HK1234167A1

HK1234167A1 - Carrier method, exposure method, exposure apparatus, and device manufacturing method

Info

Publication number: HK1234167A1
Application number: HK17107635.7A
Authority: HK
Inventors: 佑一柴崎
Original assignee: 株式会社尼康
Priority date: 2011-12-29
Filing date: 2014-09-19
Publication date: 2018-02-09

Description

Transfer method, exposure apparatus, and device manufacturing method

The present application is a divisional application of the patent application entitled "apparatus for loading a flexible substrate and lithographic apparatus" filed on 2012, 12/28, and filed under the reference 201280065171.1.

Technical Field

The present invention relates to a carrying-in method, an exposure method, a transport system, an exposure apparatus, and a device manufacturing method, and more particularly, to a transport method for carrying a thin plate-like object into a holding device, an exposure method using the carrying-in method, a transport system for transporting a thin plate-like object, an exposure apparatus including the transport system, and a device manufacturing method using the exposure method or the exposure apparatus.

Background

Conventionally, a photolithography process for manufacturing electronic devices (microdevices) such as semiconductor devices (integrated circuits, etc.) and liquid crystal display devices mainly uses a step & repeat projection exposure apparatus (so-called stepper) or a step & scan projection exposure apparatus (so-called scanning stepper (also called scanner)) or the like.

Substrates such as wafers and glass plates to be exposed used in such exposure apparatuses are becoming larger (for example, wafers (wafers) are becoming larger every 10 years). At present, 300mm wafers having a diameter of 300mm are mainly used, but the age of using 450mm wafers having a diameter of 450mm is coming closer. Once a 450mm wafer is used, the number of dies (chips) that can be extracted from one wafer is more than 2 times that of the current 300mm wafer, which greatly contributes to cost reduction. Further, in terms of effective utilization of energy, water, and other resources, it is possible to reduce all resources required for 1 chip, and it is expected to be highly desirable.

However, 450mm wafers are much weaker than 300mm wafers because the thickness of the wafer does not grow proportionally to the size. Therefore, it is considered that the same method as that of the conventional 300mm wafer is difficult to realize, for example, when the wafer is simply carried. Therefore, the inventors have proposed a loading method that can be used even for 450mm wafers, in which an object is held by a transfer member from above in a non-contact manner and loaded into a holding device (see, for example, patent document 1).

However, according to the subsequent studies, it has been found that the bernoulli chuck disclosed in patent document 1 holds the wafer in a non-contact manner, and that even the current 300mm wafer may have a positional deviation amount exceeding a desired range during loading. Therefore, the 450mm wafer position deviation amount becomes larger, and it is expected that alignment measurement (position measurement of a mark on the wafer) to be performed thereafter becomes difficult.

Further, since semiconductor devices are becoming finer, the exposure apparatus is required to have higher resolution. As means for improving the resolution, there are a reduction in the wavelength of exposure light and an increase in the numerical aperture of a projection optical system (increase in NA). In order to maximize the substantial numerical aperture of the projection optical system, various liquid immersion exposure apparatuses have been proposed which expose a wafer through the projection optical system and a liquid (see, for example, patent document 2). This patent document 2 discloses an exposure apparatus and an exposure method thereof, which mainly aim to perform a wafer alignment (mark detection) operation and a surface position information (focus information) detection operation in a short time.

However, if a 450mm wafer is formed, even if the exposure apparatus and the exposure method of the conventional example disclosed in patent document 2 are used as they are, a situation in which the throughput is insufficient is expected, and an exposure apparatus capable of further improving the throughput is expected.

Reference list

Patent document

[ patent document 1] specification No. 2010/0297562 of U.S. patent application publication;

[ patent document 2] specification of U.S. patent application publication No. 2008/0088843.

Disclosure of Invention

According to a 1 st aspect of the present invention, there is provided a 1 st carrying-in method for carrying a thin plate-like object into an area on a holding device, the method including: an operation of supporting the object from below by a vertically movable supporting member while holding the object from above in a non-contact manner by an adsorbing member in a region above the holding device; and an operation of driving the suction member and the support member to descend until the lower surface of the object contacts the holding device while maintaining the state of holding the object by the suction member and the state of supporting the object by the support member, and releasing the support of the object by the support member and the holding by the suction member at a position where the lower surface of the object contacts the holding device.

According to this method, the object can be carried into an area on the holding device without positional displacement (with good reproducibility) while maintaining high flatness.

According to a 2 nd aspect of the present invention, there is provided a 1 st exposure method comprising: an operation of carrying the thin plate-like object into one area on the holding device by the above-described 1 st carrying-in method; and an operation of exposing the object held by the holding device with an energy beam after the carrying in, and forming a pattern on the object.

According to a 3 rd aspect of the present invention, there is provided a device manufacturing method comprising: an operation of exposing the object by the first exposure method; and developing the exposed object.

According to a 4 th aspect of the present invention, there is provided a 2 nd carrying-in method for carrying a thin plate-like object into an area on a holding device, the method including: an operation of supporting the object in a non-contact manner from above by a 1 st support member and in contact with a 2 nd support member different from the 1 st support member, while supporting the object in a region above the holding device; moving the 1 st and 2 nd support members relative to the holding device until the holding device is brought into contact with the lower surface of the object supported by the 1 st and 2 nd support members; and an operation of holding the object by the holding means so that the lower surface is brought into contact with the holding means.

According to a 5 th aspect of the present invention, there is provided a 2 nd exposure method comprising: an operation of carrying the thin plate-like object into one area on the holding device by the above-described 2 nd carrying-in method; and an operation of exposing the object held by the holding device with an energy beam after the carrying in, and forming a pattern on the object.

According to a 6 th aspect of the present invention, there is provided a device manufacturing method comprising: an operation of exposing the object by the 2 nd exposure method; and developing the exposed object.

According to a 7 th aspect of the present invention, there is provided a 3 rd carrying-in method for carrying a thin plate-like object into an area on a holding device, the method including: an operation of displacing at least a part of the object supported in a non-contact manner from above by the 1 st support member in a vertical direction so that deformation of the object supported in a non-contact manner by the 1 st support member is suppressed; and the 1 st support member and the holding device are relatively moved in a vertical direction so as to suppress an operation in which the deformed object is held by the holding device.

According to this method, the object can be carried into the holding device while maintaining a high flatness.

According to an 8 th aspect of the present invention, there is provided a 3 rd exposure method comprising: an operation of carrying the thin plate-like object into one area on the holding device by the above-described 3 rd carrying-in method; and an operation of exposing the object held by the holding device with an energy beam after the carrying in, and forming a pattern on the object.

According to a 9 th aspect of the present invention, there is provided a device manufacturing method comprising: an operation of exposing the object by the above-described 3 rd exposure method; and developing the exposed object.

According to a 10 th aspect of the present invention, there is provided a 4 th carrying-in method for carrying a thin plate-like object into an area on a holding device, the method including: relatively moving a 1 st support member and a holding device so that a lower surface of an object supported by the 1 st support member from above the holding device is in contact with the holding device; an operation of applying a downward force to at least a part of the object whose lower surface is in contact with the holding device from above by the 1 st support member; and an operation of holding the object to which the downward force is applied by the holding means.

According to an 11 th aspect of the present invention, there is provided a 4 th exposure method comprising: an operation of carrying the thin plate-like object into one area on the holding device by the 4 th carrying-in method; and an operation of exposing the object held by the holding device with an energy beam after the carrying in, and forming a pattern on the object.

According to a 12 th aspect of the present invention, there is provided a device manufacturing method comprising: an operation of exposing the object by the 4 th exposure method; and developing the exposed object.

According to a 13 th aspect of the present invention, there is provided a loading system for conveying a thin plate-like object, the system including: a holding device for holding the object and moving along a predetermined plane; an adsorption member which holds the object from above in a non-contact manner and is vertically movable above a 1 st position on a moving surface of the holding device; and a support member provided in the holding device, the support member being capable of vertically moving while supporting the object held by the suction member from below when the holding device is located at the 1 st position, wherein the suction member and the support member are driven downward until a lower surface of the object contacts the holding device and the support member is released from support by the support member and the holding member while maintaining a state of holding the object by the suction member and a state of support of the object by the support member.

According to this method, the object can be carried into the holding device without positional deviation (with good reproducibility) while maintaining high flatness.

According to a 14 th aspect of the present invention, there is provided a 1 st exposure apparatus for exposing a thin plate-like object with an energy beam and forming a pattern on the object, comprising: the loading system includes the holding device having a measuring surface provided on a surface substantially parallel to the predetermined surface; a movable body that is movable along the predetermined plane and supports the holding device so as to be relatively movable along the predetermined plane; a measurement system that irradiates the measurement surface with at least one measurement beam and receives return light of the measurement beam from the measurement surface, thereby measuring positional information of the holding device at least within the predetermined surface; and a drive system that drives the holding device, either alone or integrally with the movable body, based on the positional information measured by the measurement system.

According to this apparatus, the drive system drives the holding device alone or integrally with the movable body based on the positional information measured by the measurement system, and exposes the object carried into a region on the holding device while maintaining a high flatness. Therefore, high-precision exposure of the object becomes possible.

According to a 15 th aspect of the present invention, there is provided a device manufacturing method comprising: an operation of exposing the object by the first exposure device 1; and developing the exposed object.

According to a 16 th aspect of the present invention, there is provided a 5 th exposure method of exposing an object with an energy beam via an optical system and a liquid, the method comprising: an operation of exposing the object held by a movable body movable along a predetermined plane including a 1 st axis and a 2 nd axis orthogonal to each other, at an exposure station via the optical system and the liquid; and an operation of moving the movable body holding the object to the exposure station without contacting the liquid from a loading position located on one side of the 1 st direction of the exposure station in parallel with the 1 st axis before exposure, and detecting a plurality of marks on the object by a plurality of mark detection systems having different positions of a detection region in a 2 nd direction in parallel with the 2 nd axis during the movement.

According to this method, the moving body including the moving path from the loading position to the exposure station including the moving path for detecting the mark can be moved at a higher speed and at a higher acceleration than in the exposure method of the conventional example.

According to a 17 th aspect of the present invention, there is provided a device manufacturing method comprising: an operation of exposing the object by the 5 th exposure method; and developing the exposed object.

According to an 18 th aspect of the present invention, there is provided a 2 nd exposure apparatus for exposing an object with an energy beam via an optical system and a liquid, the apparatus comprising: a 1 st moving body that holds the object and is movable on a predetermined plane including a 1 st axis and a 2 nd axis orthogonal to each other; an exposure unit that includes a liquid immersion member that supplies the liquid immediately below the optical system to form a liquid immersion area, and exposes the liquid on the object held by the first movable body 1 via the liquid immersion area; and a measuring unit in which a plurality of mark detection systems are disposed, which are positioned on one side of a 1 st direction parallel to the 1 st axis with respect to the exposure unit, and whose positions in a 2 nd direction parallel to the 2 nd axis are different from each other, and which detects a plurality of marks on the object by the plurality of mark detection systems, wherein the 1 st direction position information is set between the optical systems such that, when the 1 st moving body moves from a loading position set on the 1 st direction side of the measuring unit to the exposure unit and the plurality of mark detection systems detect the marks on the object in the middle of the moving path, no part of the 1 st moving body contacts the liquid immersion area until the detection of the plurality of marks is completed.

According to this apparatus, the 1 st moving body including the moving path for detecting the mark from the loading position to the exposure section can be moved at a higher speed and at a higher acceleration than the exposure apparatus of the conventional example.

According to a 19 th aspect of the present invention, there is provided a device manufacturing method comprising: an operation of exposing the object by using the 2 nd exposure apparatus; and developing the exposed object.

According to a 20 th aspect of the present invention, there is provided a 6 th exposure method of exposing an object with an energy beam via an optical system, the method comprising: an operation of exposing the object held by a movable body movable along a predetermined plane including a 1 st axis and a 2 nd axis orthogonal to each other, at an exposure station via the optical system; and an operation of moving the movable body holding the object from a loading position located on one side of the exposure station in a 1 st direction parallel to the 1 st axis to the exposure station before exposure, and detecting a plurality of marks on the object by a mark detection system having a detection area arranged on one side of the optical system in the 1 st direction during the movement; and an operation of carrying out the exposed object from an area on the movable body at an unloading position set between a detection area of the mark detection system and the exposure station.

According to this method, a moving body holding an object is moved from a loading position to an exposure station in the 1 st direction, and a plurality of marks on the object are detected by a mark detection system in the middle of the movement. Next, after exposing the object held by the movable body at the exposure station, the movable body carries out the exposed object from an area on the movable body at an unloading position set in the moving path before returning from the exposure station to the loading position in the 1 st direction. Therefore, a series of processes of carrying in (loading) an object to a region on the movable body, detecting a mark on the object, exposing the object, and carrying out (unloading) an exposed object from a region on the movable body can be efficiently performed in a short time when the movable body reciprocates from a loading position located apart in the 1 st direction to the exposure station.

According to a 21 st aspect of the present invention, there is provided a device manufacturing method comprising: an operation of exposing the object by the above-described 6 th exposure method; and developing the exposed object.

According to a 22 th aspect of the present invention, there is provided a 3 rd exposure apparatus for exposing an object with an energy beam via an optical system, the apparatus comprising: a movable body that can hold the object and moves along a predetermined plane including a 1 st axis and a 2 nd axis orthogonal to each other; an exposure section that has the optical system and exposes the object held by the movable body; a measuring section having a plurality of mark detection systems each having a detection area arranged on one side of the 1 st direction parallel to the 1 st axis with respect to the exposure section on one side of the 1 st direction of the optical system, the plurality of mark detection systems detecting a plurality of marks on the object; a loading position set on one side of the measuring section in the 1 st direction, for carrying the object into a region on the movable body; and an unloading position, which is set between the measuring section and the exposure section, for carrying out the object out of an area on the movable body.

According to this method, a moving body holding an object is moved from a loading position to an exposure section in the 1 st direction, and a plurality of marks on the object are detected by a mark detection system at a measurement section located on a moving path in the middle of the movement. Next, after the exposure unit exposes the object held by the movable body, the exposed object is carried out from one area on the movable body at an unloading position set in a moving path of the movable body from the exposure unit to the measurement unit before returning from the exposure unit to the loading position in the 1 st direction. Thus, a series of processes of carrying in (loading) an object to a region on the movable body, detecting a mark on the object, exposing the object, and carrying out (unloading) an exposed object from a region on the movable body can be efficiently performed in a short time when the movable body reciprocates from a loading position located apart in the 1 st direction to the exposure section.

According to a 23 th aspect of the present invention, there is provided a device manufacturing method comprising: an operation of exposing the object by using the 3 rd exposure apparatus; and developing the exposed object.

According to a 24 th aspect of the present invention, there is provided a 7 th exposure method of exposing an object with an energy beam via an optical system, the method comprising: an operation of exposing the object held by a movable body movable along a predetermined plane including a 1 st axis and a 2 nd axis orthogonal to each other, at an exposure station via the optical system; an operation of moving the movable body holding the object from a loading position located on one side of the exposure station in a 1 st direction parallel to the 1 st axis toward the exposure station before exposure; and an operation of carrying out the exposed object from an area on the movable body at an unloading position set between the exposure station and the loading position; in the exposure, the exposure is started from a predetermined 1 st area distant from the unloading position while the object held by the movable body and the movable body move along a predetermined path, and the area in the vicinity of the 1 st area is finally exposed.

According to this method, at the exposure station, the object system held by the movable body is exposed from a predetermined 1 st area distant from the unloading position while moving along a predetermined path together with the movable body, and the area in the vicinity of the 1 st area is finally exposed. That is, at the time of exposure of the object, the object (moving body) is located at the position closest to the unloading position in the moving path of the object at the time of exposure, at the time of exposure start and the time of exposure end. Therefore, after the exposure is completed, the exposed object can be moved to the unloading position in a substantially shortest time to unload the object from the movable body, and then the movable body can be returned to the loading position. The exposed object can be unloaded quickly and on the moving path of the moving body returned from the exposure station to the loading position.

According to a 25 th aspect of the present invention, there is provided a device manufacturing method comprising: an operation of exposing the object by the 7 th exposure method; and developing the exposed object.

According to a 26 th aspect of the present invention, there is provided a 4 th exposure apparatus for exposing an object with an energy beam via an optical system, the apparatus comprising: a movable body that can hold the object and moves along a predetermined plane including a 1 st axis and a 2 nd axis orthogonal to each other; an exposure section that has the optical system and exposes the object held by the movable body; a loading position set on one side of the exposure portion in a 1 st direction parallel to the 1 st axis, for carrying the object into an area on the movable body; and an unloading position, set between the exposure part and the loading position, for carrying out the object out of an area on the moving body; in the exposure unit, the exposure is started from a predetermined 1 st area distant from the unloading position while the object held by the movable body and the movable body move along a predetermined path, and the area in the vicinity of the 1 st area is finally exposed.

According to this apparatus, in the exposure unit, exposure is started from a predetermined 1 st area distant from the unloading position while the object held by the movable body and the movable body move along a predetermined path, and the area in the vicinity of the 1 st area is finally exposed. That is, at the time of exposure of the object, the object (moving body) is located at the position closest to the unloading position in the moving path of the object at the time of exposure, at the time of exposure start and the time of exposure end. Therefore, after the exposure is completed, the exposed object can be moved to the unloading position in a substantially shortest time to unload the object from the movable body, and then the movable body can be returned to the loading position. The exposed object can be unloaded quickly and on the moving path of the moving body returned from the exposure section to the loading position.

According to a 27 th aspect of the present invention, there is provided a device manufacturing method comprising: an operation of exposing the object by using the 4 th exposure apparatus; and developing the exposed object.

According to a 28 th aspect of the present invention, there is provided a 5 th exposure apparatus for exposing a substrate through an optical system, the apparatus comprising: a substrate stage having a holding member on which the substrate is placed; a conveying device having a 1 st supporting member for supporting the substrate from above in a non-contact manner and a 2 nd supporting member different from the 1 st supporting member for supporting the substrate in contact therewith; and an actuator that relatively moves the 1 st and 2 nd support members and the holding member in at least a vertical direction so that the substrate supported by the 1 st and 2 nd support members is transferred to the holding member.

According to a 29 th aspect of the present invention, there is provided a device manufacturing method comprising: exposing the substrate by the 5 th exposure device; and developing the substrate after exposure.

According to a 30 th aspect of the present invention, there is provided a 6 th exposure apparatus for exposing a substrate through an optical system, the apparatus comprising: a substrate stage having a holding member on which the substrate is placed; a conveying device having a 1 st supporting member for supporting the substrate from above in a non-contact manner; a displacement device for displacing at least a part of the substrate supported by the 1 st support member in a vertical direction; and an actuator that relatively moves the 1 st supporting member and the holding member in at least a vertical direction so that the substrate supported by the 1 st supporting member is transferred to the holding member, wherein the substrate is displaced by the displacement device before the holding member holds the substrate.

According to a 31 st aspect of the present invention, there is provided a device manufacturing method comprising: exposing the substrate by the 6 th exposure device; and developing the substrate after exposure.

According to a 32 th aspect of the present invention, there is provided a 7 th exposure apparatus for exposing a substrate through an optical system, the apparatus comprising: a substrate stage having a holding member on which the substrate is placed; a conveying device having a 1 st supporting member for supporting the substrate from above in a non-contact manner; a driver that relatively moves the 1 st support member and the holding member in at least a vertical direction so that the substrate supported by the 1 st support member is handed over to the holding member; and a controller that controls the 1 st support member so that a downward force is applied from above to at least a part of the substrate transferred to the holding member through the 1 st support member; the substrate to which the downward force is applied is held by the holding member.

According to a 33 th aspect of the present invention, there is provided a device manufacturing method comprising: an operation of exposing the substrate by the 7 th exposure apparatus; and developing the substrate after exposure.

Drawings

FIG. 1 is a view schematically showing the structure of an exposure apparatus according to one embodiment;

fig. 2(a) is a plan view showing wafer stage WST of fig. 1, and fig. 2(B) is a view (front view) of wafer stage WST viewed from the-Y direction;

fig. 3(a) is a view (front view) of measurement stage MST of fig. 1 viewed from the-Y direction, fig. 3(B) is a view (side view) of measurement stage MST viewed from the + X direction, and fig. 3(C) is a plan view showing measurement stage MST;

fig. 4 is a diagram showing the arrangement of the 1 st to 4 th top-side encoder systems, the alignment system, the multipoint AF system, and the like included in the exposure apparatus of fig. 1 with reference to the projection optical system;

FIG. 5 is a diagram to illustrate a specific readhead configuration for the 1 st to 4 th top side encoder systems of FIG. 4;

fig. 6(a) is a schematic front view (view viewed from the-Y direction) showing the gripper unit, and fig. 6(B) is a schematic top view of the gripper unit;

FIG. 7 is a view for explaining a schematic configuration of the 1 st backside encoder system of FIG. 1;

fig. 8(a) is a perspective view showing a front end portion of the measurement arm of the 2 nd backside encoder system, and fig. 8(B) is a plan view showing the front end portion of the measurement arm of fig. 8 (a);

fig. 9(a) is a view for explaining a schematic configuration of the 1 st backside encoder system of fig. 1, and fig. 9(B) is a perspective view showing a distal end portion of a measurement arm of the 2 nd backside encoder system;

fig. 10(a) and 10(B) are diagrams for explaining the six-degree-of-freedom direction position measurement and the XYZ grid difference measurement of the fine movement stage WFS performed by using the 1 st backside encoder system 70A;

FIGS. 11(A) to 11(C) are views for explaining the case of obtaining a Δ X map by differential measurement;

FIGS. 12(A) and 12(B) are graphs showing examples of the Δ Y graph and the Δ Z graph, respectively;

fig. 13(a) is a diagram showing a position measurement process of wafer table WTB by the 1 st topside encoder system and the 1 st backside encoder system in parallel, and fig. 13(B) is a diagram showing an example of a combined position signal obtained by the above position measurement when the switching section is set to the 1 st mode;

FIGS. 14(A) and 14(B) are diagrams for explaining the updating of the coordinate system of the top-side 1 encoder system;

FIG. 15 is a view for explaining the constitution of the unloading apparatus;

FIG. 16 is a block diagram showing the input/output relationship of a main controller mainly configured by a control system of an exposure apparatus according to an embodiment;

fig. 17 is a diagram showing an example of a specific configuration of the 1 st and 2 nd fine movement stage position measurement systems of fig. 16;

fig. 18 is a block diagram showing an example of the configuration of the switching unit 150A of fig. 16;

fig. 19 is a diagram (1) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 20(a) to 20(D) are diagrams (fig. 2) for explaining the parallel processing operation using wafer stage WST and measurement stage MST, and are diagrams for explaining the order of loading onto the wafer stage;

fig. 21 is a diagram (fig. 3) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 22 is a diagram (fig. 4) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 23 is a diagram (fig. 5) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 24 is a diagram (fig. 6) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 25 is a diagram (fig. 7) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 26(a) to 26(D) are diagrams (fig. 8) for explaining the parallel processing operation using wafer stage WST and measurement stage MST, and for explaining the operation of carrying in the next wafer to the lower side of the chuck unit;

fig. 27 is a diagram (fig. 9) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 28 is a diagram (10) for explaining a parallel processing operation using wafer stage WST and measurement stage MST, and a diagram for explaining wire check;

fig. 29 is a diagram (fig. 11) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 30 is a diagram (12) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 31 is a diagram (13) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 32(a) to 32(D) are diagrams (fig. 14) for explaining the parallel processing operation using wafer stage WST and measurement stage MST, and for explaining the procedure of transferring a wafer waiting at the standby position to the transfer position to the wafer transfer system;

fig. 33 is a diagram (fig. 15) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 34 is a diagram (16) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 35 is a diagram (fig. 17) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 36(a) to 36(D) are diagrams (fig. 18) for explaining a parallel processing operation using wafer stage WST and measurement stage MST, and for explaining a procedure of unloading an exposed wafer from the wafer stage;

fig. 37 is a diagram (fig. 19) for explaining a parallel processing operation using wafer stage WST and measurement stage MST;

fig. 38(a) to 38(E) are diagrams (20) for explaining the parallel processing operation using wafer stage WST and measurement stage MST, and are diagrams for explaining the wafer transfer procedure from the unloading position to the standby position;

fig. 39 is a diagram for explaining a modification of the measurement system that uses the position of the measurement stage constituted by the encoder system instead of the measurement stage position measurement system constituted by the interferometer system.

Detailed Description

An embodiment will be described below with reference to fig. 1 to 38 (E).

Fig. 1 schematically shows a configuration of an exposure apparatus 100 according to an embodiment. The exposure apparatus 100 is a step & scan (step & scan) type projection exposure apparatus, i.e., a so-called scanner. As will be described later, in the present embodiment, the projection optical system PL is provided. Hereinafter, a direction parallel to the optical axis AX of the projection optical system PL will be referred to as a Z-axis direction (Z direction), a direction in which the reticle R and the wafer W are relatively scanned in a plane orthogonal thereto will be referred to as a Y-axis direction (Y direction), a direction orthogonal to the Z-axis and the Y-axis will be referred to as an X-axis direction (X direction), and directions of rotation (tilt) about the X-axis, the Y-axis, and the Z-axis will be referred to as θ X, θ Y, and θ Z directions, respectively.

As shown in fig. 1, exposure apparatus 100 includes an exposure unit 200 disposed near the + Y-side end on base plate 12, a measurement unit 300 disposed near the-Y-side end on base plate 12, a wafer stage WST and a measurement stage MST that move two-dimensionally in the XY plane on base plate 12 independently, and a control system for these stages. Hereinafter, for convenience of explanation, the exposure station 200 and the measurement station 300 will be referred to by the same reference numerals as those used for the exposure section and the measurement section as terms for displaying the respective positions of the exposure section 200 and the measurement section 300.

The chassis 12 is supported on the ground substantially horizontally (parallel to the XY plane) by a vibration isolation mechanism (not shown). The chassis 12 is constituted by a member having a flat plate-like outer shape. In fig. 1, wafer stage WST is located at exposure station 200, and wafer W is held on wafer stage WST (more specifically, wafer table WTB described later). The measurement stage MST is located in or near the exposure station 200. During an exposure operation of wafer W using wafer stage WST, measurement stage MST is located at a predetermined position (a retracted position or a standby position) that is spaced apart from the lower side of projection optical system PL so as not to contact wafer stage WST that moves under projection optical system PL. Before the end of the exposure operation of wafer W, measurement stage MST is relatively moved so as to approach wafer stage WST moving below projection optical system PL, and at the latest at the end of the exposure operation, wafer stage WST and measurement stage MST are located at positions close to (or in contact with) each other. Further, wafer stage WST and measurement stage MST that are close to each other move relative to projection optical system PL, and measurement stage MST is disposed opposite to projection optical system PL instead of wafer stage WST. Further, at least a part of the relative movement operation for bringing wafer stage WST and measurement stage MST close to each other and positioning them may be performed after the exposure operation of wafer W.

The exposure unit 200 includes an illumination system 10, a reticle stage RST, a projection unit PU, a local immersion device 8, and the like.

The illumination system 10 includes a light source, an illumination uniformizing optical system having an optical integrator and the like, and an illumination optical system such as a reticle blind (both not shown), as disclosed in, for example, U.S. patent application publication No. 2003/0025890. The illumination system 10 illuminates a slit illumination area IAR on a reticle R set (limited) by a reticle blind (also referred to as a mask system) with substantially uniform illumination by illumination light (exposure light) IL. Here, as the illumination light IL, for example, an ArF excimer laser (wavelength 193nm) is used.

On reticle stage RST, reticle R having a pattern surface (lower surface in fig. 1) on which a circuit pattern or the like is formed is fixed by, for example, vacuum suction. Reticle stage RST is driven slightly in the XY plane by reticle stage driving system 11 (not shown in fig. 1, see fig. 16) including, for example, a linear motor and the like, and is driven at a predetermined scanning speed in the scanning direction (Y-axis direction in the left-right direction in the paper plane in fig. 1).

Positional information (including rotation information in the θ z direction) in the XY plane of reticle stage RST is detected at any time with an analysis capability of, for example, about 0.25nm by a reticle laser interferometer (hereinafter referred to as "reticle interferometer") 13 via a movable mirror 15 (actually, a Y movable mirror (or retroreflector) having a reflecting surface orthogonal to the Y axis direction and an X movable mirror having a reflecting surface orthogonal to the X axis direction) fixed to reticle stage RST. The measurement values of the reticle interferometer 13 are sent to a main controller 20 (not shown in fig. 1, see fig. 16). Instead of the reticle interferometer 13, an encoder disclosed in, for example, specification No. 7,839,485 may be used to measure positional information of the reticle stage RST. In this case, one of the grid member (scale plate or grid plate) forming the grid and the encoder head may be provided on the lower surface side of reticle stage RST, and the other may be disposed below reticle stage RST, or one of the grid portion and the encoder head may be provided on the upper surface side of reticle stage RST, and the other may be disposed above reticle stage RST. Reticle stage RST may have a coarse fine movement structure in the same manner as wafer stage WST described later.

Projection unit PU is disposed below reticle stage RST in fig. 1. The projection unit PU is supported by a main frame (metrology frame) BD horizontally supported by a support member (not shown) via a flange portion FLG provided on the outer peripheral portion thereof. Main holder BD constitutes a part of a main body holder of exposure apparatus 100 on which at least a part of the illumination optical system or reticle stage RST is mounted, and in the present embodiment, is supported by a plurality of (for example, three or four) support members (not shown) arranged on an installation surface (for example, a floor surface or the like) via vibration isolation mechanisms, respectively. Further, a chassis 12 and the like described later are also disposed on the installation surface. The vibration-proof mechanism may be disposed between each support member and the main stand BD. Further, as disclosed in, for example, international publication No. 2006/038952, the projection unit PU may be suspended and supported with respect to a part of the body frame disposed above the projection unit PU.

The projection unit PU includes a lens barrel 40 and a projection optical system PL held in the lens barrel 40. As the projection optical system PL, for example, a refractive optical system is used which is configured by a plurality of optical elements (lens elements) arranged along an optical axis AX parallel to the Z axis. The projection optical system PL is, for example, telecentric on both sides and has a predetermined projection magnification (for example, 1/4 times, 1/5 times, 1/8 times, or the like). Therefore, when the illumination area IAR on the reticle R is illuminated with the illumination light IL from the illumination system 10, a reduced image of the circuit pattern (a partial reduced image of the circuit pattern) of the reticle R in the illumination area IAR is formed via the projection optical system PL (projection unit PU) by the illumination light IL of the reticle R disposed so that the 1 st surface (object surface) of the projection optical system PL substantially coincides with the pattern surface, that is, an exposure area IA is formed in an area (hereinafter also referred to as an exposure area IA) conjugate to the illumination area IAR on the wafer W disposed on the 2 nd surface (image surface) side of the projection optical system PL and coated with a resist (sensitive agent) on the surface. Next, by synchronously driving reticle stage RST and fine movement stage WFS (more precisely, fine movement stage WFS described later that holds wafer W), reticle R is moved in the scanning direction (Y-axis direction) with respect to illumination area IAR (illumination light IL), and wafer W is moved in the scanning direction (Y-axis direction) with respect to exposure area IA (illumination light IL), so that scanning exposure of one irradiation area (divisional area) on wafer W is performed, and the pattern of reticle R is transferred to this irradiation area. That is, in the present embodiment, the pattern of the reticle R is generated on the wafer W by the illumination system 10 and the projection optical system PL, and the sensitive layer (resist layer) on the wafer W is exposed to the illumination light IL to form the pattern on the wafer W.

