HK1136878B - Exposure apparatus, exposure method, and device manufacturing method - Google Patents

Description

Exposure apparatus, exposure method, and device manufacturing method

Technical Field

The present invention relates to an exposure apparatus, an exposure method, and a device manufacturing method, and more particularly, to an exposure apparatus and an exposure method used in a photolithography process for manufacturing a microdevice such as a semiconductor device, and a device manufacturing method using the exposure method.

Background

Conventionally, in a photolithography process for manufacturing electronic devices (microdevices) such as semiconductor devices (integrated circuits and the like) and liquid crystal display devices, exposure apparatuses such as a step & repeat (step & repeat) type projection exposure apparatus (so-called stepper) and a step & scan (step & scan) type projection exposure apparatus (so-called scanning stepper (also called scanner)) have been mainly used.

Such an exposure apparatus is required to have a high throughput. As a method for increasing throughput, various double-stage exposure apparatuses have been proposed (see, for example, specification of U.S. patent No. 6,262,796) which employ a method in which a plurality of, for example, 2 wafer stages for holding wafers are provided and parallel processing with different operations is performed on the 2 stages.

Recently, a twin-stage exposure apparatus using a liquid immersion method has been proposed (see, for example, U.S. Pat. No. 7,161,659).

However, for example, in the case where the exposure apparatus described in U.S. Pat. No. 7,161,659 includes 2 wafer stages, there is a position at which the interferometer system for measuring the position of the wafer stage cannot perform measurement while each wafer stage is moving between the exposure position (the position below the projection lens) and the position at which the wafer is replaced (and wafer alignment is performed).

Disclosure of Invention

The present invention has been made in view of the above circumstances, and a 1 st aspect of the present invention provides an exposure apparatus for exposing an object with an energy beam, comprising: a movable body that holds the object thereon and is movable substantially along a predetermined plane within a region of a predetermined range including 1 st, 2 nd, and 3 rd regions, wherein the 1 st region includes an exposure position at least exposing the loaded object, the 2 nd region is located on the 1 st direction side of the 1 st region at least performing replacement of the object, and the 3 rd region is located between the 1 st and 2 nd regions; a 1 st grating section disposed at a position corresponding to the 3 rd region on a plane parallel to the predetermined plane, opposite to a surface of the moving body substantially parallel to the predetermined plane; and a measuring device comprising: an encoder system having an encoder head provided on a surface of the movable body, and measuring positional information of the movable body in the predetermined plane based on an output of the encoder head facing the 1 st grating section; and an interferometer system for irradiating a measuring beam to a reflecting surface provided on the movable body and measuring positional information of the movable body at least in the 1 st area and the 2 nd area, wherein the 3 rd area includes a moving path of the movable body where the measuring beam is separated from the reflecting surface.

Accordingly, the encoder system included in the measuring apparatus measures the positional information of the moving body moving between the 1 st area and the 2 nd area through the 3 rd area in the predetermined plane. Therefore, in the 3 rd region of the moving body moving path including the reflection surface provided on the moving body, the measuring beam of the interferometer system included in the measuring apparatus is separated, and the position of the moving body in the predetermined plane when the moving body moves between the 1 st region and the 2 nd region through the 3 rd region can be controlled by merely arranging the 1 st grating section at a position corresponding to the 3 rd region on the surface parallel to the predetermined plane.

The invention according to claim 2 provides a 2 nd exposure apparatus for exposing an object with an energy beam, comprising: a movable body that holds the object thereon and is movable substantially along a predetermined plane within a region of a predetermined range including 1 st, 2 nd, and 3 rd regions, wherein the 1 st region includes an exposure position at least exposing the loaded object, the 2 nd region is located on the 1 st direction side of the 1 st region at least performing replacement of the object, and the 3 rd region is located between the 1 st and 2 nd regions; 1 st, 2 nd and 3 rd grating sections respectively arranged at positions corresponding to the 1 st, 2 nd and 3 rd regions on a plane parallel to the predetermined plane, which faces a surface of the moving body substantially parallel to the predetermined plane; and a measuring device including an encoder system having an encoder head provided on a surface of the movable body, and measuring positional information of the movable body in the predetermined plane based on an output of the encoder head facing any one of the 1 st, 2 nd, and 3 rd grating portions.

Accordingly, the encoder system included in the measuring apparatus can measure the positional information of the movable body in the predetermined plane not only when the movable body moves within the 1 st area and the 2 nd area but also when the movable body moves between the 1 st area and the 2 nd area through the 3 rd area. Therefore, by disposing the 1 st, 2 nd, and 3 rd grating portions at positions corresponding to the 1 st, 2 nd, and 3 rd regions on a plane parallel to the predetermined plane, it is possible to control the position of the moving body in the predetermined plane not only when moving within the 1 st region and the 2 nd region but also when moving between the 1 st region and the 2 nd region through the 3 rd region, using only the encoder system included in the measuring apparatus.

The 3 rd aspect of the present invention provides a 3 rd exposure apparatus for exposing an object with an energy beam, comprising: a 1 st moving body that holds the object thereon and is movable substantially along a predetermined plane within a 1 st range including 1 st, 2 nd, and 3 rd regions, the 1 st region including an exposure position at least exposing the loaded object, the 2 nd region being located on a 1 st direction side of the 1 st region at least replacing the object, the 3 rd region being located between the 1 st and 2 nd regions; a 2 nd moving body that holds the object thereon and is movable substantially along a predetermined plane within a 2 nd range including the 1 st zone, a 4 th zone located on a 1 st direction side of the 1 st zone where at least replacement of the object is performed, and a 5 th zone between the 1 st zone and the 4 th zone; 1 st and 2 nd grating sections disposed at positions corresponding to the 3 rd and 5 th regions on a plane parallel to the predetermined plane, the positions being opposed to surfaces of the 1 st and 2 nd moving bodies substantially parallel to the predetermined plane, respectively; and a measuring device including an encoder system having a 1 st and a 2 nd encoder head provided on a surface of the 1 st moving body and a surface of the 2 nd moving body, respectively, and measuring positional information of the 1 st and the 2 nd moving bodies in the predetermined plane based on an output of the 1 st encoder head facing the 1 st grating portion and an output of the 2 nd encoder head facing the 2 nd grating portion, respectively.

Accordingly, the encoder system included in the measuring apparatus measures the positional information of the 1 st moving body moving between the 1 st zone and the 2 nd zone through the 3 rd zone in the predetermined plane. Further, positional information of the 2 nd moving body moving between the 1 st zone and the 4 th zone through the 5 th zone within a predetermined plane is measured by a measuring device. Therefore, by simply disposing the 1 st and 2 nd grating portions at positions corresponding to the 3 rd and 5 th regions on a plane parallel to the predetermined plane, the position of the 1 st moving object when the 1 st region moves between the 1 st region and the 2 nd region via the 3 rd region and the position of the 2 nd moving object when the 1 st region moves between the 1 st region and the 5 th region via the 4 th region can be controlled within the predetermined plane.

The 4 th aspect of the present invention provides the 1 st exposure method for exposing an object with an energy beam, comprising: a measurement step of measuring positional information of a movable body within a predetermined plane of a 3 rd region in a predetermined range including the 1 st, 2 nd and 3 rd regions, the movable body holding the object thereon and being movable substantially along a predetermined plane, based on an output of an encoder head provided on a surface of the movable body opposing a 1 st grating portion, the 1 st grating portion being located at a position corresponding to the 3 rd region on a plane parallel to the predetermined plane opposing a surface of the movable body substantially parallel to the predetermined plane, and measuring the positional information of the movable body at least in the 1 st and 2 nd regions using an interferometer system that irradiates a measurement beam onto a reflection surface provided on the movable body, the 1 st region including at least an exposure position to expose the loaded object, the 2 nd region being located on a 1 st direction side of the 1 st region, At least the object is replaced, and a 3 rd area is positioned between the 1 st area and the 2 nd area; the 3 rd region includes a moving path of the movable body from which the measuring beam exits the reflecting surface.

Accordingly, the position information of the moving body moving between the 1 st and 2 nd zones through the 3 rd zone in a predetermined plane is measured based on the output of the encoder head. Therefore, when the measuring beam of the interferometer system included in the measuring apparatus is deviated from the 3 rd region of the moving body moving path including the reflection surface provided on the moving body, and the 1 st grating portion is disposed only at a position corresponding to the 3 rd region on the surface parallel to the predetermined plane, the position of the moving body in the predetermined plane when the moving body moves between the 1 st region and the 2 nd region through the 3 rd region can be controlled.

The invention of claim 5 provides a 2 nd exposure method for exposing an object with an energy beam, comprising: a measurement step of measuring positional information of the movable body in a predetermined plane based on an output of the encoder head within a predetermined range including the 1 st, 2 nd and 3 rd regions, wherein the moving body holds the object thereon and is movable substantially along a predetermined plane, the encoder reading head is provided on a surface of the moving body opposite to any one of the 1 st, 2 nd, and 3 rd grating portions, the 1 st, 2 nd, and 3 rd grating parts are located at positions corresponding to the 1 st, 2 nd, and 3 rd regions on a plane parallel to the predetermined plane, which is opposite to a surface of the moving body substantially parallel to the predetermined plane, the 1 st region includes at least an exposure position for exposing the loaded object, the 2 nd region is located on one side of the 1 st region in the 1 st direction and at least performs replacement of the object, and the 3 rd region is located between the 1 st region and the 2 nd region.

Accordingly, the output of the encoder head can measure the positional information of the movable body in the predetermined plane not only when the movable body moves within the 1 st region and the 2 nd region but also when the movable body moves between the 1 st region and the 2 nd region through the 3 rd region. Therefore, by disposing the 1 st, 2 nd, and 3 rd grating portions at positions corresponding to the 1 st, 2 nd, and 3 rd regions on a plane parallel to the predetermined plane, it is possible to control the position of the moving body in the predetermined plane not only when moving within the 1 st region and the 2 nd region but also when moving between the 1 st region and the 2 nd region through the 3 rd region, using only the encoder system included in the measuring apparatus.

The present invention in its 6 th aspect provides a 3 rd exposure method for exposing an object with an energy beam, comprising: a measurement step of measuring positional information of a 1 st and a 2 nd moving bodies in a 3 rd and a 5 th regions, respectively, based on outputs of the 1 st and the 2 nd encoder heads, wherein the 1 st moving body holds the object thereon and is movable substantially along a predetermined plane within a 1 st range including the 1 st, the 2 nd and the 3 rd regions, the 1 st region including an exposure position at which at least the loaded object is exposed, the 2 nd region being located on a 1 st direction side of the 1 st region and at least the object is replaced, the 3 rd region being located between the 1 st and the 2 nd regions; a 2 nd moving body holding the object thereon and being movable substantially along a predetermined plane within a 2 nd range including the 1 st zone, a 4 th zone located on a 1 st direction side of the 1 st zone where at least replacement of the object is performed, and a 5 th zone between the 1 st zone and the 4 th zone; the 1 st and 2 nd encoder heads are provided on a surface of the 1 st moving body opposing the 1 st grating portion and a surface of the 2 nd moving body opposing the 2 nd grating portion, respectively, and the 1 st and 2 nd grating portions are located at positions corresponding to the 3 rd and 5 th regions on a plane parallel to the predetermined plane opposing surfaces of the 1 st and 2 nd moving bodies substantially parallel to the predetermined plane, respectively.

Accordingly, the position information of the 1 st moving body moving between the 1 st zone and the 2 nd zone through the 3 rd zone in the predetermined plane is measured based on the output of the 1 st encoder head. Further, position information of the 2 nd moving body moving between the 1 st and 4 th zones through the 5 th zone within a predetermined plane is measured based on the output read out by the 2 nd encoder. Therefore, by simply disposing the 1 st and 2 nd grating portions at positions corresponding to the 3 rd and 5 th regions on a plane parallel to the predetermined plane, the position of the 1 st moving object when the 1 st region moves between the 1 st region and the 2 nd region via the 3 rd region and the position of the 2 nd moving object when the 1 st region moves between the 1 st region and the 5 th region via the 4 th region can be controlled within the predetermined plane.

In another aspect, the invention provides a device manufacturing method comprising: exposing the object by using any one of the 1 st, 2 nd and 3 rd exposure methods of the present invention; and a step of developing the exposed object.

Drawings

Fig. 1 is a view schematically showing the configuration of an exposure apparatus according to embodiment 1.

Fig. 2(a) is a front view showing wafer stage WST1 of fig. 1; fig. 2(B) is a plan view showing wafer stage WST 1.

Fig. 3(a) is a front view showing wafer stage WST2 of fig. 1; fig. 3(B) is a plan view showing wafer stage WST 2.

Fig. 4(a) to 4(C) are views for explaining the transmission section.

Fig. 5 is a plan view showing a stage device provided in the exposure apparatus of fig. 1.

Fig. 6 is a diagram for explaining position measurement of a wafer stage using 3 multi-axis interferometers.

Fig. 7 is a block diagram showing a main configuration of an exposure apparatus control system according to an embodiment.

Fig. 8 is a view showing a state in which a wafer placed on wafer stage WST1 is exposed and the wafer is exchanged on wafer stage WST 2.

Fig. 9 is a view showing a state where a wafer mounted on wafer stage WST1 is exposed and a wafer alignment is performed on a wafer mounted on wafer stage WST 2.

Fig. 10 is a diagram showing a state in which wafer stage WST2 moves from the alignment region to the exposure region through the 2 nd waiting region along a path defined by the arrangement of the encoder head and the scale in accordance with the result of position measurement using the encoder.

Fig. 11 is a diagram showing a state in which movement of wafer stage WST1 and wafer stage WST2 to the parallel (scrub) position is completed.

Fig. 12 is a view showing a state in which a wafer placed on wafer stage WST2 is exposed and the wafer is replaced on wafer stage WST 1.

Fig. 13(a) and 13(B) are views for explaining a 1 st modification of embodiment 1.

Fig. 14 is a view for explaining a 2 nd modification of embodiment 1.

Fig. 15 is a diagram illustrating another modification.

Fig. 16 is a plan view showing a stage device of the exposure apparatus according to embodiment 2.

Fig. 17 is a view showing a state in which the exposure apparatus of embodiment 2 exposes a wafer mounted on wafer stage WST1 and aligns the wafer mounted on wafer stage WST 2.

Fig. 18 is a diagram showing a state in which wafer stage WST2 in the exposure apparatus according to embodiment 2 moves from the alignment area to the exposure area via the 2 nd waiting area along the path defined by the arrangement of the encoder head and the scale in accordance with the result of position measurement using the encoder.

Fig. 19 is a view showing a state where the movement of wafer stage WST1 and wafer stage WST2 to the parallel position is completed in the exposure apparatus according to embodiment 2.

Fig. 20 is a view showing a state in which a wafer placed on wafer stage WST2 is exposed and a wafer is exchanged on wafer stage WST1 in the exposure apparatus according to embodiment 2.

Fig. 21 is a view for explaining a 1 st modification of embodiment 2.

Fig. 22 is a view for explaining a 2 nd modification example of the 2 nd embodiment.

Fig. 23 is a diagram illustrating another modification of embodiment 2.

Detailed Description

Embodiment 1

Embodiment 1 of the present invention will be described below with reference to fig. 1 to 12.

Fig. 1 schematically shows a configuration of a double stage type exposure apparatus 100 according to embodiment 1. The exposure apparatus 100 is a projection exposure apparatus of a step-and-scan method, that is, a so-called scanner. As will be described later, the present embodiment is provided with the projection optical system PL and the alignment system ALG, and hereinafter, a direction parallel to the optical axis AX of the projection optical system PL is referred to as a Z-axis direction, a direction parallel to a straight line connecting the center of the projection optical system PL (the optical axis AX) and the detection center of the alignment system ALG (the optical axis AXp) within a plane orthogonal to the Z-axis direction is referred to as a Y-axis direction, a direction orthogonal to the Z-axis and the Y-axis is referred to as an X-axis direction, and directions of rotation (inclination) about the X-axis, the Y-axis, and the Z-axis are referred to as θ X, θ Y, and θ Z directions, respectively.

Exposure apparatus 100 includes illumination system 10, reticle stage RST, projection unit PU, local immersion unit 8, alignment system ALG, stage device 50, and control systems for these. In fig. 1, 2 wafer stages WST1 and WST2 constituting stage device 50 are located below projection unit PU and below alignment system ALG, respectively. Wafers W1 and W2 are mounted on wafer stages WST1 and WST2, respectively.

The illumination system 10 includes a light source, an illumination uniformizing optical system having an optical integrator and the like, and an illumination optical system having a reticle blind and the like (none of which are shown), as disclosed in, for example, U.S. patent application publication No. 2003/0025890 and the like. The illumination system 10 illuminates a slit-shaped illumination region IAR set on a reticle R by a reticle blind (also referred to as a mask system) with illumination light (exposure light) IL at a substantially uniform illuminance. Here, as an example, an ArF excimer laser beam (wavelength 193nm) is used as the illumination light IL.

A reticle R having a pattern surface (lower surface in fig. 1) on which a circuit pattern and the like are formed is fixed to reticle stage RST by, for example, vacuum suction. Reticle stage RST can be driven slightly in the XY plane by reticle stage driving system 11 (not shown in fig. 1, see fig. 7) including, for example, a linear motor or the like, and can be driven in the scanning direction (the Y-axis direction in the left-right direction in the drawing plane of fig. 1) at a predetermined scanning speed.

