[go: up one dir, main page]

IN2012DN00641A - - Google Patents

Download PDF

Info

Publication number
IN2012DN00641A
IN2012DN00641A IN641DEN2012A IN2012DN00641A IN 2012DN00641 A IN2012DN00641 A IN 2012DN00641A IN 641DEN2012 A IN641DEN2012 A IN 641DEN2012A IN 2012DN00641 A IN2012DN00641 A IN 2012DN00641A
Authority
IN
India
Prior art keywords
overlying
buffer layer
substrate
array
nanorods
Prior art date
Application number
Other languages
English (en)
Inventor
Selvamanickam Venkat
Majkic Goran
Marchevsky Maxim
Original Assignee
Univ Houston System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Houston System filed Critical Univ Houston System
Publication of IN2012DN00641A publication Critical patent/IN2012DN00641A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/80Constructional details
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632Intermediate layers, e.g. for growth control
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0828Introducing flux pinning centres
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/20Permanent superconducting devices
    • H10N60/203Permanent superconducting devices comprising high-Tc ceramic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/80Constructional details
    • H10N60/85Superconducting active materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/25Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/26Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
IN641DEN2012 2009-07-28 2010-07-27 IN2012DN00641A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22922509P 2009-07-28 2009-07-28
PCT/US2010/043411 WO2011017112A2 (fr) 2009-07-28 2010-07-27 Élément supraconducteur avec nanostructure préfabriquée pour amélioration de la constance du flux

Publications (1)

Publication Number Publication Date
IN2012DN00641A true IN2012DN00641A (fr) 2015-08-21

Family

ID=43527576

Family Applications (1)

Application Number Title Priority Date Filing Date
IN641DEN2012 IN2012DN00641A (fr) 2009-07-28 2010-07-27

Country Status (8)

Country Link
US (1) US8926868B2 (fr)
EP (1) EP2460197B1 (fr)
JP (1) JP5858912B2 (fr)
KR (1) KR101485060B1 (fr)
CN (2) CN102484197B (fr)
CA (1) CA2768516C (fr)
IN (1) IN2012DN00641A (fr)
WO (1) WO2011017112A2 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442629B2 (en) * 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
TW201228985A (en) * 2011-01-05 2012-07-16 Univ Nat Cheng Kung Nanorod-containing precursor powder, nanorod-containing superconductor bulk and method for manufacturing the same
US9564258B2 (en) 2012-02-08 2017-02-07 Superconductor Technologies, Inc. Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same
US9362025B1 (en) 2012-02-08 2016-06-07 Superconductor Technologies, Inc. Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same
DE102013210940B3 (de) * 2013-06-12 2014-07-03 THEVA DüNNSCHICHTTECHNIK GMBH Beschichtung technischer Substrate zur Herstellung supraleitender Schichten mit hoher Sprungtemperatur
US9410394B2 (en) 2013-12-11 2016-08-09 Schlumberger Technology Corporation Methods for minimizing overdisplacement of proppant in fracture treatments
US10832843B2 (en) 2015-03-17 2020-11-10 The University Of Houston System Superconductor compositions
WO2017217487A1 (fr) * 2016-06-16 2017-12-21 株式会社フジクラ Fil supraconducteur d'oxyde et son procédé de fabrication
CN108963067B (zh) * 2018-07-27 2022-04-29 武汉工程大学 一种ReBa2Cu3O7-x超导薄膜上制备钉扎层的方法
CN112839742A (zh) * 2018-10-14 2021-05-25 金属氧化物技术有限责任公司 没有柱状缺陷的超导体磁通钉扎
KR102805651B1 (ko) * 2019-02-18 2025-05-13 수퍼파워, 인크. 초전도체 와이어의 제작
CN110444658B (zh) * 2019-08-13 2020-08-11 中国科学院上海微系统与信息技术研究所 基于AlMn合金超导薄膜的TES微量能器及制备方法
US20230031577A1 (en) * 2021-07-08 2023-02-02 Superq Technologies India Pvt Ltd Method and systems for fabricating superconducting nanowire single photon detector (snspd)