The local liquid immersion device 8 is provided in correspondence with the exposure device 100 performing exposure by a liquid immersion method. The local immersion device 8 includes a liquid supply device 5, a liquid recovery device 6 (both not shown in fig. 1, see fig. 16), a nozzle unit 32, and the like. As shown in fig. 1, the nozzle unit 32 is suspended and supported by a main holder BD supporting the projection unit PU and the like via a support member (not shown) so as to surround an optical element constituting the most image plane side (wafer W side) of the projection optical system PL, here, the periphery of the lower end portion of a lens barrel 40 holding a lens (hereinafter, also referred to as a "tip lens" or a "final lens") 191. The nozzle unit 32 includes a supply port and a recovery port for the liquid Lq, a lower surface disposed opposite to the wafer W and provided with the recovery port, and a supply flow path and a recovery flow path connected to the liquid supply tube 31A and the liquid recovery tube 31B (both not shown in fig. 1, see fig. 4). The liquid supply pipe 31A is connected to the other end of a supply pipe (not shown) having one end connected to the liquid supply device 5 (not shown in fig. 1, see fig. 16), and the liquid recovery pipe 31B is connected to the other end of a recovery pipe (not shown) having one end connected to the liquid recovery device 6 (not shown in fig. 1, see fig. 16). The nozzle unit 32 has a supply flow path and a recovery flow path therein, and the liquid supply tube 31A and the liquid recovery tube 31B are connected to the supply port and the recovery port via the supply flow path and the recovery flow path, respectively. Further, the nozzle unit 32 has an opening portion on the lower surface thereof through which the illumination light IL emitted from the projection optical system PL passes, and the recovery port is disposed around the opening portion. In the present embodiment, the supply port is provided on the inner surface of the nozzle unit 32 surrounding the front end lens, but a supply port different from the supply port may be provided on the lower surface side of the nozzle unit 32 inside the recovery port with respect to the opening.

In the present embodiment, the main controller 20 controls the liquid supply device 5 (see fig. 16) to supply the liquid between the front lens 191 and the wafer W through the liquid supply tube 31A and the nozzle unit 32, and controls the liquid recovery device 6 (see fig. 16) to recover the liquid from between the front lens 191 and the wafer W through the nozzle unit 32 and the liquid recovery tube 31B. At this time, the main control device 20 controls the liquid supply device 5 and the liquid recovery device 6 so that the amount of the supplied liquid and the amount of the recovered liquid are constantly equal to each other. Therefore, a certain amount of liquid Lq (see fig. 1) is constantly exchanged and held between the front end lens 191 and the wafer W. The local liquid immersion device 8 can form a liquid immersion area under the projection optical system PL by the liquid Lq supplied through the nozzle unit 32, and can form a liquid immersion area by collecting the liquid from the liquid immersion area through the nozzle unit 32, holding the liquid Lq only in a part of the wafer W, that is, in a local area smaller than the surface of the wafer W on the upper surface of the wafer stage WST (fine movement stage WFS) disposed opposite to the projection optical system PL. Therefore, the nozzle unit 32 may also be referred to as a liquid immersion member, a liquid immersion space forming member, a liquid definition member, or the like. In the present embodiment, pure water that transmits ArF excimer laser light (light having a wavelength of 193nm) is used as the liquid. The refractive index n of pure water with respect to ArF excimer laser light is approximately 1.44, and the wavelength of illumination light IL in pure water is shortened to 193nm × 1/n, which is about 134 nm.

In the present embodiment, the nozzle unit 32 is supported by the main support BD in a suspended manner, but the nozzle unit 32 may be provided in a support member different from the main support BD, for example, a support member disposed on the installation surface separately from the main support BD. Thereby, vibration transmitted from the nozzle unit 32 to the projection optical system PL can be suppressed or prevented. Further, a part of nozzle unit 32 that contacts liquid Lq (interface of the liquid immersion area) on the lower surface side of nozzle unit 32 may be made movable, and when wafer stage WST moves, a part of nozzle unit 32 may be moved so that the relative speed between wafer stage WST and nozzle unit 32 is reduced. This can prevent or suppress the liquid Lq from being partially separated from the immersion area and remaining on the upper surface of wafer stage WST or the surface of wafer W particularly during the exposure operation of wafer W. In this case, although a part of nozzle unit 32 may be moved as needed while wafer stage WST is moving, a part of nozzle unit 32 may be moved during a part of the exposure operation, for example, only during the step operation of wafer stage WST. Further, a part of the nozzle unit 32 may be, for example, a movable unit having a recovery port and at least a part of the lower surface, or a plate member movable relative to the nozzle unit 32 and having a lower surface contacting the liquid.

The exposure unit 200 is provided with a 1 st fine movement stage position measurement system 110A including a 1 st backside encoder system 70A having a measurement arm 71A supported in a substantially cantilevered state (near a support end) from the main support BD via a support member 72A, and a 1 st topside encoder system 80A (not shown in fig. 1, see fig. 16, etc.) described later. For the sake of convenience of explanation, the 1 st fine movement stage position measurement system 110A will be explained after a description of a fine movement stage described later is left.

The measurement unit 300 includes: an alignment device 99 provided on the main stand BD, a multipoint focal position detection system (hereinafter simply referred to as a multipoint AF system) (90a,90B) (not shown in fig. 1, see fig. 16, etc.) provided on the main stand BD, and a 2 nd fine movement stage position measurement system 110B including a 2 nd backside encoder system 70B having a measurement arm 71B supported in a substantially cantilevered state (near one support end) from the main stand BD via a support member 72B, and a 2 nd topside encoder system 80B (not shown in fig. 1, see fig. 16, etc.) to be described later. Further, a jig unit 120 is provided near the alignment device 99 as shown in fig. 1. For the sake of convenience of explanation, the 2 nd fine movement stage position measurement system 110B will be explained after the description of the fine movement stage described later is left. The alignment device 99 is also called an alignment detection system, a mark detection system, or the like.

The alignment device 99 comprises five alignment systems AL1, AL2 shown in fig. 4₁～AL2₄. Specifically, as shown in fig. 4 and 5, on a straight line (hereinafter referred to as a reference axis) LV passing through the center of projection unit PU (optical axis AX of projection optical system PL, which coincides with the center of exposure area IA in the present embodiment) and parallel to the Y axis, first alignment system AL1 is disposed in a state where the detection center is located at a predetermined distance from optical axis AX to the-Y side. Second alignment systems AL2 each having a detection center arranged substantially symmetrically with respect to the reference axis LV are provided on one side and the other side in the X-axis direction with the first alignment system AL1 interposed therebetween₁,AL2₂And AL2₃,AL2₄. That is, five alignment systems AL1, AL2₁～AL2₄The detection center is arranged along the X-axis direction. Five alignment systems AL1, AL2₁～AL2₄For example, a Field Image Alignment (FIA) system of an Image processing system may be used, which irradiates a target mark with a wide-band detection beam that does not make a resist on a wafer sensitive, and captures an Image of the target mark formed on a light receiving surface by reflected light from the target mark and an Image of the target mark not shown in the figure by an imaging element (CCD (charge coupled device) or the like)The pointer (the pointer pattern on the pointer board in each alignment system) image, and outputs the shooting signals. From five alignment systems AL1, AL2₁～AL2₄The respective imaging signals are supplied to the main control device 20 (see fig. 16). Further, the detailed structure of the alignment device 99 is disclosed in, for example, U.S. patent application publication No. 2009/0233234. Also, alignment systems AL1, AL2₁～AL2₄Each of (1) is not limited to the photographing method, and may be, for example, a method in which a coherent measurement mask is provided on an alignment mark (diffraction grating) and diffracted light generated from the mark is detected.

As shown in fig. 4 and 5, the multipoint AF system is provided with an oblique incidence type multipoint AF system including a light transmitting system 90a and a light receiving system 90 b. The same structure as the multipoint AF system (90a,90b) is disclosed in, for example, U.S. Pat. No. 5,448,332. In the present embodiment, as an example, the light transmitting system 90a and the light receiving system 90b are arranged symmetrically with respect to the reference axis LV at positions separated by the same distance to the + Y side of a straight line (reference axis) LA parallel to the X axis passing through the detection center of the first alignment system AL 1. The distance between the light-transmitting system 90a and the light-receiving system 90b in the X-axis direction is set to be larger than the pair of scales 39 provided on the wafer table WTB described later₁,39₂The interval (see fig. 2 a) is wide.

A plurality of detection points of a multipoint AF system (90a,90b) are arranged at predetermined intervals in the X-axis direction on a detection surface. In the present embodiment, for example, the detection points are arranged in a row matrix of M rows and columns (M is the total number of detection points) or two rows and N columns (N is 1/2 of the total number of detection points). Fig. 4 and 5 do not show a plurality of detection points to which detection beams are irradiated, respectively, and show an elongated detection area AF extending in the X-axis direction between the light transmitting system 90a and the light receiving system 90 b. Since the length of the detection area AF in the X axis direction is set to be approximately equal to the diameter of the wafer W, the substantially entire Z axis direction position information (information) of the wafer W can be measured by scanning the wafer W only once in the Y axis direction. The detection area AF is arranged in the Y-axis direction between the projection optical system PL (exposure area IA) and the alignment system (AL1, AL 2)₁,AL2₂,AL2₃,AL2₄) The detection operation can be performed by the multi-spot AF system and the alignment system at the same time.

In addition, although the plurality of detecting points are arranged in 1 row, M columns or 2 rows, N columns, the number of rows and/or columns is not limited thereto. However, when the number of columns is 2 or more, it is preferable that the positions of the detection points in the X-axis direction are different between the different columns. Further, the plurality of detection points are arranged along the X-axis direction, but the present invention is not limited to this, and all or a part of the plurality of detection points may be arranged at different positions in the Y-axis direction. For example, a plurality of detection points may be arranged in a direction intersecting both the X axis and the Y axis. That is, the plurality of detection points may be different in position at least in the X-axis direction. In the present embodiment, the detection beams are irradiated to the plurality of detection points, but the detection beams may be irradiated to the entire detection area AF, for example. Further, the length of the detection area AF in the X-axis direction may not be the same as the diameter of the wafer W.

As is clear from fig. 1 and fig. 2(B), wafer stage WST includes: a coarse movement carrier WCS; and a fine movement stage WFS supported in a non-contact state on coarse movement stage WCS via an actuator (including, for example, at least one of a voice coil motor and an EI coil) and movable relative to coarse movement stage WCS. Although not shown, a tube carrier disposed on a guide surface provided separately to the + X side (or-X side) of chassis 12 is connected to coarse movement stage WCS via a tube integrated with piping and wiring. The tube carrier supplies a force such as electric power (electric current), refrigerant, compressed air, and vacuum to coarse movement stage WCS through a tube. A part of the force (for example, vacuum) supplied to coarse movement stage WCS is supplied to fine movement stage WFS. The tube carrier is driven in the Y-axis direction by main controller 20 via a linear motor or the like following wafer stage WST. The driving of the tube carrier in the Y-axis direction does not need to strictly follow the driving of the wafer stage WST in the Y-axis direction, and may follow within a certain allowable range. In this case, the tube carrier can be driven by a planar motor described later that drives coarse movement stage WCS. The tube carrier may also be referred to as a cable carrier or a follower (follower). Further, wafer stage WST does not necessarily have a coarse/fine movement structure.

Wafer stage WST (coarse movement stage WCS) is driven in the X-axis and Y-axis directions by a predetermined stroke and is driven in the θ z direction slightly by a coarse movement stage drive system 51A (see fig. 16) including a planar motor described later. Fine movement stage WFS is driven in six-degree-of-freedom directions (directions of the X axis, Y axis, Z axis, θ X, θ Y, and θ Z) with respect to coarse movement stage WCS by fine movement stage drive system 52A (see fig. 16) including the above-described actuators. Coarse movement stage WCS may be driven in the six-degree-of-freedom direction by a planar motor described later.

At least positional information in the XY plane (including rotation information in the θ z direction) of wafer stage WST (coarse movement stage WCS) is measured by a wafer stage position measurement system 16A (see fig. 1 and 16) constituted by an interferometer system. Further, position information in the six-degree-of-freedom direction of fine movement stage WFS supported by coarse movement stage WCS located at exposure station 200 is measured by 1 st fine movement stage position measurement system 110A (see fig. 1). Further, wafer stage position measurement system 16A may not be provided. In this case, only the 1 st fine movement stage position measurement system 110A measures the position information of the wafer stage WST in the exposure station 200 in the six-degree-of-freedom direction.

When coarse movement stage WCS is positioned at measurement station 300, the position information of fine movement stage WFS supported by coarse movement stage WCS in the six-degree-of-freedom direction is measured by fine movement stage position measurement system 110B (see fig. 1) 2.

Also, when performing a focus map (described later) in the measurement station 300, the positional information of the fine movement stage WFS is measured by the 3 rd back-side encoder system 70C and the 3 rd top-side encoder system 80C (see fig. 16), which are described later. In the present embodiment, since the detection center of the alignment device 99 and the detection point of the multipoint AF system are different in position in the Y direction as described above, the 3 rd backside encoder system 70C and the 3 rd topside encoder system 80C are separately provided from the 2 nd fine movement stage position measurement system 110B. Therefore, in the mark detection of wafer W or the like by alignment device 99, the positional information of wafer stage WST can be measured at the position substantially identical to the detection center of alignment device 99 in at least the Y direction by 2 nd fine movement stage position measurement system 110B, and the positional information of wafer stage WST can be measured at the position substantially identical to the detection point of the multi-spot AF system in at least the Y direction by 3 rd backside encoder system 70C and 3 rd topside encoder system 80C in the measurement of the positional information in the Z direction of wafer W or the like by the multi-spot AF system.

In addition, when the positions of the detection center of the alignment device 99 and the detection point of the multi-point AF system in the Y direction are substantially the same or the interval in the Y direction is small, the 3 rd backside encoder system 70C and the 3 rd topside encoder system 80C may not be provided. In this case, it is sufficient to measure the positional information of wafer stage WST using 2 nd fine movement stage position measurement system 110B also in the measurement operation of the multipoint AF system. Even if the detection center of alignment device 99 and the detection point of the multipoint AF system are different in position in the Y direction, when only 2 nd fine movement stage position measurement system 110B is used without providing 3 rd backside encoder system 70C and 3 rd topside encoder system 80C, 2 nd fine movement stage position measurement system 110B may be arranged so that the position information of wafer stage WST, for example, can be measured at the center between the detection center of alignment device 99 and the detection point of the multipoint AF system in the Y direction.

Further, the positional information of the fine movement stage WFS between the exposure station 200 and the measurement station 300, that is, between the 1 st fine movement stage position measurement system 110A and the 2 nd fine movement stage position measurement system 110B is measured by the 4 th top encoder system 80D (see fig. 16) described later. In addition, in a range where 1 st and 2 nd fine movement stage position measurement systems 110A and 110B cannot measure the position information of wafer stage WST, that is, outside the above-described measurement range, the measurement device that measures the position information of wafer stage WST is not limited to 4 th topside encoder system 80D, and other measurement devices such as an interferometer system, an encoder system that detects a direction and/or constitutes a different structure from 4 th topside encoder system 80D, or the like may be used.

Position information in the XY plane of measurement stage MST is measured by measurement stage position measurement system 16B (see fig. 1 and 16) constituted by an interferometer system. The measuring device for measuring the positional information of measurement stage MST is not limited to the interferometer system, and other measuring devices such as an encoder system (including a 5 th top side encoder system and the like described later) may be used.

The measurement values (position information) of wafer stage position measurement system 16A, measurement stage position measurement system 16B, and top-side-4-encoder system 80D are supplied to main controller 20 for position control of coarse movement stage WCS, measurement stage MST, and fine movement stage WFS, respectively (see fig. 16). The measurement results of 1 st and 2 nd fine movement stage position measurement systems 110A and 110B, and 3 rd backside encoder system 70C and 3 rd topside encoder system 80C are supplied to main control device 20 via switching units 150A to 150C (see fig. 16) described later, respectively, for position control of coarse movement stage WCS, measurement stage MST, and fine movement stage WFS.

Here, the configuration and the like of the stage system including the various measurement systems described above will be described in detail. First, wafer stage WST will be described.

Coarse movement stage WCS includes, as shown in fig. 2(B), a coarse movement slider portion 91, a pair of side wall portions 92a and 92B, and a pair of fixing portions 93a and 93B. The rough slider portion 91 is formed of a rectangular plate-like member having a length in the X-axis direction slightly longer than that in the Y-axis direction in a plan view (viewed from the + Z direction). The pair of side wall portions 92a, 92b are each formed of a rectangular plate-like member having a longitudinal direction in the Y-axis direction, and are fixed to the upper surfaces of one end portion and the other end portion in the longitudinal direction of the rough slider portion 91 in a state parallel to the YZ plane. The pair of fixing members 93a and 93b are fixed inwardly to the center portions in the Y axis direction of the upper surfaces of the side wall portions 92a and 92b, respectively. Coarse movement stage WCS is entirely a rectangular parallelepiped shape having an upper surface with openings at the center in the X axis direction and both side surfaces in the Y axis direction and having a low height. That is, a space portion penetrating in the Y axis direction is formed inside coarse movement stage WCS. The measurement arms 71A and 71B are inserted into the space during exposure, alignment, and the like, which will be described later. The length of the side wall portions 92a and 92b in the Y axis direction may be substantially the same as the length of the fixing portions 93a and 93 b. That is, the side wall portions 92a and 92b may be provided only at the center portion in the Y axis direction of the upper surface of the one end portion and the other end portion in the longitudinal direction of the rough slide portion 91. Coarse movement stage WCS may be referred to as a main body, a movable body, or the like of wafer stage WST as long as it can move while supporting fine movement stage WFS.

Inside the chassis 12, as shown in fig. 1, a coil unit including a plurality of coils 17 arranged in a matrix shape with the XY two-dimensional direction as the row direction and the column direction is housed. Further, the chassis 12 is disposed below the projection optical system PL such that the surface thereof is substantially parallel to the XY plane.

As shown in fig. 2(B), a magnet unit including a plurality of permanent magnets 18 arranged in a matrix form in the row direction and the column direction in the XY two-dimensional direction is provided on the bottom surface of coarse movement stage WCS, that is, the bottom surface of coarse movement slider portion 91, corresponding to the coil unit. The magnet unit and the coil unit of the base plate 12 together constitute a coarse movement stage drive system 51A (see fig. 16) constituted by a planar motor of an electromagnetic force (lorentz force) drive system disclosed in, for example, U.S. Pat. No. 5,196,745. The magnitude and direction of the current supplied to each coil 17 constituting the coil unit are controlled by the main control device 20.

A plurality of air bearings 94 are fixed to the bottom surface of the rough slider portion 91 around the magnet units. Coarse movement stage WCS is supported by floating above chassis 12 through a predetermined gap (gap) such as a gap of several μm by a plurality of air bearings 94, and is driven in the X-axis direction, the Y-axis direction, and the θ z direction by coarse movement stage drive system 51A.

Further, coarse movement stage drive system 51A is not limited to a planar motor of an electromagnetic force (lorentz force) drive system, and a planar motor of a variable magnetic resistance drive system, for example, may be used. Coarse movement stage drive system 51A may be configured by a magnetic levitation type planar motor, and coarse movement stage WCS may be driven in the six-degree-of-freedom direction by the planar motor. In this case, the air bearing may not be provided on the bottom surface of the rough slider portion 91.

Each of the pair of fixing portions 93a and 93b is formed of a plate-like member, and coil units CUa and CUb each formed of a plurality of coils for driving fine movement stage WFS are housed therein. The magnitude and direction of the current supplied to each coil constituting the coil units CUa, CUb are controlled by the main control device 20.

Fine movement stage WFS includes, as shown in fig. 2(B), a main body 81, a pair of movable parts 82a and 82B fixed to one end and the other end of main body 81 in the longitudinal direction, respectively, and a wafer table WTB formed of a planar rectangular plate-shaped member integrally fixed to the upper surface of main body 81.

The main body 81 is formed of an octagonal plate-like member whose longitudinal direction is the X-axis direction in a plan view. A scale plate 83 formed of an octagonal plate-shaped member having a predetermined shape, for example, a rectangular shape in plan view or a one-step larger size than the main body 81, and having a predetermined thickness is horizontally (parallel to the surface of the wafer W) arranged and fixed on the lower surface of the main body 81. A two-dimensional grating (hereinafter simply referred to as "grating") RG is provided below the scale plate 83 in a region at least one turn larger than the wafer W. The grating RG includes a reflection type diffraction grating (X diffraction grating) having an X-axis direction as a periodic direction and a reflection type diffraction grating (Y diffraction grating) having a Y-axis direction as a periodic direction. The pitch of the grid lines of the X-diffraction lattice and the Y-diffraction lattice is set to, for example, 1 μm.

The body portion 81 and the scale plate 83 are preferably formed of a material having the same or similar thermal expansion rate, for example, which is preferably a low thermal expansion rate. The surface of the grating RG may be covered with a protective member such as a cover glass made of a transparent material that transmits light and has a low thermal expansion coefficient. The grating RG may have any configuration as long as it is periodically arranged in two different directions, and the periodic direction may not coincide with the X, Y direction, for example, the periodic direction may be rotated 45 degrees with respect to the X, Y direction.

In the present embodiment, fine movement stage WFS has main body 81 and wafer table WTB, but wafer table WTB may be driven by the above-described actuator without providing main body 81. Fine movement stage WFS may have a mounting area for wafer W on a part of its upper surface, and may be referred to as a holding portion, a stage, a movable portion, and the like of wafer stage WST.

The pair of movable element portions 82a and 82b have YZ cross-sectional rectangular frame-shaped housings fixed to one end surface and the other end surface of the main body portion 81 in the X axis direction, respectively. Hereinafter, for the sake of convenience of explanation, the housings are denoted by the same reference numerals as those of the movable element portions 82a and 82b as the housings 82a and 82 b.

The housing 82a has a space (opening) having a Y-axis direction dimension (length) and a Z-axis direction dimension (height) that are slightly larger than the fixing member 93a and are elongated in the Y-axis direction, and a YZ cross section that is rectangular. the-X side end of fixing part 93a of coarse movement stage WCS is inserted in a space of case 82a in a non-contact manner. On the upper wall 82a of the housing 82a₁And a bottom wall 82a₂Is internally provided with a magnet unit MUa₁、MUa₂。

The movable element portion 82b is symmetrical to the movable element portion 82a in the left-right direction, but has the same configuration. The + X side end of fixing part 93b of coarse movement stage WCS is inserted in a space of case (movable part) 82b in a non-contact manner. On the upper wall 82b of the housing 82b₁And a bottom wall 82b₂Is internally provided with a magnet unit MUa₁、MUa₂Magnet unit MUb of the same configuration₁、MUb₂。

The coil units CUa and CUb correspond to the magnet units MUa respectively₁、MUa₂And MUb₁、MUb₂Are housed inside the fixing portions 93a and 93b, respectively.

Magnet unit MUa₁、MUa₂And MUb₁、MUb₂And the structures of the coil units CUa and CUb are disclosed in detail in, for example, U.S. patent application publication No. 2010/0073652 and U.S. patent application publication No. 2010/0073653.

In the present embodiment, the magnet unit includes a pair of magnet units MUa of the movable element 82a₁、MUa₂And the coil unit CUa of the fixed member 93a and the movable member 82bA pair of magnet units MUb₁、MUb₂And coil unit CUb included in fixing unit 93b constitute fine movement stage drive system 52A (see fig. 16) for supporting fine movement stage WFS in a non-contact state in a floating manner with respect to coarse movement stage WCS and driving fine movement stage WFS in a six-degree-of-freedom direction in a non-contact manner, similarly to the above-described specification of U.S. patent application publication No. 2010/0073652 and U.S. patent application publication No. 2010/0073653.

In the case where a magnetic levitation type planar motor is used as coarse movement stage drive system 51A (see fig. 16), fine movement stage WFS and coarse movement stage WCS can be integrally and finely driven in the respective directions of Z axis, θ X, and θ Y by this planar motor, and therefore fine movement stage drive system 52A may be configured to be able to drive fine movement stage WFS in the respective directions of X axis, Y axis, and θ Z, that is, in the three-degree-of-freedom direction within the XY plane. For example, a pair of electromagnets may be provided to face each other at an octagonal slanting portion of fine movement stage WFS in each of a pair of side wall portions 92a and 92b of coarse movement stage WCS, and a magnetic member may be provided to fine movement stage WFS to face each electromagnet. Accordingly, since the fine movement stage WFS can be driven in the XY plane by the magnetic force of the electromagnet, the movable parts 82a and 82b and the fixed parts 93a and 93b can also constitute a pair of Y-axis linear motors.

A wafer holder (not shown) for holding the wafer W by vacuum suction or the like is provided at the center of the upper surface of the wafer table WTB. The wafer holder may be formed integrally with wafer table WTB, or may be fixed to wafer table WTB by, for example, an electrostatic chuck mechanism, a clamp mechanism, or the like, or by adhesion. Although not shown in fig. 2B, the main body 81 is provided with a plurality of, for example, three vertical pins 140 (see fig. 6 a) that can move vertically through holes provided in the wafer table WTB and the wafer holder. Three vertical moving pins 140 are vertically movable between a 1 st position where the upper end surface is located above the upper surface of wafer holder (wafer table WTB) and a 2 nd position located below the upper surface of wafer holder (wafer table WTB). The three vertical moving pins 140 are driven by the main control device 20 via an actuator 142 (see fig. 16).

As shown in fig. 2a, a plate (liquid-repellent plate) 28 having a rectangular outer shape (contour) and a large circular opening formed at the center thereof one turn larger than the wafer holder is attached to the outer side of the wafer holder (the wafer W mounting area) on the wafer table WTB. The sheet 28 is made of, for example, glass or ceramic (e.g., Zerodur (trade name) of seidel corporation), Al₂O₃Or TiC) and applying a liquid-extracting treatment to the liquid Lq on the surface thereof. Specifically, the liquid repellent film is formed by a fluorine resin material such as a fluorine resin material or polytetrafluoroethylene (teflon (registered trademark)), an acrylic resin material, a silicone resin material, or the like. Plate 28 is fixed to the upper surface of wafer table WTB so that the entire surface (or a part thereof) is substantially flush with the surface of wafer W.

Plate 28 has a 1 st liquid repellent region 28a having a rectangular outer shape (outline) located at the center in the X-axis direction of wafer table WTB and having the circular opening formed at the center thereof, and a pair of 2 nd liquid repellent regions 28b located at the + X-side end and the-X-side end of wafer table WTB with this 1 st liquid repellent region 28a in between in the X-axis direction. In the present embodiment, since water is used as the liquid Lq as described above, the 1 st liquid repellent region 28a and the 2 nd liquid repellent region 28b are hereinafter also referred to as a 1 st water repellent plate 28a and a 2 nd water repellent plate 28b, respectively.

A measuring plate 30 is provided near the + Y side end of the 1 st water paddle 28 a. A reference mark FM is provided at the center of the measurement plate 30, and a pair of aerial image measurement slit patterns (slit-shaped measurement patterns) SL are provided so as to sandwich the reference mark FM. Further, corresponding to each aerial image measurement slit pattern SL, a light transmission system (not shown) is provided for guiding illumination light IL transmitted through the pattern to the outside of wafer stage WST (a light reception system provided on measurement stage MST described later). Measurement plate 30 is disposed in an opening of plate 28 different from the opening in which the wafer holder is disposed, for example, and the gap between measurement plate 30 and plate 28 is sealed by a sealing member or the like to prevent liquid from flowing into wafer table WTB. Further, measurement plate 30 is disposed on wafer table WTB so that its surface is substantially flush with the surface of plate 28. Further, at least one opening (light transmission section) different from the slit pattern SL may be formed in the measurement plate 30, and the illumination light IL passing through the projection optical system PL and the liquid transmission opening may be detected by a sensor, so that, for example, the optical characteristics (including wavefront aberration and the like) of the projection optical system PL and/or the characteristics (including the light quantity, the illuminance distribution in the exposure area IA and the like) of the illumination light IL can be measured.

The 2 nd water-repellent plate 28b is provided with a scale 39 for the 1 st to 4 th top encoder systems 80A to 80D, respectively₁,39₂. In detail, the scale 39₁,39₂Each of which is composed of a reflection type two-dimensional diffraction grating in which a diffraction grating having a periodic direction in the Y-axis direction and a diffraction grating having a periodic direction in the X-axis direction are combined, for example. The lattice line pitch of the two-dimensional diffraction grating is set to, for example, 1 μm in both the Y-axis direction and the X-axis direction. In addition, since the pair of 2 nd water-repellent plates 28b have scales (two-dimensional lattices) 39, respectively₁,39₂Therefore, the liquid crystal display device is referred to as a grid member, a scale plate, a mesh plate, or the like, and in the present embodiment, for example, a two-dimensional grid is formed on the surface of a glass plate having a low thermal expansion coefficient, and a liquid repellent film is formed so as to cover the two-dimensional grid. In fig. 2(a), for convenience of illustration, the pitch of the grid is illustrated to be larger than the actual pitch. The same applies to the other figures. The two-dimensional lattice may have any configuration as long as it is periodically arranged in two different directions, and the periodic direction may not coincide with the X, Y direction, and for example, the periodic direction may be rotated 45 degrees with respect to the X, Y direction.

In addition, in order to protect the diffraction grating of the pair of 2 nd water-repellent plates 28b, it is also effective to cover the diffraction grating with a glass plate having a low thermal expansion coefficient and water repellency. Here, a glass plate having a thickness of about the same as that of the wafer, for example, a thickness of 1mm can be used as the glass plate, and for example, the glass plate surface and the wafer surface are provided on wafer table WTB so as to have substantially the same height (the same plane). In addition, when the pair of 2 nd water repellent plates 28b are separated from the wafer W at least during the exposure operation of the wafer W to such an extent that they do not come into contact with the liquid in the liquid immersion area, the surfaces of the pair of 2 nd water repellent plates 28b may not be liquid repellent. That is, each of the pair of 2 nd water-repellent plates 28b may be a simple lattice member in which a scale (two-dimensional lattice) is formed.

In the present embodiment, the plate 28 is provided on the wafer table WTB, but the plate 28 may not be provided. In this case, a recess for disposing the wafer holder may be provided on the upper surface of wafer table WTB, and for example, a pair of grid members having a non-liquid repellent surface may be disposed on wafer table WTB with a recess in the X direction. As described above, the pair of grid members may be disposed apart from the concave portion to such an extent that the grid members do not contact the liquid in the liquid immersion area. The recess may be formed such that the surface of the wafer W held by the wafer holder in the recess is substantially flush with the upper surface of the wafer table WTB. In addition, the entire or a part of the upper surface of wafer table WTB (including at least the peripheral region surrounding the concave portion) may be made liquid repellent. A scale (two-dimensional lattice) 39 is formed₁,39₂When the pair of grid members are arranged close to the concave portion, the pair of 2 nd water repellent plates 28b may be used instead of the pair of grid members having a non-liquid repellent surface.

In the vicinity of the scale end of each 2 nd water paddle 28b, a positioning pattern, not shown, for determining a relative position between an encoder head and a scale, which will be described later, is provided. The positioning pattern is composed of, for example, lattice lines having different reflectances, and when the encoder head scans the positioning pattern, the intensity of the output signal of the encoder changes. Therefore, a threshold value is determined in advance, and a position where the intensity of the output signal exceeds the threshold value is detected. The relative position between the encoder head and the scale is set based on the detected position. In addition, as described above, in the present embodiment, fine movement stage WFS includes wafer table WTB, and therefore fine movement stage WFS including wafer table WTB is also referred to as wafer table WTB in the following description.