Positional information (including rotation information in the θ z direction) of reticle stage RST in the XY plane (moving surface) is constantly detected by reticle laser interferometer (hereinafter referred to as "reticle interferometer") 116, for example, at a resolution of about 0.25nm via moving mirror 15 (actually, a Y moving mirror (or a retro-mirror) having a reflecting surface orthogonal to the Y axis direction and an X moving mirror having a reflecting surface orthogonal to the X axis direction). The position information of reticle interferometer 116 is transmitted to main controller 20 (not shown in fig. 1, see fig. 7), and main controller 20 controls the position (and speed) of reticle stage RST based on the transmitted position information via reticle stage drive system 11.

Projection unit PU is disposed below reticle stage RST in fig. 1 (in the (-Z direction). A projection unit PU, comprising: a lens barrel 40, and a projection optical system PL held in the lens barrel 40. As the projection optical system PL, for example, a refractive optical system composed of a plurality of lenses (lens elements) arranged along an optical axis AX parallel to the Z-axis direction is used. The projection optical system PL is, for example, a two-side telecentric refractive optical system and has a predetermined projection magnification (for example, 1/4 times, 1/5 times, 1/8 times, or the like). Thus, when the illumination area IAR on the reticle R is illuminated with the illumination light IL from the illumination system 10, a reduced image of the circuit pattern of the reticle R in the illumination area IAR is formed on the area (hereinafter also referred to as exposure area) IA via the projection optical system PL (projection unit PU) by the illumination light IL of the reticle R which passes through the 1 st surface (object surface) of the projection optical system PL and the pattern surface thereof which are arranged substantially in agreement; this area IA is conjugate to an illumination area IAR on a wafer W1 (or W2) which is disposed on the 2 nd surface (image plane) side of the projection optical system PL and whose surface is coated with a resist (photosensitive agent). Then, by synchronously driving reticle stage RST and wafer stage WST1 (or WST2), reticle R is moved in the scanning direction (Y-axis direction) with respect to illumination area IAR (illumination light IL), and wafer W1 (or W2) is moved in the scanning direction (Y-axis direction) with respect to exposure area (illumination light IL), whereby an irradiation area (shot area) (divided area) on wafer W1 (or W2) is subjected to scanning exposure, and the pattern of the reticle is transferred to the irradiation area. That is, in the present embodiment, after a pattern is generated on the wafer W1 (or W2) by the illumination system 10, the reticle R, and the projection optical system PL, the pattern is formed on the wafer W by exposing the photosensitive layer (resist layer) on the wafer W1 (or W2) to the illumination light IL.

The exposure apparatus 100 of the present embodiment is provided with a local liquid immersion apparatus 8 for performing liquid immersion type exposure. The local immersion apparatus 8 includes a liquid supply apparatus 5, a liquid recovery apparatus 6 (both not shown in fig. 1 and see fig. 7), a liquid supply pipe 31A, a liquid recovery pipe 31B, a nozzle unit 32, and the like. As shown in fig. 1, the nozzle unit 32 is suspended and supported by a main frame, not shown, which holds the projection unit PU, so as to surround and hold the lower end of the lens barrel 40 which holds the optical element closest to the image plane side (wafer side) constituting the projection optical system PL, in this case, a lens (hereinafter, also referred to as a tip lens) 191. In the present embodiment, as shown in fig. 1, the lower end surface of the nozzle unit 32 is set to be substantially flush with the lower end surface of the distal end lens 191.

The liquid supply pipe 31A is connected to the liquid supply device 5 (not shown in fig. 1, see fig. 7), and the liquid recovery pipe 31B is connected to the liquid recovery device 6 (not shown in fig. 1, see fig. 7). Here, the liquid supply device 5 includes a liquid tank for storing liquid, a pressure pump, a temperature control device, a valve for controlling the flow rate of the liquid, and the like. The liquid recovery device 6 includes a liquid reservoir for storing the recovered liquid, a suction pump, a valve for controlling the flow rate of the liquid, and the like.

The main controller 20 controls the liquid supply device 5 (see fig. 7) to supply the liquid between the front lens 191 and the wafer W1 (or W2) through the liquid supply pipe 31A, and controls the liquid recovery device 6 (see fig. 7) to recover the liquid between the front lens 191 and the wafer W1 (or W2) through the liquid recovery pipe 31B. In these operations, the main control device 20 controls the liquid supply device 5 and the liquid recovery device 6 so that the amount of liquid supplied and the amount of liquid recovered are always equal. Therefore, the liquid immersion area 14 is formed by replacing and holding a certain amount of the liquid Lq in the space between the front end lens 191 and the wafer W1 (or W2) as needed (see, for example, fig. 6 and 8). The exposure apparatus 100 according to the present embodiment irradiates the wafer W1 (or W2) with the illumination light IL through the liquid Lq forming the liquid immersion area 14 to expose the wafer W1 (or W2). Here, the liquid immersion area 14 is a three-dimensional space filled with the liquid Lq, which should be referred to as a liquid space, but since the space also has a meaning of a void, a term of the liquid immersion area is used in the present specification to avoid misunderstanding.

The liquid is, for example, pure water which transmits an ArF excimer laser beam (light having a wavelength of 193 nm). The refractive index n of the ArF excimer laser beam with respect to pure water is approximately 1.44, and the wavelength of the illumination light IL in pure water is shortened to about 193nm × 1/n to about 134 nm.

The alignment system ALG is disposed at a position separated by a predetermined distance from the center of the projection unit PU (the optical axis AX of the projection optical system PL (in the present embodiment, coincides with the center of the exposure area IA)) on the-Y side, and is held by a main frame (not shown). Here, the Alignment system ALG uses, for example, a Field Image Alignment (FIA) system of an Image processing system. The alignment system ALG images a reference mark on the wafer stage WST1 or WST2 or an alignment mark (wafer mark) on the wafer in accordance with an instruction from the main control device 20 when performing wafer alignment or the like, and supplies the imaging signal to the main control device 20 via a signal processing system (not shown) (see fig. 7).

In addition, in the exposure apparatus 100 of the present embodiment, a multipoint focus position detection system (hereinafter, simply referred to as a multipoint AF system) AF (not shown in fig. 1, see fig. 7) having the same configuration as that disclosed in, for example, U.S. Pat. No. 5,448,332 is provided in the vicinity of the projection unit PU. Here, as the multipoint AF system, the following system is used: the detection beam from the irradiation system is irradiated onto a plurality of detection points on the surface of the wafer W1 (or W2) via the liquid Lq formed in the light transmission section and the liquid immersion area (not shown) of the nozzle unit 32, and the reflected light of the detection beam from the plurality of detection points is received by the light receiving system via another light transmission section formed in the nozzle unit 32. The detection signal of the multi-point AF system AF is supplied to the main controller 20 (see fig. 7) via an AF signal processing system (not shown). The main controller 20 detects position information of the surface of the wafer W in the Z-axis direction at each detection point based on a detection signal of the multi-point AF system AF, and performs so-called focus leveling (focus leveling) control of the wafer W during scanning exposure based on the detection result. Further, a multipoint AF system may be provided in the vicinity of the alignment detection system ALG, surface position information (concave-convex information) of the wafer surface may be acquired in advance at the time of wafer alignment, and during exposure, so-called focus leveling control of the wafer W may be performed using the surface position information and a measurement value of another sensor that detects the position of the upper surface of the wafer stage in the Z-axis direction.

Further, exposure apparatus 100 is provided with a Reticle alignment detection system 13 (not shown in fig. 1, see fig. 7) configured by a pair of TTR (Through The Reticle) alignment systems using light of an exposure wavelength above Reticle stage RST. The detection signal of the reticle alignment detection system 13 is supplied to the main controller 20 (see fig. 7) via an alignment signal processing system (not shown).

As shown in fig. 1, stage device 50 includes: wafer stages WST1 and WST2 arranged above base plate 12, measurement system 200 (see fig. 7) for measuring positional information of wafer stages WST1 and WST2, and stage drive system 124 (see fig. 7) for driving wafer stages WST1 and WST 2. The measurement system 200, as shown in fig. 7, includes an interferometer system 118, an encoder system 150, and the like.

Wafer stages WST1 and WST2 are supported in a floating manner above base plate 12 with a gap of several μm or so, respectively, by an air slider described later. Wafer stages WST1 and WST2 are driven in the XY plane along the upper surface (movement guide surface) of base plate 12 by a planar motor described later constituting stage drive system 124. Wafer stage WST1 moves within the 1 st movement range including a movement area AE during exposure, a parallel (scrub) state movement area AS, a 1 st waiting area AW1, and an alignment area AA, which will be described later. Wafer stage WST2 moves within the 2 nd movement range including the exposure movement area AE, the parallel state movement area AS, the 2 nd waiting area AW2, and the alignment area AA.

Wafer stage WST1 includes a stage main body 91 and a wafer table WTB1 mounted on stage main body 91, as shown in fig. 1 and 2 (a). As shown in fig. 2(a), the stage main body 91 includes a stator 52 provided inside the chassis 12, a mover 56 constituting the planar motor 51, and an air slider 54 integrally provided around the lower half portion of the mover 56 and having a plurality of air bearings.

The movable element 56 is constituted by, for example, a magnet unit including a planar magnetic generator constituted by a plurality of planar magnets arranged in a matrix so that the polarities of adjacent magnetic pole surfaces are different from each other.

On the other hand, the stator 52 is formed of an armature unit having a plurality of armature coils (driving coils) 57 arranged in a matrix inside the chassis 12. In the present embodiment, the armature coil 57 is provided with an X drive coil and a Y drive coil. The stator 52 and the movable element 56 constitute a magnetic rotary (movingmagnetic) type flat motor 51 of an electromagnetic drive system (lorentz force drive system).

The plurality of armature coils 57 are covered with a flat plate-like member 58 constituting the upper surface of the chassis 12. The upper surface of flat plate-like member 58 constitutes a movement guide surface of wafer stage WST1 (and WST2) and a pressure receiving surface of pressurized air from an air bearing provided in air slide 54.

Wafer table WTB1 is provided on stage main body 91 via a Z leveling mechanism (including, for example, a voice coil motor) constituting a part of stage drive system 124. Wafer table WTB1 is micro-driven in the Z-axis direction, the θ x direction, and the θ y direction with respect to stage main body 91 by the Z leveling mechanism. Therefore, wafer table WTB1 can be driven in the 6-degree-of-freedom direction (X, Y, Z, θ x, θ y, θ Z) with respect to base plate 12 by stage drive system 124 including plane motor 51 and Z leveling mechanism.

A wafer holder (not shown) for holding a wafer by vacuum suction or the like is provided at the center of the upper surface of wafer table WTB 1. As shown in fig. 2B, a plate 28 having a circular opening at the center thereof, which is one turn larger than the wafer holder, and having a rectangular outer shape (contour) is provided outside the wafer holder (wafer placement region). The surface of the plate member 28 forms a liquid-repellent surface to which a liquid-repellent treatment for the liquid Lq is applied. The plate 28 is set such that the entire surface (or a part thereof) thereof is substantially flush with the surface of the wafer W.

A circular opening is formed near the + X end on the + Y side of the plate 28, and a fiducial mark plate FM1 is inserted into the circular opening. Fiducial marker plate FM1, the surface of which is set substantially flush with plate 28. On the surface of fiducial mark plate FM1, at least a pair of 1 st fiducial marks detected by reticle alignment detection system 13 and 2 nd fiducial marks detected by alignment system ALG are formed.

As shown in fig. 2(B), a plate-like brim 23a protruding from the other part is provided at the-Y end of the wafer table WTB1 on the + X side. The entire upper surface of wafer table WTB1 is substantially flush, including wafer W1 and lip 23 a.

Wafer stage WST2 includes a stage main body 91 and a wafer table WTB2, and has the same configuration as wafer stage WST1, as shown in fig. 1, 3(a), 3(B), and the like. However, in wafer stage WST2, fiducial mark FM2 is provided on the upper surface of wafer table WTB2, and eaves 23b are provided in a substantially symmetrical arrangement with respect to eaves 23a of wafer table WTB1, in a symmetrical arrangement with respect to the arrangement of fiducial marks FM1 on wafer table WTB 1.

Next, the function and the like of the eaves 23a and 23b will be described in detail.

Fig. 4(a) shows an enlarged view of the eaves 23a provided on the wafer table WTB1 and the eaves 23b provided on the wafer table WTB 2. As shown in fig. 4(a), the eaves 23a is formed of a substantially flat plate-like portion protruding from the + X-side upper end of the wafer table WTB1, and has a protruding portion whose upper half protrudes beyond the lower half at the front end thereof. On the other hand, the eaves 23b is formed of a substantially flat plate-like portion protruding from the-X-side upper end portion of the wafer table WTB2, and has a convex portion formed at its distal end portion, the lower half portion of the convex portion protruding from the upper half portion and engaging with the convex portion of the eaves 23a, and in this engaged state, the entire eaves is formed as a plate-like portion as shown in fig. 4 (a).

As is clear from fig. 4(a), the tips of eaves 23a and 23b are located at the + X-side end of wafer stage WST1 and the-X-side end of wafer stage WST1, respectively. The total length of eaves 23a and 23b in the state where eaves 23a and 23b are engaged with each other is set to a length sufficient to prevent contact between wafer stage WST1 and wafer stage WST2 (more precisely, to prevent contact between the + X side of pneumatic slider 54 of wafer stage WST1 and the-X side of pneumatic slider 54 of wafer stage WST2) even if the front end portion overlaps partially. In this case, in the state where eaves 23a and 23b are engaged with each other, as shown in fig. 4 a, contact between mirror 27f (described in detail below) protruding from the + X-side end of wafer stage WST1 and mirror 27e (described in detail below) protruding from the-X-side end of wafer stage WST2 is prevented, in addition to contact between air sliders 54. That is, the protruding length of each of eaves 23a and 23b is not particularly problematic, and it is sufficient that contact between wafer stage WST1 and wafer stage WST2 (more precisely, contact between the + X-side end of air slide 54 of wafer stage WST1 and the-X-side end of air slide 54 of wafer stage WST2) and contact between mirror 27f and mirror 27e can be avoided in a state where eaves 23a and 23b are engaged with each other.

In the present embodiment, in a state where wafer stages WST1 and WST2 are close to or in contact with each other, more precisely, in a state where eave portion 23a and eave portion 23b are close to or in contact with each other (that is, in a state where both wafer stages are arranged in parallel), eave portion 23a and eave portion 23b are completely covered with reflecting surface 27f and reflecting surface 27 e. At this time, the upper surfaces of wafer table WTB1 and wafer table WTB2, including the upper surfaces of eaves 23a and 23b, are substantially flush (completely flat) as a whole (see fig. 4 a). Here, the brim 23a and the brim 23b are close to each other, and for example, the brim 23a and the brim 23b are close to each other with a gap of about 300 μm or less.

The width (length in the Y-axis direction) of the brim 23a is set to be sufficiently larger than the width (length in the Y-axis direction) of the liquid immersion area 14, as shown in fig. 5 and the like. Therefore, for example, after the exposure of wafer W1 mounted on wafer table WTB1 is completed, in order to start the exposure of wafer W2 mounted on wafer table WTB2, wafer stage WST1 located in exposure movement area AE (see fig. 8) near projection optical system PL needs to be retracted outside exposure movement area AE (see fig. 8), and wafer stage WST2 waiting at a predetermined waiting position needs to be moved to exposure movement area AE. At this time, as shown in fig. 11, main controller 20 engages eaves 23a and 23b of wafer stages WST1 and WST2, respectively, so that wafer stages WST1 and WST2 approach or contact each other in the X-axis direction. While this state (parallel state) is maintained, main controller 20 drives both wafer stages WST1 and WST2 in the-X direction, thereby moving liquid immersion area 14 sequentially over the surfaces of wafer table WTB1, eaves 23a, eaves 23b, and wafer table WTB 2. Of course, the liquid immersion area 14 may be moved in the opposite direction.

AS shown in fig. 11, for example, parallel state movement area AS is an approximate range in which wafer stages WST1 and WST2 move while maintaining the parallel state. For example, as shown in fig. 9, the movement area AE during exposure is an approximate range of movement of the wafer on the wafer stage due to movement of the wafer stage during exposure, and the alignment area AA described later is an approximate range of movement of the wafer on the wafer stage due to movement of the wafer stage during wafer alignment.

When liquid immersion area 14 moves from above wafer table WTB1 to above wafer table WTB2 via eaves 23a and 23b, there is a possibility that liquid Lq forming liquid immersion area 14 may intrude into the gap between eaves 23a and eaves 23b and leak below wafer stage WST1 and/or WST2 via the side surfaces of wafer stage WST1 and/or WST 2. Therefore, for example, as shown in fig. 4(C), the sealing member 24 should be placed on a part of the surface of the brim 23b that engages with the brim 23a, a part of the surface of the brim 23a that engages with the brim 23b, or a part of the engaging surface of both the brim 23a and the brim 23 b. In this case, liquid Lq is prevented from entering the gap between eaves 23a and 23b by seal member 24 and from leaking to the lower side of wafer stage WST1 and/or WST 2. The sealing member 24 is an elastic sealing member made of, for example, fluororubber. Instead of attaching the sealing member 24, a water repellent coating such as Teflon (registered trademark) may be applied to the engaging surface between the brim 23a and the brim 23b and/or the engaging surface between the brim 23b and the brim 23 a.

