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IN2012DN01226A - - Google Patents

Info

Publication number
IN2012DN01226A
IN2012DN01226A IN1226DEN2012A IN2012DN01226A IN 2012DN01226 A IN2012DN01226 A IN 2012DN01226A IN 1226DEN2012 A IN1226DEN2012 A IN 1226DEN2012A IN 2012DN01226 A IN2012DN01226 A IN 2012DN01226A
Authority
IN
India
Prior art keywords
solar cell
oxide
substrate
dents
ridges
Prior art date
Application number
Inventor
Matsui Yuji
Kato Toshimichi
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of IN2012DN01226A publication Critical patent/IN2012DN01226A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

To provide a transparent conductive substrate for a solar cell  whereby the fill factor (FF) and the open circuit voltage can be improved  and a solar cell using it. A transparent conductive substrate for a solar cell  comprising a substrate and at least a tin oxide layer formed thereon  wherein the tin oxide layer has ridges and dents on a surface which is not on the substrate side  an oxide having titanium as the main component is formed on the surface having the ridges and dents  the oxide is particles having an average size of from 1 to 100 nm  and the oxide is contained at a density of from 10 to 100 particles/µm2.
IN1226DEN2012 2009-07-29 2010-07-28 IN2012DN01226A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009176401 2009-07-29
PCT/JP2010/062730 WO2011013719A1 (en) 2009-07-29 2010-07-28 Transparent conductive substrate for solar cell, and solar cell

Publications (1)

Publication Number Publication Date
IN2012DN01226A true IN2012DN01226A (en) 2015-04-10

Family

ID=43529371

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1226DEN2012 IN2012DN01226A (en) 2009-07-29 2010-07-28

Country Status (8)

Country Link
US (1) US20120118362A1 (en)
EP (1) EP2461372A1 (en)
JP (1) JPWO2011013719A1 (en)
KR (1) KR20120036976A (en)
CN (1) CN102473742A (en)
IN (1) IN2012DN01226A (en)
TW (1) TW201117390A (en)
WO (1) WO2011013719A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8932898B2 (en) * 2011-01-14 2015-01-13 The Board Of Trustees Of The Leland Stanford Junior Univerity Deposition and post-processing techniques for transparent conductive films
KR101225739B1 (en) * 2011-04-22 2013-01-23 삼성코닝정밀소재 주식회사 ZnO BASED TRANSPARENT CONDUCTIVE THIN FILM FOR PHOTOVOLTAIC AND METHOD OF MANUFACTURING THEREOF
KR101421026B1 (en) * 2012-06-12 2014-07-22 코닝정밀소재 주식회사 Light extraction layer substrate for oled and method of fabricating thereof
JP5835200B2 (en) * 2012-12-04 2015-12-24 住友金属鉱山株式会社 Transparent conductive glass substrate with surface electrode and method for producing the same, thin film solar cell and method for producing the same
CN105745354B (en) 2013-11-19 2018-03-30 旭硝子株式会社 Film forming method, film and the glass plate with film
US10672920B2 (en) * 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with buffer layer
CN109524488B (en) * 2018-11-26 2020-08-18 西安交通大学 Preparation method of pyramid-like suede resistance-increasing layer with nano-scale protrusions
CN111668353B (en) * 2020-06-19 2021-12-17 錼创显示科技股份有限公司 Light emitting semiconductor structure and semiconductor substrate
TWI728846B (en) 2020-06-19 2021-05-21 錼創顯示科技股份有限公司 Light-emitting semiconductor structure and light-emitting semiconductor substrate

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269408A (en) * 1985-09-20 1987-03-30 三洋電機株式会社 Surface roughing of transparent conducting film
JPH01106472A (en) * 1987-10-20 1989-04-24 Sanyo Electric Co Ltd Solar cell
JPH06120534A (en) * 1992-10-07 1994-04-28 Sanyo Electric Co Ltd Amorphous solar cell
JP3253449B2 (en) * 1994-05-30 2002-02-04 三洋電機株式会社 Method for manufacturing photovoltaic device
JP3297380B2 (en) * 1998-08-07 2002-07-02 三菱重工業株式会社 Solar cell and method for manufacturing solar cell
JP4460108B2 (en) 1999-05-18 2010-05-12 日本板硝子株式会社 Method for manufacturing substrate for photoelectric conversion device
JP2002260448A (en) 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd Conductive film, method for manufacturing the same, substrate including the same, and photoelectric conversion device
EP1443527A4 (en) * 2001-10-19 2007-09-12 Asahi Glass Co Ltd TRANSPARENT CONDUCTIVE OXIDE LAYER SUBSTRATE, PROCESS FOR PRODUCING THE SAME, AND PHOTOELECTRIC CONVERSION ELEMENT
WO2004102677A1 (en) 2003-05-13 2004-11-25 Asahi Glass Company, Limited Transparent conductive substrate for solar battery and method for producing same
WO2005027229A1 (en) 2003-08-29 2005-03-24 Asahi Glass Company, Limited Base with transparent conductive film and method for producing same
US20080185036A1 (en) * 2004-11-29 2008-08-07 Toshiaki Sasaki Substrate For Thin Film Photoelectric Conversion Device and Thin Film Photoelectric Conversion Device Including the Same
JPWO2007058118A1 (en) * 2005-11-17 2009-04-30 旭硝子株式会社 Transparent conductive substrate for solar cell and method for producing the same
CN101459201A (en) * 2007-12-10 2009-06-17 台达电子工业股份有限公司 Solar cell and manufacturing method thereof
US7881023B2 (en) 2008-01-24 2011-02-01 Tdk Corporation Magnetoresistive device of the CPP type, and magnetic disk system

Also Published As

Publication number Publication date
KR20120036976A (en) 2012-04-18
JPWO2011013719A1 (en) 2013-01-10
EP2461372A1 (en) 2012-06-06
CN102473742A (en) 2012-05-23
US20120118362A1 (en) 2012-05-17
WO2011013719A1 (en) 2011-02-03
TW201117390A (en) 2011-05-16

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