Next, although the front and rear are explained, the gripper unit 120 will be explained. The chuck unit 120 is configured to hold the wafer before exposure above the loading position before being loaded on the wafer table WTB, and to be loaded on the wafer table WTB.

As shown in fig. 1, the jig unit 120 includes a driving unit 122 fixed to the lower surface of the main support BD via a vibration-proof member, not shown, and a jig main body 130 vertically moved by the driving unit 122. Fig. 6(a) schematically shows a front view (view viewed from the-Y direction) of the gripper unit 120, and fig. 6(B) schematically shows a plan view of the gripper unit 120. The driving unit 122 incorporates a motor, and drives the jig main body 130 in the vertical direction (Z-axis direction) via a vertical shaft 122a as shown in fig. 6 a.

The jig main body 130 includes a cooling plate 123 formed of a plate-shaped member having a predetermined thickness in a plan view and fixed to the upper surface thereof at the lower end of the vertical moving shaft 122a, and a bernoulli jig (also referred to as a floating jig) 124 fixed to the lower surface of the cooling plate 123 at the upper surface thereof.

The cooling plate 123 adjusts the wafer temperature to a predetermined temperature, and for example, a pipe or the like is provided therein, and a liquid whose temperature is adjusted to a predetermined temperature is flowed through the pipe to adjust the temperature to a predetermined temperature. A pair of guide portions 125 are provided at both ends of the cooling plate 123 in the X axis direction. A guide hole 125a formed of a through hole penetrating in the vertical direction is formed in each of the pair of guides 125.

The shafts 126 extending in the vertical direction are inserted into guide holes 125a formed in the pair of guide portions 125 with a predetermined gap therebetween. The upper end of the shaft 126 is exposed above the guide 125 and is connected to the vertical movement/rotation driving unit 127. The vertical movement rotation driving portion 127 is attached to the main stand BD via an attachment member not shown. The lower end of the shaft 126 is exposed below the guide 125, and a support plate 128 extending in one axial direction (in fig. 6a, in the X-axis direction) in the XY plane is fixed to the lower end surface thereof. In order to prevent the generation of dust, non-contact bearings such as air bearings are preferably disposed at a plurality of positions on the inner circumferential surface of the guide hole 125 a. The upper surface of the support plate 128 near one end in the longitudinal direction is fixed to the shaft 126. The support plate 128 is driven to rotate in the θ z direction between the 1 st rotational position where the other end in the longitudinal direction faces a part of the outer peripheral portion of the bernoulli chuck 124 and the 2 nd rotational position where the other end in the longitudinal direction does not face the bernoulli chuck 124, and is also driven in the vertical direction with a predetermined stroke by vertically moving the rotational driving portion 127.

The other guide 125 is also provided with a vertical movement/rotation driving unit 127, a shaft 126, and a support plate 128, in the same arrangement as described above.

The bernoulli chuck 124 is a plate-like member that is substantially thinner than the cooling plate 123 and has substantially the same size as the cooling plate 123. Imaging elements 129 such as a CCD (only one of the imaging elements is representatively shown in fig. 6 a) are mounted in an embedded state on three positions on the outer peripheral surface of the bernoulli chuck 124. One of the three imaging elements 129 is disposed at a position facing a notch (V-shaped notch, not shown) of the wafer W in a state where the center of the wafer W substantially coincides with the center of the bernoulli chuck 124, and the remaining two imaging elements 129 are disposed at positions facing a part of the wafer W in a state where the center of the wafer W substantially coincides with the center of the bernoulli chuck 124. The bernoulli chuck 124 is provided with a gap sensor, not shown, for example, a capacitance sensor, and an output thereof is supplied to the main controller 20.

As is well known, a bernoulli chuck is a chuck that fixes (hereinafter, referred to as supporting, holding, or adsorbing, as appropriate) an object in a non-contact manner by locally increasing the flow velocity of a blown fluid (for example, air) by using a bernoulli effect. The bernoulli effect is an effect of a fluid machine or the like caused by the bernoulli theorem (principle) in which the pressure of a flow velocity decreases as the flow velocity increases. In the bernoulli chuck, the holding state (adsorption/levitation state) is determined by the weight of the adsorption (fixation) object and the flow rate of the fluid blown out from the chuck. That is, when the size of the object is known, the size of the gap between the jig and the object to be held at the time of holding is determined based on the flow velocity of the fluid blown out from the jig. In the present embodiment, the bernoulli gripper 124 is used for sucking (supporting or holding) the wafer (W). The wafer is sucked and held by the bernoulli chuck 124 to restrict the movement in the Z-axis direction, the θ X direction, and the θ Y direction, and in a state sucked (supported or held) by the bernoulli chuck 124, two positions near the outer peripheral portion of the lower surface (back surface) are supported by the pair of support plates 128 from below in contact with each other to restrict the movement in the X-axis direction, the Y-axis direction, and the θ Z direction by a frictional force.

In addition, not only the holder using the bernoulli effect but also a holder which can support the wafer without contact without using the bernoulli effect can be used. In the present embodiment, these jigs are referred to as (collectively) bernoulli jigs.

The imaging signal of the imaging element 129 is sent to the signal processing system 116 (see fig. 16), and the signal processing system 116 detects three positions including the peripheral edge of the notch (notch or the like) of the wafer by a method disclosed in, for example, U.S. patent specification No. 6,624,433, and obtains the positional displacement and the rotation (θ z rotation) error of the wafer W in the X-axis direction and the Y-axis direction. Then, the information of the position error and the rotation error is supplied to the main controller 20 (see fig. 16). In the present embodiment, three imaging elements 129 are used as the pre-alignment device for measuring the position of the wafer W held by the bernoulli chuck 124, but the pre-alignment device is not limited to the imaging elements, and other sensors such as a light quantity sensor may be used. Further, although the prealignment device is provided in the bernoulli chuck 124, only one of the light emitting unit and the light receiving unit constituting the prealignment device may be provided in the bernoulli chuck 124, and the other may be provided in the wafer stage WST, the main holder BD, or the like. Further, at least a part of the light emitting section and the light receiving section, for example, a light source and/or a sensor (detector) may be disposed at other positions, for example, a body holder, instead of the bernoulli chuck 124.

The drive unit 122, the bernoulli gripper 124, the pair of vertical movement/rotation drive units 127, and the like of the gripper unit 120 are controlled by the main control device 20 (see fig. 16). Various operations performed by the main control device 20 using the gripper unit 120 will be described later.

Next, the measurement stage MST is explained. Fig. 3a, 3B, and 3C show a front view (view from the-Y direction), a side view (view from the-X direction), and a top view (view from the + Z direction) of measurement stage MST, respectively. As shown in fig. 3a to 3C, measurement stage MST includes a rectangular plate-shaped slider portion 60 whose longitudinal direction is the X-axis direction in a plan view (as viewed from the + Z direction), a support portion 62 composed of a rectangular solid member fixed to the + X-side end portion of the upper surface of slider portion 60, and a rectangular plate-shaped measurement table MTB which is cantilever-supported by support portion 62 and is driven in a six-degree-of-freedom direction (or three-degree-of-freedom direction in the XY plane) in a minute manner via a measurement table drive system 52B (see fig. 16), for example.

Although not shown, a magnet unit including a plurality of permanent magnets is provided on the bottom surface of the slider portion 60, and the magnet unit and the coil unit (coil 17) of the base plate 12 constitute a measurement stage drive system 51B (see fig. 16) including a planar motor of an electromagnetic force (lorentz force) drive system. A plurality of air bearings (not shown) are fixed to the bottom surface of the slider portion 60 around the magnet units. The measurement stage MST is supported by the air bearing above the base plate 12 in a floating manner with a predetermined gap (gap), for example, a gap of several μm, and is driven in the X-axis direction and the Y-axis direction by the measurement stage drive system 51B. Although the coil units are common to coarse movement stage drive system 51A and measurement stage drive system 51B, in the present embodiment, for convenience of explanation, the coil units are divided into coarse movement stage drive system 51A and measurement stage drive system 51B. Even in terms of practical problems, since different coils 17 of the coil unit are used for driving wafer stage WST and measurement stage MST, respectively, there is no problem even if such division is made. Further, although the measurement stage MST is of an air levitation type, for example, a magnetic levitation type using a planar motor may be used.

The measurement table MTB is provided with various measurement members. As the measuring means, for example, as shown in fig. 3C, an illuminance unevenness sensor 95 having a pinhole-shaped light receiving unit for receiving the illumination light IL on the image plane of the projection optical system PL, an aerial image measuring instrument 96 for measuring a pattern aerial image (projection image) projected by the projection optical system PL, a Shack-Hartman type wavefront aberration measuring instrument 97 disclosed in, for example, international publication No. 03/065428, and an illuminance monitor 98 having a light receiving unit with a predetermined area for receiving the illumination light IL on the image plane of the projection optical system PL are used.

The uneven illuminance sensor 95 may be constructed as disclosed in U.S. patent No. 4,465,368, for example. The aerial image measuring instrument 96 can be constructed as disclosed in, for example, U.S. patent application publication No. 2002/0041377. For the wavefront aberration sensor 97, for example, one disclosed in International publication No. 99/60361 (corresponding to European patent No. 1079223) can be used. The illuminance monitor 98 can be constructed as disclosed in, for example, U.S. patent application publication No. 2002/0061469.

Further, a pair of light receiving systems (not shown) is provided on the measurement table MTB so as to be capable of facing the pair of light transmitting systems (not shown). In the present embodiment, aerial image measuring apparatus 45 (see fig. 16) is configured to guide illumination light IL transmitted through each aerial image measuring slit pattern SL of measurement plate 30 on wafer stage WST to each light transmitting system (not shown) and receive the light by the light receiving elements of each light receiving system (not shown) in measurement stage MST in a state (including a contact state) where wafer stage WST and measurement stage MST are close to each other within a predetermined distance in the Y-axis direction.

In the present embodiment, four measuring members (95,96,97,98) are provided on the measuring table MTB, but the type, number, and the like of the measuring members are not limited thereto. As the measuring means, for example, a transmittance measuring instrument for measuring the transmittance of the projection optical system PL, and/or a measuring instrument for observing the local immersion device 8, for example, the nozzle unit 32 (or the distal end lens 191), or the like can be used. Further, members different from the measuring members, for example, cleaning members for cleaning the nozzle unit 32, the tip lens 191, and the like, may be mounted on the measurement stage MST.

In the present embodiment, in response to the immersion exposure performed to expose the wafer W with the exposure light (illumination light) IL through the projection optical system PL and the liquid (water) Lq, the illumination unevenness sensor 95, the aerial image measuring instrument 96, the wavefront aberration sensor 97, and the illumination monitor 98, which are used for the measurement of the illumination light IL, receive the illumination light IL through the projection optical system PL and the water. Further, each sensor may be disposed on the measurement table MTB only in a part of a light receiving surface (light receiving portion) and an optical system for receiving the illumination light IL through the projection optical system PL and water, or may be disposed on the measurement table MTB as a whole.

A plate 63 made of a transparent member whose surface is covered with a liquid repellent film (water repellent film) is fixed to the upper surface of the measurement table MTB. The plate member 63 is formed of the same material as the plate member 28 described above. The grating RGa similar to the grating RG described above is provided below (surface on the Z side) the measurement table MTB.

When the measurement stage drive system 51B is configured by a magnetic levitation type planar motor, the measurement stage may be a single stage movable in a six-degree-of-freedom direction, for example. Further, the plate 63 may not be provided on the measurement table MTB. In this case, a plurality of openings in which light receiving surfaces (light transmitting portions) of the plurality of sensors are arranged are formed on the upper surface of measurement table MTB, and at least a part of the sensors including the light receiving surfaces may be provided on measurement table MTB so that the light receiving surfaces are substantially flush with the upper surface of measurement table MTB in the openings.

Positional information in the XY plane of measurement stage MST is measured by main controller 20 using measurement stage position measurement system 16B (see fig. 1 and 16) composed of the same interferometer system as wafer stage position measurement system 16A.

Measurement stage MST can be engaged with measurement arm 71A from the-X side, and in this engaged state, measurement table MTB is positioned immediately above measurement arm 71A. At this time, the positional information of the measurement table MTB is measured by a plurality of encoder heads of the measurement arm 71A described later which irradiate the grating RGa with the measurement beam.

Measurement table MTB can approach wafer table WTB (fine movement stage WFS) supported by coarse movement stage WCS from the + Y side to a distance of, for example, about 300 μm or less or make contact therewith, and in this approach or contact state, is a completely flat surface that is integrated with the top surface of wafer table WTB in appearance (see, for example, fig. 27). Measurement table MTB (measurement stage MST) is driven by main controller 20 via measurement stage drive system 51B, and transfers the liquid immersion area (liquid Lq) to wafer table WTB. That is, a part of the boundary (boundary) defining the liquid immersion area formed under projection optical system PL is replaced from one of the upper surface of wafer table WTB and the upper surface of measurement table MTB to the other. The transfer of the liquid immersion area (liquid Lq) between measurement table MTB and wafer table WTB is described below.

Next, the configuration of the 1 st fine movement stage position measurement system 110A (see fig. 16) for measuring the position information of the fine movement stage WFS movably held by the coarse movement stage WCS located at the exposure station 200 will be described.

As shown in fig. 1, first backside encoder system 70A of first fine movement stage position measurement system 1A includes measurement arm 71A inserted into a space provided inside coarse movement stage WCS in a state where wafer stage WST is arranged below projection optical system PL.

As shown in fig. 7, the measurement arm 71A includes an arm member 71 supported in a cantilever state on the main support BD via a support member 72A₁And is accommodated in the arm member 71₁An encoder head (at least a part of an optical system) described later. That is, by an arm member 71 including a measuring arm 71A₁The measurement member (also referred to as a support member or a metrology arm) of the support member 72A supports the head portion thereof such that the head portion (including at least a part of the optical system) of the 1 st backside encoder system 70A is disposed lower than the grating RG of the wafer table WTB. Thereby, the grating RG is irradiated with the measuring beam of the 1 st backside encoder system 70A from below. Arm member 71₁As shown in fig. 8(a) in an enlarged manner, the hollow columnar member has a rectangular cross section with the Y-axis direction as the longitudinal direction. Arm member 71₁For example, as shown in fig. 19, the dimension in the width direction (X-axis direction) is the widest near the base end, and is tapered from the base end to a position slightly closer to the base end from the center in the longitudinal direction toward the tip end, and is substantially constant from the position slightly closer to the base end from the center in the longitudinal direction toward the tip end. In the present embodiment, the head portion of the 1 st backside encoder system 70A is disposed between the grating RG of the wafer table WTB and the surface of the base plate 12, but may be disposed under the base plate 12, for exampleThe read head is configured.

Arm member 71₁The damper is made of a material having a low thermal expansion coefficient, preferably a 0-expansion material (for example, Zerodur (trade name) of seidel corporation), and as shown in fig. 7, a mass damper (also referred to as a dynamic damper) 69 having a natural resonance frequency of about 100Hz is provided at the tip end thereof. The mass damper is a swing member composed of a spring and a weight, for example, and is attached to a structure (here, the arm member 71) from the outside₁) When vibration is applied, the weight resonates and vibrates instead of the absorbing structure (here, the arm member 71) as long as the vibration frequency is the same as that of the mass damper₁) The vibration energy of (2). Thereby, the structure (here, the arm member 71) can be fixed₁) Is suppressed to be small. Further, the arm member 71 may be suppressed or prevented by a vibration suppressing member other than the mass damper₁The vibration of (2). Further, the vibration suppressing member is a compensation factor arm member 71₁The 1 st backside encoder system 70A, and the 1 st topside encoder system 80A, which will be described later, are also one of the compensation devices.

Arm member 71₁Hollow and having a wide base end portion, and therefore high in rigidity, and the shape in plan view is set as described above, so that arm member 71 is disposed under projection optical system PL in a state where wafer stage WST is disposed below wafer stage WST₁In the state where the tip end portion of (b) is inserted into the space portion of coarse movement stage WCS, although wafer stage WST moves, it is possible to prevent movement of wafer stage WST from being hindered at this time. Optical fibers on the light transmitting side (light source side) and the light receiving side (detector side) for transmitting light (measuring beam) to and from an encoder head (described later) pass through the arm member 71₁In the hollow portion of (a). Further, the arm member 71₁For example, only the portion through which the optical fiber or the like passes may be hollow, and the other portion may be formed of a hollow member.

As described above, arm member 71 of measurement arm 71A is disposed below projection optical system PL in a state where wafer stage WST is disposed below projection optical system PL₁The tip end portion is inserted into the space portion of coarse movement stage WCS as shown in FIG. 1 and FIG. 1As shown in fig. 7, the upper surface thereof faces a grating RG (not shown in fig. 1 and 7, see fig. 2B, etc.) provided on the lower surface of the fine movement stage WFS (more precisely, the lower surface of the main body 81). Arm member 71₁The upper surface of (1) is arranged substantially parallel to the lower surface of fine movement stage WFS with a predetermined gap (clearance), for example, a gap of several mm or so, formed between the upper surface and the lower surface of fine movement stage WFS.

As shown in fig. 17, the 1 st backside encoder system 70A includes a pair of three-dimensional encoders 73a and 73b that measure the positions of the fine movement stage WFS in the X-axis, Y-axis, and Z-axis directions, respectively, an XZ encoder 73c that measures the positions of the fine movement stage WFS in the X-axis and Z-axis directions, and a YZ encoder 73d that measures the positions of the fine movement stage WFS in the Y-axis and Z-axis directions.

Each of the XZ encoder 73c and the YZ encoder 73d includes an arm member 71 housed in the measurement arm 71A₁The two-dimensional head having the X-axis and Z-axis directions as the measurement directions and the two-dimensional head having the Y-axis and Z-axis directions as the measurement directions are provided inside. For convenience of explanation, the two-dimensional heads provided in the XZ encoder 73c and the YZ encoder 73d are denoted as the XZ head 73c and the YZ head 73d by the same reference numerals as those of the encoders. For each of the XZ head 73c and the YZ head 73d, an encoder head (hereinafter, appropriately referred to simply as a head) having the same configuration as that of the displacement measuring head disclosed in, for example, U.S. patent No. 7,561,280 can be used. The pair of three-dimensional encoders 73a and 73b includes an arm member 71 housed in the measurement arm 71A, respectively₁And a three-dimensional reading head which is arranged inside and takes the X-axis direction, the Y-axis direction and the Z-axis direction as the measuring direction. Hereinafter, for convenience of explanation, the three-dimensional heads provided in the three-dimensional encoders 73a and 73b are denoted by the three-dimensional heads 73a and 73b using the same reference numerals as those of the encoders. As the three-dimensional heads 73a and 73b, for example, a three-dimensional head can be used which is configured such that the XZ head 73c and the YZ head 73d are combined so that the measurement points (detection points) are the same point and the measurement in the X-axis direction, the Y-axis direction, and the Z-axis direction can be performed.

FIG. 8(A) is a perspective view showing the arm member 71₁Fig. 8(B) shows the arm member 71 viewed from the + Z direction₁Front end portion ofTop plan view of the same. As shown in fig. 8(a) and 8(B), a pair of three-dimensional heads 73a and 73B are disposed on the opposing arm member 71₁Are symmetrically positioned with respect to the center line CL of (a). One of the three-dimensional heads 73a irradiates the grating RG with the measuring beam LBxa from two points (see white circles in fig. 8B) located at equal distances (distance a) from the straight line LY1 (parallel to the Y axis located at a predetermined distance from the center line CL) on the straight line LX1 parallel to the X axis₁、LBxa₂(see FIG. 8A). In three-dimensional head 73a, measuring beam LBya is irradiated on grating RG at two points located at distance a from line LX1 on line LY1₁、LBya₂. Measuring beam LBxa₁、LBxa₂The same point of illumination on the grating RG is irradiated with the measuring beam LBya at that point of illumination₁、LBya₂. In the present embodiment, the measuring beam LBxa₁、LBxa₂And measuring beam LBya₁、LBya₂The irradiation point(s) of three-dimensional head 73a, i.e., the detection point (see symbol DP1 in fig. 8B), coincides with the center of irradiation region (exposure region) IA of illumination light IL irradiated onto wafer W, i.e., the exposure position (see fig. 1). Here, the straight line LY1 coincides with the reference axis LV described above.

In the three-dimensional head 73B, the measurement beam LBxb is irradiated onto the grating RG from two points (white circles in fig. 8B) at which the straight line LX1 is located at a distance a from the straight line LY2 (symmetrical to the straight line LY with respect to the center line CL)₁、LBxb₂(see white circles in FIG. 8B). In the three-dimensional head 73b, the measurement beam LByb is irradiated onto the grating RG at two points located at a distance a from the straight line LX1 on the straight line LY2₁、LByb₂. Measuring beam LBxb₁、LBxb₂The same point of illumination on the grating RG is irradiated with a measuring beam LByb₁、LByb₂. Measuring beam LBxb₁、LBxb₂And measuring beam LByb₁、LByb₂The irradiation point(s) in (B), that is, the detection point of three-dimensional head 73B (see symbol DP2 in fig. 8B) is a point separated by a predetermined distance toward the-X side of the exposure position.

The XZ head 73c is disposed at a position separated by a predetermined distance to the + Y side of the three-dimensional head 73 a. As shown in fig. 8B, the XZ head 73c irradiates the common irradiation point on the grating RG with the measuring beam LBxc shown by the broken line in fig. 8a at two points (see white circles in fig. 8B) located at the distance a from the straight line LY1 on the straight line LY2 (located at the predetermined distance from the straight line LX1 to the + Y side and parallel to the X axis)₁、LBxc₂. Measuring beam LBxc₁、LBxc₂The irradiation point of (B), that is, the detection point of the XZ head 73c is shown by a symbol DP3 in fig. 8 (B).

The YZ head 73d is disposed at a position separated by a predetermined distance from the + Y side of the three-dimensional head 73 b. As shown in fig. 8B, the YZ head 73c irradiates the common irradiation point on the grating RG with the measuring beam LByc shown by a broken line in fig. 8a from two points (see white circles in fig. 8B) arranged on the straight line LY2 and located at a distance a from the straight line LX2₁、LByc₂. Measuring beam LByc₁、LByc₂The irradiation point of (B), that is, the detection point of the YZ head 73d is shown by a symbol DP4 in fig. 8 (B).

In the 1 st backside encoder system 70A, three-dimensional encoders 73a and 73b are respectively configured by a pair of three-dimensional heads 73a and 73b that measure the positions of the fine movement stage WFS in the X-axis, Y-axis, and Z-axis directions using the X-diffraction grating and the Y-diffraction grating of the grating RG, an XZ encoder 73c is configured by an XZ head 73c that measures the positions of the fine movement stage WFS in the X-axis and Z-axis directions using the X-diffraction grating of the grating RG, and a YZ encoder 73d is configured by a YZ head 73d that measures the positions of the fine movement stage WFS in the Y-axis and Z-axis directions using the Y-diffraction grating of the grating RG.

The outputs of the encoders 73a,73b,73c,73d of the 1 st backside encoder system 70A are supplied to the main control device 20 via a switching unit 150A (see fig. 16, 17, and the like) described later.

Here, the measurement of the position of fine movement stage WFS in the six-degree-of-freedom direction and the measurement of the difference between the XYZ grids by main control device 20 using 1 st backside encoder system 70A when the output of 1 st backside encoder system 70A is supplied to main control device 20 via switching unit 150A will be described with reference to fig. 10(a) to 12 (B).

Here, as shown in fig. 10a, the measurement values of the three-dimensional encoders 73a and 73b are (X1, Y1, Z1), (X2, Y2, and Z2), the measurement value of the XZ encoder 73c is (X3 and Z3), and the measurement value of the YZ encoder 73d is (Y3 and Z4), respectively.

In the present embodiment, as shown in fig. 10B, for example, as a full line, X1, Y1, Y2, Z1, and Z3 are used for position measurement of the fine movement stage WFS in six-degree-of-freedom directions (directions of the X axis, the Y axis, the Z axis, θ X, θ Y, and θ Z). Specifically, main control device 20 calculates the positions of fine movement stage WFS in the X, Y, and Z-axis directions using X1, Y1, and Z1, calculates the position of fine movement stage WFS in the θ Z direction using Y1 and Y2, calculates the position of fine movement stage WFS in the θ Y direction using Z1 and Z2, and calculates the position of fine movement stage WFS in the θ X direction using Z1 and Z3.

Here, in the present embodiment, since the detection point DP1 of the three-dimensional head 73a coincides with the exposure position, the positions in the X-axis, Y-axis, and Z-axis directions of the fine movement stage WFS are measured at the detection point DP1, and the positions in the X-axis, Y-axis, and Z-axis directions of the fine movement stage WFS are calculated using X1, Y1, and Z1. Therefore, when the exposure position coincides with, for example, the center point of the detection points DP1, DP2 of the pair of three-dimensional heads 73a,73b, the main controller 20 may determine the positions of the fine movement stage WFS in the X-axis, Y-axis, and Z-axis directions from the average value of X1 and X2, the average value of Y1 and Y2, and the average value of Z1 and Z2.

In parallel with the above-described position measurement of the fine movement stage WFS in the six-degree-of-freedom direction, the main controller 20 performs the following difference measurement to obtain the X, Y, Z grid (grid error) of the coordinate system of the 1 st backside encoder system 70A. That is, the main controller 20 obtains the shift Δ X/X of the X position corresponding to the X grid using X1 and X2 as shown in fig. 10(B) and 11(a), and obtains the shift Δ X/Y of the Y position corresponding to the X grid using X1 and X3 as shown in fig. 10(B) and 11 (B). Thus, a Δ X map shown in fig. 11(C) is obtained.

Similarly, as shown in fig. 10(B), the main controller 20 obtains the Y-position shift Δ Y/Y of the corresponding Y grid using Y2 and Y3, obtains the X-position shift Δ Z/X of the corresponding Z grid using Z3 and Z4, and obtains the Y-position shift Δ Z/Y of the corresponding Z grid using Z2 and Z4. In addition, main controller 20 obtains the shift Δ Y/X of the X position corresponding to the Y grid using Y1 and Y2, but at this time, calculates the position of fine movement stage WFS in the θ z direction using X1 and X3. As a result, Δ Y and Δ Z maps shown in fig. 12(a) and 12(B) are obtained.

The main controller 20 repeats the above-described difference measurement at a predetermined sampling interval in parallel with the position measurement of the fine movement stage WFS in the six-degree-of-freedom direction, and updates the grid error of the coordinate system of the 1 st backside encoder system 70A. This updating of the grid error is hereinafter referred to as a updating of the coordinate system of the 1 st backside encoder system 70A.

Therefore, in the present embodiment, when the pattern of the reticle R is transferred to a plurality of irradiation regions of the wafer W placed on the fine movement stage WFS by using the 1 st backside encoder system 70A, the main controller 20 can perform position information in the XY plane of the fine movement stage WFS immediately below the exposure position (on the back side of the fine movement stage WFS) as needed.

In this case, the optical path lengths of the measuring beams in the air are extremely short and substantially equal in the heads 73a to 73d, and therefore the influence of air fluctuations can be almost ignored. Therefore, the positional information of the fine movement stage WFS in the six-degree-of-freedom direction can be measured with high accuracy by the 1 st backside encoder system 70A. Further, since the detection points on the substantial gratings in the X-axis, Y-axis, and Z-axis directions of the 1 st backside encoder system 70A coincide with the centers of the exposure areas IA (exposure positions), the occurrence of so-called abbe errors can be suppressed to a degree that can be substantially ignored. Therefore, main controller 20 can accurately measure the positions of fine movement stage WFS in the X-axis direction, Y-axis direction, and Z-axis direction by using first backside encoder system 70A without abbe error. Although first backside encoder system 70A may measure only the positional information of wafer table WTB (or wafer stage WST) in the six-degree-of-freedom direction, it is preferable to measure the positional information of wafer table WTB (or wafer stage WST) using at least one measuring beam different from the plurality of measuring beams necessary for the measurement of the positional information in the six-degree-of-freedom direction, as in the present embodiment.

Next, the configuration of the 1 st topside encoder system 80A that constitutes a part of the 1 st fine movement stage position measurement system 110A will be described. The 1 st topside encoder system 80A can measure the position information of the fine movement stage WFS in the six-degree-of-freedom direction in parallel with the 1 st backside encoder system 70A.

In the exposure apparatus 100, as shown in fig. 4, a pair of heads 62A and 62C are disposed on the + X side and the-X side of the projection unit PU (nozzle unit 32), respectively. The head units 62A and 62C include a plurality of heads, respectively, as described later, and these heads are fixed to the main holder BD in a suspended state via a support member (not shown in fig. 4, see fig. 1 and the like).

As shown in fig. 4, the head units 62A and 62C include four-axis heads 65₁～65₄,64₁～64₄. In a four-axis reading head 65₁～65₄As shown in fig. 5, an XZ head 65X having the X-axis and Z-axis directions as the measurement directions is housed in the casing₁～65X₄And a YZ head 65Y having Y-axis and Z-axis directions as measurement directions₁～65Y₄. Similarly, in a four axis readhead 64₁～64₄The housing of (1) accommodates an XZ head 64X₁～64X₄And YZ head 64Y₁～64Y₄. XZ read head 65X₁～65X₄And 64X₁～64X₄And YZ head 65Y₁～65Y₄And 64Y₁～64Y₄For example, an encoder head having the same configuration as that of the displacement measuring sensor head disclosed in U.S. patent No. 7,561,280 can be used.

XZ read head 65X₁～65X₄,64X₁～64X₄(more precisely, XZ head 65X₁～65X₄,64X₁～64X₄Ruler 39 of the emitted measuring beam₁,39₂The above irradiation points) are arranged at a predetermined interval WD on a straight line (hereinafter referred to as a reference axis) LH passing through an optical axis AX of the projection optical system PL (also coinciding with the center of the exposure area IA in the present embodiment) and parallel to the X axis. YZ head 65Y₁～65Y₄,64Y₁～64Y₄(more precisely, YZ head 65Y₁～65Y₄,64Y₁～64Y₄Ruler 39 of the emitted measuring beam₁,39₂Upper irradiation point) is a straight line LH parallel to the reference axis LH and separated from the reference axis LH toward the-Y side by a predetermined distance₁The corresponding XZ head 65X₁～65X₄,64X₁～64X₄The same X position. Hereinafter, the XZ head 65X is read as necessary₁～65X₄,64X₁～64X₄And YZ head 65Y₁～65Y₄,64Y₁～64Y₄Also labeled as XZ read heads 65X,64X and YZ read heads 65Y,64Y, respectively. The reference axis LH coincides with the straight line LX 1.

The heads 62A and 62C are respectively formed using a scale 39₁,39₂An XZ linear encoder for measuring a plurality of eyes (here, four eyes) at the X-axis direction position (X position) and the Z-axis direction position (Z position) of wafer table WTB, and a YZ linear encoder for measuring a plurality of eyes (here, four eyes) at the Y-axis direction position (Y position) and the Z position. For the sake of convenience of explanation, the encoders are denoted by XZ linear encoders 65X,64X and YZ linear encoders 65Y,64Y using the same reference numerals as for the XZ heads 65X,64X and the YZ heads 65Y,64Y, respectively (see fig. 17).