In the present embodiment, as described above, the liquid immersion area 14 can be moved between the wafer tables WTB1, WTB2 via the eaves 23a, 23 b. In this movement, since the contact or proximity state of the eaves 23a and 23b is maintained, the liquid Lq in the liquid immersion area 14 can be prevented from leaking from the gap between the eaves 23a and 23 b. Therefore, liquid immersion area 14 can be moved between wafer tables WTB1, WTB2 without causing liquid Lq to wet mirrors 27f, 27 e. Accordingly, it is not necessary to perform a recovery operation for recovering the liquid Lq from the lower portion of the projection optical system PL, and the throughput can be improved as compared with a case where the liquid Lq is recovered and supplied.

Although the above description has been made for the case where eaves 23a and 23B are provided on wafer tables WTB1 and WTB2, respectively, the present invention is not limited to this, and as shown in fig. 4(B), eaves 23c may be provided on wafer table WTB1, and step 23d of fit-in eaves 23c may be provided on wafer table WTB 2. Alternatively, a step portion may be provided on wafer table WTB1, and a ridge portion may be provided on wafer table WTB 2. In this case, in the parallel state of two wafer stages WST1 and WST2 in which brim portion 23c is fitted to step portion 23d, the length of brim portion 23c is set to a length that can avoid contact between wafer stage WST1 and wafer stage WST2 and contact between mirror 27f and mirror 27 e.

Various measuring devices and measuring means such as a reference rod (CD rod), an illuminance unevenness measuring sensor, an aerial image measuring device, a wavefront aberration measuring device, and an illuminance monitor disclosed in, for example, international publication No. 2007/097379 may be provided in wafer stages WST1 and WST 2.

In the present embodiment, the wiring/piping cable is connected to the 1 st cable shuttle (not shown) provided on the-X side of base plate 12 (the movement guide surface of wafer stage WST1 and WST2) from the-X side end of wafer stage WST1 and movable in the Y-axis direction. Similarly, a cable for wiring/piping is connected from the + X side end of wafer stage WST2 to the 2 nd cable shuttle (not shown) provided on the + X side of base plate 12 and movable in the Y axis direction. These cables supply power to the Z leveling mechanism and the measuring device, and supply pressurized air to the air sliders provided in the two wafer stages WST1 and WST 2.

Next, interferometer system 118 that forms part of measurement system 200 is described.

As shown in fig. 2(B) and 3(B), reflection surfaces 27a, 27B, 27c, and 27d are formed on the-X-side end surface, + Y-side end surface, + X-side end surface, and-Y-side end surface of wafer tables WTB1 and WTB2, respectively. Mirrors 27e and 27f (inclined at 45 degrees to reflection surfaces 27a and 27c, respectively) are provided on the-X side and the + X side of wafer stages WST1 and WST2, respectively. As shown in fig. 1 and 5, rectangular plate-like reflection plates 25A and 25B are arranged on the + X side and the-X side of projection unit PU with their reflection surfaces facing wafer stages WST1 and WST2 (wafer tables WTB1 and WTB2), respectively, and their longitudinal directions are along the Y-axis direction. The reflection plates 25A and 25B are provided on the lower surface of a main frame that holds the projection unit PU and the like.

Interferometer system 118, as shown in FIG. 5, includes 4Y interferometers 16, 17, 18, 19 and 4 XZ interferometers 116, 117, 126, 127. The Y interferometers 16, 17, and 18 are disposed at different positions in the X-axis direction on the + Y side of the chassis 12. The Y interferometer 19 is disposed on the-Y side of the chassis 12 so as to face the Y interferometer 17. The XZ interferometers 116 and 117 are disposed on the-X side of the chassis 12 at a predetermined distance from each other in the Y-axis direction. Further, the XZ interferometers 126 and 127 are disposed on the + X side of the chassis 12 so as to face the XZ interferometers 116 and 127, respectively.

Specifically, as shown in fig. 6, the Y interferometer 17 irradiates 2 measuring beams B17 parallel to the Y axis onto the reflection surface 27B of the wafer table WTB1 (or WTB2)₁、B17₂The 2 measuring beams and a line (reference axis) LV connecting the optical axis AX of the projection optical system PL and the detection center of the alignment system ALG and parallel to the Y axis₀Receiving measuring beams B17 at equal distances from each other in the + -X direction₁、B17₂To measure the reflection of the reflection surface 27B at the measuring beam B17₁、B17₂The irradiation point of (2) is shifted in the Y-axis direction (1 st and 2 nd position information). The 1 st and 2 nd position information is sent to the main control device 20. The main controller 20 calculates the position (Y position) of the wafer table WTB1 (or WTB2) in the Y-axis direction based on the average value of the 1 st and 2 nd position information. That is, the substantial measurement axis and the reference axis LV of the Y interferometer 17 in the Y-axis direction₀And (5) the consistency is achieved. Further, main controller 20 calculates rotation information (yaw) of wafer table WTB1 (or WTB2) in the θ z direction based on the difference between the 1 st and 2 nd position information.

The Y interferometer 17 and the measuring beam B17₁、B17₂Irradiating the reflecting surface 27b with a predetermined distance in the-Z directionAnother measuring beam B17₃And receives the measuring beam B17₃To measure the reflection of the reflection surface 27B at the measuring beam B17₃The displacement of the irradiation point in the Y axis direction (referred to as 3 rd position information) is sent to the main controller 20. Based on the 3 rd position information and the 1 st and 2 nd position information, main controller 20 calculates rotation information (pitch) of wafer table WTB1 (or WTB2) in the θ x direction.

The Y interferometers 16, 18, and 19 are used to measure the Y position, the pitch amount, and the yaw amount of one or both of the wafer tables WTB1 and WTB2, similarly to the Y interferometer 17. Y interferometers 16, 18 each have a reference axis LV₀Parallel measuring axes LV₁、LV₂. The reference axis LV₀As a substantial measurement axis of the Y interferometer 19, the Y interferometer 19 irradiates 3 measurement beams on the reflection surface 27d of the wafer stage WTB1 (or WTB 2).

The XZ interferometers 116 and 126 are arranged to be aligned with the optical axis AX and the reference axis LV of the projection optical system PL₀The orthogonal reference axis LH is used as the measurement axis in the X-axis direction. That is, the XZ interferometer 116, as shown in FIG. 6, measures the beam B116 along a measurement axis LH₁Irradiates the reflection surface 27a of the wafer table WTB1 (or WTB2), and receives the measurement beam B116 on the reflection surface 27a₁So as to measure the reflection surface 27a on the measuring beam B116₁The irradiation point of (4 th position information). Similarly, XZ interferometer 126 measures beam B126 along measurement axis LH₁Irradiates the reflection surface 27c of the wafer table WTB1 (or WTB2), and receives the measurement beam B126 on the reflection surface 27c₁To measure the reflection of the reflection surface 27c on the measuring beam B126₁The irradiation point of (2) is displaced in the X-axis direction (as the 5 th position information). The 4 th and 5 th position information is sent to the main control device 20. The main controller 20 calculates the X position of the wafer table WTB1 (or WTB2) based on the 4 th and 5 th position information.

The XZ interferometer 116 measures a measuring beam (Z measuring beam) B116 in parallel with the measuring axis LH₂The light is irradiated onto the reflection surface of the mirror 27e provided on the wafer table WTB1 (or WTB 2). Measuring beam B116₂Is reflected by the mirror 27e toward + ZThe light is directed to the reflection surface of the reflection plate 25B. Measuring beam B116 from the reflecting surface of the reflecting plate 25B₂The reflected light of (2) is received by the XZ interferometer 116 back to the original optical path. The XZ interferometer 116 measures the measuring beam B116₂The optical path length (change) of (b), and the measurement result is sent to the main control device 20. Similarly, the XZ interferometer 126 couples a measuring beam (Z measuring beam) B126 in parallel with the measuring axis LH₂The light is irradiated to the reflection surface of the mirror 27f provided on the wafer table WTB1 (or WTB 2). Measuring beam B126₂Reflected by the mirror 27f in the + Z direction and irradiated on the reflection surface of the reflection plate 25A. Measuring beam B126 from the reflection surface of the reflection plate 25A₂The reflected light of (2) is received by the XZ interferometer 126 tracing back to the original optical path. XZ interferometer 126 measures measuring beam B126₂The optical path length (change) of (b), and the measurement result is sent to the main control device 20.

A main controller 20 for obtaining the measuring beam B116 from the 4 th position information₁And the measuring beam B116₂The difference in optical path length of (2) to calculate a measuring beam B116₂The Z position (denoted as Ze) of the irradiation point on the reflection surface of the mirror 27 e.

The main controller 20 obtains the measuring beam B126 from the 5 th position information₁And the measuring beam B126₂The difference in optical path length of (2) to calculate the measuring beam B126₂The Z position (denoted as Zf) of the irradiation point on the reflection surface of the mirror 27 f. Further, the main controller 20 calculates rotation information (rolling amount) of the Z position of the wafer table WTB1 (or WTB2) and the θ y direction from the average value and the difference between the 2Z positions Ze and Zf.

Further, the XZ interferometers 116, 126 are parallel to the measurement axis LH but parallel to the measurement beam B116 in the-Z direction as shown in FIG. 6₁、B126₁The reflection surfaces 27a and 27c are irradiated with a measuring beam B116 at a predetermined distance from each other₃、B126₃. The XZ interferometers 116, 126 receive the measuring beam B116₃、B126₃So that the measuring reflection surfaces 27a, 27c measure the light beam B116₃、B126₃The irradiation point of (2) is displaced in the X-axis direction (i.e., the 6 th and 7 th position information). The 6 th and 7 th position information is sent to the main control device 20. The main controller 20 calculates the roll amount (θ y1) of the wafer table WTB1 (or WTB2) based on the 4 th position information and the 6 th position information. Further, main controller 20 calculates the roll amount (θ y2) of wafer table WTB1 (or WTB2) based on the 5 th position information and the 7 th position information. Further, the main controller 20 calculates the Z position of the wafer table WTB1 (or WTB2) based on the Z position (Ze) and the above-described rolling amount θ y 1. Further, the main controller 20 calculates the Z position of the wafer table WTB1 (or WTB2) based on the Z position (Zf) and the rolling amount θ y 2.

However, measuring beam B116₁、B116₃And measuring beam B126₁、B126₃Than the measuring beam (Z measuring beam) B116₂、B126₂The distance in the X axis direction of the irradiation point on the reflection surface of the mirrors 27e, 27f is short. Therefore, the accuracy of measuring the rolling amount of the wafer table WTB1 (or WTB2) and the measurement of the rolling amount using the Z measuring beam B116₂、B126₂The measurement of (a) is poor. Thus, master control device 20, in principle, uses Z measuring beam B116₂、B126₂Even if both XZ interferometers 116 and 126 are used to measure the position information (the amount of roll) in the θ y direction and the Z position of the wafer table WTB1 (or WTB2), the measurement is performed using only one of the XZ interferometers 116 and 126 as an alternative to the exception. Further, examples of the alternative method will be described later.

The XZ interferometers 117 and 127 are used for measuring the X position, the Z position, and the position (the amount of roll) in the θ y direction of the wafer table WTB1 (or WTB2) at the time of wafer alignment or the like, as in the XZ interferometers 116 and 126. In addition, the measurement method is to align the center of detection of the system ALG with the reference axis LV₀The measurement using the XZ interferometers 116 and 126 is performed with a reference axis LA (see fig. 5) orthogonal to and parallel to the X axis as the measurement axis.

As described above, by using interferometer system 118 including Y interferometers 16, 17, 18, 19 and XZ interferometers 116, 117, 126, 127, positional information in the 6-degree-of-freedom (X, Y, Z, θ x, θ Y, θ z) direction of wafer table WTB1 (or WTB2) can be measured. In addition, main controller 20 uses Y interferometer 17 and XZ interferometers 116 and 126 in a movement area AE during exposure, and uses Y interferometer 19 and XZ interferometers 117 and 127 in an alignment area AA (see fig. 9) near alignment system ALG where wafer stages WST1 and WST2 move during wafer alignment, according to the arrangement of the respective interferometers. Further, as shown in fig. 12, main controller 20 uses Y interferometer 16 and XZ interferometers 116, 126 or 117, 127 in a 1 st waiting area (area on the-X side of chassis 12) AW1 in which wafer stage WST1 is used to move back and forth between movement area AE and alignment area AA during exposure, and uses Y interferometer 18 and XZ interferometers 116, 126 or 117, 127 in a 2 nd waiting area (area on the + X side of chassis 12) AW2 in which wafer stage WST2 is used to move back and forth between movement area AE and alignment area AA during exposure, as shown in fig. 10.

In the present embodiment, an encoder system 150 (see fig. 7) is provided separately from the interferometer system 118 to measure positional information of the wafer table WTB1 (or WTB2) in the XY plane. Therefore, main controller 20 mainly uses interferometer system 118 to measure the position of wafer stage WTB1 (or WTB2), and encoder system 150 is used when wafer stage WST1 (or WST2) is outside the measurement region of interferometer system 118, as described below. Of course, main controller 20 may also perform position measurement in the XY plane of wafer table WTB1 (or WTB2) using interferometer system 118 and encoder system 150.

Next, the encoder system 150 constituting a part of the measurement system 200 will be described. Encoder system 150 can measure the positions (X, Y, θ z) of wafer stages WST1, WST2 in the XY plane independently from interferometer system 118. In the present embodiment, encoder system 150 is mainly used to measure the positions of both wafer stages WST1 and WST2 when wafer stages WST1 and WST2 move along the movement paths in waiting areas AW1 and AW 21 st and 2 nd, respectively, between movement area AE and alignment area AA during exposure.

Each of wafer stages WST1 and WST2 is mounted upward so as to emit a measuring beam upward (+ Z direction)Specifically, 2X heads each having an X-axis direction as a measurement direction and 1Y head each having a Y-axis direction as a measurement direction are mounted. More specifically, on the upper surface of wafer table WTB1, as shown in FIG. 2(B), X head EX is disposed so as to be adjacent to the-X side end and the vicinity of the-Y side end in the X-axis direction₁X head EX is arranged near the center of Y axis direction of the end part at X side with Y head EY₂。

As shown in fig. 3(B), X heads EX are mounted on the upper surface of wafer table WTB2 in a bilaterally symmetrical arrangement with the 3 heads on the upper surface of wafer table WTB1₁、EX₂And a Y head EY. For example, an interferometric encoder head disclosed in U.S. Pat. No. 7,238,931 is used as each encoder head.

In the present embodiment, the measuring beams emitted from the encoder heads mounted on wafer stages WST1 and WST2 are irradiated onto the scales (grating portions) formed on the reflection plates 25A and 25B. Specifically, as shown in fig. 5, an X scale SX having a longitudinal direction in the Y-axis direction is formed on the reflecting surface of the reflector 25B on the approximately-X side of the center in the X-axis direction₁. X scale SX₁The diffraction grating is composed of diffraction gratings in which grating lines whose longitudinal direction is the Y-axis direction are arranged at a predetermined pitch (for example, 1 μm) in the X-axis direction.

An X scale SX on the reflection surface of the reflection plate 25B₁Is adjacently formed with a Y scale SY₁. Y scale SY₁The display device includes a pair of sub-regions (extension regions) each including a main region having an elongated rectangular shape whose longitudinal direction is the Y-axis direction and a rectangular region extending in the + X direction from both ends on the ± Y sides of the main region. Y scale SY₁The diffraction grating is composed of diffraction gratings in which grating lines whose longitudinal direction is the X-axis direction are arranged at a predetermined pitch (for example, 1 μm) in the Y-axis direction.

On the reflecting surface of the reflecting plate 25A, and an X scale SX₁Y-scale SY₁An X scale SX is formed in a bilaterally symmetrical arrangement₂Y-scale SY₂. X scale SX₂Y-scale SY₂Is composed of a scale SX₁Y-scale SY₁A diffraction grating of the same configuration.

In the present embodiment, the X head EX having the X-axis direction as the measurement direction₁、EX₂Respectively aiming at X scale SX₁、SX₂The measuring beam is irradiated and the reflected light thereof is received, whereby the relative displacement of the X-reading head itself in the X-axis direction with respect to the X-scale on which the measuring beam is irradiated is detected.

Similarly, a Y head EY having a Y-axis direction as a measurement direction is provided for a Y scale SY₁、SY₂The measurement beam is irradiated and the reflected light thereof is received, whereby the relative displacement of the Y head itself in the Y-axis direction with respect to the Y scale on which the measurement beam is irradiated is detected.

In the present embodiment, as shown in fig. 5, when wafer stage WST1 is located at the-X-side end and the + Y-side end of the movement path from movement area AE during exposure to the 1 st loading position and alignment area AA via 1 st waiting area AW1, X head EX mounted on wafer stage WST1 is located at the + Y-side end₁、EX₂And X scale SX₁Opposed and Y head EY and Y scale SY₁And (4) oppositely. Here, measurement information of the relative displacement between the head and the corresponding scale for each measurement direction is sent from each head facing the corresponding scale to the main controller 20. Main controller 20 calculates the position of wafer stage WST1 in the XY plane (the position in the X-axis direction, the Y-axis direction, and the θ z direction) based on the measurement information of each head.

