15 Canon Kabushiki Kaisha Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction
JPH09307132A (ja) 1996-05-20 1997-11-28 Citizen Watch Co Ltd 太陽電池装置およびその製造方法
US6238808B1 (en) * 1998-01-23 2001-05-29 Canon Kabushiki Kaisha Substrate with zinc oxide layer, method for producing zinc oxide layer, photovoltaic device, and method for producing photovoltaic device
JP4106735B2 (ja) 1998-04-13 2008-06-25 凸版印刷株式会社 太陽電池付反射型ディスプレイ
JP2000208793A (ja) 1999-01-18 2000-07-28 Fuji Electric Co Ltd 太陽電池モジュ―ルおよびその製造方法
US6459035B2 (en) 1999-12-27 2002-10-01 Asulab S.A. Photovoltaic cell having a colored appearance, particularly for a watch dial
JP2002148362A (ja) 2001-09-17 2002-05-22 Seiko Epson Corp 太陽電池付時計
WO2004017452A1 (fr) * 2002-08-13 2004-02-26 Bridgestone Corporation Perfectionnement apporté à une cellule solaire à colorant
DE102004005050A1 (de) 2004-01-30 2005-08-25 Detlef Schulz Verfahren zur Energieumwandlung solarer Strahlung in elektrischen Strom und Wärme mit farbselektiven Interferenzfilterspiegeln und eine Vorrichtung eines Konzentrator-Solarkollektors mit farbselektiven Spiegeln zur Anwendung des Verfahrens
US20060029815A1 (en) 2004-07-21 2006-02-09 Woodruff Daniel P Substrate coating
US20090078316A1 (en) 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell
US8058549B2 (en) * 2007-10-19 2011-11-15 Qualcomm Mems Technologies, Inc. Photovoltaic devices with integrated color interferometric film stacks
BRPI0821371A2 (pt) 2007-12-21 2015-06-16 Qualcomm Mems Technologies Inc Dispositivos fotovoltaicos e respectivo método de fabrico
EP2360742A2 (fr) * 2009-06-10 2011-08-24 Suinno Solar Oy Procédé et supports pour cellule solaire haute puissance
EP2302688A1 (fr) 2009-09-23 2011-03-30 Robert Bosch GmbH Procédé de fabrication d'un substrat doté d'une couche de filtre d'interférence colorée, ce substrat comprenant une couche de filtre d'interférence colorée, l'utilisation de ce substrat comme cellule solaire colorée ou comme module solaire coloré ou comme composant de celui-ci et un faisceau comprenant au moins deux de ces substrats
WO2011065084A1 (fr) * 2009-11-25 2011-06-03 シャープ株式会社 Module de cellules solaires et dispositif de génération d'énergie solaire

Also Published As

Publication number Publication date
KR20120072377A (ko) 2012-07-03
EP2302688A1 (fr) 2011-03-30
US20120298194A1 (en) 2012-11-29
KR101706411B1 (ko) 2017-02-13
CN102498574A (zh) 2012-06-13
US9312413B2 (en) 2016-04-12
WO2011036209A1 (fr) 2011-03-31
CN102498574B (zh) 2017-05-24

Similar Documents

Publication Publication Date Title
IN2012DN02318A (fr)
WO2010065966A3 (fr) Dépôt haute vitesse de couches minces avec propriétés améliorées de couche barrière
WO2009122361A3 (fr) Préparation de précurseurs contenant des lanthanides et dépôt de films contenant des lanthanides
WO2013046155A8 (fr) Précurseurs de type diazabutadiène de tungstène, leur synthèse et leur utilisation en vue du dépôt de films contenant du tungstène
MX2012001920A (es) Sintesis de rocio termico directo de componentes de bateria de ion li.
WO2011106072A3 (fr) Utilisation de tétroxyde de ruthénium en tant que précurseur et réactif pour dépôts de film mince
WO2012012026A3 (fr) Dépôt de film métallique
WO2012138480A3 (fr) Procédés pour la production de films complexes, et films produits par ceux-ci
WO2011153095A3 (fr) Structures de grille métallique et leurs procédés de formation
WO2012142439A8 (fr) Procédé et appareil permettant un dépôt de couches atomiques réalisé avec assistance ionique
WO2010062582A3 (fr) Procédé de dépôt en phase vapeur de composés ternaires
WO2012067439A3 (fr) Composé métallique à base de diazadiène, son procédé de préparation et procédé de formation d'une couche mince l'utilisant
WO2010055423A3 (fr) Précurseurs de tellure pour dépôt de couche
MX2013010002A (es) Preparacion farmaceutica solida recubierta.
WO2012030566A3 (fr) Bain de dépôt autocatalytique d'alliage de cuivre et son procédé de dépôt
MX362153B (es) Sustrato con un revestimiento resistente a la corrosión y procedimiento para su producción.
WO2011138331A3 (fr) Procédé de pvd hybride pour déposer des couches de cristal mixte
WO2012138671A3 (fr) Matière céramique hautement poreuse et son procédé d'utilisation et de façonnage
WO2013009913A3 (fr) Films barrières d'oxyde métallique mixte et procédé de dépôt de couche atomique pour réaliser des films barrières d'oxyde métallique mixte
WO2011092017A8 (fr) Procédé de fabrication d'un objet revêtu par gravure de texture
WO2012001134A3 (fr) Procédé de dépôt d'une couche nickel-métal
WO2011156349A3 (fr) Procédés pour former des structures d'interconnexion
WO2010057652A8 (fr) Nanofils à la surface d'un substrat, leur procédé de fabrication et d'utilisation
SG138523A1 (en) Method of integrating triple gate oxide thickness
WO2015038093A3 (fr) Article formé par pulvérisation par plasma