In the present embodiment, an XZ linear encoder 65X and a YZ linear encoder 65Y constitute a four-axis encoder 65 (see fig. 17) for measuring a plurality of (four in this case) eyes of positional information of the wafer table WTB in each direction of the X axis, the Y axis, the Z axis, and θ X. Similarly, the XZ linear encoder 64X and the YZ linear encoder 64Y constitute a four-axis encoder 64 (see fig. 17) for measuring the position information of the wafer table WTB in each direction of the X axis, the Y axis, the Z axis, and θ X for a plurality of eyes (four eyes here).

Here, the head portions 62A, 62C are divided intoFour XZ heads 65X and 64X (more precisely, scales 39 of measuring beams emitted from the XZ heads 65X and 64X) are provided separately₁,39₂Upper illumination point) and four YZ heads 65Y,64Y (more precisely, scales 39 of measurement beams emitted from the YZ heads 65Y,64Y₁,39₂Upper irradiation point) is set to be a relatively large scale 39₁,39₂Has a narrow width in the X-axis direction. Therefore, at the time of exposure or the like, at least one of the four XZ heads 65X,64X and the YZ heads 65Y,64Y faces the corresponding scale 39 at any time₁,39₂(to which the measuring beam is irradiated). Here, the width of the scale means the width of the diffraction grating (or the formation region), more precisely, a range in which the position can be measured by the head.

Thus, four-axis encoder 65 and four-axis encoder 64 constitute 1 st top encoder system 80A that measures positional information in the six-degree-of-freedom direction of fine movement stage WFS supported by coarse movement stage WCS when wafer stage WST is positioned at exposure station 200.

The measured values of the encoders constituting the 1 st-side encoder system 80A are supplied to the main controller 20 via the switching unit 150A (see fig. 16, 17, and the like).

Although not shown, when main controller 20 drives wafer stage WST in the X-axis direction, XZ heads 65X,64X and YZ heads 65Y,64Y for measuring the positional information of wafer table WTB are sequentially switched to adjacent XZ heads 65X,64X and YZ heads 65Y, 64Y. That is, in order to smoothly switch (connect) the XZ head and the YZ head, the distance WD between the adjacent XZ head and the YZ head included in the head portions 62A and 62C is set to the relative scale 39 as described above₁,39₂Has a narrow width in the X-axis direction.

As is clear from the description so far, in the present embodiment, when wafer stage WST is positioned at exposure station 200, the position information in the six-degree-of-freedom direction of fine movement stage WFS supported by coarse movement stage WCS can be measured in parallel by first back-side encoder system 70A and first top-side encoder system 80A.

However, the 1 st topside encoder system 80A and the 1 st backside encoder system 70A each have advantages and disadvantages as described below.

In the 1 st top encoder system 80A, there are observed disadvantages such as a large fluctuation in the static component (including the component of the extremely low frequency band) of the measurement signal, a low rigidity of the wafer table WTB, and a large amplitude due to long-term fluctuations such as the deformation of the plate 28 and the drift of the heads 65X,64X, 65Y, and 64Y, and conversely, there are advantages such as a small influence due to the vibration of the organism, and a small measurement error except for the extremely low frequency band.

On the other hand, the 1 st backside encoder system 70A has advantages such as being advantageous in frequency characteristics because it observes a portion where long-term variations such as deformation of the grating RG and drift of the heads 73a to 73d are small, reliability of the static component of the measurement signal is high, and rigidity of the fine movement stage WFS is high in a high frequency band, but has advantages such as being advantageous in frequency characteristics because the measurement arm 71A (arm member 71A)₁) The cantilever support structure has a length of 500mm or more, and therefore has a disadvantage of a large influence of dark vibration (vibration of the body) in a frequency band of about 100Hz to 400 Hz.

Therefore, in the present embodiment, including the exposure time described later, when wafer stage WST is positioned at exposure station 200, for example, as shown in fig. 13(a), 1 st back-side encoder system 70A and 1 st top-side encoder system 80A measure the position information of fine movement stage WFS (wafer table WTB) in parallel, and the position of wafer table WTB is controlled based on the position information of the highly reliable one. Therefore, the 1 st backside encoder system 70A and the 1 st topside encoder system 80A are connected to the main control device 20 via the switching unit 150A (see fig. 16, 17, and the like).

Fig. 18 shows a specific example of the configuration of the switching unit 150A. The switching unit 150A includes: two switching switch sections 158a and 158 b; the combining filter unit 160 receives the output signal F of the 1 st backside encoder system 70A via one output terminal a of the switch unit 158a_BThe output signal of the 1 st top-side encoder system 80A is input via one output terminal d of the changeover switch section 158bNumber F_TAnd combining the position signals F_HOutput to the main control device 20.

The switch unit 158a has an input terminal (not shown) connected to the 1 st backside encoder system 70A and three output terminals a, b, and c, and switches and connects the input terminal and any one of the three output terminals a, b, and c. In this case, the output terminal b is connected to the main controller 20, and the output terminals c are all unconnected terminals (hereinafter, referred to as open terminals).

The changeover switch unit 158b has an input terminal (not shown) connected to the 1 st top encoder system 80A and three output terminals d, e, f, and changes over the input terminal and any one of the three output terminals d, e, f. In this case, the output terminal e is connected to the main control device 20, and the output terminals f are all unconnected terminals.

The switching of the switching switch units 158a and 158b is performed by receiving a switching signal (or selection signal) indicated by a broken line in fig. 18 from the main control device 20. The main controller 20 inputs a switching signal (or a selection signal) to the switching switches 158a and 158b according to a predetermined processing algorithm or according to an external command.

In the present embodiment, the switching unit 150A is configured to alternately set four states as follows by the main control device 20.

The switching unit 150A is set to the 1 st state in which the input terminal of the switch unit 158a is connected to the output terminal a and the input terminal of the switch unit 158b is connected to the output terminal d. In the 1 st state, the switching unit 150A combines the position signals F as described later_HOutput to the main control device 20.

The switching unit 150A is set to the 2 nd state in which the input terminal of the switching unit 158a is connected to the output terminal b and the input terminal of the switching unit 158b is connected to the output terminal e. In this 2 nd state, the switching unit 150A switches the output signal F of the 1 st backside encoder system 70A_BAnd the output signal F of the 1 st topside encoder system 80A_TOutput to the main control device 20.

The switching unit 150A is set to the 3 rd state in which the input terminal of the switching unit 158a is connected to the output terminal b and the input terminal of the switching unit 158b is connected to the output terminal f. In the 3 rd state, the switching unit 150A switches only the output signal F of the 1 st backside encoder system 70A_BOutput to the main control device 20.

The switching unit 150A is set to the 4 th state in which the input terminal of the switch unit 158a is connected to the output terminal c and the input terminal of the switch unit 158b is connected to the output terminal e. In the 4 th state, the switching unit 150A switches only the output signal F of the 1 st-side encoder system 80A_TOutput to the main control device 20.

For convenience of description, the 1 st, 2 nd, 3 rd and 4 th states are referred to as 1 st, 2 nd, 3 rd and 4 th modes of the switching unit 150A. That is, the switching unit 150A can alternatively set four modes of output to the main control device 20.

The combining filter unit 160 sets the output signal F of the 1 st backside encoder system 70A when the switching unit 150A is set to the 1 st mode_BOutput signal F from the 1 st top side encoder system 80A_TAs input, a combined position signal F to be used for position control of the fine movement stage WFS_HOutput to the main control device 20.

The combining filter unit 160 includes: a 1 st filter part 160A having output signals F inputted to the 1 st backside encoder system 70A_BHas a cut-off frequency of fc₁Low pass filter Lfc₁And a cut-off frequency fc₂(>fc₁) High pass filter Hfc of₂For outputting the signals passed through the two filters Lfc respectively₁And filter Hfc₂An addition signal of the signal of (a); and a 2 nd filter part 160b having output signals F inputted to the 1 st top side encoder system 80A, respectively_THas a cut-off frequency of fc₁High pass filter Hfc of₁And a cut-off frequency fc₂Low pass filter Lfc₂For outputting through the two filters Hfc₁And filter Lfc₂The addition signal of (a). The combining filter unit 160 uses the sum signal of the output of the 1 st filter unit 160a and the output of the 2 nd filter unit 160b as the combined position signal F_HOutput to the main control device 20.

Here, the cut-off frequency fc₁For example, the frequency is set to be slightly lower than the lower limit frequency 100Hz of the frequency band 100Hz to 400Hz of the dark vibration affected by the 1 st backside encoder system 70A, for example, 50 Hz. Also, a cut-off frequency fc₂For example, the frequency is set to be slightly higher than the upper limit frequency 400Hz of the frequency band 100Hz to 400Hz of the dark vibration affected by the 1 st backside encoder system 70A, for example, 500 Hz.

After the cutoff frequency fc has been set as described above₁,fc₂At this time, as shown by a solid line in fig. 13B, the output signal (measurement result of position) of the 1 st backside encoder system 70A is output from the combining filter section 160 in a low frequency range lower than 50Hz, the output signal (measurement result of position) of the 1 st topside encoder system 80A is output in a middle frequency range higher than 50Hz and lower than 500Hz, and the output signal (measurement result of position) of the 1 st backside encoder system 70A is output in a high frequency range higher than 500Hz as the combined position signal F_H。

Thus, in the low frequency region where the reliability of the measurement value is lowered due to the influence of the deformation of the plate and the drift of the head in the 1 st top-side encoder system 80A, the measurement value of the 1 st back-side encoder system 70A which is highly reliable without being affected by the influence can be output to the main controller 20 as the measurement result of the position in the XY plane of the wafer table WTB, in the intermediate frequency region where the reliability of the measurement value is lowered due to the influence of the dark vibration in the 1 st back-side encoder system 70A, the measurement value of the 1 st top-side encoder system 80A which is highly reliable without being affected by the influence can be output to the main controller 20 as the measurement result of the position in the XY plane of the wafer table WTB, and in the high frequency region where the rigidity of the wafer table WTB is low and the amplitude is large due to the observation of the 1 st top-side encoder system 80A, the measurement value of the 1 st back-side encoder system 70A which is advantageous in frequency characteristics can be output as the measurement result To the main control device 20. Main controller 20 can drive fine movement stage WFS (position control) when wafer stage WST is positioned in exposure station 200, as needed, based on the position measurement value of wafer table WTB with high reliability.

As described above, in the present embodiment, when the switching unit 150A is set to the 1 st mode, the measurement information (measurement signal) of the 1 st backside encoder system 70A and the 1 st topside encoder system 80A is switched in the frequency band, and as a result, the position of the wafer table WTB can be controlled based on the measurement information with higher reliability. Further, for example, the case where the 1 st top-side encoder system 80A is disadvantageous in no frequency characteristic in the high frequency region, or the like, that is, there is no need to set the cutoff frequency fc₂. In this case, only the pass cut-off frequency fc is set₁The filter circuit unit of (1) the high-pass filter and the low-pass filter to synthesize the combined position signal of the output signals of the 1 st backside encoder system 70A and the 1 st topside encoder system 80A is sufficient.

The switching unit 150A is set to, for example, the 3 rd mode or the 4 th mode, and is set when the reliability of the measurement information of the 1 st backside encoder system 70A is apparently high or when the reliability of the measurement information of the 1 st topside encoder system 80A is high

The switching unit 150A is set to the 2 nd mode in the case where both the measurement information of the 1 st backside encoder system 70A and the measurement information of the 1 st topside encoder system 80A must be acquired.

As described above, in the present embodiment, when the switching unit 150A is set to the 1 st mode, the drive (position control) of the fine movement stage WFS is performed in the intermediate frequency range based on the measurement value of the 1 st top-side encoder system 80A, and therefore, it is preferable to perform the drive (position control) of the fine movement stage WFS using the pair of scales 39₁,39₂Updating the coordinate system of the two-dimensional raster setting of (1), i.e. a pair of scales 39₁,39₂The grid (grid error) (hereinafter referred to as the re-updating of the coordinate system of the 1 st topside encoder system 80A).

Therefore, when wafer stage WST is positioned in exposure station 200, for example, during exposure, main controller 20 performs the coordinate system updating of top-side 1 encoder system 80A in the following manner.

The coordinate system of the 1 st backside encoder system 70A and the plurality of four-axis heads 65 of the 1 st topside encoder system 80A according to the present embodiment₁～65₄,64₁～64₄The relationship (c) can be shown in FIG. 14 (A). Here, R₁、R₂、R₃、R₄Corresponding to four-axis reading head 65 respectively₁、65₂、65₃、65₄，L₁、L₂、L₃、L₄Corresponding to four-axis reading head 64 respectively₁、64₂、64₃、64₄。

Symbol Ct_i(i ═ 1,2, 3, 4) meaning with L_iAnd R_iCoordinate system, i.e., L, of suspended 1 st backside encoder system 70A_iAnd R_iRespectively observe the scale 39₁,39₂The local coordinate system corresponding to the region on the two-dimensional grating RG viewed with the three-dimensional encoder 73a immediately below the exposure position of the 1 st backside encoder system 70A. D represents the distances from the center of the entire coordinate system of the 1 st backside encoder system 70A to R1, R2, R3, and R4₁、D₂、D₃、D₄And D is₁+D_(5－1)When W is equal to Ct_iMesh distortion of_i(x_i、y_i) Represented by the following formula (1). Here, Δ is a three-dimensional vector having x, y, z components.

Δ_i(x_i、y_i)＝1/W·{D_iΔ_L(x_i、y_i)+D_(5－i)Δ_R(x_i、y_i)}…(1)

The (x) in the formula (1)_i、y_i) Generalized and deformed, the sub-formula (1)' can be obtained.

WΔ_i(x、y)＝D_iΔ_L(x、y)+D_(5－i)Δ_R(x、y)…(1)’

When 1,2, 3, and 4 are substituted into i in the formula (1)', the following formulae (2) to (5) can be obtained.

WΔ₁(x、y)＝D₁Δ_L(x、y)+D₄Δ_R(x、y)…(2)

WΔ₂(x、y)＝D₂Δ_L(x、y)+D₃Δ_R(x、y)…(3)

WΔ₃(x、y)＝D₃Δ_L(x、y)+D₂Δ_R(x、y)…(4)

WΔ₄(x、y)＝D₄Δ_L(x、y)+D₁Δ_R(x、y)…(5)

Two formulae are obtained from the sum and difference of formulae (2) and (5), and the following two formulae can be obtained by solving the two formulae.

Δ_L(x、y)＝WΔ₁(x、y)/D₁

Δ_R(x、y)＝WΔ₄(x、y)/D₄

Similarly, two formulae are obtained from the sum and difference of formulae (3) and (4), and the following two formulae can be obtained by solving the two formulae.

Δ_L(x、y)＝WΔ₂(x、y)/D₂

Δ_R(x、y)＝WΔ₃(x、y)/D₃

Therefore, it can be seen that Ct is_iMesh distortion of_i(x_i、y_i) A scale 39 shown in FIG. 14(B) was obtained₂,39₁Mesh distortion of_L(t、s)、Δ_R(t、s)。

The main controller 20 calculates the scale 39 at predetermined intervals, for example, during exposure of each wafer based on the above principle₂,39₁Mesh distortion of_L(t、s)、Δ_R(t, s) and updating at leastOnce. That is, the coordinate system of the 1 st backside encoder system 70A, whose grid has been updated, matches the grid of the scale of the 1 st topside encoder system 80A with each other, thereby updating its grid. That is, the updating of the coordinate system of the 1 st topside encoder system 80A is performed in this manner.

However, when the coordinate system of the 1 st-side encoder system 80A is updated, the main controller 20 does not perform the above-described fitting and updating with respect to the offsets in the six-degree-of-freedom directions (the directions of the X axis, the Y axis, the Z axis, θ X, θ Y, and θ Z) of the coordinate system, but directly stores the offsets. The reason for this is that the coordinate system of the 1 st backside encoder system 70A has no long-term stability in the six-degree-of-freedom direction, and the coordinate system of the 1 st topside encoder system 80A is reliable, because there is no mechanical long-term stability of the measurement arm 71A, and the detection points of the plurality of heads used for position measurement in the θ x, θ y, and θ z directions are spaced narrowly. Therefore, the above-described refresh process is performed after the offset in the six-degree-of-freedom direction is removed from the back/top difference. The six-degree-of-freedom offset component is used in POST STREAM (POST STREAM) processing described later.

Next, the configuration of 2 nd fine movement stage position measurement system 110B (see fig. 16) used for measuring the position information of fine movement stage WFS movably held by coarse movement stage WCS located at measurement station 300 will be described.

Second backside encoder system 70B of second fine movement stage position measurement system 2B is provided with a second backside encoder system 70B disposed on alignment device 99 (alignment systems AL1, AL 2) at wafer stage WST₁～AL2₄) Measurement arm 71B provided in a space inside coarse movement stage WCS is inserted in a lower state.

As shown in fig. 9(a), the measurement arm 71B includes an arm member 71 supported in a cantilever state on the main support BD via a support member 72B₂And is accommodated in the arm member 71₂An encoder head (optical system) described later. Arm member 71 of measuring arm 71B₂Is longer than the arm member 71₁The entire length is roughly symmetrical with the measurement arm 71A.

As described above, wafer stage WST is disposed in alignment apparatus 99 (alignment systems AL1, AL 2)₁～AL2₄) In the lower state, as shown in fig. 9(a), the arm member 71 of the measuring arm 71B₂The tip end portion is inserted into a space of coarse movement stage WCS, and the upper surface thereof faces grating RG (not shown in fig. 1 and 7, see fig. 2B, etc.) provided on the lower surface (more precisely, the lower surface of main body portion 81) of fine movement stage WFS (wafer table WTB). Arm member 71₂The upper surface of (1) is arranged substantially parallel to the lower surface of fine movement stage WFS with a predetermined gap (clearance), for example, a gap of several mm or so, formed between the upper surface and the lower surface of fine movement stage WFS.

As shown in fig. 17, the 2 nd backside encoder system 70B includes a pair of three-dimensional encoders 75a and 75B that measure the positions of the fine movement stage WFS in the X-axis, Y-axis, and Z-axis directions, an XZ encoder 75c that measures the positions of the fine movement stage WFS in the X-axis and Z-axis directions, and a YZ encoder 75d that measures the positions of the fine movement stage WFS in the Y-axis and Z-axis directions, as in the 1 st backside encoder system 70A described above.

Each of the XZ encoders 75c and 75d is housed in the arm member 71₂The two-dimensional head having the X-axis and Z-axis directions as the measurement directions and the two-dimensional head having the Y-axis and Z-axis directions as the measurement directions are provided inside. For convenience of explanation, the two-dimensional heads provided in the XZ encoder 75c and the XZ encoder 75d are denoted as an XZ head 75c and a YZ head 75d using the same reference numerals as those of the encoders. The three-dimensional encoders 75a and 75b include three-dimensional heads having X-axis, Y-axis, and Z-axis directions as measurement directions. Hereinafter, for convenience of explanation, the three-dimensional heads provided in the three-dimensional encoders 75a and 75b are denoted by the three-dimensional heads 75a and 75b using the same reference numerals as those of the encoders. The two-dimensional heads 75c and the three-dimensional heads 75a and 75b can be configured in the same manner as the two-dimensional heads 73c and 73d and the three-dimensional heads 73a and 73 b.

Fig. 9(B) is a perspective view showing the distal end portion of the arm member 71B. As shown in fig. 9(B), three-dimensional heads 75a and 75B and two-dimensional heads 75c and 75d are similar to three-dimensional head 7 described above3a,73b and two-dimensional heads 73c,73d are disposed on arm member 71 in bilaterally symmetrical but identical positional relationship₂Of the inner part of (a). The detection center of one of the three-dimensional heads 75a coincides with the detection center of the first alignment system AL1, which is the alignment position.

The outputs of the encoders 75a,75B,75c,75d of the 2 nd backside encoder system 70B are supplied to the main control device 20 via the switching unit 150B having the same configuration as the switching unit 150A described above (see fig. 16 and 17).

When wafer stage WST is positioned at measurement station 300, for example, at the time of wafer alignment described later, main controller 20 repeats the measurement of the position in the six-degree-of-freedom direction of the same wafer table WTB and the parallel measurement of the same difference as described above at predetermined sampling intervals based on the total ten-degree-of-freedom measurement values of heads 75a to 75d of second backside encoder system 70B, and updates the coordinate system of second backside encoder system 70B. In the position measurement and the difference measurement, the above description can be directly applied to the case where the exposure position is replaced with the alignment position.

In the present embodiment, since the detection points of the three-dimensional head 75a are aligned with the alignment positions and the positions of the fine movement stage WFS in the X-axis, Y-axis, and Z-axis directions are measured at the detection points, the positions of the fine movement stage WFS in the X-axis, Y-axis, and Z-axis directions are calculated using the measurement values of the three-dimensional head 75 a. On the other hand, for example, when the alignment position coincides with a point at the center of the detection points of the pair of three-dimensional heads 75a and 75b, the main controller 20 may determine the positions of the fine movement stage WFS in the X-axis, Y-axis, and Z-axis directions from the average values of the measurement values of the pair of three-dimensional heads 75a and 75b in the X-axis, Y-axis, and Z-axis directions.

Further, since the detection points on the substantial gratings RG in the X-axis, Y-axis, and Z-axis directions of the 2 nd backside encoder system 70B respectively coincide with the detection centers (alignment positions) of the first alignment system AL1, the occurrence of so-called abbe errors can be suppressed to a degree that can be substantially ignored. Therefore, main controller 20 can accurately measure the positions of fine movement stage WFS in the X-axis direction, Y-axis direction, and Z-axis direction by using 2 nd backside encoder system 70B without abbe error.

Next, the configuration of 2 nd topside encoder system 80B that constitutes part of 1 st fine movement stage position measurement system 110B, and the like will be described. The 2 nd topside encoder system 80B can measure the position information of the fine movement stage WFS in the six-degree-of-freedom direction in parallel with the 2 nd backside encoder system 70B.

In the exposure apparatus 100, as shown in FIG. 4, alignment systems AL1 and AL2 are provided on the-Y side of the head units 62C and 62A, respectively₁～AL2₄At substantially the same Y position, the read heads 62E and 62F are disposed, respectively. The head units 62E and 62F include a plurality of heads, respectively, as described later, and these heads are fixed to the main holder BD in a suspended state via a support member.

As shown in fig. 4, the head units 62F and 62E include four-axis heads 68₁～68₄,67₁～67₄. In a four-axis readhead 68₁～68₄As shown in fig. 5, and the above-mentioned four-axis reading head 65₁～65₄The XZ head 68X is accommodated in the same manner₁～68X₄And YZ read head 68Y₁～68Y₄. Similarly, in a four axis reading head 67₁～67₄The housing of (1) accommodates an XZ head 67X₁～67X₄And YZ read head 67Y₁～67Y₄. XZ read head 68X₁～68X₄And 67X₁～67X₄And YZ head 68Y₁～68Y₄And 67Y₁～67Y₄For example, an encoder head having the same configuration as that of the displacement measuring sensor head disclosed in U.S. patent No. 7,561,280 can be used.

XZ reading head 67X₁～67X₃,68X₂～68X₄(more precisely, the XZ head 67X₁～67X₃,68X₂～68X₄Ruler 39 of the emitted measuring beam₁,39₂Upper irradiation point) is arranged along reference axis LA and XZ head 64X₁～64X₃,65X₂～65X₄Each approximately the same X position.

YZ reading head 67Y₁～67Y₃,68Y₂～68Y₄(more precisely, YZ head 67Y₁～67Y₃,68Y₂～68Y₄Ruler 39 of the emitted measuring beam₁,39₂Upper irradiation point) is a straight line LA parallel to the reference axis LA and separated from the reference axis LA toward the-Y side by a predetermined distance₁Upper arranged corresponding to the XZ head 67X₁～67X₃,68X₂～68X₄The same X position.

The remaining XZ heads 67X₄、68X₁And YZ head 67Y₄、68Y₁Is at the same time as the XZ read head 64X₄、65X₁From the reference axis LA and the straight line LA at substantially the same X position₁Are arranged at the same distance towards the-Y direction and are arranged at the second alignment system AL2₁,AL2₄the-Y side of the respective detection center. Hereinafter, the XZ head 68X is read as necessary₁～68X₄,67X₁～67X₄And YZ reading head 68Y₁～68Y₄,67Y₁～67Y₄Also labeled as XZ read heads 68X,67X and YZ read heads 68Y,67Y, respectively.

The heads 62F and 62E are respectively formed using a scale 39₁,39₂An XZ linear encoder for measuring a plurality of eyes (here, four eyes) at the X position and the Z position of wafer table WTB, and a YZ linear encoder for measuring a plurality of eyes (here, four eyes) at the Y position and the Z position. For the sake of convenience of explanation, the encoders are denoted by XZ linear encoders 68X,67X and YZ linear encoders 68Y,67Y using the same reference numerals as for the XZ heads 68X,67X and the YZ heads 68Y,67Y, respectively (see fig. 17).

In the present embodiment, an XZ linear encoder 68X and a YZ linear encoder 68Y constitute a four-axis encoder 68 (see fig. 17) for measuring the position information of wafer table WTB in each direction of the X axis, Y axis, Z axis, and θ X with respect to a plurality of eyes (four eyes here). Similarly, the XZ linear encoder 67X and the YZ linear encoder 67Y constitute a four-axis encoder 67 (see fig. 17) for measuring a plurality of eyes (four eyes here) of positional information of the wafer table WTB in each direction of the X axis, the Y axis, the Z axis, and θ X.

Here, for the same reason as described above, at least one of the four XZ heads 68X,67X and YZ heads 68Y,67Y faces the corresponding scale 39 at any time during alignment measurement or the like₁,39₂(to which the measuring beam is irradiated). Thus, four-axis encoder 68 and four-axis encoder 67 constitute 2 nd topside encoder system 80B for measuring the six-degree-of-freedom direction position information of fine movement stage WFS supported by coarse movement stage WCS when wafer stage WST is positioned at measurement station 300.

The measured values of the respective encoders constituting the 2 nd-top encoder system 80B are supplied to the main controller 20 via the switching unit 150B (see fig. 16, 17, and the like).

As is clear from the description so far, in the present embodiment, when wafer stage WST is positioned at measurement station 300, the positional information in the six-degree-of-freedom direction of fine movement stage WFS supported by coarse movement stage WCS can be measured in parallel by second 2-th backside encoder system 70B and second 2-th topside encoder system 80B.

Similarly to the switching unit 150A, the switching unit 150B is set to the 1 st to 4 th modes by the main control device 20. When the 1 st, 3 rd, and 4 th modes are set, the measurement values with higher reliability among the measurement values of the 2 nd backside encoder system 70B and the 2 nd topside encoder system 80B are supplied to the main controller 20 by the combining filter unit 160 in accordance with the setting of the mode, and based on the measurement values, the wafer stage WTB is driven (position control) when the wafer stage WST is located at the measurement station 300.

In the same manner as described above, the main controller 20 updates the coordinate system of the 2 nd top-side encoder system 80B by matching the grid of the scale of the 2 nd top-side encoder system 80B with the coordinate system of the 2 nd back-side encoder system 70B whose grid has been updated.

In addition to the above description, the 2 nd backside encoder system 70B and the 2 nd topside encoder system 80B of the 2 nd fine movement stage position measurement system 110B can be directly applied to the description of the 1 st backside encoder system 70A and the 1 st topside encoder system 80A.

Here, although the front-back exchange is explained, the 3 rd backside encoder system 70C (see fig. 16) for measuring the position of the fine movement stage WFS (wafer table WTB) in each direction of the Y axis, the Z axis, θ Y, and θ Z as necessary at the time of focus mapping described later is used.

Arm member 71 of measuring arm 71B₂As shown in fig. 9(B), the pair of YZ heads 77a and 77B is disposed on the arm member 71 such that a point separated by the same distance from the detection center of each of the three-dimensional heads 75a and 75B toward the + Y side is set as the detection center thereof₂Of the inner part of (a). The detection center of the YZ head 77a on the + X side coincides with the AF center, that is, the detection center of the multipoint AF system (90a,90b) described above. The 3 rd backside encoder system 70C is constituted by the pair of YZ reading heads 77a, 77 b.

The output of the 3 rd backside encoder system 70C is supplied to the main control device 20 via the switching unit 150C having the same configuration as the switching unit 150A described above (see fig. 16, 17, and the like). When the output of 3 rd backside encoder system 70C is supplied to main control device 20 via switching unit 150C, main control device 20 obtains the Y position and the Z position of fine movement stage WFS (wafer table WTB) from the position information in the Y axis direction and the Z axis direction measured by YZ head 77a, and obtains the position in the θ Z direction (θ Z rotation) and the position in the θ Y direction (θ Y rotation) of fine movement stage WFS (wafer table WTB) from the position information in the Y axis direction and the Z axis direction measured by a pair of YZ heads 77a and 77 b.

Further, when the alignment center coincides with the detection point centers of the pair of three-dimensional heads 75a,75b, the AF center is set to coincide with the detection point centers of the pair of YZ heads 77a, 77 b. Therefore, in this case, main controller 20 obtains the Y position and the Z position of fine movement stage WFS (wafer table WTB) from the average value of the position information in the Y axis and Z axis directions measured by the pair of YZ heads 77a and 77 b.

Although the 3 rd backside encoder system 70C has somewhat different head positions, numbers, and the like, the description of the 1 st backside encoder system 70A can be basically applied in the same manner except for the description so far.

In the present embodiment, a 3 rd top-side encoder system 80C is also provided corresponding to the 3 rd back-side encoder system 70C. The 3 rd top encoder system 80C, as shown in FIG. 4, includes a pair of four-axis readheads 66 arranged symmetrically about a reference axis LV₁、66₂. A pair of four-axis read heads 66₁、66₂Respectively arranged on the four-axis reading head 68₃Position of + Y side of (2), four-axis reading head 67₂Is fixed to the main stand BD in a suspended state via the support member. A pair of four-axis read heads 66₁、66₂As shown in fig. 5, with the four-axis reading head 65 described above_i、65_i、66_i、68_iSimilarly, XZ head 66X including detection points arranged in the Y-axis direction₁、66X₂And YZ read head 66Y₁、66Y₂. A pair of four-axis read heads 66₁、66₂Each having an XZ read head 66X₁、66X₂The Y position of the detection point of (2) is coincident with the Y position of the detection center of the AF light beam (straight line LA)₂Above). Also, XZ head 66X₂Is located at the X position of the detection point of (2) with respect to the XZ head 67X₂Slightly on the + X side, XZ head 66X₁Is located at the X position of the detection point of (2) than the XZ head 68X₃The detection point of (2) is slightly on the-X side. A pair of four-axis read heads 66₁、66₂Form respective use scales 39₁,39₂And a pair of four-axis encoders for measuring positional information of wafer table WTB in each direction of X, Y, Z and θ X. The 3 rd top side encoder system 80C is constituted by this pair of four-axis encoders.

The measured values of the respective encoders constituting the 3 rd-side encoder system 80C are supplied to the main controller 20 via the switching unit 150C having the same configuration as the switching unit 150A (see fig. 16, 17, and the like).

In the present embodiment, positional information of wafer table WTB (fine movement stage WFS) in the four-degree-of-freedom direction (each direction of Y axis, Z axis, θ Z, and θ Y) can be measured by 3 rd topside encoder system 80C and 3 rd backside encoder system 70C in parallel.

Similarly to the switching unit 150A, the switching unit 150C is set to the 1 st to 4 th modes by the main control device 20. When the 1 st, 3 rd, and 4 th modes are set, the combination filter unit 160 supplies the measurement value with the higher reliability among the measurement values of the 3 rd backside encoder system 70C and the 3 rd topside encoder system 80C to the main controller 20 according to the setting of the modes.