Here, the 1 st loading position is a position at which a wafer is replaced on wafer stage WST1, and in the present embodiment, is arranged in 1 st waiting area AW1 and is determined as a position of wafer stage WST1 when fiducial mark plate FM1 is positioned directly below alignment system ALG.

When wafer stage WST1 moves from the state shown in fig. 5 in the + X direction, X head EX₁、EX₂Separate X scale SX₁. In this case, the main controller 20 measures using the Y head EY, the XZ interferometer 116 (or the XZ interferometers 116, 126) and the Y interferometer 16Position of wafer stage WST 1. When wafer stage WST1 further moves in the + X direction by a predetermined distance, Y head EY also moves away from Y scale SY₁. In this case, main controller 20 measures the position of wafer stage WST1 using interferometer system 118, specifically, using Y interferometer 16 and XZ interferometer 116 (or Y interferometer 16 and XZ interferometers 116 and 126).

When wafer stage WST2 is located at the position on the + X-side end and the + Y-side end of the movement path from movement area AE during exposure to the 2 nd loading position and alignment area AA via 2 nd waiting area AW2, X head EX mounted on wafer stage WST2 is located at position on the + X-side end and the + Y-side end of the movement path₁、EX₂And X scale SX₂Y reading head EY and Y scale SY₂And (4) oppositely. Main controller 20 calculates the position of wafer stage WST2 in the XY plane in the moving plane from the measurement results of these 3 heads. When the head is detached from the corresponding scale, the position measurement is switched to the position measurement using the interferometer system 118, as described above.

Here, the 2 nd loading position is a position at which a wafer is replaced on wafer stage WST2, and in the present embodiment, is arranged in 2 nd waiting area AW2 and is determined as a position of wafer stage WST2 when fiducial mark plate FM2 is positioned directly below alignment system ALG.

By using a scale SX as shown in figure 5₁、SY₁And head EX mounted on wafer stage WST1₁、EX₂And EY, when wafer stage WST1 moves from movement area AE during exposure to loading position and alignment area AA via waiting area AW 11, or vice versa, the position measurement using only encoder system 150 can be performed on the movement path of wafer stage WST1, at least on a straight path extending in the Y-axis direction. Also, by using a scale SX₂、SY₂Arrangement of (2) and head EX mounted on wafer stage WST2₁、EX₂EY is arranged on the moving path of stage WST2 when wafer stage WST2 moves from moving area AE to loading position 2 and alignment area AA via waiting area AW2 during exposure or vice versaIn this case, at least in a straight path extending in the Y-axis direction, position measurement using only the encoder system 150 can be performed. In this way, it is not necessary to perform the switching process of XZ interferometers 116 and 117, the switching process of XZ interferometers 126 and 127, and the resetting (resetting of the origin) of the interferometers used after the switching, which are necessary when the interferometer system 118 is used to measure the positions of wafer stages WST1 and WST2 moving along the linear path described above. Therefore, the throughput can be improved compared to the case of using the interferometer system 118.

Fig. 7 shows a main configuration of a control system of the exposure apparatus 100. This control system is mainly composed of a main control device 20 composed of a microcomputer (or a workstation) as the whole control device.

Next, a parallel processing operation using 2 wafer stages WST1 and WST2 will be described with reference to fig. 8 to 12 and 5. In the following operation, the main controller 20 controls the liquid supply device 5 and the liquid recovery device 6 as described above, and keeps a certain amount of liquid Lq in the space directly below the front end lens 191 of the projection optical system PL, so as to form the liquid immersion area 14 as needed.

Fig. 8 shows a state in which region AE is moved during exposure, step-and-scan exposure is performed on wafer W1 mounted on wafer stage WST1, and wafer exchange is performed between the wafer transfer mechanism (not shown) and wafer stage WST2 at the 2 nd mounting position in 2 nd waiting region AW 2.

While wafer stage WST2 is stopped at the 2 nd loading position during and after the wafer replacement, main controller 20 resets Y interferometer 19 and XZ interferometers 117 and 127 (resets the origin) before starting wafer alignment (and other pre-processing measurements) with respect to new wafer W2.

After the wafer replacement (loading of a new wafer W2) and the resetting of the interferometers 19, 117, 127 are completed, the main control device 20 detects the 2 nd fiducial marks on the fiducial mark plate FM2 using the alignment system ALG. Next, the main control device 20 detects the 2 nd reference mark with reference to the pointer center of the alignment system ALGThe position is recorded, and the 2 nd reference mark is calculated from the detection result and the result of the position measurement of wafer stage WST2 by interferometers 19, 117, 127 at the time of detection, about reference axis LA and reference axis LV₀Position coordinates in an orthogonal coordinate system (alignment coordinate system) which is a coordinate axis.

Next, main controller 20 moves wafer stage WST2 to alignment area AA as shown in fig. 9. Main controller 20 performs Enhanced Global Alignment (EGA) while measuring the position coordinates of wafer stage WST2 in alignment area AA (alignment coordinate system) using interferometers 19, 117, and 127. Specifically, main controller 20 detects a plurality of alignment marks provided in a plurality of specified irradiation regions (sample irradiation regions) on wafer W2 using alignment system ALG while controlling the position coordinates of wafer stage WST2 using interferometers 19, 117, and 127, and obtains the position coordinates thereof. The position coordinates of the plurality of irradiation regions in the coordinate system are calculated by performing a statistical calculation disclosed in, for example, U.S. Pat. No. 4,780,617 specification on the basis of the obtained position coordinates and the design position coordinates. The position coordinates of the 2 nd reference mark detected before are subtracted from the calculated position coordinates to obtain the position coordinates of the plurality of irradiation regions on the wafer W2 with the position of the 2 nd reference mark as the origin.

Typically, the wafer exchange and wafer alignment sequence ends before the exposure sequence. Therefore, when the wafer alignment is finished, main control apparatus 20 moves wafer stage WST2 to the predetermined waiting position on the aforementioned straight path extending in the Y-axis direction within waiting-number-2 area AW 2. At this time, main controller 20 temporarily returns wafer stage WST2 to the 2 nd loading position. Thus, Y head EY and Y scale SY mounted on wafer stage WST2₂(refer to fig. 8) opposite. A main controller 20 having a Y head EY and a Y scale SY₂At a relative time point, the measurement of the Y position of wafer stage WST2 is switched from the measurement using Y interferometer 19 to the measurement using Y head EY. Next, main controller 20 drives wafer stage WST2 in the + X direction. Thus, X read head EX₁、EX₂And XScale SX₂And (4) oppositely. Main controller 20, at X head EX₁、EX₂And X scale SX₂At a relative time, the measurement of the X position and θ z position of wafer stage WST2 is switched from the measurement using interferometer system 118 to the measurement using X head EX₁、EX₂The measurement of (2). Next, main controller 20 waits wafer stage WST2 at the predetermined waiting position until exposure of wafer W1 on wafer stage WST1 is completed.

When exposure of wafer W1 on wafer table WTB1 is completed, main controller 20 starts driving wafer stages WST1 and WST2 to predetermined positions (right side parallel positions) in parallel state movement area AS shown in fig. 11. When the movement of wafer stage WST1 to the right parallel position is started, main controller 20 switches the Y interferometer used for the position measurement of wafer stage WST1 from Y interferometer 17 to Y interferometer 16. At this time, main controller 20 uses encoder head EX as shown in FIG. 10₁、EX₂EY measures the position of wafer stage WST2, and based on the measurement result, it is moved along head EX₁、EX₂EY and corresponding scale SX₂、SY₂The path (linear path) defined by the arrangement of (3) moves wafer stage WST 2.

At this time, wafer stage WST2 moving toward the right parallel position blocks 3 measuring beams that were originally irradiated onto XZ interferometer 126 of wafer stage WST1, and the position measurement of wafer stage WST1 using XZ interferometer 126 becomes impossible. Therefore, main control apparatus 20 measures the X, Z, θ y position of wafer table WTB1 using only XZ interferometer 116. Here, the main control device 20 uses the aforementioned alternative method for measuring the θ y position and the Z position.

When wafer stage WST2 reaches the right side parallel position shown in fig. 11, main controller 20 measures the X position and θ z position of wafer stage WST2, and uses head EX₁、EX₂The measurement of (2) is switched to the measurement using the XZ interferometer 126 and the Y interferometer 18. At this time, the main controller 20 is based on the head EX₁、EX₂EY, presetting XZ interferometer 126 and Y interferometer 18 (however, the measurement with Y read head EY continues). Further, as is clear from fig. 11, in a state where wafer stage WST2 has moved to the right side parallel position, since 3 measuring beams of XZ interferometer 116 are blocked by wafer stage WST1, main control apparatus 20 measures the X, Z and θ y positions of wafer table WTB2 using only XZ interferometer 126. Here, the main controller 20 also adopts the aforementioned alternative method for measuring the θ y position and the Z position.

In a state where both wafer stages WST1 and WST2 are moved to the right side parallel position in parallel state movement area AS, AS shown in fig. 11, eaves 23a of wafer stage WST1 engage with eaves 23b of wafer stage WST2, and a parallel state is established in which both wafer stages WST1 and WST2 approach or contact via eaves 23a and 23 b. At this time, as shown in fig. 11, Y head EY and Y scale SY mounted on wafer stage WST1₁And (4) oppositely. Therefore, main controller 20 switches the measurement instrument for measuring the Y position of wafer stage WST1 from interferometer 16 to Y head EY. Next, main control apparatus 20 drives both wafer stages WST1 and WST2 in the-X direction while maintaining the parallel state. At this time, the position X, Y of wafer stage WST1 is measured using Y head EY and XZ interferometer 116 mounted on wafer stage WST1 (however, Y interferometer 16 is used for measuring the θ z position), and the position X, Y of wafer stage WST2 is measured using Y head EY and XZ interferometer 126 mounted on wafer stage WST2 (however, Y interferometer 18 is used for measuring the θ z position), and both wafer stages WST1 and WST2 are driven based on these measurement results. At this time, Y positions of wafer stages WST1 and WST2 may be measured using Y interferometers 16 and 18, respectively.

AS wafer stages WST1 and WST2 move in the-X direction while maintaining the parallel state in parallel state movement area AS, liquid immersion area 14 formed between front end lens 191 and wafer table WTB1 moves onto wafer table WTB1, eaves 23a, eaves 23b, and wafer table WTB2 in this order. Fig. 5 shows a state immediately after liquid immersion area 14 has moved from above wafer table WTB1 to above wafer table WTB2 across eave 23 a.

When the movement of liquid immersion area 14 onto wafer table WTB2 is completed, encoder head EX mounted on wafer stage WST1₁、EX₂EY and corresponding scale SX respectively₁、SY₁And (4) oppositely. Therefore, main controller 20 switches measurement of the position of wafer stage WST1 in the XY plane from measurement using XZ interferometer 116 and Y head EY to measurement using X head EX₁、EX₂And measurement of the Y read head EY. Subsequently, main controller 20 causes wafer stage WST1 to move along with 3 heads EX₁、EX₂EY and corresponding scale SX₁、SY₁The route in the 1 st waiting area AW1 defined by the arrangement of (2) is moved to the 1 st loading position shown in fig. 12. When wafer stage WST1 reaches the 1 st loading position, main controller 20 switches to the position measurement of wafer stage WST1 using Y interferometer 19 and XZ interferometers 117 and 127.

In parallel with the movement of wafer stage WST1 described above, main control apparatus 20 drives wafer stage WST2 to position fiducial mark plate FM2 directly below projection optical system PL. Before that, main controller 20 switches the measurement of the position of wafer stage WST2 using Y head EY mounted on wafer stage WST2 and XZ interferometer 126 within the XY plane to the measurement of the position of wafer stage WST2 using Y interferometer 17 and XZ interferometers 116 and 126 within the XY plane. And a pair of 1 st fiducial marks on fiducial mark plate FM2 are detected using reticle alignment detection system 13 (see fig. 7) to detect the relative positions of the shadowed images on the wafer plane of the reticle alignment marks on reticle R corresponding to the 1 st fiducial marks. This detection is performed through the projection optical system PL and the liquid Lq forming the liquid immersion area 14.

The main controller 20 calculates the relative positional relationship between the projection position of the pattern of the reticle R (the projection center of the projection optical system PL) and each irradiation area on the wafer W2, based on the relative positional information detected here and the positional information of each irradiation area on the wafer W2 previously obtained with the reference mark 2 nd. Based on the calculation results, main controller 20 transfers the pattern of reticle R to each shot region on wafer W2 by step-and-scan method while controlling the position of wafer stage WST2, as in the case of wafer W1 described above. Fig. 12 shows a case where the pattern of the reticle R is transferred to each shot region on the wafer W2 in this manner.

In parallel with the exposure operation for wafer W2 on wafer stage WST2, main controller 20 performs wafer exchange between a wafer transfer mechanism (not shown) and wafer stage WST1 at the 1 st loading position, and loads new wafer W1 onto wafer table WTB 1. Next, main controller 20 detects the 2 nd fiducial mark on fiducial mark plate FM1 using alignment system ALG. Before detecting the 2 nd reference mark, main controller 20 resets Y interferometer 19 and XZ interferometers 117 and 127 (resets the origin) with wafer stage WST1 positioned at the 1 st loading position. Thereafter, main controller 20 performs wafer alignment (EGA) using alignment system ALG on wafer W1 in the same manner as described above, while controlling the position of wafer stage WST 1.

When wafer alignment (EGA) with respect to wafer W1 on wafer table WTB1 is completed and exposure to wafer W2 on wafer table WTB2 is also completed, main controller 20 drives wafer stages WST1 and WST2 to the left side parallel position in parallel state movement area AS. The left side parallel position is a position where wafer stages WST1 and WST2 are aligned on the right side as viewed in FIG. 11, with respect to reference axis LV₀In left-right symmetrical positions. The position measurement of wafer stage WST1 in the left side parallel position drive is performed in the same procedure as the position measurement of wafer stage WST2 described above.

At this left side parallel position, lip 23a of wafer stage WST1 and lip 23b of wafer stage WST2 are also engaged, and both wafer stages WST1 and WST2 are in a parallel state. While maintaining this parallel state, main controller 20 drives both wafer stages WST1 and WST2 in the + X direction, which is opposite to the previous drive. As a result of this driving, liquid immersion area 14 formed between front end lens 191 and wafer table WTB2 moves from wafer table WTB2, eaves 23b, eaves 23a, and onto wafer table WTB1 in this order, in reverse to the previous order. Of course, when moving in the parallel state, the position of both wafer stages WST1 and WST2 is measured in the same manner as before. When the movement of liquid immersion area 14 is completed, main controller 20 starts exposure of wafer W1 on wafer stage WST1 in the same manner as described above. In parallel with this exposure operation, main control apparatus 20 drives wafer stage WST2 to the 2 nd loading position via 2 nd waiting area AW2 in the same manner as described above, and performs wafer alignment on new wafer W2 by replacing exposed wafer W2 on wafer stage WST2 with new wafer W2.

Thereafter, main controller 20 repeats the parallel processing operation using wafer stage WST1 and WST 2.

As can be seen from the above description, the X scale SX is used₁Opposed pair of X read heads EX₁、EX₂A pair of X encoders and a Y scale SY₁A Y encoder composed of opposing Y heads EY constitutes a 1 st encoder system, and this 1 st encoder system measures positional information of wafer stage WST1 in the XY plane when wafer stage WST1 moves along a path in the X-axis direction at the time of state transition between the 1 st state in which wafer W1 is positioned at the exposure position where liquid immersion area 14 is formed and the 2 nd state in which wafer W1 is retracted from the exposure position, that is, when wafer stage WST1 moves along a movement path between exposure movement area AE and the area near the 1 st loading position, including a movement path in parallel state movement area AS and a movement path in 1 st waiting area AW 1. And an X scale SX₂Opposed pair of X read heads EX₁、EX₂A pair of X encoders and a Y scale SY₂A 2 nd encoder system is constituted by a Y encoder constituted by opposing Y heads EY, and this 2 nd encoder system measures that wafer stage WST2 moves on an XY stage 2 when wafer stage WST2 moves along a path in the X-axis direction at the time of a state transition between the 1 st state in which wafer W2 is positioned at the exposure position where liquid immersion area 14 is formed and the 2 nd state in which wafer W1 is retracted from the exposure position, that is, when wafer stage WST2 moves along a movement path between exposure movement area AE and the area near the 2 nd loading position, including a movement path in parallel state movement area AS and a movement path in 2 nd waiting area AW2Position information within a plane. The encoder system 150 includes a 1 st encoder system and a 2 nd encoder system.

As described above, according to the exposure apparatus 100 of the present embodiment, the X scale SX is used₁Opposed pair of X read heads EX₁、EX₂A pair of X encoders and a Y scale SY₁The Y encoder configured by the opposing Y head EY measures positional information (including rotation information in the θ z direction) in the XY plane when wafer stage WST1 moves along a movement path in 1 st waiting area AW1 between movement area AE at the time of exposure and the area near the 1 st loading position, specifically, along a movement path substantially parallel to the Y axis. Similarly, by means of an X scale SX₂Opposed pair of X read heads EX₁、EX₂A pair of X encoders and a Y scale SY₂The Y encoder configured by the opposing Y head EY measures positional information (including rotation information in the θ z direction) in the XY plane when wafer stage WST2 moves along a movement path in waiting area AW2 between movement area AE during exposure and the area near the 2 nd loading position, specifically, along a movement path substantially parallel to the Y axis. Therefore, exposure apparatus 100 can measure the positions of wafer stages WST1 and WST2 by encoder system 150 in an area where it is difficult to measure the positions of wafer stages WST1 and WST2 by interferometer system 118, and can measure positional information of wafer stages WST1 and WST2 in the XY plane at any time by measurement system 200 including interferometer system 118 and encoder system 150. Further, in the movement of wafer stages WST1 and WST2 along the above-described movement paths, the switching process between XZ interferometers 116 and 117 and between 126 and 126 is not necessary. Therefore, time waste caused by the switching process of the interferometer can be avoided, and high throughput can be maintained.

