IN2013DE03218A - - Google Patents
Info
- Publication number
- IN2013DE03218A IN2013DE03218A IN3218DE2013A IN2013DE03218A IN 2013DE03218 A IN2013DE03218 A IN 2013DE03218A IN 3218DE2013 A IN3218DE2013 A IN 3218DE2013A IN 2013DE03218 A IN2013DE03218 A IN 2013DE03218A
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN3218DE2013 IN2013DE03218A (fr) | 2013-10-31 | 2013-10-31 | |
| CN201380080682.5A CN105745755B (zh) | 2013-10-31 | 2013-12-28 | 四端子栅控薄膜有机晶闸管 |
| PCT/IB2013/061383 WO2015063550A1 (fr) | 2013-10-31 | 2013-12-28 | Thyristor organique à couche mince commandé par une gâchette à quatre bornes |
| US15/026,705 US9831453B2 (en) | 2013-10-31 | 2013-12-28 | Four-terminal gate-controlled thin-film organic thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN3218DE2013 IN2013DE03218A (fr) | 2013-10-31 | 2013-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2013DE03218A true IN2013DE03218A (fr) | 2015-05-08 |
Family
ID=53003421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN3218DE2013 IN2013DE03218A (fr) | 2013-10-31 | 2013-10-31 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9831453B2 (fr) |
| CN (1) | CN105745755B (fr) |
| IN (1) | IN2013DE03218A (fr) |
| WO (1) | WO2015063550A1 (fr) |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4176371A (en) | 1976-01-09 | 1979-11-27 | Westinghouse Electric Corp. | Thyristor fired by overvoltage |
| US5359256A (en) | 1992-07-30 | 1994-10-25 | The United States Of America As Represented By The Secretary Of The Navy | Regulatable field emitter device and method of production thereof |
| DE4431294A1 (de) | 1994-09-02 | 1996-03-07 | Abb Management Ag | Abschaltbarer Thyristor für hohe Blockierspannungen und kleiner Bauelementdicke |
| US6933541B1 (en) * | 1997-09-30 | 2005-08-23 | Virginia Tech Intellectual Properties, Inc. | Emitter turn-off thyristors (ETO) |
| US6648711B1 (en) | 1999-06-16 | 2003-11-18 | Iljin Nanotech Co., Ltd. | Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter |
| US6512274B1 (en) | 2000-06-22 | 2003-01-28 | Progressant Technologies, Inc. | CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same |
| EP1306909A1 (fr) * | 2001-10-24 | 2003-05-02 | Interuniversitair Micro-Elektronica Centrum | Transistor organique ambipolaire |
| US7385230B1 (en) | 2005-02-08 | 2008-06-10 | The University Of Connecticut | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
| GB2441355B (en) | 2006-08-31 | 2009-05-20 | Cambridge Display Tech Ltd | Organic electronic device |
| JP5328122B2 (ja) * | 2007-08-20 | 2013-10-30 | ローム株式会社 | 有機薄膜トランジスタ |
| US7935961B2 (en) * | 2007-10-19 | 2011-05-03 | Samsung Electronics Co., Ltd. | Multi-layered bipolar field-effect transistor and method of manufacturing the same |
| WO2009087793A1 (fr) * | 2008-01-11 | 2009-07-16 | National Institute Of Japan Science And Technology Agency | Transistor à effet de champ, procédé de fabrication de transistor à effet de champ, intermédiaire et intermédiaire secondaire |
| CN102203974A (zh) * | 2008-10-29 | 2011-09-28 | 皇家飞利浦电子股份有限公司 | 双栅极场效应晶体管和生产双栅极场效应晶体管的方法 |
| EP2363904A3 (fr) * | 2010-03-02 | 2013-02-27 | Ricoh Company, Limited | Élément semi-conducteur organique et électrode organique |
| ITRM20100107A1 (it) * | 2010-03-12 | 2011-09-13 | Consiglio Nazionale Ricerche | Transistor a effetto di campo a base di molecole organiche emettitore di luce |
| US8664648B2 (en) * | 2010-07-22 | 2014-03-04 | National Tsing Hua University | N-type organic thin film transistor, ambipolar field-effect transistor, and method of fabricating the same |
| US9899616B2 (en) * | 2012-04-05 | 2018-02-20 | Novaled Gmbh | Organic field effect transistor and method for producing the same |
| WO2013171520A1 (fr) * | 2012-05-18 | 2013-11-21 | Isis Innovation Limited | Dispositif optoélectronique comprenant des pérovskites |
| WO2014102625A1 (fr) * | 2012-12-24 | 2014-07-03 | Indian Institute Of Technology Kanpur | Transistor à couche mince comprenant un canal induit par courant |
-
2013
- 2013-10-31 IN IN3218DE2013 patent/IN2013DE03218A/en unknown
- 2013-12-28 CN CN201380080682.5A patent/CN105745755B/zh not_active Expired - Fee Related
- 2013-12-28 WO PCT/IB2013/061383 patent/WO2015063550A1/fr not_active Ceased
- 2013-12-28 US US15/026,705 patent/US9831453B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015063550A1 (fr) | 2015-05-07 |
| US20160254469A1 (en) | 2016-09-01 |
| CN105745755B (zh) | 2018-12-11 |
| US9831453B2 (en) | 2017-11-28 |
| CN105745755A (zh) | 2016-07-06 |