However, at the time of focus map described later, wafer stage WST is positioned at measurement station 300, wafer alignment measurement is performed in parallel with the focus map, and until the alignment measurement is completed, the position of fine movement stage WFS (wafer table WTB) in the six-degree-of-freedom direction is servo-controlled by main controller 20 based on the merged position signal of 2 nd fine movement stage position measurement system 110B, and the measurement values of 3 rd top-side encoder system 80C and 3 rd back-side encoder system 70C are mainly used as the measurement data of the focus map. After the wafer alignment measurement is completed, the drive of the fine movement stage WFS (servo control of the position) is performed by the main controller 20 based on the measurement values of the 3 rd top side encoder system 80C and/or the 3 rd back side encoder system 70C from the time when the wafer stage deviates from the measurement range of the 2 nd fine movement stage position measurement system 110B to the time when the focus map is completed.

In the present embodiment, there is further provided 4 th topside encoder system 80D (see fig. 16) for measuring the position of wafer table WTB in the six-degree-of-freedom direction while wafer stage WST is moving from the end position of the focus map to exposure station 200. As shown in fig. 4, the 4 th top encoder system 80D includes a pair of three-dimensional heads 79 disposed at positions intermediate head 62A and head 62F in the Y-axis direction and offset in the X-axis direction and the Y-axis direction₁、79₂. A pair of three dimensional read heads 79₁、79₂Is fixed to the main stand BD in a suspended state via the support member. As shown in FIG. 5, a pair of three-dimensional read heads 79₁、79₂Each bag ofIncluding XZ heads 79X arranged in the Y-axis direction₁、79X₂Y head 79Y₁、79Y₂. Y read head 79Y₁、79Y₂The one-dimensional reading head is a one-dimensional reading head with the Y-axis direction as the measurement direction. In this case, the XZ read head 79X₁、79X₂Are set to be respectively in contact with the XZ head 68X₂、66X₁The same position. Y read head 79Y₁、79Y₂For example, a diffractive interference type encoder readhead as disclosed in U.S. patent application publication No. 2008/0088843, etc., can be used.

A pair of three dimensional read heads 79₁、79₂All of which use a scale 39₁And a pair of three-dimensional encoders 79A and 79B (see fig. 16) for measuring positional information of wafer table WTB in the X, Y, and Z-axis directions. The measurement values of the pair of three-dimensional encoders 79A, 79B are supplied to the main control device 20. A pair of three dimensional read heads 79₁、79₂The same scale 39 can be used when the center position of the wafer table WTB in the X-axis direction coincides with the reference axis LV₁The position of wafer table WTB in the six-degree-of-freedom direction is measured. The 4 th topside encoder system 80D is constructed by a pair of three dimensional encoders 79A, 79B.

Although the 4 th top-side encoder system 80D has a somewhat different head position, number, and the like, the above description of the 1 st top-side encoder system 80A can be basically applied in the same manner except for the above description.

The exposure apparatus 100 of the present embodiment, as shown in fig. 4, performs exposure on the reference axis LV at a predetermined position between the exposure position and the alignment position, for example, on the reference axis LV and the three-dimensional head 79₁XZ read head 79X₁The unload position UP1 is set at substantially the same Y position, and the standby position UP2 is set at a position spaced apart from the-X side of the unload position UP1 by a predetermined distance. The loading position LP is set on the reference axis LV on the-Y side of the alignment position.

As shown in fig. 15, the unloading device 170 is disposed at the unloading position UP1, the standby position UP2, and the vicinity thereof. The unloading device 170 is attached to a support FL of a rectangular frame shape in plan view, which is disposed around the main support BD so as to be separated from the main support BD in terms of vibration, and which is supported on the floor by a support member, not shown, for example.

The unloading device 170 includes a 1 st arm 171 fixed to the lower surface (-Z side surface) of the holder FL and extending in a direction at a predetermined angle α (α is a predetermined angle less than 10 degrees, for example) with respect to the Y axis, a 2 nd arm 172 having a longitudinal end surface fixed to one side surface (+ X side surface) of a longitudinal end portion (+ Y side end surface) of the 1 st arm 171 and extending in the X axis direction, a 1 st unloading slider 170A movable in the longitudinal direction of the 2 nd arm 172, and a 2 nd unloading slider 170B movable in the longitudinal direction of the 1 st arm 171.

The 1 st arm 171 is formed of a rod-shaped member disposed to face the lower surface of the holder FL in a state where one longitudinal end faces the vicinity of the Y-axis direction center of the-X side portion of the holder FL and the other longitudinal end faces the-Y side end portion of the-X side portion of the holder FL. The 1 st arm 171 is fixed on its upper surface to the lower surface of the bracket FL at all or a plurality of places. A guide (not shown) is provided on the lower surface (back surface) of the 1 st arm 171 in the longitudinal direction, and a fixing member (not shown) is disposed in parallel with the guide.

The 2 nd arm 172 is formed of a rod-like member having substantially the same length as the 1 st arm 171. The 2 nd arm 172 is fixed to one side (+ X side) of one end (+ Y side) in the longitudinal direction of the 1 st arm 171 at an angle of (90 ° - α) with respect to the 1 st arm 171 in the XY plane. A guide (not shown) is provided on the lower surface (back surface) of the 2 nd arm 172 in the longitudinal direction in the same manner as the 1 st arm 171, and a fixing member (not shown) is disposed in parallel with the guide.

The 1 st unloading slider 170A includes a 1 st slide member 173 movably provided along the guide on the back surface of the 2 nd arm 172, and a wafer holding portion 174 arranged below the 1 st slide member 173 and vertically movable in a plan view in an X shape by a vertical movement driving portion 176 provided on the 1 st slide member 173 (see, for example, fig. 36 a). A movable element constituting a 1 st slider driving linear motor together with a fixed element disposed on the 2 nd arm 172 is housed in the 1 st slide member 173.

As shown in fig. 15, the wafer holding portion 174 includes a main body portion 174a formed by combining a pair of rod-shaped members in an X shape in a plan view, and four holding portions 174b attached to the four front end portions of the main body portion 174a, respectively.

The pair of rod-like members constituting the main body 174a have a longitudinal dimension slightly longer than the diameter of the wafer W, and are arranged so as to intersect each other at a predetermined angle at the longitudinal center. The main body 174a has an intersection of a pair of rod-like members fixed to the lower surface of the drive shaft of the vertical movement drive section 176.

Here, since the pair of rod-shaped members of main body 174a only needs to have four gripping portions 174b grip wafer W on wafer stage WST, the upper surface (or lower surface) of each rod-shaped member can be fixed to the same height by forming a groove in the central portion of the rod-shaped member and inserting the other rod-shaped member into the groove, and the other rod-shaped member can also be fixed to the lower surface of the rod-shaped member. In the case where the pair of rod-shaped members are connected to each other at positions where the heights of the pair of rod-shaped members are different (for example, in the case where the other rod-shaped member is fixed to the lower surface of the one rod-shaped member), it is preferable to align the Z-axis direction positions of the lower end portions of the four gripping portions 174b by adjusting the Z-axis direction lengths of the gripping portions 174b provided at both ends of the one rod-shaped member, or by forming the both end portions of the one rod-shaped member into a convex (or downwardly convex) shape having the same height as the both end portions of the other rod-shaped member.

Each of the four gripping portions 174b has a claw portion at a lower end thereof, which can support the back surface of the wafer. Each of the four gripping portions 174b is slidable along the rod-shaped member to which the gripping portion is attached via a driving mechanism, not shown. That is, the four gripping portions 174b can be opened and closed (see fig. 36C).

In the present embodiment, the 1 st unloading slider driving system 180A (see fig. 16) is configured to include the 1 st slider driving linear motor, the vertical movement driving unit 176, and the driving mechanism for opening and closing the gripping portion 174 b.

The 2 nd unloading slider 170B includes a 2 nd sliding member 175 provided on the back surface of the 1 st arm 171 so as to be movable along the guide, and a Y-shaped holding portion 177 disposed below the 2 nd sliding member 175 and vertically movable and rotationally driven around the Z axis by a vertical movement rotation driving portion 179 provided on the 2 nd sliding member 175 (see, for example, fig. 32 a). The 2 nd slide member 175 houses a movable element constituting a 2 nd slider driving linear motor together with a fixed element disposed on the 1 st arm 171.

As shown in fig. 15, the Y-shaped holding portion 177 is formed of a thin plate member having a Y-shape in a plan view, and has an unillustrated suction portion on the upper surface thereof for suction-holding the wafer W by vacuum suction (or electrostatic suction). The Y-shaped holding portion 177 is slightly smaller in size in the XY plane than the wafer W, and the tip portion of the Y-shape (i.e., the tip dividing portion) is located within the outer edge of the wafer W in a state where the wafer W is held by the suction portion. The Y-shaped holding portion 177 has an end portion opposite to the front end portion of the Y-shape fixed to the lower end of the drive shaft of the vertical movement/rotation driving portion 179.

In the present embodiment, the 2 nd unloading slider driving system 180B (see fig. 16) is configured to include the 2 nd slider driving linear motor and the vertical movement/rotation driving unit 179 described above.

The 1 st and 2 nd unloading slide drive systems 180A, 180B are controlled by the master control device 20 (see fig. 16). The unloading device is not limited to the above configuration, and may be configured to move while holding the wafer W. The unloading position of the wafer W is not limited to the position between the projection optical system PL and the alignment apparatus 99, and for example, the wafer W may be unloaded from the alignment apparatus 99 on the side opposite to the projection optical system PL as in the embodiment described later.

Fig. 16 is a block diagram showing the input/output relationship of the main controller 20 configured to collectively control each unit, which is mainly configured by the control system of the exposure apparatus 100. The main controller 20 includes a workstation (or a microcomputer) and the like, and systematically constructs and controls each unit of the exposure apparatus 100. Fig. 17 shows a specific configuration example of the 1 st and 2 nd fine movement stage position measurement systems 110A and 110B of fig. 16. Fig. 18 shows an example of the configuration of the switching unit 150A in fig. 16.

Next, a parallel processing operation using wafer stage WST and measurement stage MST in exposure apparatus 100 according to the present embodiment will be described with reference to fig. 19 to 37. In the following operation, the main controller 20 controls the liquid supply device 5 and the liquid recovery device 6 of the local immersion device 8 in the above-described manner so as to fill the space immediately below the front end lens 191 of the projection optical system PL with water as needed. However, in the following description, for the sake of easy understanding, the description about the control of the liquid supply device 5 and the liquid recovery device 6 is omitted. In the following description of the operation, although a plurality of drawings are used, the same reference numerals are given to the same members in each drawing, and the same reference numerals are not given in some cases. That is, although the symbols in the drawings are different, the same structure is used regardless of whether the symbols are present or absent in the drawings. This point is the same as that of each of the drawings used in the description so far. Fig. 19 and the following simplified display of measurement stage MST.

The heads, the multi-spot AF system, the alignment system, and the like of the 1 st to 3 rd backside encoder systems 70A to 70C and the 1 st to 4 th topside encoder systems 80A to 80D are set from the OFF state to the ON state at the time of use or immediately before use, but description of the points will be omitted in the following description of the operation.

As preconditions, both the switching units 150A and 150B are set to, for example, the 1 st mode, and the switching unit 150C is set to, for example, the 2 nd mode. That is, the combined position signal F corresponding to the 1 st backside encoder system 70A and the 1 st topside encoder system 80A is provided from the 1 st micro-motion stage position measurement system 110A_HThe measured value (hereinafter, unless otherwise specified, both referred to as the measured value of the 1 st fine movement stage position measurement system 110A) of (B) is output to the main controller 20, and the combined position signal F corresponding to the 2 nd backside encoder system 70B and the 2 nd topside encoder system 80B is output from the 2 nd fine movement stage position measurement system 110B_HIs measured (hereinafter, unless otherwise particularly necessary, referred to as the measurement of the 2 nd fine movement stage position measurement system 110B)Value) to the main control device 20. Output signals (measurement values) from the 3 rd backside encoder system 70C and the 3 rd topside encoder system 80C are output to the main controller 20.

Fig. 19 shows a state in which wafer stage WST is located at loading position LP and measurement stage MST is located immediately below projection optical system PL. At this time, measurement arm 71B is inserted into the space of wafer stage WST, and the back surface (grating RG) of wafer table WTB faces measurement arm 71B. At this loading position LP, a new wafer W before exposure (here, a wafer W in the middle of a certain lot (one lot is 25 or 50 wafers) is loaded on wafer stage WST in the following order.

At this time, the wafer W before exposure is supported by the chuck unit 120 at the loading position LP at a time point after the flow (STREAM) process described later is completed on the preceding wafer and before the exposure is started, and the supported state is maintained. Specifically, as shown in fig. 20 a, the wafer W is held by a predetermined distance (gap) by the bernoulli chuck 124 located at a predetermined height position in the loading position LP, sucked (held or supported) in a non-contact manner, and the two positions of the back surface outer peripheral portion are supported by the pair of support plates 128 in contact from below, thereby restricting the movement in the six-degree-of-freedom direction. The temperature of the wafer W is controlled to a predetermined temperature, for example, 23 ℃.

As shown in fig. 20(B), the main controller 20 first raises the vertical moving pin 140 via the actuator 142. Next, the three vertical moving pins 140 abut on the back surface of the wafer W supported by the bernoulli chuck 124, and then stop rising while maintaining the bottom contact state. The three vertical moving pins 140 are pressed by a spring, not shown, in the + Z direction with a constant force when the upper end surface is located at the position other than the 2 nd position, which is the lowest position of the moving range.

Next, the main controller 20 slightly lowers the pair of support plates 128 via the vertical movement rotation driving unit 127 to be separated from the back surface of the wafer W, and rotates the support plates by a predetermined angle to be located at the 2 nd rotation position as shown in fig. 20 (C). When the pair of support plates 128 is separated from the back surface of the wafer W, a new wafer W moves from a state of being supported by the support plates 128 to a state of being supported by the vertical pins 140. In addition, the suction (holding or supporting) of the wafer W by the bernoulli chuck 124 is continued in this state, and the movement of the wafer W in the six-degree-of-freedom direction is restricted by the frictional force generated by the suction (holding or supporting) by the bernoulli chuck 124 and the downward support by the vertical movable pins 140. Further, the temperature of the wafer W is continuously controlled by the cooling plate 123.

Next, as shown in fig. 20(D), the main control device 20 controls the driving unit 122 and the pair of vertical movement/rotation driving units 127 to drive the jig main body 130 and the pair of support plates 128 downward. In this case, the wafer W is applied with upward forces to the three vertical pins 140 via the forces of the springs as preliminary pressures. Therefore, the wafer W is pressed downward by driving the chuck body 130 downward, and the three vertical pins 140 are pressed downward against the preliminary pressure. That is, in this way, the wafer W descends together with the chuck body 130 and the three vertical moving pins 140 while maintaining a predetermined gap with respect to the bernoulli chuck 124. Next, after the back surface of the wafer W is brought into contact with the wafer holder (wafer table WTB), main controller 20 releases suction (holding or supporting) of the wafer W by bernoulli chuck 124, and causes the wafer W to be sucked and held by the wafer holder. Thus, the occurrence of warpage of the wafer W can be substantially suppressed or prevented and held by the wafer holder. That is, the bernoulli chuck 124 has not only the conveying function but also the temperature control function and the pre-alignment function described above, and further has the bend correction (correction) function. This warp correcting function is also called a flattening function because the wafer W held by the wafer holder is flattened. Further, although the wafer W held by the bernoulli chuck 124 is maintained flat without being substantially bent, the wafer W may be transferred to the wafer holder by the bernoulli chuck 124 in a state where at least a part of the held wafer W is bent, for example, and as a result, the wafer W held by the wafer holder is prevented or prevented from being bent. Further, a detection device (for example, the above-described gap sensor or the like) may be provided to detect positional information or warp information in the Z direction on the entire surface or a part of the wafer W held by the bernoulli chuck 124, and the main controller 20 may use the detection result to maintain the wafer W held by the bernoulli chuck 124 flat without warping or to generate warping in at least a part of the wafer W. The release of the suction of the wafer W by the bernoulli chuck 124 may be performed before the start of the suction of the wafer W by the wafer holder, but may be performed simultaneously with or after the start of the suction of the wafer W by the wafer holder, for example, for the purpose of correcting (planarizing) the warpage of the wafer W. The main controller 20 may start the suction holding of the wafer W by the wafer holder simultaneously with the release of the support of the wafer W by the three vertical moving pins 140, or may start the suction holding of the wafer W by the wafer holder before the release of the support of the wafer W by the three vertical moving pins 140.

Here, before the bernoulli chuck 124 releases the suction (holding or supporting) of the wafer W, the main controller 20 may apply a downward force to a part or all of the wafer W whose back surface (lower surface) is in contact with the wafer holder (wafer table WTB) from above via the chuck main body 130. Here, the downward force means a force other than gravity. As a method of applying the downward force, for example, it is conceivable to increase the flow rate and/or flow velocity of the gas ejected from the bernoulli chuck 124, or to narrow the GAP (GAP) between the lower surface of the bernoulli chuck 124 and the surface of the wafer W from the previous predetermined GAP when the chuck main body 130 is lowered. In either way, the wafer W is sucked and held by the wafer holder after or while being applied with a downward force. Thereby, the occurrence of warpage of the wafer W held by the wafer holder is substantially suppressed or prevented.

The main controller 20 may control the suction state of the wafer holder so that the wafer holder performs suction holding of the wafer W with a time difference, for example, with a time difference from the peripheral portion to the central portion or with a time difference from one side to the opposite side. Particularly in the latter case, the wafer holder (wafer table WTB) may be tilted in the θ x and/or θ y directions. By combining the suction holding of the wafer W by the wafer holder and the correction of the warp of the wafer W by the bernoulli chuck 124, the wafer W is held by the wafer holder while the warp thereof is substantially suppressed or prevented.

In the present embodiment, during the lowering of the above-described jig main body 130 and the three vertical movable pins 140, the imaging signal of the imaging element 129 is sent to the signal processing system 116 (see fig. 16), and the information on the positional deviation and the rotational error of the wafer W is supplied to the main control device 20 (see fig. 16). In addition, the three vertical moving pins 140 may be driven downward in synchronization with the bernoulli chuck 124 (chuck body 130) or may be driven downward in synchronization with the bernoulli chuck. Particularly, in the latter case, the main controller 20 may planarize the wafer W by making the lowering speed of the three vertical pins 140 different from the lowering speed of the chuck body 130. In this case, for example, the above-described gap sensors are disposed at a plurality of positions of the bernoulli chuck 124, and the main controller 20 may detect a deformation state of the wafer W (for example, a convex shape toward the upper side, a convex shape toward the lower side, or the like) using the plurality of gap sensors, and may make the lowering speed of the three vertical pins 140 different from the lowering speed of the chuck main body 130 based on the detection result.

In the present embodiment, as is clear from fig. 20(a), since the vertical pins 140 are kept raised by a predetermined amount when the wafer table WTB is returned to the loading position LP, wafer loading can be performed in a shorter time than when the vertical pins 140 are accommodated in the wafer holder. Fig. 19 shows a state where wafer W is loaded on wafer table WTB.

In the present embodiment, as shown in fig. 19, the fiducial marks FM set at the loading position LP on the measurement plate 30 are positioned at positions within the visual field (detection region) of the first alignment system AL1 (i.e., at positions where the first half of the baseline measurement (Pri-BCHK) of the first alignment system AL1 is performed).

The first half of the Pri-BCHK treatment means the following treatment. That is, main controller 20 detects (observes) reference mark FM located at the center of measurement plate 30 by first alignment system AL1, and stores the detection result of first alignment system AL1 and the measurement value of fine movement stage position measurement system 110B at the time of the detection in a memory in a corresponding relationship.

In the present embodiment, the first half of the Pri-BCHK process is performed in parallel with at least a part of the wafer W loading operation.

At this time, measurement stage MST is engaged with measurement arm 71A in a state where the back surface (grating RGa) of measurement table MTB faces measurement arm 71A. A liquid immersion area 14 formed by the liquid Lq is formed between the measurement table MTB and the projection optical system PL.

At this time, the wafer (W) on which the previous exposure was completed₀) Is held by the Y-holding portion 177 of the 2 nd unloading slider 170B at a predetermined height position of the standby position UL 2. The wafer W₀Until exposure of the next wafer W is started, and wafer stage WST is retracted from below standby position UL 2.

Next, main controller 20 drives coarse movement stage WCS based on the measurement value of wafer stage position measurement system 16A, and starts the movement operation of wafer stage WST in the + Y direction from loading position LP to exposure station 200 while servo-controlling the position of wafer table WTB based on the measurement value of 2 nd fine movement stage position measurement system 110B. The movement of wafer stage WST in the + Y direction starts, for example, at a position where alignment marks (hereinafter, simply referred to as first alignment marks) attached to three first alignment irradiation regions are detected. At this time, the position of wafer table WTB in the six-degree-of-freedom direction is servo-controlled based on the measurement value of 2 nd fine movement stage position measurement system 110B. Further, coarse movement stage WCS is driven in the XY plane based on the positional information measured by wafer stage position measurement system 16A in any of exposure station 200, measurement station 300, and any area therebetween, but a description thereof will be omitted below.

Next, when wafer stage WST reaches the position shown in fig. 21, that is, the position where the detection beam from light transmission system 90a of measurement plate 30 is irradiated on measurement plate 30 during the movement in the + Y direction, main control device 20 stops wafer stage WST and performs the processing of the first half of focus calibration.

That is, the main controller 20 detects the pair of XZ heads 66X of the 3 rd top encoder system 80C described above₁,66X₂Surface position information of one side and the other side of wafer table WTB in the X-axis direction (scale 39)₁,39₂Z position information) of the measurement plate 30, surface position information of the surface of the measurement plate 30 is detected by using a multi-point AF system (90a,90b) with reference to a reference plane obtained from the information. Thus, a pair of XZ heads 66X are obtained in a state where the center line of wafer table WTB coincides with reference axis LV₁,66X₂The measured value (surface position information of one side and the other side of wafer table WTB in the X-axis direction) of (a) and the detection result (surface position information) of the multi-spot AF system (90a,90b) at the detection point (the detection point located at the center or in the vicinity thereof among the plurality of detection points) on the surface of measurement plate 30.

In the present embodiment, since the position of wafer table WTB that performs the process of the first half of focus calibration described above coincides with the position of wafer table WTB that performs the process of detecting three first alignment marks, main control device 20 uses first alignment system AL1 and second alignment system AL2 in parallel with the process of the first half of focus calibration₂,AL2₃Three first alignment marks (see the star marks in FIG. 21) are detected substantially simultaneously and separately, and the three alignment systems AL1 and AL2 are used₂,AL2₃The detection result of (2) is associated with the measurement value of the 2 nd fine movement stage position measurement system 110B at the time of the detection, and stored in a memory not shown. In this case, the simultaneous detection of the three first alignment marks is performed by changing the Z position of wafer table WTB and changing the plurality of alignment systems AL1 and AL2₁～AL2₄Relative positional relation with the wafer W placed on the wafer table WTB in the Z-axis direction (focus direction). The detection of the alignment mark attached to each alignment irradiation region after the second alignment irradiation region is also the same as described below.

In the case where the position of wafer table WTB for performing the first half of the focus calibration process does not coincide with the position of wafer table WTB for performing the process for detecting the first alignment mark, main controller 20 may perform these processes sequentially in the order in which wafer table WTB reaches the position for performing each process.

Next, movement of wafer stage WST in the + Y direction (for example, stepping movement to detect the positions of alignment marks (hereinafter, simply referred to as second alignment marks) attached to five second alignment irradiation regions) is started by main controller 20.

Next, after wafer stage WST is moved further in the + Y direction to the position shown in fig. 22, five alignment systems AL1 and AL2 are used₁～AL2₄Five second alignment marks (see star marks in FIG. 22) are detected substantially simultaneously and separately, and the five alignment systems AL1 and AL2 described above are used₁～AL2₄The detection result of (2) is associated with the measurement value of the 2 nd fine movement stage position measurement system 110B at the time of the detection, and stored in a memory not shown.

In the present embodiment, as shown in fig. 22, the detection beam from the light transmission system 90a starts to be applied to the wafer W at the position where the second alignment mark is detected. Therefore, it is after the detection of the second alignment mark that the master control device 20 starts using the four-axis readhead 66 of the 3 rd topside encoder system 80C₁、66₂And a focus map of the multi-point AF system (90a,90 b).

Here, the focus map performed by the exposure apparatus 100 according to the present embodiment will be described. In this focus map, the main controller 20 is, for example, as shown in fig. 22, arranged to face the scale 39 in accordance with the direction of each of the scales₁,39₂Two four-axis readhead 66 of the 3 rd topside encoder system 80C₁、66₂Manages the position of wafer table WTB in the XY plane. In the state of fig. 22, a straight line (center line) parallel to the Y axis passing through the center of wafer table WTB (substantially coincident with the center of wafer W) coincides with reference axis LV.

Then, in this state, main control device 20 captures two four-axis heads 66 at predetermined sampling intervals while wafer stage WST is moving in the + Y direction₁、66₂The positional information of both ends (a pair of 2 nd water-repellent plates 28b) in the X-axis direction of the surface (the surface of the plate 28) of each wafer table WTB measured in the Y-axis and Z-axis directions and the positional information (surface positional information) of the surface of the wafer W in the Z-axis direction among the plurality of detected points detected by the multipoint AF system (90a,90b) are stored in a memory (not shown) in order by giving the respective pieces of information acquired in correspondence with each other.

Then, when the detection beams of the multi-spot AF system (90a,90b) do not irradiate the wafer W, the main controller 20 ends the above-described sampling, and converts the surface position information of the detection points of the multi-spot AF system (90a,90b) into the surface position information of the two four-axis heads 66 captured simultaneously₁、66₂The position information in the Z-axis direction of each measurement is used as reference data.

To further detail this, a four axis readhead 66 according to one aspect₁The area near the-X side end of the plate 28 (on which the scale 39 is formed) is obtained as the Z position measurement value₂The 2 nd water paddle 28b) (corresponding to a point on the X axis substantially identical to the arrangement of the plurality of detection points of the multipoint AF system (90a,90 b): hereinafter, this point is referred to as a left measurement point). The other four-axis head 66₁The area near the + X-side end of the plate 28 (where the scale 39 is formed) is obtained as the Z-position measurement value of (2)₁The 2 nd water paddle 28b) (corresponding to a point on the X axis substantially identical to the arrangement of the plurality of detection points of the multipoint AF system (90a,90 b): hereinafter, this point is referred to as a right measurement point). Therefore, the main controller 20 converts the surface position information of each detected point of the multipoint AF system (90a,90b) into surface position data based on a straight line (hereinafter referred to as a table top reference line) connecting the surface position of the left measurement point and the surface position of the right measurement point. The conversion is performed by the master control device 20 for all the information captured during the sampling.

Here, the exposure apparatus 100 of the present embodiment can measure the Y-axis direction, the Z-axis direction, and the θ Y-direction (so as to measure the exposure light) by the 3 rd backside encoder system 70C in parallel with the measurement of the 3 rd topside encoder system 80C described aboveAnd θ z direction) of wafer table WTB (fine movement stage WFS). Therefore, the main controller 20 is similar to the above-mentioned four-axis head 66 with two four axes₁、66₂The measured values of the positions of the two ends of the surface (the surface of the plate 28) of the wafer table WTB in the X-axis direction in the Y-axis direction and the Z-axis direction are also obtained at the same timing as the acquisition of the position information (surface position information) of the surface of the wafer W in the Z-axis direction among the plurality of detected points detected by the multi-point AF system (90a,90b), and the measured values of the positions in the above-mentioned directions (X, Y, Z, θ Y (and θ Z)) by the 3 rd backside encoder system 70C are also obtained. Next, the main controller 20 obtains the relationship between the data (Z, θ y) of the table top reference line obtained from the measurement information of the 3 rd topside encoder system 80C acquired at the same time and the measurement information (Z, θ y) of the 3 rd backside encoder system 70C. Accordingly, the surface position data based on the table top reference line can be converted into surface position data based on a reference line (hereinafter referred to as a back surface measurement reference line for convenience of explanation) corresponding to the table top reference line determined by the Z position and θ y rotation of wafer table WTB measured on the back surface.

By acquiring the conversion data in advance in this manner, the surface of wafer table WTB (on which scale 39 is formed) is measured by XZ heads 64X and 65X described above, for example, during exposure₂And a point on the 2 nd water paddle 28b and a scale 39 formed thereon₁Point on 2 nd water-repellent plate 28b) and the tilt (mainly θ y rotation) of the Z position and the relative XY plane of wafer table WTB. By using the calculated Z position and inclination with respect to the XY plane of wafer table WTB and the surface position data (surface position data based on the table top reference line), the surface position of wafer W can be controlled without actually acquiring surface position information of the surface of wafer W. Therefore, since there is no problem even if the multipoint AF system is disposed at a position away from the projection optical system PL, the focus map of the present embodiment can be applied very suitably even in an exposure apparatus or the like having a narrow working distance (the interval between the projection optical system PL and the wafer W at the time of exposure).

Above, it is not stored on the surface of the wafer table WTBThe description is made on the premise of unevenness. However, a scale 39Y is formed on the surface of the wafer WTB₂And a scale 39Y is formed on the surface of the 2 nd water-repellent plate 28b₁The surface of the 2 nd water deflector 28b has irregularities. However, even when the surface of wafer table WTB has irregularities as described above, the surface position control can be performed with extremely high accuracy at a point on the meridian line of wafer W (a straight line parallel to the Y axis passing through the center of the wafer).

This is because the irradiation region located on the meridian line of wafer W is positioned at the exposure position (in projection optical system PL) when performing focus mapping (when wafer stage WST is moved in the + Y direction), and when performing exposure, etc., wafer stage WST (wafer table WTB) is not moved in the X-axis direction compared to the focus mapping. When the irradiation region on the meridian reaches the exposure position, the detection points are arranged at the position corresponding to the XZ head 66X₁Xz read head 65X at substantially the same X position₃And the detecting point is arranged at the position corresponding to the XZ head 66X₂Xz read head 64X at substantially the same X position₂The XZ read head 66X is detected in a focus map₁And XZ read head 66X₂Surface position information of points substantially identical to each other on wafer table WTB for detecting surface position information. That is, the reference surfaces (surfaces formed by connecting the table top reference lines in the Y-axis direction) measured by the pair of XZ heads serving as the surface position information detection references of the multipoint AF systems (90a,90b) are the same at the time of focus mapping as at the time of exposure. Therefore, even if unevenness, undulation, or the like occurs on the surface of wafer table WTB, the Z position obtained in the focus map can be used as the Z position without considering the unevenness, undulation, or the like in exposing the irradiation region on the meridian, and the focus control of the wafer can be performed in the exposure, so that the focus control with high accuracy can be performed.

Similarly, when the irradiation region on the meridian reaches the exposure position, three-dimensional head 73a whose detection point is set on a straight line (reference axis LV) parallel to the same Y axis as that of YZ head 77a and three-dimensional head 73b whose detection point is set on a straight line parallel to the same Y axis as that of YZ head 77b are detected, the Z position of the same point on grating RG as that at which YZ head and YZ head detect surface position information at the time of focus mapping is detected, and based on the detection result, Z and θ Y are calculated. That is, a surface (hereinafter referred to as a back surface measurement reference surface) in which the back surface measurement reference line is continuous in the Y axis direction as a surface position information detection reference of the multipoint AF system (90a,90b) is calculated from a measurement value of the Z position of the same point at the time of focus mapping and at the time of exposure.