Further, according to exposure apparatus 100 of the present embodiment, it is only necessary to move head EX corresponding to the movement path of wafer stage WST1 on the reflection surface of reflection plate 25A parallel to the XY plane₁、EX₂And EY is respectively provided with an X scale SX₁And Y scale SY₁I.e. while controlling the exposure along the edgeThe position of wafer stage WST1 in the XY plane when moving on the movement path in 1 st waiting area AW1 between movement area AE and the area near the 1 st loading position. Similarly, it is only necessary to move head EX corresponding to the movement path of wafer stage WST2 on the reflection surface of reflection plate 25B parallel to the XY plane₁、EX₂And EY is respectively provided with an X scale SX₂And Y scale SY₂That is, the position of wafer stage WST2 in the XY plane when moving along the movement path in waiting area AW2 between movement area AE during exposure and the area near the 2 nd loading position can be controlled. Therefore, the exposure apparatus 100 can reduce the cost as compared with a case where a grating is provided over the entire surface of the region between the exposure position and the 1 st and 2 nd loading positions (that is, substantially over the entire surfaces of the reflection plates 25A and 25B).

Further, when the state transition is performed between the 1 st state in which wafer W1 is positioned at the exposure position where liquid immersion area 14 is formed and the 2 nd state in which wafer W1 is retracted from the exposure position, the movement path of wafer stage WST1 in the X-axis direction, that is, the movement path of wafer stage WST1 and wafer stage WST2 in the parallel state in parallel state movement area AS, is used with corresponding Y scale SY₁Y head EY mounted on opposing wafer stage WST1 measures the Y position of wafer stage WST1 by main controller 20. Similarly, when the state transition is made between the 1 st state in which wafer W2 is positioned at the exposure position where liquid immersion area 14 is formed and the 2 nd state in which wafer W2 is retracted from the exposure position, the movement path of wafer stage WST2 in the X-axis direction, that is, the movement path of wafer stage WST2 and wafer stage WST1 in the parallel state in parallel state movement area AS, is used using Y scale SY corresponding to the movement path of wafer stage WST 3526 in the parallel state₂Y head EY mounted on opposing wafer stage WST2 measures the Y position of wafer stage WST2 by main controller 20. Therefore, compared to the case where the positions of wafer stages WST1, WST2 in the Y-axis direction when moving in the parallel state in parallel state moving area AS are measured using the interferometer system, highly accurate measurement can be performed.

Further, according to exposure apparatus 100, in a state where liquid immersion area 14 is formed in the space between projection optical system PL (projection unit PU) and the wafer stage (or the wafer mounted on the wafer stage) therebelow, the transition from the 1 st state to the 2 nd state or, conversely, the transition from the 2 nd state to the 1 st state can be made without leaking the liquid from the gap between both wafer stages WST1 and WST 2. Accordingly, the reflection surfaces of the mirrors 27e and 27f provided on the surfaces opposite to each other in the parallel state are not wetted with the liquid, and high stability of the wafer stage position measurement using the reflection surfaces of the mirrors 27e and 27f by the XZ interferometers 116, 117, 126, and 127 can be secured.

Further, after one wafer stage performs wafer exposure via the projection optical system PL and the liquid Lq in the liquid immersion area 14, it is not necessary to perform the entire recovery of the liquid Lq forming the liquid immersion area 14 and the resupply step until the wafer exposure via the projection optical system PL and the liquid Lq in the liquid immersion area 14 is started at the other wafer stage. Therefore, the time from the end of exposure on one wafer stage to the start of exposure on the other wafer stage can be shortened to the same extent as in a non-immersion type exposure apparatus, and throughput can be improved. Further, since liquid is always present on the image plane side of the projection optical system PL, it is possible to effectively prevent water stains (water marks) from being generated on an optical member (for example, the front end lens 191) on the image plane side of the projection optical system PL, and to maintain the imaging performance of the projection optical system PL well for a long period of time.

Further, by the parallel operation of the 2 wafer stages WST1 and WST2, throughput can be improved as compared with a conventional exposure apparatus having a single wafer stage in which wafer exchange, wafer alignment, and exposure operations are sequentially performed using only 1 wafer stage.

Further, by performing exposure with high resolution and a focal depth larger than that in air by immersion exposure, the pattern of the reticle R can be transferred onto the wafer with good accuracy.

In the above-described embodiment, X scale SX is mounted on each of wafer stages WST1 and WST2₁Opposed pair of X read heads EX₁、EX₂And Y scale SY₁The opposing Y heads are not limited to this, and a pair of Y heads and 1X head may be mounted on wafer stages WST1 and WST 2. The total number of the Y heads and the X heads on each wafer stage may be at least 3. The reason for this is that, at this time, in addition to the positional information of each wafer stage in the X-axis direction and the Y-axis direction, the rotation information in the θ z direction can be measured. However, if the object is to measure only the position information of each wafer stage in the X-axis direction and the Y-axis direction, X scale SX is mounted on wafer stages WST1 and WST2₁1X read head and Y scale SY opposite₁The 1Y head opposed thereto is sufficient.

In the above-described embodiment, as shown in fig. 13(a) and 13(B), X head EX may be provided on wafer stage WST1₁Near-arranged Y head EY₁、EY₂. In this case, the Y head EY₁The Y head EY is arranged at the same position as the Y head EY₂Then with the Y read head EY₁Adjacent on the + Y side, i.e. Y read head EY₁、EY₂So as to simultaneously cooperate with Y scale SY₁Are arranged in a relative positional relationship with the sub-region (extended region). The modification shown in fig. 13 a and 13B (hereinafter referred to as modification 1 for convenience) has the following advantages.

I.e. to reduce, for example, the Y scale SY₁The manufacturing cost of (3) is that the main region and the pair of sub regions are separately manufactured and arranged to manufacture the Y scale SY₁. In this case, a Y scale SY is used₁Main region (hereinafter, referred to as scale portion SY)₁₁) And a sub region (hereinafter, referred to as a scale portion SY)₁₂) It is very difficult to arrange the divided rasters without errors, i.e., without errors (such as design values) from each other.

Therefore, in this modification 1, the influence of the error is eliminated by the following method.

a. As shown in fig. 13(a), wafer stage WST1 is positioned at Y head EY₁、EY₂Can be connected with the staff part SY₁₂In the opposite position, the main control device 20 respectively captures and marks the SY₁₂Opposing Y read head EY₁、EY₂The measurement information of (2).

b. Then, when wafer stage WST1 moves in the-Y direction to a state shown in FIG. 13(B), pick-up and scale part SY₁₂Opposing Y read head EY₂Measurement information of (2) and scale portion SY₁₁Opposing Y read head EY₁The measurement information of (2).

c. Then, the main controller 20 reads the head EY obtained in a₁、EY₂And the Y head EY obtained in b₂、EY₂To obtain the relation between the measurement information of (2) and the scale part SY₁₂SY with scale part₁₁To correct the Y head EY₁The measurement information of (2). Thus, Y head EY can be used at the Y position of wafer stage WST1 thereafter₁、EY₂At least one of them is measured with good accuracy.

In the staff part SY₁₁SY with scale part₁₂The joining portion of the-Y side end portion of (2) may be subjected to the same treatment as described above. In addition, the scale part SY also needs to be corrected₁₁SY with scale part₁₂In the case of the rotation error of (2), it is only necessary to match the Y head EY₁、EY₂Simultaneously with the scale part SY₁₂1Y heads are further provided in a relative positional relationship, for example, with Y head EY on wafer stage WST1₁Or EY₂The + X side of (2) may be disposed adjacent to each other.

On the other wafer stage WST2 side, 2Y heads may be provided on wafer stage WST2 in a bilaterally symmetrical arrangement as described above, and similar processing may be performed.

In this way, the positions of wafer stages WST1 and WST2 in the Y-axis direction can be controlled with the same degree of accuracy as in the case of using a Y scale in which 3 portions of the main region and the pair of sub regions are formed on one plate.

In the above embodiment, the X scale SX may be replaced with the X scale SX₁、SX₂An X scale SX shown in modification 2 of fig. 14 is used₁’、SX₂'. These X scales SX₁’、SX₂' has a main region of an elongated rectangle whose longitudinal direction is Y-axis direction, and a + Y side end portion of the main region and a Y scale SY₁A pair of sub-regions (extended regions) each including a rectangular region extending in the X-axis direction from the + Y-side end of the substrate. Accordingly, X read head EX₁The position on each wafer stage is changed to the relative Y head EY as shown in FIG. 14₁(this Y head EY₁At the same position as the Y head EY on the wafer stage) to be shifted by a predetermined distance to the + Y side.

In this modification 2, in the movement path of wafer stage WST1 during the transition of the state in which wafer W1 is positioned between the 1 st state at the exposure position where liquid immersion area 14 is formed and the 2 nd state where wafer W1 is retracted from the exposure position, that is, in the entire movement path between exposure movement area AE and the area near the 1 st loading position including the movement path in the parallel state of wafer stage WST2 in parallel state movement area AS and the movement path in 1 st waiting area AW1, the positional information of wafer stage WST1 in the XY plane during the movement along the movement path can be used AS a function of the positional information in the XY plane including the position information in the X plane including X SX₁' opposed X read head EX₁、EX₂2X encoders and Y scale SY₁Opposing Y read head EY₁The 1 st encoder system of the Y encoder is configured to measure with high precision.

Further, according to this modification 2, in the movement path of wafer stage WST2 when the state transition is performed between the 1 st state in which wafer W2 is located at the exposure position where liquid immersion area 14 is formed and the 2 nd state in which wafer W2 is retracted from the exposure position, that is, in the entire movement path between exposure movement area AE and the area near the 2 nd loading position including the movement path in the parallel state of wafer stage WST1 in parallel state movement area AS and the movement path in 2 nd waiting area AW2, the positional information of wafer stage WST2 in the XY plane when moving along the movement path can be obtained, and the positional information in the XY plane can be obtainedTo pass through a combination of X and Y scales SX₂' opposed X read head EX₁、EX₂2X encoders and Y scale SY₂Opposing Y read head EY₁The 2 nd encoder system of the Y encoder is constituted to measure with high accuracy.

Therefore, this modification 2 has an advantage that the Y interferometers 16 and 18 do not need to be provided. However, in this modification 2, the Y interferometers 16 and 18 may be provided. In general, an interferometer is more susceptible to air fluctuation than an encoder, and therefore, although short-term stability of measurement is inferior as compared with the encoder, long-term stability of measurement is superior as compared with the encoder due to temporal change or the like without a scale (grating), and the interferometer and the encoder have different measurement characteristics. Therefore, by using the encoder and the interferometer together, the overall reliability of the measured position information can be improved.

In modification 2 of fig. 14, as shown in fig. 15, X head EX may be used₁X reading head EX₂Y head EY₁The X heads EX are disposed adjacently and in such a manner as to face the corresponding scales simultaneously₃X reading head EX₄Y head EY₂. Thus, the manufacturing cost of each scale can be reduced for the same reason as in the above-described modification 1.

EXAMPLE 2 embodiment

Next, embodiment 2 of the present invention will be described with reference to fig. 16 to 20. The exposure apparatus according to embodiment 2 differs from the encoder system according to embodiment 1, the parallel processing operation of wafer stages WST1 and WST2 associated with position measurement using the encoder system, and the like, and the configuration of the other parts and the like are the same as those of embodiment 1. Therefore, in the following description, the same or equivalent constituent elements are denoted by the same reference numerals and their description will be omitted in order to avoid redundant description. In the following, the description will be made centering on differences.

While the linear encoder having sensitivity in a single axis direction is used as each encoder (head) in the above-described embodiment 1, the exposure apparatus according to the embodiment 2 uses a 2-dimensional encoder (2D encoder) having sensitivity in two axis directions orthogonal to each other, that is, having the two orthogonal axis directions as the measurement directions. As the 2-dimensional encoder, for example, a 3-grating diffraction interference type encoder having two pairs of fixed scales arranged in the orthogonal 2-axis direction, and condensing diffracted lights of the same order in the orthogonal 2-axis direction generated from the 2-dimensional grating on each pair of fixed scales on a common index (index) scale is used.

As shown in fig. 16, in the exposure apparatus according to embodiment 2, at least 2-dimensional encoder heads (2D heads) E are mounted on each of wafer stages WST1 and WST2₁、E₂. On the upper surface of wafer stage WST1, first head E1 is arranged near the-X side end and the-Y side end₁And a 2 nd head E disposed near the center of the X side in the Y axis direction₂. Further, 2D heads E are mounted on the upper surface of wafer stage WST2 in a bilaterally symmetric arrangement (symmetric with respect to the Y axis) with respect to the 2D heads mounted on wafer stage WST1₁、E₂。

As shown in fig. 16, a 2-dimensional scale (2D scale) S having a main region of an elongated rectangular shape whose longitudinal direction is the Y-axis direction, a pair of sub regions (extension regions) extending from both ends of the main region in the Y-axis direction in the + X direction, and a pair of sub regions (extension regions) extending from the main region in the + X direction at positions spaced apart from the pair of sub regions (extension regions) by a predetermined distance in the Y-axis direction is formed on the approximate-X side from the center of the reflection surface of the reflection plate 25B in the X-axis direction₁. Here, the predetermined distance in the Y axis direction means 2D heads E₁、E₂The separation distance in the Y-axis direction. On the other hand, a 2D scale S is formed on the reflection surface of the reflection plate 25A₁Bilateral symmetry 2-dimensional scale (2D scale) S₂。

2D Scale S₁、S₂The diffraction grating is composed of 2-dimensional diffraction gratings arranged at predetermined intervals in the X-axis and Y-axis directions.

In this embodiment, the 2D head E₁、E₂Respectively to 2D scale S₁、S₂Irradiating a measuring beam and receiving the measuring beam from a 2D scale S₁、S₂The 2D head itself detects relative displacement in the X-axis direction and the Y-axis direction with respect to the 2D scale to which the measuring beam is irradiated.

In embodiment 2, as shown in fig. 16, when wafer stage WST1 is located at the-X-side end and the + Y-side end of the movement path from movement area AE during exposure to loading position 1 and alignment area AA via waiting area AW1, 2D head E mounted on wafer stage WST1₁、E₂And 2D scale S₁Is opposite to the main area of the substrate. Here, from the corresponding 2D scale S₁Opposing 2D read head E₁、E₂, 2D read head E₁、E₂Corresponding 2D scale S in the two-axis directions of X axis and Y axis₁Is sent to the main control device 20. The main controller 20 has 2D heads E₁、E₂The position of wafer stage WST1 in the XY plane (the position in the X-axis direction, the Y-axis direction, and the θ z direction) is calculated.

When wafer stage WST1 moves in the + X direction from the state shown in fig. 16, 2D heads E₁、E₂And 2D scale S₁The pair of sub regions (extension regions) on the + Y side of (1) are opposed to each other. Similarly, when wafer stage WST1 is located at the-Y-side end of the movement path, 2D heads E are located at the same X position₁、E₂And 2D scale S₁A pair of sub regions (extension regions) on the-Y side of (b) are opposed to each other. In these cases, the main controller 20 can use two 2D heads E as well as the previous cases₁、E₂The position of wafer stage WST1 in the XY plane is calculated from the measured values of (a).

When wafer stage WST1 is moved from 2D read head E₁、E₂And 2D scale S₁When the pair of sub regions (extension regions) on the + Y side of the substrate face each other and further move in the + X direction by a predetermined distance, the 2D head E₁、E₂Separate 2D scale S₁. Before that, the master controlAn apparatus 20 to which a 2D head E is to be applied₁、E₂The position measurement of wafer stage WST1 of (a) is switched to the position measurement of wafer stage WST1 using interferometer system 118. For example, the position of wafer stage WST1 in the XY plane (the position in the X-axis direction, the Y-axis direction, and the θ z direction) is calculated from the measurement results of Y interferometer 17 and XZ interferometers 116 and 126.

Similarly, when wafer stage WST2 is located at the position on the + X-side end and the + Y-side end of the movement path that moves from movement area AE during exposure to loading position and alignment area AA via 2 nd waiting area AW2, 2D head E mounted on wafer stage WST2₁、E₂And 2D scale S₂Is opposite to the main area of the substrate. Master control device 20 head E according to 2D₁、E₂The position of wafer stage WST2 in the XY plane is calculated from the measured values of (a). In addition, in the 2D head E₁、E₂And 2D scale S₂The same applies to the case of the opposite extension region. In addition, in the 2D read head E₁、E₂Separate 2D scale S₂In this case, as in the case of wafer stage WST1 described above, the position measurement is switched to the position measurement of wafer stage WST2 using interferometer system 118.