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262083A (ja) 1988-08-29 1990-03-01 Canon Inc ジョセフソン接合の形成方法およびジョセフソン接合素子
EP0553593B1 (fr) 1992-01-28 1996-05-29 International Business Machines Corporation Structures d'ancrage des vortex pour films minces supraconducteurs et méthode pour leur fabrication
JP2747173B2 (ja) 1992-08-07 1998-05-06 日本電信電話株式会社 酸化物高温超伝導体単結晶薄膜形成方法
EP0612114B1 (fr) * 1993-02-15 1997-05-14 Sumitomo Electric Industries, Ltd. Procédé pour former une couche mince structurée en oxyde supraconducteur
US5897945A (en) * 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
US6190752B1 (en) 1997-11-13 2001-02-20 Board Of Trustees Of The Leland Stanford Junior University Thin films having rock-salt-like structure deposited on amorphous surfaces
US8119571B2 (en) * 2006-08-03 2012-02-21 Amit Goyal High performance electrical, magnetic, electromagnetic and electrooptical devices enabled by three dimensionally ordered nanodots and nanorods
JP3622147B2 (ja) * 2001-06-19 2005-02-23 独立行政法人産業技術総合研究所 柱状ピン止め中心を有する超伝導薄膜及びその製造方法
US20040266628A1 (en) * 2003-06-27 2004-12-30 Superpower, Inc. Novel superconducting articles, and methods for forming and using same
JP4495426B2 (ja) * 2003-08-29 2010-07-07 独立行政法人科学技術振興機構 超伝導膜およびその製造方法
WO2006078952A1 (fr) * 2005-01-21 2006-07-27 University Of California Procedes de fabrication d'un reseau periodique ordonne a longue portee de nano-elements, et articles comprenant ce reseau
JP2006233247A (ja) 2005-02-23 2006-09-07 Fujikura Ltd 薄膜形成装置
US8034745B2 (en) * 2005-08-01 2011-10-11 Amit Goyal High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods
US20070238619A1 (en) * 2005-09-06 2007-10-11 Superpower, Inc. Superconductor components
JP2010533985A (ja) 2007-07-19 2010-10-28 カリフォルニア インスティテュート オブ テクノロジー 半導体の規則配列構造
JP5017161B2 (ja) * 2008-03-27 2012-09-05 株式会社東芝 酸化物超電導体
US7919435B2 (en) * 2008-09-30 2011-04-05 Ut-Battelle, Llc Superconductor films with improved flux pinning and reduced AC losses

Also Published As

Publication number Publication date
US20110028328A1 (en) 2011-02-03
CN102484197A (zh) 2012-05-30
WO2011017112A2 (fr) 2011-02-10
EP2460197A4 (fr) 2014-01-15
CA2768516C (fr) 2015-07-14
JP5858912B2 (ja) 2016-02-10
KR20120051688A (ko) 2012-05-22
US8926868B2 (en) 2015-01-06
CN102484197B (zh) 2016-08-10
KR101485060B1 (ko) 2015-01-21
CA2768516A1 (fr) 2011-02-10
WO2011017112A3 (fr) 2011-04-28
JP2013501313A (ja) 2013-01-10
CN106065474B (zh) 2019-05-28
EP2460197A2 (fr) 2012-06-06
EP2460197B1 (fr) 2016-03-16
CN106065474A (zh) 2016-11-02

Similar Documents

Publication Publication Date Title
IN2012DN00641A (fr)
GB2523933A (en) Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same
WO2011032187A3 (fr) Dispositif de jonction de tunnel magnétique et fabrication
WO2010138811A3 (fr) Procédé permettant de fournir un dispositif à semi-conducteur flexible à températures élevées et son dispositif à semi-conducteur flexible
WO2011094211A3 (fr) Réduction de la latence dans les liaisons sérialiseur-désérialiseur
WO2008024380A3 (fr) Dispositifs électroniques organiques
WO2011156031A3 (fr) Procédé et système pour produire des éléments à jonction à pénétration par effet tunnel magnétique double inversées
WO2009023148A3 (fr) Dispositifs électroniques à nanofils et leur procédé de production
WO2008063337A3 (fr) Dispositifs à semi-conducteur sur diamant et procédés associés
EP2378570A3 (fr) Dispositif électroluminescent comprenant une structure d'extraction de lumière et son procédé de fabrication.
WO2012021227A3 (fr) Cellule solaire à hétérojonction
WO2009038897A3 (fr) Procédés et systèmes de fabrication de batteries à nanofils
WO2012141692A3 (fr) Procédé servant à transférer une couche de luminophore uniforme sur un article et structure électroluminescente fabriquée par le procédé
EP2537822A3 (fr) Article composite incluant une couche d'oxycarbure de silicium
WO2013019061A3 (fr) Équipement de fabrication d'un semi-conducteur pour un procédé épitaxial
WO2009082121A3 (fr) Dispositif électroluminescent à semiconducteur et son procédé de fabrication
WO2011043610A3 (fr) Appareil de génération d'énergie photovoltaïque et procédé pour sa fabrication
TW200745363A (en) Sputtering apparatus, method of driving the same, and method of manufacturing substrate using the same
WO2010065457A3 (fr) Procédé de formation d'un dispositif à semi-conducteurs pourvu d'une couche diélectrique et dispositif à semi-conducteurs obtenu
GB2499350A (en) Organic semiconductors
WO2011070316A3 (fr) Dispositif électronique
WO2009037753A1 (fr) Système de transfert de substrats
WO2013003420A3 (fr) Substrat semi-conducteur et procédé de fabrication associé
EP2315266A3 (fr) Dispositif électroluminescent, son procédé de fabrication, conditionnement de dispositif électroluminescent et système d'éclairage
SG161183A1 (en) Integrated circuit system employing stress-engineered layers