When the surface of wafer table WTB is not uneven or undulated during exposure of the irradiation region other than on the meridian, the focus control accuracy can be ensured to the same extent as that of the irradiation region on the meridian, but when the surface of wafer table WTB is uneven or undulated, the focus control accuracy depends on the accuracy of a wire check (traversecheck) described later.

In the present embodiment, when wafer stage WST reaches the position where the second alignment mark is detected, the detection beam from light transmission system 90a starts to be applied to wafer W, and the focus map starts at that position. However, when the detection beam from light transmission system 90a starts to be irradiated onto wafer W before or after wafer stage WST reaches the position where the second alignment mark is detected, the focus mapping may be started at a point of time when the detection beam starts to be irradiated onto wafer W before or after the second alignment mark is detected.

Returning to the description of the parallel operation. When wafer stage WST reaches the position shown in fig. 23 by the movement of wafer stage WST in the + Y direction, which is the focus map, as described above, main control device 20 stops wafer stage WST at that position. Next, master control device 20 uses, for example, five alignment systems AL1, AL2₁～AL2₄Alignment marks (hereinafter, simply referred to as "third alignment marks") provided in five third alignment irradiation regions are detected substantially simultaneously and individually (see the star marks in fig. 23), and the five alignment systems AL1 and AL2 are used₁～AL2₄The detection result of (2) is associated with the measurement value of the 2 nd fine movement stage position measurement system 110B at the time of the detection and stored in a memory not shown. At this time, the process also continuesAnd then carrying out focusing mapping.

Next, main controller 20 starts moving wafer stage WST in the + Y direction to a position for detecting alignment marks (hereinafter simply referred to as first alignment marks) attached to, for example, three first alignment irradiation areas. The focus mapping is continued at this point.

When wafer stage WST reaches the position shown in fig. 24, main controller 20 immediately stops wafer stage WST and uses first alignment system AL1 and second alignment system AL2₂,AL2₃Three first alignment marks (see the star marks in fig. 24) attached to the wafer W are detected substantially simultaneously and respectively, and the three alignment systems AL1 and AL2 are used₂,AL2₃The detection result of (2) is associated with the measurement value of the 2 nd fine movement stage position measurement system 110B at the time of the detection and stored in a memory not shown.

Next, main controller 20 calculates EGA parameters (X offset, Y offset, orthogonality, wafer rotation, wafer X calibration, wafer Y calibration, etc.) by performing statistical calculation using the detection results of the total of sixteen alignment marks obtained as described above and the corresponding measurement values of 2 nd fine movement stage position measurement system 110B by using, for example, the EGA method disclosed in U.S. patent No. 4,780,617.

After the above-described wafer alignment (the process up to at least the position measurement of the first alignment mark) is completed, main controller 20 moves wafer stage WST to the position shown in fig. 27, that is, the start position of a state where wafer stage WST and measurement stage MST are in contact with each other in the Y-axis direction or are close to each other with a separation distance of, for example, about 300 μm (hereinafter, referred to as a contact or close state). This movement is performed by main controller 20 moving wafer stage WST at a high speed in the + Y direction with a long stroke while the liquid is not in contact with wafer table WTB. During this movement, since wafer stage WST deviates from the measurement range of 2 nd fine movement stage position measurement system 110B, main controller 20 switches the measurement system for servo control of the position of wafer table WTB from 2 nd fine movement stage position measurement system 110B to 4 th topside encoder system 80D.

Main controller 20 continues the focus mapping immediately after the start of the high-speed movement of wafer stage WST in the + Y direction in the long stroke. Next, when the detection beams from the multipoint AF system (90a,90b) are deviated from the surface of the wafer W, the focus map is ended as shown in fig. 25.

In the above-described process of performing alignment measurement and focus mapping while linearly moving wafer stage WST in the + Y direction (hereinafter referred to as a STREAM (STREAM) process), main controller 20 performs the coordinate system update of second backside encoder system 70B and the coordinate system update of second topside encoder system 80B, in the same manner as the coordinate system update of first backside encoder system 70A and the coordinate system update of second topside encoder system 80A described above.

Now, the posture of wafer table WTB at measurement station 300 is governed at the time of alignment or the like, and is referred to as the 2 nd backside encoder system 70B. However, for the same reasons as previously described for the 1 st backside encoder system 70A, the long term stability in the six degree of freedom direction of the coordinate system of the 2 nd backside encoder system 70B cannot be expected. However, the overall variation in the position in the θ y direction (roll amount) and the position in the θ z direction (yaw amount) affects the alignment measurement result. Therefore, main controller 20 starts POST STREAM (POST STREAM) processing described next at the time of end STREAM (STREAM) processing in the high-speed movement in the + Y direction of long-stroke wafer stage WST, and performs alignment calculation using the POST STREAM processing result (calculation of the array coordinates of all the shot areas on the wafer using the EGA parameters) and correction of the back surface measurement reference surface included in the focus map result.

Here, the post-stream processing means an arithmetic process of replacing the following error factor parameters a to c included in the EGA result and the result of the focus map with θ y, θ z, and the X-axis direction scaling offset described with the following d.

a. Bias of global θ y: the position of the wafer stage in the θ y direction (θ y rotation amount) contained in the focus mapping result by measurement using the back surface of the 3 rd backside encoder system 70C;

b. bias of global θ z: orthogonality contained in the EGA parameters/rotation of the wafer;

c. overall X-axis direction scaling bias: scaling the X-axis direction of the wafer contained in the EGA parameters;

d. the 2 nd top encoder system 80B and the 3 rd top encoder system 80C scale the offsets in the θ y, θ z, and X-axis directions calculated from the average of all data observed in the stream processing.

Here, the X-axis direction calibration is to align the XZ head 67X used for measurement₂,68X₂Interval XZ read head 67X₃,68X₃The distance (axial interval) between them is constant, and based on this, the XZ head 67X is used as a reference₂,68X₂Or 67X₃,68X₃Measuring the scale 39 of the 2 nd topside encoder system 80B mated to each other that has been made to the coordinate system of the 2 nd backside encoder system 70B₁,39₂The grid interval of (2) is scaled in the X-axis direction by the magnification of the grid interval with respect to the reference.

The result of the post-stream processing is not used for the scale 39₁,39₂The measurement at a particular point on, to reset the attitude of wafer table WTB, but will be from that at scale 39₁,39₂The average posture of wafer table WTB averaged over the entire measurement results is used for alignment calculation (calculation of the arrangement coordinates of all the irradiated regions on the wafer using the EGA arithmetic expression in which the degree of orthogonality/rotation of the wafer, and the X-axis direction scale of the wafer are replaced with θ z of d. The result of this alignment operation can be used in the scale 39 by averaging₁,39₂The measurement of a specific point on the surface of the body to make the posture reset situation more reliable.

The reason why the position measurement in the θ z direction and the θ y direction in the stream processing is performed not only by using the top-side encoder system is as follows.

e. In this way, alignment (and focus mapping) is only the top-side encoder system, while exposure is the center of the backside encoder system, resulting in a completely different reference for both (though already coordinated).

f. Even if the width of the band is narrow (the band having the same width as the distance between the detection points of the three-dimensional heads 75a and 75b in the X axis direction), it is conceivable that the backside encoder system is preferably used for alignment.

g. The accuracy of the coordinate system updating process of the backside encoder system can be expected. As a result, the accurate mesh and flat plane can be maintained at any time. In this case, even when measuring a narrow band-shaped portion, it is preferable to use the backside encoder system as a reference as long as the offsets θ y and θ z can be removed.

h. The topside encoder system reflects the information of the backside encoder system, but is not complete in accuracy.

Next, a wire check (transition check) will be described. First, error factors specific to stream processing, which are main factors necessary for wire check, will be described.

In the flow processing, as is clear from the above description, since wafer stage WST moves on a straight line parallel to the Y axis, it is not possible to acquire positional information (X, Y, Z) of the wafer stage (fine movement stage WFS) at different points in the X axis direction. Therefore, even in the updating of the coordinate system of the 2 nd backside encoder system 70B, the above Δ X/X, Δ Y/X, and Δ Z/X cannot be obtained. That is, at the time of exposure, the coordinate system is updated in real time as a whole by the above-described updating of the coordinate system of the 1 st backside encoder system 70A, and the grid error is corrected in real time as a whole of the coordinate system, whereas, at the time of alignment, even if the coordinate system of the 2 nd backside encoder system 70B is updated, the coordinate system is not updated except for a portion on a straight line in the Y-axis direction passing through the center in the X-axis direction of the wafer, and as a result, the portion of the grid error other than the straight line is not corrected in real time. As a result, an error occurs in the alignment coordinate system for managing the position of the wafer stage during alignment and the exposure coordinate system for managing the position of the wafer stage during exposure. That is, this is an error factor specific to stream processing.

Therefore, the main controller 20 performs wire check as described below at a predetermined frequency (frequency as necessary) while processing 25 or 50 wafers in a lot.

During wire verification, main controller 20 controls the six-degree-of-freedom direction position of wafer stage WTB based on the measurement values of 2 nd fine movement stage position measurement system 110B such that wafer stage WST is within a predetermined range in the X-axis direction (the center line of wafer stage WTB is within a predetermined width around reference axis LV (relative to scale 39) when wafer stage WST reaches the position shown in fig. 28 in the Y-axis direction in the above-described flow process₁,39₂Width and alignment system AL2₁、AL2₄The width of the detection regions having a wide distance from each other) within the range of displacement in the X-axis direction) and using five alignment systems AL1 and AL2₁～AL2₄The same alignment marks located near the center of the wafer W are measured sequentially. Further, main controller 20 simultaneously captures the areas of the surfaces of a pair of 2 nd water-repellent plates 28b of wafer table WTB (scale 39) at predetermined sampling intervals during the movement of wafer stage WST in the X-axis direction₁,39₂Surface) of the substrate, a pair of XZ heads 66X for surface position information₁、66X₂And the surface position information of the wafer W detected by the multipoint AF system (90a,90 b).

With such wire verification, the coordinate systems of the 2 nd micro-motion stage position measurement system 110B (the coordinate system of the 2 nd topside encoder system 80B and the coordinate system of the 2 nd backside encoder system 70B) and the multi-point AF systems (90a,90B) and the alignment systems AL1, AL2 can be calibrated₁～AL2₄The relationship (2) of (c). Specifically, the following is described.

A. By the movement of wafer stage WST in the X-axis direction within the predetermined range described above, position information (X, Y, Z) of wafer table WTB (fine movement stage WFS) at different points in the X-axis direction can be obtained, and even in the updating of the coordinate system of 2 nd backside encoder system 70B, Δ X/X, Δ Y/X, Δ Z/X described above can be obtained, and as a result, the updating of the coordinate system of 2 nd backside encoder system 70B and the updating of the coordinate system of 2 nd topside encoder system 80B based thereon result in higher accuracy.

B. The first and second alignment systems AL1 and AL2 are measured by the same alignment marks located near the center of the wafer W as described above₁～AL2₄The second alignment system AL2, which is the positional relationship of the detection centers of₁～AL2₄The base line of (1) is obtained on the coordinate system of the 2 nd fine movement stage position measurement system 110B.

C. Determining surface position information for each detection point of a multi-point AF system (90a,90b) at different sampling times and a pair of XZ heads 66X simultaneously acquired₁、66X₂And from the plurality of relationships obtained, scale 39 is obtained on the coordinate system of 2 nd fine movement stage position measurement system 110B₁,39₂Unevenness of the surface in the X-axis direction. However, in order to accurately determine this scale 39₁,39₂The irregularities of the surface in the X-axis direction, the multi-spot AF system (90a,90b) must adjust the offset between the sensors in advance.

Subsequently, the main controller 20 uses the second alignment system AL2 described above in exposure described below₁～AL2₄The base line of (2) performs alignment of the wafer table WTB with respect to the exposure position, and performs focus control of the wafer W while adding information on the unevenness of the scale surface in the X-axis direction or the like as a correction amount.

That is, in the present embodiment, main controller 20 corrects the positional error of wafer table WTB due to the error factor peculiar to the above-described flow process by actually moving wafer stage WST in the X-axis direction in the above-described manner.

In parallel with the post-stream processing described above, as indicated by the dashed arrows in FIG. 25As shown, the next wafer (referred to as wafer W) is processed in the following order₁) And a step of loading the workpiece under the jig unit 120.

As a precondition for starting wafer loading, as shown in fig. 25, wafer stage WST on which wafer W before exposure is mounted is located at a position completely separated from loading position LP (position on the + Y side of loading position LP). At this time, the pair of support plates 128 are positioned at the 2 nd rotation position as shown in fig. 26 (a).

First, the main controller 20 drives the wafer transfer arm 132 to transfer a new (pre-exposure) wafer W₁The space between the pair of drive shafts 126 located below the bernoulli gripper 124 in the loading position LP is carried in from an external device (see fig. 26 a).

Then, the main control device 20 controls the driving unit 122 and the wafer transfer arm 132 of the chuck unit 120 to drive at least one of the chuck main body 130 and the wafer transfer arm 132 in the Z-axis direction to the bernoulli chuck 124 and the new wafer W₁A predetermined distance, for example, about several μm (see white arrows in fig. 26 a). At this point, the bernoulli gripper 124 and a new wafer W₁The distance (c) is measured by the above-mentioned gap sensor (not shown).

In the bernoulli chuck 124 and a new wafer W₁After the predetermined distance is reached, as shown in fig. 26(B), the main controller 20 adjusts the flow rate of the air blown out from the bernoulli chuck 124 so that the bernoulli chuck 124 and the new wafer W are brought into contact with each other₁A predetermined distance (gap) is maintained. Thus, the wafer W passes through the gap (clearance) of about several μm₁Is held by suction in a non-contact manner from above by the bernoulli gripper 124. The wafer W is held by suction by the Bernoulli chuck 124₁Then, the wafer W₁Is adjusted to a predetermined temperature through the cooling plate 123.

On the wafer W₁After being sucked and held by the bernoulli chuck 124, as shown in fig. 26(C), the main control device 20 rotates the pair of support plates 128 and the shaft 126 to the 1 st rotation position integrally via the pair of vertical movement/rotation driving units 127, and rotates the chuck main body 130 and the pair of support plates 128 in the Z-axis directionThe wafer W is relatively driven by a predetermined amount in a direction of approaching the pair of support plates 128₁Is supported in contact with the back surface of the body.

Subsequently, as shown in fig. 26(D), the main controller 20 causes the wafer transfer arm 132 to move the wafer W from the wafer W₁And is separated from the loading position LP and retracted. At this time, a new wafer W₁Movement in the six degree of freedom direction is limited by the bernoulli gripper 124 and a pair of support plates 128. Further, the slave wafer W of the wafer carrying arm 132₁And a pair of support plates 128 for the wafer W₁The order of contacting may be reversed. Whichever the case may be, the wafer W₁The supporting state is maintained until the exposure of the front wafer W is completed, the wafer stage WST is returned to the loading position LP, and the wafer W is placed on the wafer stage₁Until loading of (2) is started.

The explanation returns to the parallel processing operation again. By the high-speed movement of wafer stage WST in the + Y direction with the long stroke described above, wafer stage WST reaches the position shown in fig. 27, that is, moves to a state where measurement stage MST is in contact with or close to wafer stage WST. In this contact or close state, the-Y side end surface of measurement table MTB is in contact with or close to the + Y side end surface of wafer table WTB. Main controller 20 drives both stages WST and MST in the + Y direction while maintaining the contact or proximity state. With this movement, water in liquid immersion area 14 moves from measurement table MTB onto wafer table WTB.

Next, when the two stages WST, MST reach the position where the measurement plate 30 shown in fig. 29 is disposed immediately below the projection optical system PL, the main controller 20 stops the two stages WST, MST, and performs the processing of the second half of Pri-BCHK and the processing of the second half of focus calibration.

Here, the second half of the Pri-BCHK processing means processing for measuring a projected image (aerial image) of a pair of measurement marks on the reticle R (or a mark plate (not shown) on the reticle stage RST) projected by the projection optical system PL using the aerial image measuring apparatus 45 including the measurement plate 30. In this case, for example, similar to the method disclosed in U.S. patent application publication No. 2002/0041377, the aerial image measuring operation of the slit scanning method using the pair of aerial image measuring slit patterns SL measures the aerial images of the pair of measuring marks, respectively, and stores the measurement results (the aerial image intensities corresponding to the XY positions of wafer table WTB) in the memory. During the second half of the Pri-BCHK processing, the position of wafer table WTB in the XY plane is measured and controlled based on the measurement value of first fine movement stage position measurement system 110A.

The second half of the focus calibration process means that a pair of XZ heads 65X for measuring surface position information of the end portions of wafer table WTB on one side and the other side in the X axis direction are used₂,64X₃And a process of measuring an aerial image of the measurement mark on the reticle R by a slit scanning method using the aerial image measuring apparatus 45 while controlling the position (Z position) of the measurement plate 30 (wafer table WTB) in the optical axis direction of the projection optical system PL based on the measured surface position information, and measuring the best focus position of the projection optical system PL based on the measurement result.

At this time, since the liquid immersion area 14 is formed between the projection optical system PL and the measurement plate 30 (wafer table WTB), the aerial image is measured through the projection optical system PL and the liquid Lq. Since measurement board 30 and the like of aerial image measurement apparatus 45 are mounted on wafer stage WST (wafer table WTB) and the light-receiving element and the like are mounted on measurement stage MST, the aerial image is measured while keeping wafer stage WST in contact with or close to measurement stage MST.

By the measurement, a pair of XZ heads 65X is obtained in a state where the center line of wafer table WTB coincides with reference axis LV₂,64X₃That is, surface position information of one side and the other side of wafer table WTB in the X-axis direction. This measurement value corresponds to the best focus position of the projection optical system PL.

After performing the processing of the second half of Pri-BCHK and the processing of the second half of focus calibration, the main controller 20 calculates the basis of the first alignment system AL1 from the result of the processing of the first half of Pri-BCHK and the result of the processing of the second half of Pri-BCHKA wire. At the same time, main controller 20 aligns the center line of wafer table WTB obtained by the first half of the focus calibration process with reference axis LV, and then, based on a pair of XZ heads 66X₁,66X₂A relationship between the measured value (surface position information of one side and the other side of wafer table WTB in the X-axis direction) of (a) the measurement result (surface position information) of the multi-spot AF system (90a,90b) at the detection point (the detection point located at the center or in the vicinity thereof among the plurality of detection points) on the surface of measurement plate 30, and a pair of XZ heads 65X in a state where the center line of wafer table WTB corresponding to the best focus position of projection optical system PL obtained by the above-mentioned processing of the latter half of focus calibration coincides with reference axis LV₂,64X₃The offset in the representative detection point of the multipoint AF system (90a,90b) is obtained, and the detection origin of the multipoint AF system is adjusted to zero by the above-mentioned optical method.

In this case, from the viewpoint of improving the throughput, only one of the processing of the second half of the Pri-BCHK and the processing of the second half of the focus calibration may be performed, or the process may be shifted to the next processing without performing both the processing. Of course, in the case where the second half of the Pri-BCHK process is not performed, the first half of the Pri-BCHK process described above does not need to be performed.

After the above operation is completed, as shown in fig. 30, main controller 20 drives measurement stage MST in the + X direction and the + Y direction, and releases both stages WST, and thereby the state where MST is in contact with or close to each other.

Subsequently, the main controller 20 performs exposure by the step-and-scan method to transfer the reticle pattern onto a new wafer W. This exposure operation is based on the result of the wafer alignment (EGA) performed in advance by the main controller 20 (from the scale 39 described above)₁,39₂The average posture obtained by averaging the entire measurement results is used for the alignment calculation to calculate the arrangement coordinates of all the irradiated regions on the wafer W), and the alignment system AL1 (and AL 2)₁～AL2₄) The latest baseline of (3) and the like, repeatedly irradiating wafer stage WST onto wafer WThe inter-irradiation movement operation in which the scanning start position (acceleration start position) of the area exposure is moved, and the scanning exposure operation in which the pattern formed on the reticle R is transferred to each irradiation area by the scanning exposure method are performed. The exposure operation is performed in a state where the liquid (water) Lq is held between the front end lens 191 and the wafer W.

In the present embodiment, for example, since the 1 st irradiation region of the first exposure is set to the irradiation region located at the + Y end portion of the-X side half portion of wafer W, wafer stage WST is first moved in the + X direction and the + Y direction as indicated by the black arrow in fig. 30 in order to move to the acceleration start position.

Next, the areas in the-X-side half of the wafer are exposed in the order of the + Y-side irradiation area to the-Y-side irradiation area while moving wafer stage WST along the path indicated by the black arrow in fig. 31.

In order to expose the area in the-X-side half of the wafer, wafer stage WST moves in the + Y direction along the path indicated by the black arrow in fig. 31, and thereafter, exposed wafer W is held at standby position UP2₀The Y-holding portion 177 of the 2 nd unload slider 170B is lowered without interfering with the wafer stage WST. Therefore, at this point in time, the main controller 20 holds the wafer W held by the Y-shaped holding part 177 as shown in fig. 32(a)₀The wafer is transferred to a transfer position with the wafer transfer system in the following order.

That is, the main controller 20 holds the wafer W₀The Y-shaped holding portion 177 of (a) is driven downward by a predetermined amount by the 2 nd unload slider driving system 180B as indicated by a black arrow in fig. 32B, and then driven along the 1 st arm 171 in the-Y direction as indicated by a black arrow in fig. 32C (see a white arrow in fig. 31). During the driving, when the wafer W is in the middle of the driving₀After reaching the position shown by the dotted line in FIG. 31, the wafer W is held₁There is no concern about reading the head 62E or the like. Therefore, after this point in time, the main controller 20 holds the wafers W via the 2 nd unloading slide drive system 180B while the wafers W are held as indicated by two black arrows in fig. 32(D)₀The Y-shaped holding part 177 moves up by a predetermined amount and moves to a transfer position with the wafer carrier system. In this way, the wafer W₀Is transported to a transfer position with respect to the wafer transport system.

And the above-mentioned wafer W₀In parallel with the conveyance to the transfer position, main control device 20 exposes the + X-side half area of wafer W in the order from the-Y-side irradiation area to the + Y-side irradiation area while moving wafer stage WST along the path indicated by the black arrow in fig. 33 and 34. Accordingly, wafer stage WST returns to substantially the same position as the position before the start of exposure when exposure of all the shot areas on wafer W is completed.

In the present embodiment, the above-described exposure sequence of the irradiation regions is adopted, but in the case where the entire length of the path through which wafer stage WST moves to perform the exposure is set to expose wafers of the same size in accordance with the same irradiation pattern, there is no big difference from, for example, a conventional liquid immersion scanner disclosed in U.S. patent application publication No. 2008/0088843 and the like.

In the above exposure, the measurement values of the 1 st fine movement stage position measurement system 110A, that is, the measurement values are made to face the scale 39 respectively₁,39₂The measurement values of the four-axis heads 65 and 64, that is, the measurement result (measurement value of the position) of the position information in the six-degree-of-freedom direction by the 1 st top side encoder system 80A and the measurement result (measurement value of the position) of the position information in the six-degree-of-freedom direction by the 1 st back side encoder system 70A, which have high reliability, are supplied to the main controller 20 as the combined position signal, and the servo control of the position of the wafer table WTB is performed based on the position information of the wafer table WTB in the six-degree-of-freedom direction obtained from the combined position signal. The control of the Z-axis direction position, the θ y rotation, and the θ x rotation of wafer table WTB (focus leveling control of wafer W) in this exposure is based on the result of the above-described focus map (surface position information based on the scale reference surface or surface position information based on the back surface measurement reference surface corrected using the post-flow processing result) performed in advance) To proceed with.

The main controller 20 updates the coordinate system of the 1 st backside encoder system 70A using the differential measurement of the measurement values of the redundant axes at predetermined sampling intervals during exposure, and matches the scale 39 of the 1 st topside encoder system 80A with the coordinate system of the 1 st backside encoder system 70A that has been updated at least once₁,39₂The coordinate system of the grid of (a).

In the step-and-scan exposure operation described above, after wafer stage WST moves in the X-axis direction, the head of top-side encoder system 80A 1 st (i.e., the connection of the measurement values between the heads) is switched in accordance with the movement. In this manner, main controller 20 performs stage control by appropriately switching the encoder of 1 st topside encoder system 80A to be used, in accordance with the position coordinates of wafer stage WST.

The exposed wafer W transferred to the transfer position is exposed in parallel with the exposure of the irradiation region of the + X side half of the wafer W₀The wafer is transferred to a wafer transfer system (not shown) by a transfer robot (not shown) for carrying out the wafer from the apparatus.

After the exposure of wafer W is completed, main controller 20 drives measurement stage MST in the XY plane as indicated by the white arrow in fig. 34 based on the measurement values of measurement stage position measurement system 16B, and moves wafer stage WST and measurement stage MST separated from each other during the exposure to the above-described contact or close state. During this travel in the contact or close state, measurement stage MST is engaged with measurement arm 71A from the lateral side (side). Since measurement arm 71A can be engaged with the lateral side of measurement stage MST, measurement table MTB of measurement stage MST is cantilever-supported by support portion 62 on slider portion 60.

Next, as shown in fig. 35, main controller 20 moves both stages WST and MST in the-Y direction while maintaining the above-described contact or proximity. Thereby, liquid immersion area 14 (liquid Lq) formed under projection unit PU is moved (transferred) from wafer table WTB to measurement table MTB.

At the end of the transfer of liquid immersion area 14 (liquid Lq) from wafer table WTB to measurement table MTB, main controller 20 can control the position of measurement table MTB via measurement table drive system 52B (see fig. 16) based on the measurement value of 1 st backside encoder system 70A using grating RGa provided on the back surface of measurement table MTB. Therefore, the main controller 20 can perform a measurement operation related to a desired exposure while controlling the position of the measurement table MTB in the six-degree-of-freedom direction.

Immediately before liquid immersion area 14 (liquid Lq) moves from above wafer table WTB to above measurement table MTB after the movement to the above-described contact or proximity state is completed, wafer stage WST is out of the measurement range of 1 st fine movement stage position measurement system 110A, and the position of wafer table WTB cannot be measured by 1 st top side encoder system 80A and 1 st back side encoder system 70A. Immediately before that, main controller 20 switches the position measurement system for servo control of the position of wafer table WTB from 1 st fine movement stage position measurement system 110A to 4 th top encoder system 80D (three-dimensional reading head 79)₁、79₂)。

Thereafter, wafer stage WST is driven to unload position UP1 by main controller 20. Thus, after the contact or proximity state is released, wafer stage WST moves to unload position UP 1. This movement is performed in a state where the liquid Lq is not in contact with the wafer table WTB, and therefore can be performed in a short time by high acceleration, for example, two-stage acceleration. After wafer stage WST reaches unload position UP1, main controller 20 unloads exposed wafer W from wafer stage WST in the following order.

That is, after the main controller 20 releases the adsorption of the wafer holder to the exposed wafer W, the three vertical pins 140 are driven upward by a predetermined amount to hold the wafer W as indicated by black arrows in fig. 36 (a). The positions of three vertical moving pins 140 at this time are maintained until wafer stage WST reaches loading position LP and loading of the next wafer is started.

Next, the main control device 20 drives the wafer gripping portion 174 of the 1 st unloading slider 170A downward by a predetermined amount as indicated by a white arrow in fig. 36(B) via the 1 st unloading slider drive system 180A. Thus, the main body 174a of the wafer holding portion 174 approaches the wafer W to a position at a predetermined distance. At this time, the four grip portions 174b of the wafer grip portion 174 are opened. Therefore, the main control device 20 closes the four gripping portions 174b via the 1 st unloading slide driving system 180A as indicated by black arrows in fig. 36(C), and raises and drives the wafer gripping portions 174 to predetermined height positions as indicated by white arrows in fig. 36 (D). Thereby, the wafer W is held by the four holding portions 174b of the wafer holding portion 174 in a state of supporting the periphery of the back surface from below. Thereby, the unloading of the wafer W is completed.

Next, as shown in fig. 37, main controller 20 linearly drives wafer stage WST to loading position LP at high speed in long steps. During this driving, wafer stage WST is out of the measurement range and the position of wafer table WTB cannot be measured by 4 th topside encoder system 80D. Therefore, main controller 20 switches the position measurement system used for servo control of the position of wafer table WTB from 4 th topside encoder system 80D to 2 nd fine movement stage position measurement system 110B before wafer stage WST deviates from the measurement range of 4 th topside encoder system 80D.

In parallel with the movement of wafer stage WST to loading position LP, main controller 20 moves wafer W held by wafer gripping unit 174 of first unloading slider 170A to standby position UP2 at a predetermined height position of unloading position UP1 as indicated by the white arrow in fig. 37. This movement is performed by the main control device 20 in the following order.

That is, as shown by a black arrow in fig. 38(a), the main controller 20 moves the 1 st unload slider 170A holding the wafer W by the wafer holding portion 174 along the 2 nd arm 172 via the 1 st unload slider driving system 180A to a position directly above the Y-holding portion 177 located in the vicinity of the lower limit movement position of the standby position UP 2. Next, as indicated by a black arrow in fig. 38(B), the main controller 20 drives the wafer holding portion 174 holding the wafer W downward through, for example, the 1 st unload slider driving system 180A until the back surface of the wafer W contacts the suction portion of the Y-shaped holding portion 177. Alternatively, the main control device 20 may drive the Y-shaped holding portion 177 upward through, for example, the 2 nd unloading slider drive system 180B until the suction portion of the Y-shaped holding portion 177 comes into contact with the back surface of the wafer W held by the wafer holding portion 174.

Next, after the back surface of the wafer W contacts the suction portion of the Y-holding portion 177, the main control device 20 opens the four gripping portions 174b via the 1 st unload slider driving system 180A as indicated by white arrows in fig. 38(C), and drives the wafer gripping portions 174 upward by a predetermined amount as indicated by black arrows in fig. 38 (D). Thereby, the wafer W is transferred from the wafer holding portion 174 to the Y-holding portion 177.

Thereafter, the main controller 20 returns the 1 st unload slider 170A (wafer holding part 174) to the standby position UP2 via the 1 st unload slider driving system 180A as indicated by a black arrow in fig. 38(E), and raises the Y-shaped holding part 177, which suctions and holds the wafer W from below, to a predetermined height position of the standby position UP2 as indicated by a white arrow in fig. 38 (E). Wafer W is held at a predetermined height position at standby position UP2 by Y-shaped holding unit 177 until exposure of the next wafer starts and wafer stage WST is retracted from below standby position UP 2.

Thus, a series of (one cycle of) processes for one wafer W is completed, and the same operation is repeatedly performed thereafter.

As described above in detail, the exposure apparatus 100 according to the present embodiment includes the fine movement stage WFS having a not-shown wafer holder that holds a wafer to be placed and is movable along the XY plane, the chuck unit 120 having the chuck main body 130 that holds the wafer from above in a non-contact manner and is movable vertically above the loading position LP, and the vertical movement pin 140 that is provided on the fine movement stage WFS and is movable vertically while supporting the wafer from below. The chuck unit 120 includes a pair of support plates 128 for holding a wafer held in a noncontact manner from above by the chuck main body 130 (bernoulli chuck 124) in contact with a portion other than the upper surface (e.g., the lower surface (back surface)) thereof before supporting the wafer from below by the three vertical moving pins 140.

Before loading a wafer on wafer table WTB, main control apparatus 20 brings a pair of support plates 128 into contact with a part of the lower surface (back surface) thereof while holding the wafer from above in a non-contact manner by a chuck main body 130 (bernoulli chuck 124) above loading position LP. Thereby, the movement of the chip is limited in the direction of six degrees of freedom. Then, chuck unit 120 maintains this state until wafer stage WST returns to loading position LP.