By means of a 2D scale S as shown in FIG. 16₁And 2D head E mounted on wafer stage WST1₁、E₂With the arrangement of (3), it is possible to perform stage position measurement using only the 2D encoder over the entire area of the movement path of wafer stage WST1 when wafer stage WST1 is moved from movement area AE during exposure to the 1 st loading position via 1 st waiting area AW1, or vice versa. Also, by means of a 2D scale S₂And 2D head E mounted on wafer stage WST2₁、E₂With the arrangement of (3), it is possible to perform stage position measurement using only the 2D encoder over the entire area of the movement path of wafer stage WST2 when wafer stage WST2 is moved from movement area AE during exposure to the 2 nd loading position via 2 nd waiting area AW2, or vice versa. In this way, when the interferometer system 118 is used to measure the positions of the wafer stages WST1 and WST2 moving along the linear path, it is not necessary to measure the positions of the wafer stages WST1 and WST2Necessary processes for switching the XZ interferometers 116 and 117, processes for switching the XZ interferometers 126 and 127, and resetting the interferometers used after the switching (resetting of the origin). Therefore, the throughput can be improved compared to the case of using the interferometer system 118. For the above reasons, the Y interferometers 16 and 18 are not required in embodiment 2.

Next, a parallel processing operation using 2 wafer stages WST1 and WST2 will be described with reference to fig. 16 to 20. In the following operation, the liquid immersion area 14 is always formed as in the above embodiment 1.

Fig. 17 shows a state in which step-and-scan exposure of wafer W1 mounted on wafer stage WST1 is performed in movement area AE during exposure, and simultaneously enhanced full wafer alignment (EGA) of wafer W2 mounted on wafer stage WST2 is performed in alignment area AA. At this time, main controller 20 measures the position of wafer stage WST1 using Y interferometer 17 and XZ interferometers 116 and 126, and measures the position of wafer stage WST2 using Y interferometer 19 and XZ interferometers 117 and 127.

When wafer alignment (EGA) of wafer W2 is completed, main controller 20 moves wafer stage WST2 to 2D scale S in waiting area AW2 No. 2₂A predetermined waiting position on a linear path extending in the Y-axis direction defined by the main area of (a). At this time, main controller 20 temporarily returns wafer stage WST2 to the 2 nd loading position. Thus, 2D head E mounted on wafer stage WST2₁、E₂And 2D scale S₂Is opposite to the pair of extension regions. Next, the main controller 20 sets the 2D head E to the first position₁、E₂And 2D scale S₂At a relative time, the measurement of the position of wafer stage WST2 in the XY plane using interferometers 19, 117, and 127 is switched to use of 2D encoder E₁、E₂The position of wafer stage WST2 in the XY plane. Further, main controller 20 waits wafer stage WST2 at the predetermined waiting position before the exposure of wafer W1 on wafer stage WST1 is completed.

When aligning the waferWhen exposure of wafer W1 on table WTB1 is completed, main controller 20 drives wafer stages WST1 and WST2 to predetermined positions (right side parallel positions) in parallel state moving area AS shown in fig. 19. At this time, the main controller 20 uses the 2D head E as shown in fig. 18₁、E₂The position of wafer stage WST2 is measured, and wafer stage WST2 is moved along by 2D head E based on the measurement result₁、E₂And 2D scale S₂The path (straight path) in the 2 nd waiting area AW2 defined by the arrangement of (1) moves.

When wafer stage WST1 reaches the right parallel position in parallel movement area AS, AS shown in fig. 19, 2D head E mounted on wafer stage WST1 is used₁、E₂And 2D scale S₁Is opposed to each other, main controller 20 switches from the measurement of the position of wafer stage WST1 using interferometers 17, 116, 126 to the use of 2D head E₁、E₂The position of (2).

In a state where both wafer stages WST1 and WST2 are moved to the right side parallel position in parallel state movement area AS, AS shown in fig. 19, eaves 23a of wafer stage WST1 engage eaves 23b of wafer stage WST2, and the two stages approach or contact each other via eaves 23a and 23b of both wafer stages WST1 and WST 2. Next, main control apparatus 20 drives both wafer stages WST1 and WST2 in the-X direction while maintaining the parallel state. At this time, main control device 20 uses 2D encoder E mounted on wafer stages WST1 and WST2, respectively₁、E₂The position measurement is performed, and the two stages WST1 and WST2 are driven based on the measurement result.

AS both wafer stages WST1 and WST2 move in the-X direction while being held in the parallel state in parallel state movement area AS, liquid immersion area 14 originally formed between tip lens 191 and wafer table WTB1 moves in order from wafer table WTB1 to eaves 23a, eaves 23b, and wafer table WTB 2. Fig. 16 shows a state immediately after the liquid immersion area 14 has passed over the eaves 23a and moved from above the wafer table WTB1 to above the wafer table WTB 2.

When the movement of liquid immersion area 14 onto wafer table WTB2 is completed, main control apparatus 20 moves wafer stage WST1 to the 1 st loading position shown in fig. 20 via 1 st waiting area AW 1. The position of wafer stage WST1 in this movement uses 2D read head E₁、E₂And measured. When stage WST1 reaches the 1 st loading position, main controller 20 uses 2D head E₁、E₂The position measurement of wafer stage WST1 in (1) is switched to the position measurement of stage WST1 using Y interferometer 19 and XZ interferometers 117 and 127.

In parallel with the movement of wafer stage WST1 described above, main controller 20 moves wafer stage WST2 to movement area AE during exposure, and positions fiducial mark plate FM2 directly below projection optical system PL. Before that, the main controller 20 uses the 2D head E₁、E₂The measurement of the position of wafer stage WST2 in the XY plane is switched to the measurement of the position of wafer stage WST2 in the XY plane using interferometers 17, 116, 126. Then, in the same procedure as described above, reticle alignment (detection of a pair of 1 st fiducial marks on fiducial mark plate FM 2) and exposure of wafer W2 using the step-and-scan method are started.

In parallel with the exposure operation for wafer W2 on wafer stage WST2, main controller 20 performs wafer exchange between a wafer transfer mechanism (not shown) and wafer stage WST1 at the 1 st loading position, and loads new wafer W1 on wafer table WTB 1. Next, fiducial mark 2 on fiducial mark plate FM1 is detected using alignment system ALG. Then, main controller 20 moves wafer stage WST1 to alignment area AA, and performs wafer alignment (EGA) using alignment system ALG similar to that described above with respect to wafer W1 while controlling the position of wafer stage WST 1.

When wafer alignment (EGA) with respect to wafer W1 on wafer table WTB1 is completed and exposure to wafer W2 on wafer table WTB2 is also completed, main controller 20 drives wafer stages WST1 and WST2 to the left side parallel position in parallel state movement area AS along a path opposite to the previous movement path. When both wafer stages WST1 and WST2 move to the left side parallel position, main control apparatus 20 drives both stages WST1 and WST2 in the + X direction opposite to the previous drive, while maintaining the parallel state. By this driving, liquid immersion area 14 moves from wafer table WTB2 to above eaves 23b, 23a, and wafer table WTB1 in this order. When the movement of liquid immersion area 14 is completed, main controller 20 starts exposure of wafer W1 on wafer stage WST1 in the same manner as described above. In parallel with this exposure operation, main controller 20 drives wafer stage WST2 to the 2 nd loading position via 2 nd waiting area AW2 in the same manner as described above, and replaces exposed wafer W2 on wafer stage WST2 with new wafer W2 to perform wafer alignment on new wafer W2.

Then, main controller 20 repeats the parallel operation of wafer stage WST1 and WST 2.

As described above, the exposure apparatus according to embodiment 2 can obtain the same operational effects as those of the exposure apparatus according to embodiment 1. In addition, according to the exposure apparatus of embodiment 2, in the parallel processing operation of wafer stages WST1 and WST2 using the 2D encoder, main control device 20 measures the positions of both wafer stages WST1 and WST2 moving in the parallel state movement area AS between each parallel position and each loading position and in the path in each waiting area AW1 and AW2 using only the encoder system, and therefore, it is not necessary to provide Y interferometers 16 and 18.

In embodiment 2, wafer stages WST1 and WST2 are mounted on 2D scale S₁、S₂Opposing 2D read heads E₁、E₂Therefore, in addition to the positional information in the X-axis direction and the Y-axis direction of each wafer stage, the rotation information in the θ z direction can be measured. However, if the purpose is to measure the positional information of each wafer stage in the X-axis direction and the Y-axis direction, only 1 2D head may be mounted on wafer stages WST1 and WST 2.

The same as in embodiment 2 aboveIn the case of using a 2D encoder, for example, as in modification 1 shown in fig. 21, 2D encoder head (2D head) E may be mounted on wafer stages WST1 and WST2 so as to be adjacent to the Y-axis direction, for example, in a positional relationship capable of simultaneously facing the 2D scale₁、E₂. In this modification, the main control device can operate in accordance with the 2D head E₁、E₂The positions of wafer stages WST1 and WST2 (the positions in the X-axis direction, Y-axis direction, and θ z direction) in the XY plane are calculated as the measured values of (a). In this modification, the present invention can also be applied to the 2D head E₁、E₂The arrangement of (2) is such that a substantially U-shaped 2D scale S as shown in FIG. 21 is used₁’、S₂To reduce the arrangement area of the scale, thereby reducing the cost. In this modification, the 2D head E may be disposed on wafer stages WST1 and WST2₁、E₂The substrates may be arranged adjacent to each other in the X-axis direction, or may be arranged in other positional relationships. As long as it is a 2D head E₁、E₂Can be simultaneously matched with a 2D scale S₁’、S₂The opposite arrangement is sufficient.

In each of the above embodiments, the interferometer system 118 is used in the movement area AE and the alignment area AA during exposure, and the interferometer system 118 and the encoder system 150 are used in the parallel movement area AS and the 1 st and 2 nd waiting areas AW1 and AW2 to measure the positions of the wafer stages WST1 and WST2, respectively, or only the encoder system 150 is used. In contrast, the position measurement of the two stages WST1, WST2 may be performed using only the encoder system over the entire movement range.

Here, a 2 nd modification of the above-described 2 nd embodiment shown in fig. 22 will be described as an example. In place of the reflection plates 25A and 25B shown in fig. 1 and 5, a rectangular reflection plate 25C is disposed so as to face the entire surface of the moving surface (base plate 12) of wafer stages WST1 and WST 2. However, 2 circular openings for inserting the lens barrel 40 and the lower end portion of the alignment system ALG are formed in the reflection plate 25C. The reflection plate 25C is provided on the lower surface of a main frame that holds the projection unit PU and the like.

On the surface of the reflection plate 25C opposite to the chassis 12At positions above and corresponding to the parallel state moving area AS and the 1 st and 2 nd waiting areas AW1 and AW2, 2D scales S introduced in the above-described embodiment 2 are formed₁、S₂(refer to fig. 16). The same 2D scales SE and SA are formed at positions corresponding to the movement area AE and the alignment area AA during exposure except for the opening through which the lens barrel 40 and the alignment system ALG pass. These 2D scales SE, SA are passed through the 2D scale S₁、S₂And (4) connecting.

2D head E mounted on wafer stage WST1 and WST2₁、E₂For 2D scales S respectively₁SE, SA and S₂The SE and SA irradiate the measuring beam, and receive reflected light (diffracted light) from the 2D scale of the measuring beam, thereby detecting relative displacement of the 2D head itself with respect to the X-axis direction and the Y-axis direction of the 2D scale to which the measuring beam is irradiated. 2D head E mounted on wafer stage WST1 and WST2₁、E₂Is sent to the main control device 20. The main controller 20 has 2D heads E₁、E₂The positions of wafer stages WST1 and WST2 in the XY plane (the positions in the X-axis direction, Y-axis direction, and θ z direction) are calculated.

As described above, by means of the 2D scale S₁、S₂Other than the introduction of the 2D scales SE and SA, the position of wafer stages WST1 and WST2 can be measured using only encoder system 150 at the time of exposure and wafer alignment. Therefore, the parallel processing operation using wafer stages WST1 and WST2 can be performed as in the above embodiments without using an interferometer system. Of course, similarly to the above embodiments, an interferometer system may be provided, and the interferometer system and the encoder system may be used in combination.

As in the 2 modifications of embodiment 1 shown in fig. 13 and 15, wafer stage WST1 and WST2 may be provided with 2D head E as shown in fig. 23₁、E₂Respectively closely arranging 2D read heads E₃、E₄. 2D Scale S₁、S₂SE, SA are respectively made, and for the 2D scale S₁、S₂Then, thenThe 2D scale S is formed by forming the main region and the sub region (extended region) separately and joining these regions to each other on the reflection plate 25C to form an integral body₁、S₂SE, SA. Therefore, as in the 2 modifications described above, the 2D heads E arranged close to each other on wafer stages WST1 and WST2 are used₁、E₃And E₂、E₄In combination, each 2D head straddles the 2D scale S₁、S₂SE, SA, or across a 2D scale S₁、S₂In the case of the joint between the main region and the sub region of (3), the position measurement results of wafer stage WST1 and WST2 can be connected between the 2D heads that are close to each other. FIG. 23 shows 2D read head E on wafer stage WST1₁、E₃And E₂、E₄Cross 2D scales SA, S₁Bonding portion between them, and 2D head E on wafer stage WST2₁、E₃And E₂、E₄Cross 2D scales SE, S₂The instantaneous state of the joint therebetween. In this state, the bonding error is corrected. Accordingly, since the bonding error of the 2D scale is corrected, the position of wafer stages WST1 and WST2 can be measured with high accuracy.

Although the above embodiments have been described in which the conveyance unit that conveys liquid immersion area 14 between wafer stage WST1 and WST2 is constituted by eaves 23a and 23b (or eaves 23c (and step portion 23d)), the conveyance unit may not have the shape of the eaves as long as wafer stage WST1 and wafer stage WST2 are kept facing each other at a predetermined distance (at a distance that prevents wafer stage WST1 from contacting wafer stage WST2 and mirror 27f from contacting mirror 27 e) by engagement with each other, and the liquid immersion area can pass over the upper surface of the conveyance unit.

In the above embodiments, wafer stages WST1 and WST2 are driven independently along the XY plane by the plane motor on the assumption of the movement paths of wafer stages WST1 and WST 2. However, it is not always necessary to use a planar motor, and a linear motor or the like may be used depending on the movement path.

In each of the embodiments and modifications described above, eaves 23a and 23b (or eaves 23c and step 23d) that engage with each other are provided at-Y ends of the + X-side surface of wafer stage WST1 and the-X-side surface of wafer stage WST2, respectively. This is to make the eaves correspond to the movement paths of the two wafer stages WST1 and WST2 in the parallel arrangement shown in fig. 5 and 11, for example. Therefore, when the movement paths of both wafer stages WST1 and WST2 are different in parallel, the installation locations of eave portion 23a and eave portion 23b (or eave portion 23c and step portion 23d) should be set appropriately depending on the movement paths. The conveyance unit such as the lip may be provided at any position as long as it is provided on at least one of the surfaces on the side opposite to the 2 wafer stages, not limited to the-Y end. However, the installation location is preferably a location (above the ineffective area of the reflection surface of the mirrors 27e, 27 f) at which the measurement beam is not substantially prevented from being irradiated onto the reflection surfaces of the mirrors 27e, 27f provided at the wafer stages WST1, WST2, and the positions of the wafer stages WST1, WST2 measured using the position information in the Z-axis direction. The number of the conveyance units such as the eaves is not limited to 1 as long as the conveyance units are provided on at least one of the surfaces on the opposite side of the 2 wafer stages. For example, when a plurality of transfer units are provided, the plurality of transfer units are preferably arranged in parallel (in parallel with the highest efficiency) so that exposure of the next wafer to be exposed can be started with the highest efficiency. In this case, depending on the exposure sequence of the irradiation regions of the wafers W1 and W2, the arrangement of the conveyance unit such as the overhang may be determined so that the exposure of the wafer to be exposed next and the detection of the reference mark on the reference mark plate can be started with optimum efficiency, and the arrangement of the reference mark plate on the wafer stage may be further determined as necessary.

Although the above embodiments and modifications have been described with respect to the case where the projecting portions such as the eave portions are provided on wafer stages WST1 and WST2, the present invention is not limited to this, and the projecting portions may be movable. In this case, for example, the protruding portion may be made substantially horizontal only when both wafer stages WST1 and WST2 are in the parallel state, and may be folded except when they are in the parallel state, that is, when they are not in use.

In the above-described embodiment and modification, the width of the brim in the Y-axis direction is set to be slightly larger than the liquid immersion area, but the present invention is not limited thereto, and the width of the brim in the Y-axis direction may be set to be larger.

Further, although the above embodiments and modifications have been described with respect to the case where the parallel state of 2 wafer stages WST1 and WST2 is maintained during conveyance in the liquid immersion area, the drive in the X-axis direction is possible. In this way, the time required for starting exposure of the next wafer to be exposed held by the wafer stage conveyed to the liquid immersion area after the parallel state can be slightly shortened as compared with the case where the 2 wafer stages WST1 and WST2 are driven only in the X-axis direction while maintaining the parallel state.

In the above description, a case has been described in which a protruding portion such as a ridge is formed on at least one side in the X axis direction of at least one of wafer stage WST1 and WST. However, for example, the above-described modification may be applied to a parallel state involving a positional shift (offset) in the Y axis direction between 2 wafer stages having no projecting portion such as the overhang. In this case, the offset amount in the parallel state can be set to the parallel state that can achieve the above-described optimum efficiency. Alternatively, when a member (hereinafter referred to as a protrusion) protruding from the other part is provided near the end on the + Y side of the + X side of one wafer stage WST1, and a recess capable of accommodating the member therein is formed near the end on the-Y side of the-X side of the other wafer stage WST2, the offset amount in the parallel state can be determined so that the protrusion and the recess can face each other. In this case, the liquid immersion area can be moved back and forth on wafer stages WST1 and WST while preventing the projections from contacting and damaging wafer stage WST 2.

