[go: up one dir, main page]

HK1000630A1 - Process for making superconducting tl-pb-sr-ca-cu oxide films and devices - Google Patents

Process for making superconducting tl-pb-sr-ca-cu oxide films and devices Download PDF

Info

Publication number
HK1000630A1
HK1000630A1 HK97102175A HK97102175A HK1000630A1 HK 1000630 A1 HK1000630 A1 HK 1000630A1 HK 97102175 A HK97102175 A HK 97102175A HK 97102175 A HK97102175 A HK 97102175A HK 1000630 A1 HK1000630 A1 HK 1000630A1
Authority
HK
Hong Kong
Prior art keywords
oxide
film
temperature
thallium
superconducting
Prior art date
Application number
HK97102175A
Other languages
German (de)
English (en)
Chinese (zh)
Other versions
HK1000630B (en
Inventor
James Kountz Dennis
Matthew Pellicone Frank
Original Assignee
E.I. Du Pont De Nemours And Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E.I. Du Pont De Nemours And Company filed Critical E.I. Du Pont De Nemours And Company
Publication of HK1000630B publication Critical patent/HK1000630B/en
Publication of HK1000630A1 publication Critical patent/HK1000630A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/93—Electric superconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/742—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/775—High tc, above 30 k, superconducting material
    • Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
    • Y10S505/783—Thallium-, e.g. Tl2CaBaCu308

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Claims (12)

  1. Un procédé de fabrication d'une couche mince supraconductrice de Tl-Pb-Sr-Ca-Cu-O comprenant une phase de la formule Tl0,5Pb0,5Sr2Ca1+nCu2+nO7+2n où n = 0, 1 ou 2, ledit procédé consistant à
    (a) déposer par pulvérisation cathodique une couche d'oxyde sur un substrat diélectrique à partir d'une cible formée par (1) chauffage d'un mélange d'oxydes de Pb, Sr, Ca et Cu dans lequel 1 le rapport atomique Pb:Sr:Ca:Cu est b:c:d:e, où b est de 0 à 1, c est de 2 à 3,4, d est de 1 à 4 et e est de 2 à 5, et (2) pressage et chauffage dudit mélange,
    (b) placer ledit substrat portant ladite couche d'oxyde et une source d'oxyde de thallium et d'oxyde de plomb dans un récipient inerte avec une atmosphère contenant de l'oxygène, la quantité de thallium et de plomb contenue dans ladite source étant d'au moins 100 fois la quantité de thallium et de plomb nécessaire pour convertir ladite couche d'oxyde en Tl0,5Pb0,5Sr2Ca1+nCa2+nO7+2n,
    (c) chauffer ledit récipient à une température de 850°C à 950°C et maintenir à cette température pendant au moins 10 minutes, et
    (d) refroidir ledit récipient et recueillir la couche mince supraconductrice de Tl-Pb-Sr-Ca-Cu-O.
  2. Le procédé de la revendication 1, dans lequel une pulvérisation cathodique à magnétron HF est utilisée pour déposer ladite couche d'oxyde.
  3. Le procédé de la revendication 2, dans lequel b est 0,5, c est 2, d est 2 et e est 3.
  4. Le procédé de la revendication 2, dans lequel ledit substrat diélectrique est choisi dans le groupe formé par LaAlO3, NdGaO3, LaGaO3 et MgO.
  5. Le procédé de la revendication 4, dans lequel ladite source d'oxyde de thallium et d'oxyde de plomb comprend Tl0,5Pb0,5Sr2Ca2Cu3O9 et Tl2O3.
  6. Le procédé de la revendication 5, dans lequel ledit substrat diélectrique est LaAlO3, ladite température de chauffage de l'étape (c) est de 865°C à 950°C et le temps pendant lequel cette température est maintenue est d'au moins 1 heure.
  7. Le procédé de la revendication 3, dans lequel ledit substrat diélectrique est choisi dans le groupe formé par LaAlO3, NdGaO3 et LaGaO3, ladite source d'oxyde de thallium et d'oxyde de plomb consiste en 40 à 70 % en poids de Tl0,5Pb0,5Sr2Ca2Cu3O9 et 60 à 30 % en poids de Tl2O3, ladite température de chauffage de l'étape (c) est de 865°C à 920°C, le temps pendant lequel cette température est maintenue est d'au moins 30 minutes et ladite couche d'oxyde n'est pas exposée à une atmosphère ayant une humidité relative supérieure à 25 %.
  8. Le procédé de la revendication 7, dans lequel ladite source d'oxyde de thallium et d'oxyde de plomb consiste en 50 % en poids de Tl0,5Pb0,5Sr2Ca2Cu2O9 et 50 % en poids de Tl2O3.
  9. Le procédé de la revendication 7, dans lequel ledit substrat diélectrique est LaAlO3, ladite température de chauffage de l'étape (c) est de 865°C, et le temps pendant lequel cette température est maintenue est de 16 heures.
  10. Le procédé de la revendication 9, dans lequel ladite source d'oxyde de thallium et d'oxyde de plomb consiste en 50 % en poids de Tl0,5Pb0,5Sr2Ca2Cu3O9 et 50 % en poids de Tl2O3.
  11. Le procédé de la revendication 1, dans lequel ladite température de chauffage de l'étape (c) est de 850°C à 865°C ou de 920°C à 950°C.
  12. Le procédé de la revendication 1, dans lequel ledit substrat diélectrique est MgO, ladite température de chauffage de l'étape (c) est de 865°C et le temps pendant lequel cette température est maintenue est de moins de 1 heure.
HK97102175A 1991-06-06 1992-06-08 Process for making superconducting tl-pb-sr-ca-cu oxide films and devices HK1000630A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US710888 1985-03-11
US07/710,888 US5260251A (en) 1991-06-06 1991-06-06 Process for making superconducting Tl-Pb-Sr-Ca-Cu oxide films
PCT/US1992/004570 WO1992022921A2 (fr) 1991-06-06 1992-06-08 PROCEDE DE PRODUCTION DE COUCHES MINCES A BASE D'OXYDE DE Tl-Pb-Sr-Ca-Cu SUPRACONDUCTRICES ET DE DISPOSITIFS A PARTIR DE CELLES-CI