Next, after wafer stage WST is returned to loading position LP, main controller 20 supports the wafer held by chuck main body 130 (bernoulli chuck 124) from below by three vertical movable pins 140, and releases the contact holding of the pair of support plates 128 with respect to the wafer. Immediately thereafter, main controller 20 lowers chuck body 130 and three vertical pins 140 until the lower surface of the wafer comes into contact with a wafer holder (vacuum chuck or the like), not shown, on fine movement stage WFS (wafer table WTB) while maintaining the wafer holding state by chuck body 130 (bernoulli chuck 124) and the wafer supporting state by three vertical pins 140, and releases the support of three vertical pins 140 of the wafer and the wafer holding by chuck body 130 (bernoulli chuck 124) at the stage when the lower surface of the wafer comes into contact with the wafer holder (vacuum chuck or the like).

Therefore, according to the exposure apparatus 100, the wafer can be carried into the wafer table WTB without positional deviation (with good reproducibility) while maintaining high flatness. When the wafer is exposed, the main controller 20 drives the fine movement stage WFS based on the position information measured by the 1 st fine movement stage position measurement system 110A. Therefore, it is possible to perform high-precision exposure of a wafer carried onto the fine movement stage WFS without positional deviation while maintaining high flatness.

In the exposure apparatus 100 according to the present embodiment, the holder main body 130 includes the bernoulli holder 124 that holds the wafer in a non-contact manner and the cooling plate 123 that controls the temperature of the wafer, and the temperature of the wafer is adjusted to the target temperature until the holding of the holder main body 130 is released. Thus, the controlled temperature state of the target temperature of the wafer is continued until the end of the transfer to the wafer table WTB.

The exposure apparatus 100 includes a measurement system including three image pickup devices and a signal processing system 116, which are provided in the jig main body 130 and measure positional information (center position (offset) and rotational position (offset)) of the wafer, and during the lowering operation of the jig main body 130, the positional information of the wafer is measured by the measurement system including the three image pickup devices and the signal processing system 116 until the lower surface of the wafer comes into contact with a wafer holder (vacuum jig or the like). Thus, even at the moment when the wafer is loaded on wafer table WTB, the positional deviation and the rotational error of the wafer can be measured, and main controller 20 can realize more accurate positional control (including positioning) of wafer W at the time of alignment and/or exposure by adding the measurement information as correction information of the wafer position.

Further, according to exposure apparatus 100 of the present embodiment, wafer stage WST is moved in the + Y direction from loading position LP set on one side (the Y side) in the Y axis direction of metrology station 300 to exposure station 200, and passes through a plurality of alignment systems AL1 and AL2 on the way to the movement path₁～AL2₄For detecting a plurality of (e.g., sixteen) alignment marks on a wafer, the projection optical system PL is connected to a plurality of alignment systems AL1, AL2₁～AL2₄The positional relationship in the Y-axis direction of (a) is set so that no part of wafer stage WST contacts liquid immersion area 14 until the end of detection of the plurality of marks. Further, the flow process including the above-described focus map in addition to the above-described alignment measurement is performed without the liquid contacting wafer table WTB, and therefore, the flow process can be performed while moving wafer table WTB (wafer stage WST) at a high speed and at a high acceleration.

Further, since the unload position UP1 is set between the exposure position and the alignment position, the exposed wafer can be unloaded from the wafer table WTB immediately after the exposure of the wafer is completed, and then returned to the load position LP. After the exposure is completed, wafer table WTB returns to unloading position UP1 and further returns to loading position LP after liquid immersion area 14 (liquid Lq) is transferred to measurement table MTB. Therefore, the movement of wafer table WTB at this time can be performed at high speed and high acceleration. Further, since the loading position LP is set on a straight line connecting the exposure position and the alignment position and the first half process of Pri-BCHK is performed at this position, the flow process (alignment measurement and focus map) can be started immediately after the wafer is loaded on the wafer table WTB.

Further, since the exposure sequence of the plurality of shot areas on the wafer W is such that the shot areas on the + Y side are sequentially exposed from the-Y side of the + X side half portion (or the-X side half portion), and then the shot areas on the-Y side are sequentially exposed from the + Y side of the-X side half portion (or the + X side half portion), the wafer table WTB is positioned closest to the unload position UP1 when the exposure is completed. Therefore, after the exposure is completed, the movement of wafer table WTB to unload position UP1 can be performed in the shortest time.

Further, the exposure apparatus 100 according to the present embodiment includes: 1 st backside encoder system 70A, which measures 1 st fine movement stage position measurement system 110A that is held by coarse movement stage WCS so as to be movable to a position in the six-degree-of-freedom direction of wafer table WTB (fine movement stage WFS) in the six-degree-of-freedom direction when wafer stage WST is positioned at exposure station 200, irradiates measurement beam from below onto grating RG provided on the back surface (-Z-side surface) of wafer table WTB, and measures position information in the six-degree-of-freedom direction of wafer table WTB; and a 1 st top encoder system 80A having head parts 62A, 62C provided on the main support BD, and a pair of scales 39 provided on the wafer table WTB from the head parts 62A, 62C₁,39₂The measurement beam is irradiated (two-dimensional grating) to measure the positional information of the wafer table WTB in the direction of six degrees of freedom. Then, when the above-mentioned switching section 150A is set to the 1 st mode, the main control device 20 moves the wafer table WTB to the above-mentioned predetermined range (a range including a range in which the wafer table WTB moves for exposure of the wafer W held on the wafer table WTB) in the exposure station 200, for example, during exposure, based on the position information of the 1 st backside encoder system 70A and the 1 st topside encoder systemThe position information of 80A, which is the more reliable one, drives the wafer table WTB. This driving is performed by main control device 20 driving coarse movement stage WCS via coarse movement stage driving system 51A, and servo-driving wafer table WTB via fine movement stage driving system 52A.

In the present embodiment, the main control device 20 sets the mode 1 of the switching unit 150A, and combines the position signals F according to the combination_HAs a result, main controller 20 drives wafer table WTB within the predetermined range based on the position information with higher reliability of position information of 1 st backside encoder system 70A and position information of 1 st topside encoder system 80A. Therefore, wafer table WTB can be driven accurately within the predetermined range in exposure station 200 at any time based on highly reliable position information.

Further, the exposure apparatus 100 according to the present embodiment includes: 2 nd backside encoder system 70B, which measures, when wafer stage WST is positioned at measurement station 300, 2 nd fine movement stage position measurement system 110B that is held by coarse movement stage WCS so as to be movable to the position in the six-dof direction of wafer table WTB (fine movement stage WFS), irradiates grating RG provided on the back surface (-Z side surface) of wafer table WTB with a measurement beam from below, and measures position information in the six-dof direction of wafer table WTB when wafer table WTB moves within a predetermined range within measurement station 300 (a range within measurement station 300 that includes at least a range within which wafer table WTB moves for performing the above-described flow processing and wire check, for example, a range of measurement station 300 that corresponds to the above-described predetermined range of exposure station 200); and a 2 nd top encoder system 80B having head parts 62F and 62E provided on the main support BD, and a pair of scales 39 provided on the wafer table WTB from the head parts 62F and 62E₁,39₂The measurement beam is irradiated (two-dimensional grating), and the positional information in the six-degree-of-freedom direction of wafer table WTB can be measured in parallel with the measurement of the above positional information by second backside encoder system 70B. Then, when switching unit 150B is set to the 1 st mode, main controller 20 moves to wafer table WTBDuring the predetermined range in the measurement station 300, for example, during alignment, the wafer table WTB is servo-driven based on the position information with higher reliability of the position information of the 2 nd backside encoder system 70B and the position information of the 2 nd topside encoder system 80B.

In the present embodiment, the main control device 20 responds to the above-described merging position signal F by setting the mode 1 of the switching unit 150A_HThe wafer table WTB is driven within the predetermined range, and as a result, the wafer table WTB is driven within the predetermined range based on the position information of the more reliable one of the position information of the 2 nd backside encoder system 70B and the position information of the 2 nd topside encoder system 80B. Therefore, wafer table WTB can be accurately driven within the predetermined range in measurement station 300 at any time based on highly reliable position information.

Further, according to exposure apparatus 100 of the present embodiment, main control device 20 repeatedly performs the process of updating the coordinate system of 1 st backside encoder system 70A at predetermined intervals when wafer table WTB moves within the predetermined range of exposure station 200 during exposure or the like, and performs exposure of wafer W while managing the position of wafer table WTB on the coordinate system of 1 st backside encoder system 70A with grid errors corrected at any time. In addition, the coordinate system of the 1 st top-side encoder system 80A is updated by the main controller 20, that is, the grid distortion of the 1 st top-side encoder system 80A is inversely calculated from the updated grid of the coordinate system of the 1 st back-side encoder system 70A from the relationship between the 1 st back-side encoder system 70A and the corresponding local coordinate systems of the 1 st top-side encoder system 80A, and the updated grid distortion is updated.

In the streaming process, main controller 20 repeats the process of updating the coordinate system of 2 nd backside encoder system 70B at predetermined intervals, and performs alignment measurement and focus mapping while managing the position of wafer table WTB on the coordinate system of 2 nd backside encoder system 70B with the grid error corrected at any time.

In addition, the main controller 20 similarly updates the coordinate system of the 2 nd top-side encoder system 80B by inverting the grid distortion of the coordinate system of the 2 nd top-side encoder system 80B from the grid of the coordinate system of the 2 nd backside encoder system 70B that has been updated.

Further, since the coordinate systems of the 1 st and 2 nd backside encoder systems 70A and 70B are updated with high accuracy by including high-order components, it is also possible to prepare a reference wafer in which marks are arranged in a correct positional relationship and whose surface flatness is extremely high, mount the reference wafer on the wafer table WTB, move the wafer table WTB in the XY plane while measuring the position of the wafer table WTB by the 2 nd backside encoder system 70B, measure the marks of the reference wafer by the first alignment system AL1, measure the irregularities of the reference wafer by the multipoint AF systems (90A and 90B), and measure (correct) the high-order components of the grid including the grid, which is the coordinate system of the 2 nd backside encoder system 70B, RG. The measurement may be performed at least once at the time of starting the apparatus or the like, and may be performed not on the entire surface of the wafer but on a part of the area of the wafer in theory. In order to obtain data of high-order components of the grid of the grating RG which is a target of the refresh processing, the remaining region can be corrected by performing the refresh processing.

The wire check, which corrects the error between the coordinate system at the time of alignment and the coordinate system at the time of exposure based on the error factor unique to the flow process by actually moving wafer stage WST in the X-axis direction by main controller 20, is performed at a predetermined frequency (frequency as occasion demands).

The post-stream processing described above, i.e., the calculation processing of replacing the error factor parameters included in the wafer alignment result (EGA result) and the result of focus mapping with the corresponding parameters calculated by the 2 nd top-side encoder system 80B and the 3 rd top-side encoder system 80C on average from all the data observed in the stream processing, is performed.

As is clear from the above description, according to the exposure apparatus 100 of the present embodiment, the high-resolution exposure of the liquid immersion exposure on the wafer W can be performed with high overlay accuracy by the step-and-scan method based on the alignment result and the focus map result with high accuracy. Further, even if the wafer W to be exposed is a 450mm wafer, for example, high throughput can be maintained. Specifically, the exposure apparatus 100 can perform exposure processing on a 450mm wafer at a throughput equal to or higher than that of exposure processing on a 300mm wafer by a liquid immersion scanner disclosed in the above-mentioned U.S. patent application publication No. 2008/0088843, and the like.

In the above embodiment, since chuck unit 120 is configured as described above, for example, by waiting for the sub-wafer above loading position LP and performing the temperature control thereof in parallel with this, it is possible to load the wafer whose temperature has been controlled on wafer table WTB immediately after wafer stage WST is returned to loading position LP during exposure of the front wafer. However, the configuration of the gripper unit 120 is not limited to the above configuration. That is, the gripper unit 120 (bernoulli gripper 124) may have, for example, only the conveying function or at least one of the above-described temperature control function, the pre-alignment function, and the warp correction function (flattening function) in addition to the conveying function, and the configuration thereof may be determined in accordance with the kind, number, and the like of the functions added to the gripper unit 120 (bernoulli gripper 124), and the configuration for realizing the four functions including the conveying function is not limited to the above-described configuration. For example, in the case where the sub-wafer is not caused to stand by above the loading position LP in parallel with the exposure of the front wafer, the holding members (for preventing the displacement of the wafer in the XY plane in the non-contact holding state of the jig main body 130 during the stand-by) such as the pair of support plates 128 are not necessarily provided. The jig main body 130 does not necessarily have to include a temperature control member such as the cooling plate 123. This is because, for example, in the case where the sub-wafer is not kept on standby above the loading position LP in parallel with the exposure of the front wafer, it is possible to consider a case where it is sufficient to control the temperature of the wafer only on the cooling plate provided at a position other than the loading position LP until immediately before the start of the other loading. Further, since the wafer may be aligned after the wafer is loaded, a measurement system for measuring positional information of the wafer may not be necessarily provided while the wafer is held by the jig main body 130.

In the above embodiment, the holder main body 130 has the bernoulli holder 124 formed of a plate-like member having substantially the same size as the cooling plate 123, but the present invention is not limited thereto, and the holder main body 130 may have a plurality of bernoulli cups attached directly or via a plate member to the lower surface of the cooling plate 123 instead of the bernoulli holder 124. In this case, the plural bernoulli cups are preferably distributed over the entire surface of the cooling plate 123 or at least the central portion and the peripheral portion, and the main control device 20 can preferably adjust the blowing of the fluid (e.g., air) and the stop thereof, and the flow rate and/or flow velocity of the fluid to be blown, individually or for each group (e.g., each group of the central portion and the peripheral portion). In the case where the exposure apparatus includes the chuck unit 120 having the chuck main body 130 having such a configuration, it is also possible to suppress deformation of the wafer W supported by the chuck main body 130 in a non-contact manner from above, and to displace at least a part of the wafer W supported in a non-contact manner in the vertical direction by making the flow rate and/or flow velocity of the fluid from at least a part of the bernoulli cups of the chuck main body 130 different from the normal supporting state of the wafer W during standby at the loading position or during carrying of the wafer W onto the wafer holder (wafer table WTB). Of course, even when the chuck main body 130 has a single bernoulli chuck 124 as in the above-described embodiment, since deformation of the wafer W is suppressed, the flow velocity of the fluid ejected from the bernoulli chuck 124 and the like can be made different from those in a normal supporting state of the wafer W. In any case, in these cases, the wafer W whose deformation is suppressed is held by the wafer holder (wafer table WTB).

In the above embodiment, when the wafer W supported in a non-contact or contact state from above and below by the chuck main body 130 and the three vertical pins 140 is placed on the wafer holder (wafer table WTB), the main controller 20 drives the chuck main body 130 and the three vertical pins 140 downward. However, the main control device 20 is not limited to this, and may drive the wafer holder (wafer table WTB) upward with respect to the jig main body 130 and the three vertical pins 140, drive the jig main body 130 and the three vertical pins 140 downward, and drive the wafer holder (wafer table WTB) upward. In brief, main controller 20 only needs to move chuck body 130 and three vertical pins 140 and wafer holder (wafer table WTB) in the Z-axis direction until the lower surface of wafer W vertically supported by chuck body 130 and three vertical pins 140 contacts wafer holder (wafer table WTB). In this case, main controller 20 may move chuck body 130 and three vertical moving pins 140 relative to wafer holder (wafer table WTB) in the Z-axis direction, or may stop the relative movement immediately before the contact without moving wafer W until wafer W contacts wafer holder (wafer table WTB), and then transfer wafer W to wafer holder (wafer table WTB) only under the control of chuck body 130.

Further, main controller 20 may shift the positional relationship between wafer holder (wafer table WTB) and wafer W, that is, may exchange wafers W, by moving wafer holder (wafer table WTB) relative to one support member and the other support member while releasing the support of wafer W by one support member of chuck body 130 (1 st support member) and three vertical pins 140 (2 nd support member) and supporting wafer W by the other support member. In particular, when the wafer W is replaced by the three vertical moving pins 140, the wafer W may be replaced and again sucked while the suction is released. Further, at least one of the jig main body 130, the three vertical movable pins 140, and the wafer holder (wafer table WTB) may be moved to adjust the relative positional relationship between the wafer holder (wafer table WTB) and the wafer W.

In the above embodiment, the main controller 20 may detect the positional displacement and the rotational (θ z rotation) error in the X-axis direction and the Y-axis direction of the wafer W supported by the jig main body 130 in a non-contact manner using the three imaging devices 129 before the wafer W is supported by the three vertical pins 140. In this case, when the position (including rotation) of the chuck main body 130 in the XY plane is adjustable by the driving unit 122, the position (including rotation) of the wafer W in the XY plane can be adjusted in accordance with the detected positional deviation and rotation error. Alternatively, a configuration may be adopted in which three vertical pins 140 are movable in the XY plane with respect to wafer table WTB, and main controller 20 adjusts the position (including rotation) of wafer W in the XY plane via three vertical pins 140 in accordance with the detected positional deviation and rotation error. In this way, main controller 20 finely adjusts the position of wafer W before wafer W is held by the wafer holder (wafer table WTB).

In the above embodiment, the three vertical moving pins 140 are integrally vertically movable by the actuator 142. However, it is not limited thereto, and the three vertical moving pins 140 can be vertically moved, respectively. In this case, when the wafer W supported by the above-described jig main body 130 and the three vertical moving pins 140 in a non-contact or contact state from the upper and lower sides is placed on the wafer holder (wafer table WTB), the suction holding of the wafer W by the wafer holder can be started with a time difference from one side to the opposite side even when a uniform pressing force is applied to the entire surface of the wafer W from the jig main body 130 by making the timings of vertical movement of the three vertical moving pins 140 different. Alternatively, a pressing force (elastic force) for pressing the three vertical pins 140 in the + Z direction may be adjusted for each of the three pins. In this case, similarly, even when a uniform pressing force is applied to the entire surface of the wafer W from the jig main body 130, the wafer W can be sucked and held by the wafer holder with a time difference from one side to the opposite side. In any case, it is not necessary to tilt the wafer holder (wafer table WTB) in the thetax and/or thetay direction.

In the above embodiment, instead of the three vertical movable pins that can contact and support the wafer W, one or more other support members that can support the wafer W in parallel with the jig main body 130 and can move vertically may be provided. The plurality of support members may be configured to support a part of the side surface of the wafer W, or configured to openably and closably support the outer peripheral edge of the wafer W from the side (and/or lower side) at a plurality of positions. This support member may also be provided to the clamp unit 120 (bernoulli clamp 124). The chuck member of the chuck main body 130 for supporting the wafer W in a noncontact manner is not limited to the bernoulli chuck, and may be any member capable of supporting the wafer W in a noncontact manner. Therefore, for example, a vacuum preloading type air bearing may be used instead of or in addition to the bernoulli chuck (or bernoulli cup).

In the above embodiment, main control apparatus 20 may control at least one of the repulsive force and attractive force to chuck main body 130 (chuck member included) of wafer W so that wafer W held by wafer holder (wafer table WTB) is substantially flattened or the warp of wafer W is suppressed or prevented.

In the above embodiment, the driving portion 122 is fixed to the lower surface of the main support BD via the vibration-proof member, not shown, and the jig main body 130 is separated from the main support BD in terms of vibration. However, the present invention is not limited to this, and the driving portion 122 may be attached to the bracket FL via a support member, not shown, for example, so as to vibrationally separate the jig main body 130 from the main bracket BD.

In the above embodiment, the flow processing including the alignment measurement and the focus map is performed in a state where the liquid Lq is not in contact with any portion of the wafer table WTB. However, the process of moving wafer table WTB and measurement table MTB to the above-described contact or proximity state at the time of the end of the alignment measurement may be considered. In this case, if the focus map is not completed at a point after the alignment measurement is completed, for example, the remaining focus maps may be performed while the two WTBs and the MTB are kept in contact with or close to each other. In this case, since alignment measurement can be performed without liquid Lq contacting any part of wafer table WTB, the step movement of wafer table WTB (wafer stage WST) during the alignment measurement can be performed in a shorter time than in the liquid immersion scanner disclosed in the above-mentioned U.S. patent application publication No. 2008/0088843 and the like.

In the above embodiment, the unloading position UP1 is described as being located on a straight line connecting the projection optical system PL and the measurement station 300 (the first alignment system AL1) in the Y-axis direction, and the standby position UP2 is set on the-X side of the unloading position UP1, but the standby position UP2 may not necessarily be provided. However, in the case where alignment measurement is performed in a state where the liquid Lq does not contact any part of the wafer table WTB, the unloading position may not necessarily be set to a position satisfying the above positional relationship.

The structure of the unloading device 170 described in the above embodiment is merely an example. For example, a plate-like support member may be provided between the lower surface of one side portion and the lower surface of the other side portion in the X-axis direction of the holder FL without interfering with the head reading portion and the like, a 1 st unload slider composed of members having the same configuration as the vertically movable wafer holding portion 174 may be provided at an unload position UP1 on the support member, a 2 nd unload slider may be composed of a robot or the like, and a 2 nd unload slider may be composed of a robot or the like. In this case, after the wafer is picked up from vertical moving pin 140 of wafer stage WST by first unloading slider 1, this first unloading slider is raised. Then, the wafer is picked UP from the 1 st unloading slider at the unloading position UP1 by the 2 nd unloading member, and is transported to the transfer position where it is waiting at the above-mentioned waiting position UP2 or is transferred to the transport system. In the latter case, the standby position UP2 may not be set.

In the above-described embodiment, the measurement station 300 is provided with the plurality of alignment systems AL1 and AL2 in which the detection areas are arranged in the X-axis direction₁～AL2₄In this case, but not exclusively, a plurality of alignment systems AL1, AL2₁～AL2₄The detection regions may be different in position not only in the X-axis direction but also in the Y-axis direction. Alternatively, only one mark detection system may be provided at the measurement station 300. In this case as well, as long as the loading position, the measurement station, the unloading position, and the exposure station have the same positional relationship as in the above-described embodiment, the wafer stage WST holding the wafer W is moved from the loading position to the exposure station in the Y-axis direction, and a plurality of marks on the wafer W are detected by the mark detection system at the measurement station 300 located on the movement path in the middle of the movement. Next, after exposure station 200 exposes the wafer held on wafer stage WST, before returning the wafer from exposure station 200 to the loading position in the Y-axis direction, the wafer is loaded at the unloading position set in the movement path of wafer stage WST from exposure station 200 to measuring station 300The stage WST carries out the exposed wafer. In this case, a series of processes of carrying in (loading) of the wafer W onto the wafer stage WST, detection of a mark on the wafer W, exposure of the wafer, and carrying out (unloading) of an exposed wafer from the wafer stage WST can be efficiently performed in a short time while the wafer stage WST is reciprocated from the loading position located apart in the Y-axis direction to the exposure station.

In the above embodiment, the irradiation regions on the + X-side half (or the-X-side half) on the wafer W are exposed in the order from the-Y side to the-Y side, and then the irradiation regions on the-X-side half (or the + X-side half) on the wafer W are exposed in the order from the + Y side to the-Y side. After the exposure is completed, the plurality of irradiation regions on the wafer W can be exposed in the same order as in the conventional liquid immersion scanner, for example, in the specification of U.S. patent application publication No. 2008/0088843, and the like, as long as it is not necessary to move the wafer table WTB to the unloading position (including the case where it is unnecessary and the case where it is difficult to move the wafer table WTB by separating the exposure position from the unloading position) in a substantially shortest time. Alternatively, even when the apparatus is moved to the unload position UP1 in the shortest time after the exposure is completed, the exposure sequence is not limited to the above embodiment. In brief, among a plurality of shot areas on the wafer, the exposure is started from a predetermined 1 st shot area distant from the unloading position, and the shot area near the 1 st shot area is exposed last.

In the above embodiment, even when the measurement information (position information) of the 1 st backside encoder system 70A and the 1 st topside encoder system 80A is switched depending on the situation, the switching method is not limited to the method of the above embodiment. The main control device 20 is provided, for example, in heads 73a to 73d (arm member 71) of the measuring arm 71A₁) And 1 st backside encoder system 70A has a lower reliability than 1 st topside encoder system 80A, for example, at least a portion of 50Hz to 500Hz, and particularly 100Hz to 400Hz, it is preferable to perform drive control of wafer table WTB using position information measured at least by 1 st topside encoder system 80A. The reference for switching the measurement information (position information) of the 1 st backside encoder system 70A and the 1 st topside encoder system 80A is not limited to the frequency band of the output signal. Further, according to the above embodiment, since the position measurement of wafer table WTB can be performed by both of the 1 st backside encoder system 70A and the 1 st topside encoder system 80A, it is possible to perform various usage methods that are adapted to the advantages and disadvantages of both of the encoder systems, such as the use of one encoder system alone and the use of both systems in combination. Briefly, main controller 20 may control driving of wafer table WTB by coarse-movement stage drive system 51A and/or fine-movement stage drive system 52A based on position information measured by at least one of 1 st backside encoder system 70A and 1 st topside encoder system 80A. Further, the 2 nd backside encoder system 70B and the 2 nd topside encoder system 80B constituting the 2 nd fine movement stage position measurement system 110B are also the same as described above.

In the merging control (mode 1 of the switching units 150A, 150B, and 150C), the top-side encoder system and the back-side encoder system are switched in accordance with the vibration, specifically, using a low-pass filter and a high-pass filter having the same cutoff frequency, but the present invention is not limited thereto, and for example, a merged position signal obtained by weighting and adding the output signal of the top-side encoder system and the output signal of the back-side encoder system may be used without using a filter. Further, the topside encoder system and the backside encoder system may be used separately or in combination depending on factors other than vibration. For example, in the 1 st micro-motion stage position measurement system 110A, only the backside encoder system 70A may be used, for example, in a scanning exposure.

In the above embodiment, although 2 nd fine movement stage position measurement system 110B has been described as including 2 nd back-side encoder system 70B and 2 nd top-side encoder system 80B, the present invention is not limited to this, and a measurement system that measures the position of wafer table WTB at measurement station 300 may be an encoder system or an interferometer system having a completely different configuration, only one of 2 nd back-side encoder system 70B and 2 nd top-side encoder system 80B, or the like. Of course, in the case of the 2 nd topside encoder system 80B only, the above-described renewal of the coordinate system by the 2 nd topside encoder system 80B fitted to each other is not performed. Similarly, the measurement system for measuring the position of wafer table WTB in exposure station 200 may be an encoder system or an interferometer system having a completely different configuration, or may be only one of 1 st backside encoder system 70A and 1 st topside encoder system 80A.

In the above embodiment, the 1 st and 2 nd backside encoder systems 70A and 70B have been described as including the measurement arms 71A and 71B (each having the arm member 71 in which at least a part of the optical system of only the encoder head is housed)₁、71₂) However, the present invention is not limited to this, and for example, as long as the measuring arm can irradiate a measuring beam from a portion facing the grating RG, a light source, a photodetector, or the like may be incorporated in the distal end portion of the arm member. In this case, it is not necessary to pass the optical fiber through the inside of the arm member. Furthermore, the arm member is not limited in its shape and cross-section, and the damping member may not be necessary. The 1 st and 2 nd backside encoder systems 70A,70B reside in the arm member 71₁、71₂In the case where the light source and/or the detector are not provided, the arm member 71 may not be used₁、71₂Of the inner part of (a).

It is sufficient that the 1 st and 2 nd backside encoder systems 70A and 70B do not necessarily have to include a measurement arm, and include a head which is disposed in the space portion of the coarse movement stage WCS so as to face the grating RG, irradiates at least one measurement beam onto the grating RG, and receives light (reflected diffracted light) from the grating RG of the measurement beam, and measures positional information in at least the XY plane of the fine movement stage WFS from an output of the head.

In the above embodiment, the case where the 1 st and 2 nd backside encoder systems 70A and 70B are provided with two three-dimensional heads, XZ heads, and YZ heads, respectively, has been exemplified, but the arrangement of the combination of the heads is not limited to this. For example, even when the coordinate system is updated using the measurement values of the redundant axes, the degrees of freedom that can be measured by the 1 st and 2 nd backside encoder systems 70A and 70B may not be set to ten degrees of freedom, but may be seven or more degrees of freedom, for example, eight degrees of freedom. For example, only one of the two three-dimensional heads, the XZ head, and the YZ head may be provided. In this case, the arrangement, structure, and the like of the heads are not limited to the above embodiments. For example, 1 st and 2 nd backside encoder systems 70A and 70B may irradiate grating RG with a plurality of measuring beams for measuring position information of wafer table WTB in the six-degree-of-freedom direction, and irradiate grating RG with at least one measuring beam different from the plurality of measuring beams, that is, the plurality of measuring beams for measuring position information of wafer table WTB in the six-degree-of-freedom direction. In this case, main control apparatus 20 can perform the same coordinate system updating as described above, that is, can update information for correcting the measurement error of 1 st and 2 nd backside encoder systems 70A and 70B due to grating RG, using the positional information of wafer table WTB measured by 1 st and 2 nd backside encoder systems 70A and 70B by the different at least one measuring beam.

For example, if the coordinate system is not updated using the measurement values of the redundant axes, the 1 st and 2 nd backside encoder systems 70A and 70B may be arranged as a combination of heads that can measure only the position information of the wafer table WTB in the six-degree-of-freedom direction. For example, the 1 st and 2 nd backside encoder systems 70A and 70B may have only two three-dimensional heads, respectively. In this case, the two three-dimensional heads can measure position information in five-degree-of-freedom directions other than the θ x direction of wafer table WTB, as long as they are arranged in the same manner as in the above-described embodiment. Further, by disposing the two three-dimensional heads so as to be shifted from each other in the X-axis direction and the Y-axis direction, the positional information in the six-degree-of-freedom direction of wafer table WTB can be measured. Further, the 1 st and 2 nd backside encoder systems 70A and 70B may be provided with only a pair of XY heads arranged in the X-axis direction, respectively. In this case, the positional information in the three-degree-of-freedom direction in the XY plane of wafer table WTB can be measured. The 1 st and 2 nd backside encoder systems 70A and 70B may employ a head unit (optical system) having a Z head in addition to the X head and/or the Y head.

In the above-described embodiment, since the grating RG is disposed on the lower surface (back surface) of the fine movement stage WFS, the fine movement stage WFS can be made hollow to reduce the weight, and pipes, wires, and the like can be disposed inside the fine movement stage WFS. The reason for this is that since the measurement beam irradiated from the encoder head does not travel inside the fine movement stage WFS, it is not necessary to use a solid member through which light can be transmitted to the fine movement stage WFS. However, the present invention is not limited to this, and when a neutral member that transmits light through the fine movement stage WFS is used, the grating may be disposed on the upper surface of the fine movement stage, that is, the surface facing the wafer, or the grating may be formed on the wafer holder that holds the wafer. In the latter case, even if the wafer holder expands or the mounting position of the fine movement stage is deviated during exposure, the position of the wafer holder (wafer) can be measured following this.