Although the above embodiments have been described with respect to the case where the present invention is applied to the exposure apparatus including wafer stage WST1 and WST2 as the 1 st and 2 nd moving bodies, the present invention is not limited to this, and the present invention can be applied to the exposure apparatus including a wafer stage and a measurement stage having a measurement member (reference mark, sensor, and the like) disclosed in, for example, U.S. patent No. 6,897,963. In this case, the measurement stage is used for predetermined measurements such as uneven illumination measurement, illuminance measurement, aerial image measurement, wavefront aberration measurement, and the like, which receive the illumination light IL through the projection optical system PL and the liquid Lq. Further, the movable body drive system that drives the wafer stage or the like can drive the wafer stage to perform high-precision exposure when exposing the wafer on the wafer stage with illumination light (energy beam) based on at least a part of the measurement result.

In addition, the present invention, which does not include the 1 st and 2 nd moving bodies as a component, can be applied to a stepper, a scanner, or the like having only 1 wafer stage and no measurement stage.

In the above embodiments, it is assumed that the surface on the + X side of wafer stage WST1 and the surface on the-X side of wafer stage WST2 are opposed to each other, and eaves 23a and 23b that engage with each other are provided only on these surfaces. However, not limited to this, when the-X-side end surface of wafer stage WST1 and the + X-side end surface of wafer stage WST2 can be made to face each other, it is needless to say that eaves for engaging with each other are provided on these surfaces, and 2 wafer stages can be brought into proximity or contact with each other via these eaves.

In the above-described embodiments, the case where main controller 20 drives wafer stages WST1 and WST2 in the X-axis direction while maintaining the parallel state in which the wafer stages WST1 and WST2 are partially in contact with or close to each other in the X-axis direction in order to transport liquid immersion area 14 has been described, but the present invention is not limited to this. In order to transport liquid immersion area 14, main control device 20 may be configured to drive stages WST1 and WST2 in the Y-axis direction while maintaining a parallel state in which the stages are partially in contact with or close to each other in the Y-axis direction.

In the above embodiments, the lower surface of the nozzle unit 32 and the lower end surface of the front end optical device of the projection optical system PL are made substantially flush with each other, but the present invention is not limited to this, and for example, the lower surface of the nozzle unit 32 may be arranged closer to the image plane (i.e., wafer) of the projection optical system PL than the emission surface of the front end optical device. That is, the local immersion device 8 is not limited to the above-described structure, and for example, structures described in european patent application publication No. 1420298, U.S. patent application publication No. 2006/0231206, U.S. patent application publication No. 2005/0280791, U.S. patent No. 6,952,253, and the like can be used. Further, for example, as disclosed in U.S. patent application publication No. 2005/0248856, the object surface side optical path of the front end optical device may be filled with a liquid in addition to the image surface side optical path of the front end optical device. Further, a film having lyophilic and/or dissolution preventing function may be formed on a part of the surface (including at least a surface in contact with a liquid) or the entire surface of the front end optical device. Further, although quartz has high affinity with a liquid and does not require a dissolution preventing film, fluorite is preferably formed at least as a dissolution preventing film.

In the above embodiments, pure water (water) is used as the liquid, but the present invention is not limited to this. A safety liquid having a high transmittance of the illumination light IL and stable in chemical properties, such as a fluorine-containing inert liquid, may be used as the liquid. As the fluorine-containing inert liquid, for example, floriant (Fluorinert, trade name of 3M company in usa) can be used. The fluorine-containing inert liquid also has an excellent cooling effect. As the liquid, a liquid having a refractive index higher than that of pure water (refractive index of about 1.44) for the illumination light IL, for example, a liquid having a refractive index of 1.5 or more can be used. Examples of such a liquid include a predetermined liquid having a C-H bond or an O-H bond such as isopropyl alcohol having a refractive index of about 1.50, glycerin (glycerol) having a refractive index of about 1.61, a predetermined liquid (organic solvent) such as ethane, heptane, decane, etc., Decahydronaphthalene (Decahydronaphthalene) having a refractive index of about 1.60, etc. Alternatively, the liquid may be a mixture of two or more of the above liquids, or may be a liquid obtained by adding (mixing) at least one of the above liquids to pure water. Alternatively, H may be added (mixed) to pure water as a liquid⁺、Cs⁺、K⁺、Cl^-、SO₄ ^2-Or PO₄ ^2-And a base, an acid, or the like. Furthermore, the device is provided withThe liquid may be one obtained by adding (mixing) fine particles of Al oxide or the like to pure water. The liquid is capable of transmitting ArF excimer laser light. Further, it is preferable that the liquid has a small absorption coefficient of light and a small temperature dependence, and is stable against a projection optical system (front end optical device) and/or a photosensitive agent (a protective film (top coating film), an antireflection film, or the like) applied to the surface of a wafer. In addition, in F₂When laser is used as the light source, the perfluoropolyether Oil (Fomblin Oil) is selected. Further, as the liquid, a liquid having a refractive index higher than that of pure water for the illumination light IL, for example, a liquid having a refractive index of about 1.6 to 1.8 may be used. In addition, a supercritical fluid may also be used as the liquid. The front end optical device of the projection optical system PL may be formed of a single crystal material of a fluorine compound such as quartz (silicon dioxide), calcium fluoride (fluorite), barium fluoride, strontium fluoride, lithium fluoride, or sodium fluoride. Or a material having a higher refractive index than quartz or fluorite (e.g., 1.6 or more). As the material having a refractive index of 1.6 or more, for example, sapphire, germanium dioxide, or the like can be used as disclosed in the pamphlet of international publication No. 2005/059617, or potassium chloride (having a refractive index of about 1.75) can be used as disclosed in the pamphlet of international publication No. 2005/059618.

In the above embodiment, the recovered liquid may be reused, and in this case, it is preferable that a filter for removing impurities from the recovered liquid be provided in the liquid recovery device, the recovery pipe, or the like.

In addition, although the above embodiments have been described with respect to the case where the present invention is applied to a scanning exposure apparatus such as a step-and-scan type exposure apparatus, the present invention is not limited to this, and the present invention can also be applied to a stationary exposure apparatus such as a stepper. The present invention is also applicable to a step & step type reduction projection exposure apparatus, a proximity type exposure apparatus, a mirror projection aligner (mirror projector) and the like, which combine an irradiation region and an irradiation region.

The projection optical system in the exposure apparatus according to the above-described embodiment may be not only a reduction system but also an equal magnification system or an enlargement system, and the projection optical system PL may be not only a refraction system but also a reflection system or a catadioptric system, and the projection image may be an inverted image or an erect image. The illumination area and the exposure area are rectangular in shape, but the shape is not limited to this, and may be, for example, circular arc, trapezoid, or parallelogram.

The light source of the exposure apparatus according to each of the above embodiments is not limited to the ArF excimer laser light source, and a KrF excimer laser light source (output wavelength 248nm) and F can be used₂Laser (output wavelength 157nm), Ar₂Laser (output wavelength 126nm), Kr₂A pulsed laser light source such as a laser (output wavelength 146nm), or an ultra-high pressure mercury lamp that emits light such as g-line (wavelength 436nm) or i-line (wavelength 365nm) to generate emission light. A harmonic generator of YAG laser or the like may be used. In addition, harmonics such as those disclosed in U.S. patent specification No. 7,023,610, which are obtained as follows, may be used: a single-wavelength laser beam in the infrared region or the visible region emitted from a DFB semiconductor laser or a fiber laser is amplified as vacuum ultraviolet light by an optical fiber amplifier coated with erbium (or both erbium and ytterbium), and converted into ultraviolet light at a wavelength by using a nonlinear optical crystal.

In the above embodiments, although a light transmissive mask (reticle) in which a predetermined light shielding pattern (or phase pattern or light attenuation pattern) is formed on a substrate having light transmissivity is used, an electronic mask disclosed in, for example, U.S. Pat. No. 6,778,257 may be used instead of the reticle, and a light transmissive pattern, a light reflective pattern or a light emitting pattern may be formed on the electronic mask (also referred to as a variable shape mask, an active mask, or an image generator, for example, a DMD (Digital Micromirror Device) or the like which is a type of non-light emitting image display Device (spatial light modulator)) based on electronic data of a pattern to be exposed.

The present invention is also applicable to an exposure apparatus (lithography system) that forms a line-and-space pattern on a wafer by forming interference fringes on the wafer, for example.

Further, the present invention is also applicable to an exposure apparatus in which two reticle patterns are combined via a projection optical system and double exposure is performed on one irradiation region substantially simultaneously by one scanning exposure, as disclosed in, for example, U.S. Pat. No. 6,611,316.

In the above embodiments, the object to be patterned (the object to be exposed to the energy beam) is not limited to a wafer, and may be another object such as a glass plate, a ceramic substrate, a film member, or a mask blank.

The use of the exposure apparatus is not limited to the exposure apparatus for manufacturing a semiconductor device, and the exposure apparatus can be widely applied to, for example, an exposure apparatus for transferring a liquid crystal display device pattern onto a rectangular glass plate, or an exposure apparatus for manufacturing an organic EL, a thin film magnetic head, an imaging device (such as a CCD), a micromachine, a DNA chip, or the like. In addition to exposure apparatuses for manufacturing microdevices such as semiconductor devices, the present invention can be applied to exposure apparatuses for transferring circuit patterns to glass substrates, silicon wafers, and the like in order to manufacture reticles or masks used in light exposure apparatuses, EUV (ultra deep ultraviolet) exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, and the like.

An electronic device such as a semiconductor device is manufactured by a step of designing the function and performance of the device, a step of manufacturing a reticle by a design step, and forming a wafer from a silicon material, a photolithography step of transferring a pattern formed on the reticle (mask) to the wafer by using the exposure apparatus (patterning apparatus) and the exposure method of the above-described embodiments, a development step of developing the wafer after exposure, an etching step of etching and removing an exposed member except for a portion where a resist remains, a resist removal step of removing an unnecessary resist after etching, a device assembly step (including a dicing step, a bonding step, a packaging step), and an inspection step. In this case, since the exposure method is performed using the exposure apparatus of the above embodiment in the photolithography step to form a device pattern on a wafer, a device with high integration can be manufactured with good productivity.

As described above, the exposure apparatus and the exposure method of the present invention are very suitable for exposing an object. The device manufacturing method of the present invention is very suitable for manufacturing electronic devices such as semiconductor devices and liquid crystal display devices.

Claims (73)

1. An exposure apparatus for exposing an object with an energy beam, comprising:

a movable body that holds the object thereon and is movable substantially along a predetermined plane within a region of a predetermined range including 1 st, 2 nd, and 3 rd regions, wherein the 1 st region includes an exposure position at least exposing the loaded object, the 2 nd region is located on the 1 st direction side of the 1 st region at least performing replacement of the object, and the 3 rd region is located between the 1 st and 2 nd regions;

a 1 st grating section disposed at a position corresponding to the 3 rd region on a plane parallel to the predetermined plane, opposite to a surface of the moving body substantially parallel to the predetermined plane; and

a measurement device, comprising: an encoder system having an encoder head provided on a surface of the movable body, and measuring positional information of the movable body in the predetermined plane based on an output of the encoder head facing the 1 st grating section; and an interferometer system for irradiating a measuring beam onto a reflecting surface provided on the movable body and measuring positional information of the movable body at least in the 1 st region and the 2 nd region,

wherein the 3 rd region includes a moving path of the movable body from which the measuring beam exits the reflecting surface.

2. The exposure apparatus according to claim 1, wherein the 1 st grating part is disposed along a movement locus of the encoder head when the movable body moves between the 1 st region and the 2 nd region.

3. The exposure apparatus according to claim 1 or 2, further comprising:

2 nd and 3 rd grating parts respectively arranged at positions corresponding to the 1 st and 2 nd areas on a plane parallel to the predetermined plane;

the measuring device further measures positional information of the movable body in the 1 st and 2 nd regions in the predetermined plane based on outputs of the encoder heads opposed to the 2 nd and 3 rd grating portions, respectively.

4. The exposure apparatus according to claim 3, wherein the measurement device has a plurality of encoder heads provided on a surface of the movable body, and measures positional information of the movable body in the predetermined plane based on outputs of the plurality of encoder heads.

5. The exposure apparatus according to claim 4 wherein the state setting is performed by switching the following states in accordance with the movement of the movable body: a state in which 2 of the plurality of encoder heads simultaneously face 1 of the 1 st, 2 nd, and 3 rd grating portions, and a state in which the 2 encoder heads individually and simultaneously face any 2 of the 1 st, 2 nd, and 3 rd grating portions.

6. The exposure apparatus according to claim 4 or 5, wherein the plurality of encoder heads includes a plurality of 1 st heads which are arranged at different positions on the surface of the movable body with at least one of the 1 st direction and a 2 nd direction perpendicular to the 1 st direction within the predetermined plane as a measurement direction;

the 1 st heads simultaneously face a portion having a grating whose periodic direction is the measurement direction in at least 1 of the 1 st, 2 nd, and 3 rd grating portions.

7. The exposure apparatus according to claim 6, wherein the measurement device measures positional information of a rotational direction of the movable body in the predetermined plane based on outputs of the plurality of 1 st heads.

8. The exposure apparatus according to claim 6 or 7, wherein the measurement device obtains a positional relationship between the 1 st part and the 2 nd part of at least 1 of the 1 st, 2 nd, and 3 rd grating parts based on outputs of the plurality of 1 st heads.

9. The exposure apparatus according to any one of claims 1 to 8, wherein a plurality of the moving bodies are provided.

10. The exposure apparatus according to claim 9, further comprising:

and a moving body driving system that drives 2 moving bodies of the plurality of moving bodies, and drives the 2 moving bodies simultaneously in a predetermined direction within the predetermined plane while maintaining a parallel state in which the 2 moving bodies approach or contact in the predetermined direction when a 1 st state in which one of the 2 moving bodies is located in the 1 st zone is transitioned to a 2 nd state in which the other of the 2 moving bodies is located in the 1 st zone.

11. The exposure apparatus according to claim 10, wherein a 4 th grating section is further disposed at a position where an encoder head provided to at least one of the 2 moving bodies in the parallel state on a surface parallel to the predetermined plane can face;

the measuring device measures positional information of at least one of the 2 moving bodies in the parallel state in the predetermined plane based on an output of the encoder head facing the 4 th grating section.

12. The exposure apparatus according to claim 10 or 11, wherein the predetermined direction is one of the 1 st direction and a 2 nd direction perpendicular to the 1 st direction.

13. The exposure apparatus according to any one of claims 10 to 12, wherein one of the 2 moving bodies moves within a 1 st range, the 1 st range including the 1 st, 2 nd, and 3 rd regions within the predetermined plane;

the other of the 2 moving bodies moves within a 2 nd range, the 2 nd range being different from at least a part of the 1 st range outside the 1 st region.

14. An exposure apparatus for exposing an object with an energy beam, comprising:

a movable body that holds the object thereon and is movable substantially along a predetermined plane within a region of a predetermined range including 1 st, 2 nd, and 3 rd regions, wherein the 1 st region includes an exposure position at least exposing the loaded object, the 2 nd region is located on the 1 st direction side of the 1 st region at least performing replacement of the object, and the 3 rd region is located between the 1 st and 2 nd regions;

1 st, 2 nd and 3 rd grating sections respectively arranged at positions corresponding to the 1 st, 2 nd and 3 rd regions on a plane parallel to the predetermined plane, which faces a surface of the moving body substantially parallel to the predetermined plane; and

the measuring apparatus includes an encoder system having an encoder head provided on a surface of the movable body, and measures positional information of the movable body in the predetermined plane based on an output of the encoder head facing any one of the 1 st, 2 nd, and 3 rd grating portions.

15. The exposure apparatus according to claim 14, wherein the 3 rd grating part is disposed along a movement locus of the encoder head when the movable body moves between the 1 st region and the 2 nd region.

16. The exposure apparatus according to claim 14 or 15, wherein the 1 st grating portion and the 2 nd grating portion are arranged apart from each other.

17. The exposure apparatus according to claim 16, wherein the 1 st grating portion and the 2 nd grating portion are arranged via the 3 rd grating portion.

18. The exposure apparatus according to any one of claims 14 to 17 wherein the measurement apparatus further comprises a measurement beam that irradiates a reflection surface provided on the movable body with a measurement beam to measure at least position information of the movable body in the predetermined plane;

the 3 rd region includes a moving path of the movable body from which the measuring beam exits the reflecting surface.

19. The exposure apparatus according to any one of claims 14 to 18 wherein the measurement device has a plurality of encoder heads provided on a surface of the movable body, and measures positional information of the movable body in the predetermined plane based on outputs of the plurality of encoder heads.

20. The exposure apparatus according to claim 19 wherein the following state is switched to perform the state setting in accordance with the movement of the movable body: a state in which 2 of the plurality of encoder heads simultaneously oppose any 1 of the 1 st, 2 nd, and 3 rd grating portions, and a state in which the 2 encoder heads individually and simultaneously oppose any 2 of the 1 st, 2 nd, and 3 rd grating portions.

21. The exposure apparatus according to claim 19 or 20, wherein the plurality of encoder heads includes a plurality of 1 st heads which are arranged at different positions on the surface of the movable body with at least one of the 1 st direction and a 2 nd direction perpendicular to the 1 st direction within the predetermined plane as a measurement direction;

the 1 st heads simultaneously face a portion having a grating whose periodic direction is the measurement direction in at least 1 of the 1 st, 2 nd, and 3 rd grating portions.

22. The exposure apparatus according to claim 21, wherein the measurement device measures positional information of a rotational direction of the movable body in the predetermined plane based on outputs of the plurality of 1 st heads.

23. The exposure apparatus according to claim 21 or 22, wherein the measurement device obtains a positional relationship between a 1 st part and a 2 nd part of at least 1 of the 1 st, 2 nd, and 3 rd grating parts based on outputs of the plurality of 1 st heads.

24. The exposure apparatus according to any one of claims 14 to 23 wherein a plurality of the moving bodies are provided.

25. The exposure apparatus according to claim 24 further comprising a moving body drive system that drives 2 moving bodies of the plurality of moving bodies, and drives the 2 moving bodies simultaneously in the predetermined direction while maintaining a parallel state in which the 2 moving bodies approach or contact in the predetermined direction within the predetermined plane when a 1 st state in which one of the 2 moving bodies is located in the 1 st region is shifted to a 2 nd state in which the other of the 2 moving bodies is located in the 1 st region.

26. The exposure apparatus according to claim 25, wherein a 4 th grating section is further disposed at a position where an encoder head provided to at least one of the 2 moving bodies in the parallel state can face on a surface parallel to the predetermined plane;

the measuring device measures positional information of at least one of the 2 moving bodies in the parallel state in the predetermined plane based on an output of the encoder head facing the 4 th grating section.

27. The exposure apparatus according to claim 25 or 26, wherein the predetermined direction is one of the 1 st direction and a 2 nd direction perpendicular to the 1 st direction.

28. The exposure apparatus according to any one of claims 25 to 27, wherein one of the 2 moving bodies moves within a 1 st range, the 1 st range including the 1 st, 2 nd, and 3 rd regions within the predetermined plane;

the other of the 2 moving bodies moves within a 2 nd range, the 2 nd range being different from at least a part of the 1 st range outside the 1 st region.

29. An exposure apparatus for exposing an object with an energy beam, comprising:

a 1 st moving body that holds the object thereon and is movable substantially along a predetermined plane within a 1 st range including 1 st, 2 nd, and 3 rd regions, the 1 st region including an exposure position at least exposing the loaded object, the 2 nd region being located on a 1 st direction side of the 1 st region at least replacing the object, the 3 rd region being located between the 1 st and 2 nd regions;

a 2 nd moving body that holds the object thereon and is movable substantially along a predetermined plane within a 2 nd range including the 1 st zone, a 4 th zone located on a 1 st direction side of the 1 st zone where at least replacement of the object is performed, and a 5 th zone between the 1 st zone and the 4 th zone;

1 st and 2 nd grating sections disposed at positions corresponding to the 3 rd and 5 th regions on a plane parallel to the predetermined plane, the positions being opposed to surfaces of the 1 st and 2 nd moving bodies substantially parallel to the predetermined plane, respectively; and

the measuring apparatus includes an encoder system having a 1 st and a 2 nd encoder head provided on a surface of the 1 st moving body and a surface of the 2 nd moving body, respectively, and measures positional information of the 1 st and the 2 nd moving bodies in the predetermined plane based on an output of the 1 st encoder head facing the 1 st grating portion and an output of the 2 nd encoder head facing the 2 nd grating portion, respectively.

30. The exposure apparatus of claim 29, wherein the 1 st extent and the 2 nd extent partially overlap.

31. The exposure apparatus according to claim 29 or 30, wherein the encoder system has a plurality of specific encoder heads that are at least one of the 1 st and 2 nd encoder heads, and measures positional information of a specific movable body provided with the specific encoder head among the 1 st and 2 nd movable bodies, within the predetermined plane, based on outputs of the plurality of specific encoder heads.

32. The exposure apparatus according to claim 31 wherein the state setting is performed by switching the following states in accordance with the movement of the movable body: a state in which 2 of the plurality of specific encoder heads simultaneously oppose 1 of the 1 st and 2 nd grating portions, and a state in which the 2 specific encoder heads individually and simultaneously oppose the 1 st and 2 nd grating portions.

33. The exposure apparatus according to claim 31 or 32, wherein the plurality of specific encoder heads includes a plurality of 1 st heads which are arranged at different positions on the surface of the movable body, respectively, with at least one of the 1 st direction and a 2 nd direction perpendicular to the 1 st direction within the predetermined plane as a measurement direction;

the plurality of 1 st heads simultaneously face a portion having a grating whose periodic direction is the measurement direction in at least 1 of the 1 st and 2 nd grating portions.

34. The exposure apparatus according to claim 33, wherein the measurement device measures positional information of the specific movable body in a rotational direction within the predetermined plane based on outputs of the plurality of 1 st heads.

35. The exposure apparatus according to claim 33 or 34, wherein the measurement device obtains a positional relationship between a 1 st part and a 2 nd part of at least 1 of the 1 st and 2 nd grating portions based on outputs of the plurality of 1 st heads.

36. The exposure apparatus according to any one of claims 1 to 35, further comprising:

an optical system provided at the exposure position; and

and a liquid immersion device that supplies a liquid to a space between the optical system and the movable body at the exposure position to form a liquid immersion area.

37. An exposure method for exposing an object with an energy beam, comprising:

a measurement step of measuring positional information of a movable body within a predetermined plane of a 3 rd region in a predetermined range including the 1 st, 2 nd and 3 rd regions, the movable body holding the object thereon and being movable substantially along a predetermined plane, based on an output of an encoder head provided on a surface of the movable body opposing a 1 st grating portion, the 1 st grating portion being located at a position corresponding to the 3 rd region on a plane parallel to the predetermined plane opposing a surface of the movable body substantially parallel to the predetermined plane, and measuring the positional information of the movable body at least in the 1 st and 2 nd regions using an interferometer system that irradiates a measurement beam onto a reflection surface provided on the movable body, the 1 st region including at least an exposure position to expose the loaded object, the 2 nd region being located on a 1 st direction side of the 1 st region, At least the object is replaced, and a 3 rd area is positioned between the 1 st area and the 2 nd area;

the 3 rd region includes a moving path of the movable body from which the measuring beam exits the reflecting surface.

38. The exposure method according to claim 37, wherein the 1 st grating part is arranged along a movement locus of the encoder head when the movable body moves between the 1 st region and the 2 nd region.

39. The exposure method according to claim 37 or 38, wherein 2 nd and 3 rd grating portions are further arranged at positions corresponding to the 1 st and 2 nd areas, respectively, on a plane parallel to the predetermined plane;

the measuring step measures positional information of the movable body in the 1 st and 2 nd regions in the predetermined plane based on outputs of encoder heads opposed to the 2 nd and 3 rd grating portions, respectively.

40. The exposure method according to claim 39, wherein a plurality of encoder heads are provided on a surface of the movable body;

the measuring step measures positional information of the movable body in the predetermined plane based on outputs of the plurality of encoder heads.

41. The exposure method according to claim 40 wherein the state setting is performed by switching the following states in accordance with the movement of the movable body: a state in which 2 of the plurality of encoder heads simultaneously face 1 of the 1 st, 2 nd, and 3 rd grating portions, and a state in which the 2 encoder heads individually and simultaneously face any 2 grating portions.

42. The exposure method according to claim 40 or 41, wherein the plurality of encoder heads includes a plurality of 1 st heads that are arranged at different positions on the surface of the movable body with at least one of the 1 st direction and a 2 nd direction perpendicular to the 1 st direction within the predetermined plane as a measurement direction;

the 1 st heads simultaneously face a portion having a grating whose periodic direction is the measurement direction in at least 1 of the 1 st, 2 nd, and 3 rd grating portions.

43. The exposure method according to claim 42, wherein the measuring step measures positional information of a rotational direction of the movable body in the predetermined plane based on outputs of the plurality of 1 st heads.

44. The exposure method according to claim 42 or 43, wherein the measuring step obtains a positional relationship between a 1 st part and a 2 nd part of at least 1 of the 1 st, 2 nd and 3 rd grating parts based on outputs of the plurality of 1 st heads.

45. The exposure method according to any one of claims 37 to 44, wherein a plurality of moving bodies are used.

46. The exposure method according to claim 45, further comprising:

further comprising the steps of: and driving 2 moving bodies of the plurality of moving bodies, and driving the 2 moving bodies simultaneously in the predetermined direction while maintaining a parallel state in which the 2 moving bodies approach or contact in the predetermined direction within the predetermined plane when shifting a 1 st state in which one of the 2 moving bodies is located in the 1 st zone to a 2 nd state in which the other of the 2 moving bodies is located in the 1 st zone.

47. The exposure method according to claim 46, wherein a 4 th grating section is further disposed at a position where an encoder head provided in at least one of the 2 moving bodies in the parallel state on a surface parallel to the predetermined plane can face the encoder head;

the measuring step measures positional information of at least one of the 2 moving bodies in the parallel state in the predetermined plane based on an output of the encoder head facing the 4 th grating section.

48. The exposure method according to claim 46 or 47, wherein the predetermined direction is one of the 1 st direction and a 2 nd direction perpendicular to the 1 st direction.

49. The exposure method according to any one of claims 46 to 48, wherein one of the 2 moving bodies moves within a 1 st range, the 1 st range including the 1 st, 2 nd, and 3 rd regions within the predetermined plane;

the other of the 2 moving bodies moves within a 2 nd range, the 2 nd range being different from at least a part of the 1 st range outside the 1 st region.

50. An exposure method for exposing an object with an energy beam, comprising:

a measurement step of measuring positional information of the movable body in a predetermined plane based on an output of the encoder head within a predetermined range including the 1 st, 2 nd and 3 rd regions, wherein the moving body holds the object thereon and is movable substantially along a predetermined plane, the encoder reading head is provided on a surface of the moving body opposite to any one of the 1 st, 2 nd, and 3 rd grating portions, the 1 st, 2 nd, and 3 rd grating parts are located at positions corresponding to the 1 st, 2 nd, and 3 rd regions on a plane parallel to the predetermined plane, which is opposite to a surface of the moving body substantially parallel to the predetermined plane, the 1 st region includes at least an exposure position for exposing the loaded object, the 2 nd region is located on one side of the 1 st region in the 1 st direction and at least performs replacement of the object, and the 3 rd region is located between the 1 st region and the 2 nd region.

51. The exposure method according to claim 50, wherein the 3 rd grating part is disposed along a movement locus of the encoder head when the movable body moves between the 1 st region and the 2 nd region.

52. The exposure method according to claim 50 or 51, wherein the 1 st grating portion and the 2 nd grating portion are arranged apart from each other.

53. The exposure method according to claim 52, wherein the 1 st grating portion and the 2 nd grating portion are arranged via the 3 rd grating portion.

54. The exposure method according to any one of claims 50 to 53, wherein the measuring step further measures positional information of the movable body at least in the 1 st area and the 2 nd area using an interferometer system that irradiates a measurement beam on a reflection surface provided on the movable body;

the 3 rd region includes a moving path of the movable body from which the measuring beam exits the reflecting surface.

55. The exposure method according to any one of claims 50 to 54, wherein a plurality of encoder heads are provided on a surface of the movable body;

the measuring step measures positional information of the movable body in the predetermined plane based on outputs of the plurality of encoder heads.

56. The exposure method according to claim 55, wherein the following state is switched in accordance with the movement of the movable body to perform the state setting: a state in which 2 of the plurality of encoder heads simultaneously oppose any 1 of the 1 st, 2 nd, and 3 rd grating portions, and a state in which the 2 encoder heads individually and simultaneously oppose any 2 of the 1 st, 2 nd, and 3 rd grating portions.

57. The exposure method according to claim 55 or 56, wherein the plurality of encoder heads includes a plurality of 1 st heads which are arranged at different positions on the surface of the movable body with at least one of the 1 st direction and a 2 nd direction perpendicular to the 1 st direction within the predetermined plane as a measurement direction,

the 1 st heads simultaneously face a portion having a grating whose periodic direction is the measurement direction in at least 1 of the 1 st, 2 nd, and 3 rd grating portions.

58. The exposure method according to claim 57, wherein in the measurement step, positional information of a rotational direction of the movable body within the predetermined plane is measured based on outputs of the plurality of 1 st heads.

59. The exposure method according to claim 57 or 58, wherein the measuring step obtains a positional relationship between a 1 st part and a 2 nd part of at least 1 of the 1 st, 2 nd and 3 rd grating parts based on outputs of the plurality of 1 st heads.

60. The exposure method according to any one of claims 50 to 59, wherein a plurality of moving bodies are used.

61. The exposure method according to claim 60, further comprising a driving step of: and driving 2 moving bodies of the plurality of moving bodies, and driving the 2 moving bodies simultaneously in the predetermined direction while maintaining a parallel state in which the 2 moving bodies approach or contact in the predetermined direction within the predetermined plane when shifting a 1 st state in which one of the 2 moving bodies is located in the 1 st zone to a 2 nd state in which the other of the 2 moving bodies is located in the 1 st zone.

62. The exposure method according to claim 61, wherein a 4 th grating section is further disposed at a position where an encoder head provided to at least one of the 2 moving bodies in the parallel state can face on a surface parallel to the predetermined plane;

the measuring step measures positional information of at least one of the 2 moving bodies in the parallel state in the predetermined plane based on an output of the encoder head facing the 4 th grating section.

63. The exposure method according to claim 61 or 62, wherein the predetermined direction is one of the 1 st direction and a 2 nd direction perpendicular to the 1 st direction.

64. The exposure method according to any one of claims 61 to 63, wherein one of the 2 moving bodies moves within a 1 st range, the 1 st range including the 1 st, 2 nd, and 3 rd regions within the predetermined plane;

the other of the 2 moving bodies moves within a 2 nd range, the 2 nd range being different from at least a part of the 1 st range outside the 1 st region.

65. An exposure method for exposing an object with an energy beam, comprising:

a measurement step of measuring positional information of the 1 st and 2 nd moving bodies within predetermined planes of the 3 rd and 5 th regions based on outputs of the 1 st and 2 nd encoder heads,

wherein the 1 st moving body holds the object thereon and is movable substantially along a predetermined plane within a 1 st range including 1 st, 2 nd, and 3 rd regions, the 1 st region including an exposure position at least exposing the loaded object, the 2 nd region being located on a 1 st direction side of the 1 st region at least performing replacement of the object, the 3 rd region being located between the 1 st and 2 nd regions;

a 2 nd moving body holding the object thereon and being movable substantially along a predetermined plane within a 2 nd range including the 1 st zone, a 4 th zone located on a 1 st direction side of the 1 st zone where at least replacement of the object is performed, and a 5 th zone between the 1 st zone and the 4 th zone;

the 1 st and 2 nd encoder heads are provided on a surface of the 1 st moving body opposing the 1 st grating portion and a surface of the 2 nd moving body opposing the 2 nd grating portion, respectively, and the 1 st and 2 nd grating portions are located at positions corresponding to the 3 rd and 5 th regions on a plane parallel to the predetermined plane opposing surfaces of the 1 st and 2 nd moving bodies substantially parallel to the predetermined plane, respectively.

66. The exposure method of claim 65, wherein the 1 st extent and the 2 nd extent partially overlap.

67. The exposure method according to claim 65 or 66, wherein a plurality of specific encoder heads are provided as at least one of the 1 st and 2 nd encoder heads,

the measuring step measures positional information of a specific moving body provided with the specific encoder head among the 1 st and 2 nd moving bodies, within the predetermined plane, based on outputs of the plurality of specific encoder heads.

68. The exposure method according to claim 67, wherein the state setting is performed by switching the following states in accordance with movement of the movable body: a state in which 2 of the plurality of specific encoder heads simultaneously oppose 1 of the 1 st and 2 nd grating portions, and a state in which the 2 specific encoder heads individually and simultaneously oppose the 1 st and 2 nd grating portions.

69. The exposure method according to claim 67 or 68, wherein the plurality of specific encoder heads includes a plurality of 1 st heads which are arranged at different positions on the surface of the movable body, respectively, with at least one of the 1 st direction and a 2 nd direction perpendicular to the 1 st direction within the predetermined plane as a measurement direction;

the plurality of 1 st heads simultaneously face a portion having a grating whose periodic direction is the measurement direction in at least 1 of the 1 st and 2 nd grating portions.

70. The exposure method according to claim 69, wherein the measurement step measures positional information of the specific movable body in a rotational direction within the predetermined plane based on outputs of the plurality of 1 st heads.

71. The exposure method according to claim 69 or 70, wherein the measuring step obtains a positional relationship between a 1 st part and a 2 nd part of at least 1 of the 1 st and 2 nd grating parts based on outputs of the plurality of 1 st heads.

72. The exposure method according to any one of claims 37 to 71, wherein the object on the movable body is exposed by irradiating an energy beam via a liquid of a liquid immersion area formed between an optical system provided at the exposure position and the movable body located at the exposure position.

73. A device manufacturing method, comprising:

an exposure step of exposing the object to light using the exposure method according to any one of claims 37 to 72; and

and a developing step of developing the exposed object.