The configurations of the 1 st to 4 th top encoder systems 80A to 80D in the above embodiments are not limited to those described in the above embodiments. For example, as disclosed in, for example, U.S. patent application publication No. 2006/0227309, at least a part of the 1 st to 4 th top-side encoder systems 80A to 80D may be an encoder system having a configuration in which a plurality of encoder heads (each of which may be configured similarly to the four-axis head described above, for example) are provided on the wafer table WTB, and a lattice section (for example, a two-dimensional lattice section or a one-dimensional lattice section configured in two dimensions) is arranged outside the wafer table WTB so as to face the encoder heads. In this case, the plurality of encoder heads may be arranged at four corners (horners) of wafer table WTB, respectively, or a pair of encoder heads may be arranged on two diagonal lines intersecting at the center (center of wafer holder) outside wafer table WTB with wafer table WTB interposed therebetween, respectively. In the grid portion, for example, four grid plates each forming a two-dimensional grid may be attached to one fixing member (plate member or the like), and the fixing member may be suspended and supported by the main support BD via a support member including a fixture so that the four grid plates are arranged around the projection optical system PL (or the nozzle unit 32).

In the above embodiment, the fine movement stage WFS can be driven in all six-degree-of-freedom directions, but is not limited thereto, and may be movable in three-degree-of-freedom directions within a two-dimensional plane parallel to the XY plane. In this case, when fine movement stage WFS moves within a predetermined range within exposure station 200 (a range within exposure station 200 that includes at least a range within which wafer table WTB moves for exposure of wafer W held by wafer table WTB), the main controller 20 can drive the fine motion stage WFS while controlling the position of the fine motion stage WFS in the n-degree-of-freedom (n ≧ 3) direction including three degrees of freedom in the two-dimensional plane, for example, based on the measurement information of the plurality of heads of the 1 st backside encoder system 70A, the grid error in the predetermined measurement direction of the coordinate system of the 1 st backside encoder system 70A is updated based on the difference between a part of the position information in the predetermined measurement direction used for driving the n degrees of freedom of the fine movement stage WFS and the extra position information that is different from the part of the position information in the predetermined measurement direction and is not used for driving the n degrees of freedom of the fine movement stage WFS in the predetermined measurement direction. In this case, since the positions of fine movement stage WFS in the respective directions of X-axis, Y-axis, and θ Z can be measured, and the grid errors in at least one direction of the X-axis, Y-axis, and Z-axis of 1 st backside encoder system 70A can be updated only using the measurement values of the extra axes, it is not necessary to provide all of heads 73a to 73 d.

Fine movement stage drive system 52A is not limited to the moving magnet type described above, and may be a moving coil type. Further, fine movement stage WFS may be supported in contact with coarse movement stage WCS. Therefore, a fine movement stage drive system that drives fine movement stage WFS with respect to coarse movement stage WCS may be formed by combining a rotation motor and a ball screw (or a feed screw), for example.

In the above embodiment, a hall sensor, an encoder system, or the like may be used as wafer stage position measurement system 16A instead of the interferometer system. In the above embodiment, wafer stage position measurement system 16A for directly measuring the position of coarse movement stage WCS may not be provided. That is, in the above embodiment, the interferometer system may not be provided at all. In this case, it is preferable to provide a measurement system for measuring relative position information between coarse movement stage WCS and fine movement stage WFS.

In the above embodiment, instead of the unload position UP1 and the standby position UP2 set between the exposure station 200 and the measurement station 300, only the unload position may be set at a position near the load position LP, for example, at the same Y position as the load position LP and separated by a predetermined distance to the-X side. In this case, the unloading position may be set to the same position as the loading position LP. The loading position LP is not limited to the position where the reference mark FM on the measurement plate 30 is positioned within the visual field (detection region) of the first alignment system AL1, and may be set to a position in the vicinity thereof, for example, a position symmetrical to the unloading position with respect to the reference axis LV. In addition, a single alignment system may be used as the alignment system, in which case the unloading position may also be arranged on the-Y side thereof with respect to the one alignment system.

In the above embodiment, instead of the interferometer system, a hall sensor, an encoder system, or the like may be used as measurement stage position measurement system 16B for measuring the position of measurement stage MST. In the latter case, as shown in fig. 39, for example, a two-dimensional grating RG2 may be provided on the upper surface of measurement table MTB, and a plurality of, for example, four-axis heads including a combination of an XZ head and a YZ head, may be arranged in the main support BD via a support member so as to face the two-dimensional grating RG2 along the movement path of measurement stage MST. In fig. 39, a pair of four-axis heads 166 are arranged along the movement path of measurement stage MST₁、166₂A pair of four-axis read heads 166₃、166₄A pair of four-axis read heads 166₅、166₆. These heads and two-dimensional grating RG2 may be collectively referred to as a 5 th top-side encoder system, and the positional information of measurement stage MST may be measured by the 5 th top-side encoder system in the parallel operation described above by changing the arrangement (position) of the heads shown in fig. 39 or adding at least one head. In this case, measurement stage position measurement system 16B for directly measuring measurement stage MST may not necessarily be provided. In this case, it is preferable to provide a measurement system for measuring relative positional information between the slider portion 60 and the support portion 62 of the measurement stage MST and the measurement table MTB.

In the above-described embodiment, the configuration of the read head unit of each backside encoder system is not limited to the above configuration, and may be any configuration. Also, the arrangement or number of readheads, etc. of each topside encoder system may be arbitrary.

In the above embodiment, the case where the exposure apparatus is a liquid immersion type exposure apparatus has been described, but the present invention is not limited to this, and a dry type in which the wafer W is exposed without passing a liquid (water) may be employed.

In the above embodiment, the case where the exposure apparatus is configured such that one fine movement stage is supported by coarse movement stage WCS and is reciprocated between measurement station 300 and exposure station 200 has been described, but two fine movement stages may be used. In this case, two micro-motion stages may be alternatively provided between the two coarse-motion stages, and the two micro-motion stages may be alternately moved back and forth between the measurement station 300 and the exposure station 200. Alternatively, three or more fine movement stages may be used. It is possible to perform parallel processing of the exposure processing of the wafer on one fine movement stage WFS and the above-described flow processing using the other fine movement stage WFS. In this case, one of the two coarse movement stages may move only in the exposure station 200, and the other of the two coarse movement stages may move only in the measurement station 300.

In addition, instead of the measurement stage MST, a wafer stage WST may be provided as disclosed in, for example, U.S. Pat. No. 6,341,007 and U.S. Pat. No. 6,262,796. In this case, it is preferable that the further wafer stage (coarse movement stage) is configured to have a shape capable of engaging with the measurement arm 71A from the lateral side. In this way, it is possible to perform parallel processing of the exposure processing of the wafer on one wafer stage and the above-described flow processing using the other wafer stage.

Alternatively, a wafer stage WST may be further provided. That is, the measurement stage MST and the two wafer stages are provided. In this case as well, the exposure process for the wafer on one fine movement stage WFS and the above-described flow process using the other fine movement stage WFS can be performed in parallel. Further, after the exposure process for the wafer on the first fine movement stage WFS is completed, various measurements can be performed using the measurement member on the measurement table MTB while holding the liquid Lq between the measurement table MTB and the projection optical system PL until the exposure process for the wafer on the second fine movement stage WFS is started. In this case, it is not necessary to perform all the measurement operations using the plurality of measurement members (sensors) of measurement stage MST in the replacement of one of the two wafer stages to the other, and for example, a part of the plurality of measurements may be performed in the replacement of one wafer stage to the other wafer stage, and the remaining measurements may be performed in the replacement of the other wafer stage to the one wafer stage.

In the above-described embodiment, measurement stage MST does not necessarily have to include the various measurement members (sensors) described above, and may be used while maintaining the immersion area in projection optical system PL simply in place of wafer stage WST. In this case, at least a part of the various measuring members (sensors) described above may be provided on the wafer stage.

Instead of measurement stage MST, a plate member that can transfer the liquid immersion area to wafer table WTB and holds the liquid in the liquid immersion area between projection optical system PL may be provided, or an auxiliary stage disclosed in, for example, U.S. patent application publication No. 2010/0159403 may be provided.

In the above embodiment, the case where the exposure apparatus is of the step-and-scan type has been described, but the present invention is not limited thereto, and the above embodiment can be applied to a still type exposure apparatus such as a stepper. Further, the above-described embodiment can be applied to a reduction projection exposure apparatus for combining the irradiation regions and the step-by-step joining method of the irradiation regions.

The projection optical system in the exposure apparatus according to the above embodiment may be not only a reduction system but also an equal magnification system or an enlargement system, the projection optical system PL may be not only a refraction system but also a reflection system or a catadioptric system, and the projection image may be an inverted image or an erect image.

The illumination light IL is not limited to ArF excimer laser (wavelength 193nm), but may be ultraviolet light such as KrF excimer laser (wavelength 248nm), or F₂Vacuum ultraviolet light such as laser light (wavelength 157 nm). Harmonics such as those disclosed in U.S. patent specification 7,023,610 may also be usedIn the optical fiber amplifier, for example, coated with erbium (or both erbium and ytterbium), a single-wavelength laser beam in the visible region of the infrared region oscillated from a DFB semiconductor laser or a fiber laser is amplified as vacuum ultraviolet light, and converted into ultraviolet light at a wavelength using a nonlinear optical crystal.

In the above embodiment, the illumination light IL of the exposure apparatus is not limited to light having a wavelength of 100nm or more, and light having a wavelength of less than 100nm may be used. For example, the above-described embodiments can be applied to an EUV exposure apparatus using EUV (extreme Ultra violet) light in a soft X-ray region (for example, a wavelength region of 5 to 15 nm). The above embodiments are also applicable to an exposure apparatus using charged particle beams such as electron beams or ion beams.

In the above embodiment, although the light transmissive mask (reticle) is used for forming a predetermined light shielding pattern (or phase pattern, or dimming pattern) on a substrate having light transmission properties, an electronic mask (also referred to as a variable shape mask, an active mask, or an image generator, such as a DMD (digital micro-mirror Device) including a non-light emitting type image display Device (spatial light modulator)) which forms a transmission pattern, a reflection pattern, or a light emitting pattern based on electronic data of a pattern to be exposed may be used instead of the mask, for example, as disclosed in U.S. patent No. 6,778,257. When such a variable shape mask is used, since the stage on which the wafer or the glass plate is mounted is scanned with respect to the variable shape mask, the position of the stage can be measured by using the above-described 1 st and 2 nd fine movement stage position measurement systems 110A and 110B, and the same effects as those of the above-described embodiments can be obtained.

The above embodiment can also be applied to an exposure apparatus (lithography system) that forms a line and space pattern on a wafer W by forming interference fringes on the wafer W, as disclosed in, for example, international publication No. 2001/035168.

Further, for example, the above-described embodiment can be applied to an exposure apparatus disclosed in, for example, U.S. patent No. 6,611,316, in which two reticle patterns are combined on a wafer via a projection optical system, and double exposure is performed substantially simultaneously on one irradiation region on the wafer by one scanning exposure.

In the above embodiment, the object to be patterned (the object to be exposed to the energy beam) is not limited to a wafer, and may be another object such as a glass plate, a ceramic substrate, a film member, or a mask substrate.

The use of the exposure apparatus is not limited to exposure apparatuses for semiconductor manufacturing, and can be widely applied to, for example, manufacturing exposure apparatuses for liquid crystal for transferring a liquid crystal display element pattern onto a square glass plate, and manufacturing exposure apparatuses for organic EL, thin film magnetic heads, imaging elements (such as CCD), micromachines, DNA chips, and the like. In addition to the production of microdevices such as semiconductor devices, the above embodiments can be applied to an exposure apparatus for transferring a circuit pattern to a glass substrate, a silicon wafer, or the like in order to produce a reticle or a mask used in a light exposure apparatus, an EUV (extreme ultraviolet) exposure apparatus, an X-ray exposure apparatus, an electron beam exposure apparatus, or the like.

An electronic device such as a semiconductor device is manufactured by a step of designing the function and performance of the device, a step of manufacturing a reticle from a silicon material, a step of manufacturing a wafer from the silicon material, a photolithography step of transferring a pattern formed on a mask (reticle) to the wafer by using the exposure apparatus (pattern forming apparatus) and the exposure method of the above embodiment, a development step of developing the wafer after exposure, an etching step of etching and removing an exposed member except for a portion where a resist remains, a resist removal step of removing an unnecessary resist after etching, a device assembly step (including a dicing step, a bonding step, a packaging step), an inspection step, and the like. In this case, since the exposure method is performed on the wafer by using the exposure apparatus of the above embodiment in the lithography process to form the device pattern, a device with high integration can be manufactured with good productivity. The exposure apparatus (patterning apparatus) according to the above-described embodiment is manufactured by assembling various subsystems (including the respective constituent elements listed in the scope of the present application) so as to maintain predetermined mechanical, electrical, and optical accuracy. To ensure these various accuracies, before and after assembly, adjustment for achieving optical accuracy is performed on various optical systems, adjustment for achieving mechanical accuracy is performed on various mechanical systems, and adjustment for achieving electrical accuracy is performed on various electrical systems. The assembly process from various subsystems to the exposure apparatus includes mechanical connection, wiring connection of circuits, piping connection of air pressure circuits, and the like. Of course, there is a separate assembly process for each subsystem before the assembly process from each subsystem to the exposure apparatus. When the assembly process from the various subsystems to the exposure apparatus is finished, the overall adjustment is performed to ensure various accuracies of the entire exposure apparatus. Further, it is preferable that the exposure apparatus is manufactured in a clean room in which temperature, cleanliness, and the like are controlled.

Further, the disclosures of all PCT international publications, U.S. patent application publications, and U.S. patent application publications related to the exposure apparatus and the like cited in the above description are incorporated as a part of the present description.

Claims

1. A conveying method for conveying a substrate to a stage that holds the substrate in an exposure apparatus that exposes the substrate with illumination light via an optical system, the conveying method comprising:

an operation of supporting the substrate, which is supported from above in a non-contact manner by a 1 st support member, from below by a 2 nd support member, which is different from the 1 st support member and is movable up and down, above the stage; and

and an operation of lowering the 2 nd support member and releasing the support of the substrate by the 2 nd support member to place the substrate on the stage.

2. The conveyance method according to claim 1, wherein at least one of deformation control, temperature adjustment, and pre-alignment of the substrate is performed using the 1 st support member.

3. The conveyance method according to claim 1 or 2, wherein at least one of a repulsive force or an attractive force of the 1 st supporting member to the substrate is controlled to control deformation of the substrate.

4. The handling method according to any one of claims 1 to 3, further comprising:

an operation of supporting a portion of the substrate other than the upper surface by a holding member while supporting the substrate from above in a non-contact manner by the 1 st supporting member before supporting the substrate from below by the 2 nd supporting member; and

the substrate is supported from below by the 2 nd support member, and the operation of contact support of the substrate by the holding member is released.

5. The conveyance method according to any one of claims 1 to 4, wherein the 1 st support member includes a jig member that supports the substrate in a non-contact manner, and a temperature adjustment member for the substrate;

the substrate is supported from above in a non-contact manner by the clamp member, and the temperature of the substrate is adjusted by the temperature adjusting member.

6. The handling method according to any one of claims 1 to 5, further comprising:

an operation of measuring positional information of the substrate before the substrate is held by the stage.

7. The handling method according to any one of claims 1 to 6, further comprising:

before the 1 st support member supports the substrate in a non-contact manner, the substrate is conveyed to a position above the stage and below the 1 st support member by a conveying member.

8. A conveying method for conveying a substrate to a stage that holds the substrate in an exposure apparatus that exposes the substrate with illumination light via an optical system, the conveying method comprising:

an operation of supporting the substrate, which is supported from above in a non-contact manner by a 1 st support member, above the stage by a 2 nd support member different from the 1 st support member, in a contact manner;

an operation of relatively moving the 2 nd support member and the stage so that the substrate is placed on the stage; and

and holding the mounted substrate by the stage.

9. The conveyance method according to claim 8, wherein the stage starts holding the substrate simultaneously with or before and after releasing the support of the substrate by the 2 nd support member.

10. The conveyance method according to claim 8 or 9, wherein at least the pre-alignment of the substrate supported in a non-contact manner by the 1 st support member is performed;

before the stage holds the substrate, the substrate and the stage are relatively moved according to the positional information of the substrate obtained by the pre-alignment.

11. The conveyance method according to any one of claims 8 to 10, wherein the 2 nd support member supports the substrate from below.

12. A conveying method for conveying a substrate to a stage that holds the substrate in an exposure apparatus that exposes the substrate with illumination light via an optical system, the conveying method comprising:

an operation of displacing at least a part of the substrate supported in a non-contact manner in a vertical direction by a 1 st support member to control deformation of the substrate supported in a non-contact manner from above by the 1 st support member; and

and a step of relatively moving the 1 st support member and the stage in a vertical direction to hold the substrate whose deformation is controlled by the stage.

13. The conveyance method according to claim 12, wherein the substrate is supported in contact from below by a 2 nd support member different from the 1 st support member;

the substrate whose deformation is controlled by the 1 st support member is held by the stage by the relative movement of the 2 nd support member and the stage.

14. The transfer method according to claim 12 or 13, wherein the substrate whose deformation is controlled by the 1 st support member is held by the stage while being subjected to at least one of temperature adjustment and pre-alignment.

15. A conveying method for conveying a substrate to a stage that holds the substrate in an exposure apparatus that exposes the substrate with illumination light via an optical system, the conveying method comprising:

an operation of relatively moving the 1 st support member and the stage so as to bring the lower surface of the substrate, which is supported from above in a non-contact manner by the 1 st support member, into contact with the stage above the stage;

an operation of applying a downward force from above to at least a part of the substrate, the lower surface of which is in contact with the stage, via the 1 st support member; and

and holding the substrate to which the downward force is applied by the stage.

16. An exposure method for exposing a substrate with illumination light via an optical system, the exposure method comprising:

an operation of carrying the substrate onto the stage by the carrying method according to any one of claims 1 to 15; and

and an operation of irradiating the illumination light to the substrate held on the stage via the optical system.

17. The exposure method according to claim 16, wherein the substrate is moved relative to the illumination light in a 1 st and a 2 nd directions by the stage, the 1 st and the 2 nd directions being orthogonal to each other in a predetermined plane perpendicular to an optical axis of the optical system;

in the exposure operation of the substrate, the stage is driven to move the substrate from one side to the other side in the 1 st direction to expose the 1 st area of the substrate on one side in the 2 nd direction, and to move the substrate from the other side to one side in the 1 st direction to expose the 2 nd area of the substrate on the other side in the 2 nd direction.

18. An exposure method for exposing a substrate with illumination light via an optical system, the exposure method comprising:

an operation of holding the substrate by a stage at a loading position separated to one side from the optical system in the 1 st direction out of the 1 st and 2 nd directions, the 1 st and 2 nd directions being orthogonal to each other in a predetermined plane perpendicular to an optical axis of the optical system;

an operation of detecting positional information of the substrate held on the stage by a detection system disposed at a measurement station different from an exposure station at which the optical system is disposed; and

an operation of moving the stage from the measurement station to the exposure station to perform an exposure operation of the substrate;

in the exposure operation, the stage is driven to move the substrate from one side to the other side in the 1 st direction to expose the 1 st area of the substrate on one side in the 2 nd direction, and to move the substrate from the other side to one side in the 1 st direction to expose the 2 nd area of the substrate on the other side in the 2 nd direction.

19. The exposure method according to claim 18, wherein the detection system is disposed on one side of the 1 st direction with respect to the optical system;

in the detection operation of the detection system for the substrate, the stage is driven so that the substrate moves from one side to the other side in the 1 st direction with respect to the detection system.

20. The exposure method according to claim 18 or 19, wherein the substrate is exposed with the illumination light via the optical system and the liquid;

the stage arranged to face the optical system is relatively moved from the other side in the 1 st direction to one side so that a stage different from the stage approaches the stage, and the two stages after the approach are relatively moved with respect to the optical system so that the stage and the optical system are arranged to face each other while maintaining the liquid under the optical system.

21. The exposure method according to claim 20 wherein the stage is moved to an unload position separated from under the optical system and set between the optical system and the detection system by relative movement of the two stages after the approach with respect to the optical system, and the substrate after exposure is carried out from the stage.

22. An exposure method for exposing a substrate with illumination light via an optical system, the exposure method comprising:

detecting, by a detection system, positional information of a substrate held on the stage, the detection system being separated from the optical system on one side in the 1 st direction and being disposed at a measurement station different from an exposure station at which the optical system is disposed;

an operation of moving the stage from the measurement station to the exposure station to perform an exposure operation of the substrate; and

an operation of moving the stage from under the optical system to an unload position set between the optical system and the detection system to carry out the substrate from the stage;

23. The exposure method according to claim 22, wherein the substrate carried out of the stage is transferred to a transport system via a standby position different from the unloading position.

24. The exposure method according to claim 22 or 23, wherein in the exposure operation, the stage is driven to move the substrate from one side to the other side in the 1 st direction to expose a 1 st region of the substrate on one side in the 2 nd direction, and to move the substrate from the other side to one side in the 1 st direction to expose a 2 nd region of the substrate on the other side in the 2 nd direction.

25. The exposure method according to any one of claims 18 to 24, wherein the substrate is carried into the stage above the stage arranged at the loading position via a support member that supports the substrate in a non-contact manner from a front surface side.

26. An exposure method for exposing a substrate with illumination light via an optical system, the exposure method comprising:

an operation of supporting the substrate from a front surface side thereof in a non-contact manner above a stage having a holder that is disposed at a loading position set apart from the optical system and holds the substrate;

an operation of relatively moving the substrate and the holder to carry the substrate into the stage; and

the operation of deformation of the substrate is controlled by the 1 st supporting member which supports the substrate in a non-contact manner.

27. The exposure method according to claim 26, wherein at least one of an attractive force and a repulsive force is imparted to the substrate by the 1 st support member.

28. The exposure method according to claim 27, wherein the substrate supported in a non-contact manner by the 1 st support member is supported in contact with the 2 nd support member from a back surface side thereof;

when the substrate is carried into the stage, the 2 nd support member and the holder move relatively;

and applying at least one of the attractive force and the repulsive force to the substrate supported by the 2 nd support member or the holder.

29. The exposure method according to any one of claims 26 to 28, wherein the substrate supported by the 1 st support member in a non-contact manner is held by the holder while being subjected to at least one of temperature adjustment and pre-alignment.

30. A device manufacturing method, comprising:

an act of exposing the substrate by the exposure method according to any one of claims 16 to 29; and

and developing the substrate after exposure.

31. An exposure apparatus for exposing a substrate with illumination light via an optical system, the exposure apparatus comprising:

a transport system that transports the substrate to a loading position set apart from the optical system to one side in the 1 st direction out of the 1 st and 2 nd directions, the 1 st and 2 nd directions being orthogonal to each other in a predetermined plane perpendicular to an optical axis of the optical system;

a stage having a holder for holding the substrate carried in from the transport system;

a drive system that moves the stage;

a detection system which is disposed at a measurement station different from an exposure station where the optical system is disposed, and which detects positional information of the substrate held on the stage; and

and a controller that controls the drive system to move the stage from one side to the other side in the 1 st direction to expose a 1 st area of the substrate on one side in the 2 nd direction and to move the stage from the other side to one side in the 1 st direction to expose a 2 nd area of the substrate on the other side in the 2 nd direction during an exposure operation of the substrate.

32. The exposure apparatus according to claim 31, wherein the detection system is disposed on one side of the 1 st direction with respect to the optical system;

in the detection operation of the substrate by the detection system, the stage is driven so that the substrate moves from one side to the other side in the 1 st direction with respect to the detection system.

33. The exposure apparatus according to claim 31 or 32, further comprising a stage different from the stage;

the substrate is exposed with the illumination light via the optical system and the liquid;

the controller relatively moves the different stage from the other side in the 1 st direction to one side so that the different stage approaches the stage arranged to face the optical system, and relatively moves the two stages after the approach with respect to the optical system so that the different stage and the optical system are arranged to face each other instead of the stage while maintaining the liquid under the optical system.

34. The exposure apparatus according to claim 33 wherein the stage moves to an unload position separated from under the optical system and set between the optical system and the detection system by relative movement of the two stages after the approach with respect to the optical system, and the substrate after exposure is carried out from the stage.

35. The exposure apparatus according to any one of claims 31 to 34, wherein the substrate is carried into the stage above the stage arranged at the loading position via a support member that supports the substrate from above in a noncontact manner.

36. An exposure apparatus for exposing a substrate with illumination light via an optical system, the exposure apparatus comprising:

a drive system that moves the stage;

and a controller that controls the drive system so that the stage moves from under the optical system to an unload position set between the optical system and the detection system to carry out the substrate from the stage, and that moves the stage from one side to the other side in the 1 st direction with respect to the detection system during a detection operation of the substrate by the detection system.

37. The exposure apparatus according to claim 36, wherein the substrate carried out of the stage is transferred to the conveyance system via a standby position different from the unloading position.

38. The exposure apparatus according to claim 36 or 37 wherein the controller controls the drive system to move the stage from one side to the other side in the 1 st direction to expose a 1 st area of the substrate on one side in the 2 nd direction and to move the stage from the other side to one side in the 1 st direction to expose a 2 nd area of the substrate on the other side in the 2 nd direction in the exposure operation.

39. The exposure apparatus according to any one of claims 31 to 38, wherein the conveyance system has a support member that can support the substrate from a surface side thereof in a non-contact manner;

the substrate is carried into the stage arranged at the loading position via the support member.

40. The exposure apparatus according to claim 39, wherein the support member is used for at least one of temperature adjustment, pre-alignment, and deformation control of the substrate.

41. An exposure apparatus for exposing a substrate with illumination light via an optical system, the exposure apparatus comprising:

a stage having a holder for holding the substrate;

a carrying system which has a 1 st supporting member capable of supporting the substrate from the surface side in a non-contact manner and carries the substrate to a loading position set apart from the optical system;

a 2 nd support member capable of supporting the substrate supported by the 1 st support member in a noncontact manner from a back surface side thereof; and

a driving device which is provided with a driving device for moving the 1 st and 2 nd supporting members up and down;

the substrate supported by the 1 st support member in a non-contact manner from above is supported by the 2 nd support member from below above the stage arranged at the loading position, and the substrate is placed on the holder by lowering the 2 nd support member by the driving device and releasing the support of the substrate by the 2 nd support member.

42. The exposure apparatus according to claim 41, wherein at least one of deformation control, temperature adjustment, and pre-alignment of the substrate is performed using the 1 st support member.

43. The exposure apparatus according to claim 41 or 42, wherein at least one of a repulsive force and an attractive force of the 1 st support member to the substrate is controlled to control deformation of the substrate.

44. The exposure apparatus according to any one of claims 41 to 43, further comprising a holding member that holds the substrate supported by the 1 st support member in a non-contact manner in contact from a portion different from the surface thereof and that can release the contact holding of the substrate when the substrate is supported by the 2 nd support member.

45. The exposure apparatus according to any one of claims 41 to 44, wherein the 1 st support member includes a clamp member that holds the substrate in a non-contact manner, and a temperature adjustment member of the substrate;

the substrate is supported by the clamp member in a non-contact manner, and the temperature of the substrate is adjusted by the temperature adjusting member.

46. The exposure apparatus according to claim 45, wherein the clamp member includes a Bernoulli clamp that uses a Bernoulli effect.

47. The exposure apparatus according to any one of claims 41 to 46, further comprising a measurement system that measures positional information of the substrate;

before the substrate is held by the holder, positional information of the substrate is measured by the measurement system.

48. The exposure apparatus according to any one of claims 41 to 47, wherein the conveyance system has a conveyance member that conveys the substrate to below the 1 st support member.

49. An exposure apparatus for exposing a substrate with illumination light via an optical system, the exposure apparatus comprising:

a stage having a holder for holding the substrate;

a conveying system having a 1 st supporting member for supporting the substrate from the front surface side in a non-contact manner;

a 2 nd support member which supports the substrate in contact from the back surface side thereof and is different from the 1 st support member; and

and a driving device for relatively moving at least the 1 st and 2 nd support members and the holder in a vertical direction so as to place the substrate on the holder.

50. The exposure apparatus according to claim 49 wherein the 2 nd support member is provided on the stage and supports the substrate in contact from a back surface side thereof.

51. The exposure apparatus according to claim 50 wherein the drive device includes a 1 st drive unit that is provided in the conveyance system and that moves the 1 st support member relative to the holder, and a 2 nd drive unit that is provided in the stage and that moves the 2 nd support member relative to the holder.

52. The exposure apparatus according to any one of claims 49 to 51, further comprising a controller that controls the conveyance system and the driving device;

the controller controls at least one of the handling system and the driving device to control deformation of the substrate.

53. The exposure apparatus according to claim 52, wherein the controller controls at least one of a repulsive force and an attractive force of the 1 st support member to displace at least a part of the substrate in a vertical direction.

54. The exposure apparatus according to claim 53, wherein the substrate is applied with the force in the vertical direction in a state of being placed on the holder or supported in a non-contact manner by the 1 st support member.

55. An exposure apparatus for exposing a substrate with illumination light via an optical system, the exposure apparatus comprising:

a stage having a holder for holding the substrate;

a displacement device that displaces at least a part of the substrate supported by the 1 st support member in a vertical direction; and

a drive device that relatively moves at least the 1 st support member and the holder in a vertical direction so that the substrate supported by the 1 st support member is placed on the holder;

before the substrate is held by the holder, the substrate is displaced by the displacement device.

56. The exposure apparatus according to claim 55, wherein the displacement device includes at least the 1 st support member;

the exposure apparatus further has a controller that controls the 1 st support member to displace at least a part of the substrate in a vertical direction.

57. The exposure apparatus according to claim 56, wherein the controller controls at least one of a repulsive force and an attractive force of the 1 st support member to the substrate to control deformation of the substrate.

58. The exposure apparatus according to any one of claims 55 to 57, wherein the displacement means comprises a contact member that can contact the substrate supported by the 1 st support member from below;

the controller adjusts a vertical direction positional relationship between the substrate supported by the 1 st support member and the contact member to displace at least a part of the substrate in a vertical direction.

59. The exposure apparatus according to claim 58, wherein the contact member comprises a 2 nd support member which is provided on the stage so as to be movable relative to the holder, and which is capable of supporting the substrate supported by the 1 st support member from below.

60. An exposure apparatus for exposing a substrate with illumination light via an optical system, the exposure apparatus comprising:

a substrate stage having a holder for holding the substrate;

a drive device that moves the 1 st support member and the holder relative to each other at least in a vertical direction so that the substrate supported by the 1 st support member is placed on the holder; and

a controller that controls the 1 st support member so as to apply a downward force from above to at least a part of the substrate via the 1 st support member.

61. The exposure apparatus according to claim 60, wherein the downward force is applied to the substrate in a state where the substrate is placed on the holder or supported by the 1 st support member in a non-contact manner.

62. An exposure apparatus for exposing a substrate with illumination light via an optical system, the exposure apparatus comprising:

a stage having a holder for holding the substrate;

a drive device that moves the substrate and the holder relative to each other to carry the substrate into the stage disposed at the loading position; and

a controller that controls the 1 st support member to control deformation of the substrate.

63. The exposure apparatus according to claim 62, wherein the controller controls at least one of an attractive force and a repulsive force of the 1 st support member to deform at least a part of the substrate.

64. The exposure apparatus according to any one of claims 49 to 63, wherein the conveyance system includes at least one of a pre-alignment device and a temperature adjustment device for the substrate, and at least a part of each of the pre-alignment device and the temperature adjustment device is provided on the 1 st support member.

65. The exposure apparatus according to any one of claims 31 to 64, further comprising: a holder holding the optical system; and

a rack different from the rack for supporting at least a part of the carrying system.

66. A device manufacturing method, comprising:

an act of exposing the substrate by the exposure apparatus according to any one of claims 31 to 65; and

and developing the substrate after exposure.