Publications (2)

Publication Number Publication Date
HK1000630B HK1000630B (en) 1998-04-09
HK1000630A1 true HK1000630A1 (en) 1998-04-09

Family

ID=24855944

Family Applications (1)

Application Number Title Priority Date Filing Date
HK97102175A HK1000630A1 (en) 1991-06-06 1992-06-08 Process for making superconducting tl-pb-sr-ca-cu oxide films and devices

Country Status (14)

Country Link
US (2) US5260251A (fr)
EP (1) EP0587772B1 (fr)
JP (1) JP3246740B2 (fr)
KR (1) KR100268698B1 (fr)
AT (1) ATE157199T1 (fr)
AU (1) AU655656B2 (fr)
CA (1) CA2109962C (fr)
DE (1) DE69221727T2 (fr)
DK (1) DK0587772T3 (fr)
ES (1) ES2104934T3 (fr)
GR (1) GR3025185T3 (fr)
HK (1) HK1000630A1 (fr)
SG (1) SG76472A1 (fr)
WO (1) WO1992022921A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268354A (en) * 1992-03-20 1993-12-07 E. I. Du Pont De Nemours And Comapny Process for making superconducting Tl-Pb-Sr-Ca-Cu-O films
JPH06219736A (ja) * 1993-01-27 1994-08-09 Hitachi Ltd 超電導体
US5919735A (en) * 1994-11-04 1999-07-06 Agency Of Industrial Science And Technology High temperature superconductor
US5688383A (en) * 1996-02-22 1997-11-18 E. I. Du Pont De Nemours And Company Method for improving the performance of high temperature superconducting thin film wafers
US6407218B1 (en) * 1997-11-10 2002-06-18 Cytimmune Sciences, Inc. Method and compositions for enhancing immune response and for the production of in vitro mabs
JP2002266072A (ja) * 2001-03-09 2002-09-18 Sumitomo Electric Ind Ltd 積層膜および成膜方法
US7321884B2 (en) * 2004-02-23 2008-01-22 International Business Machines Corporation Method and structure to isolate a qubit from the environment
US11437245B2 (en) * 2020-09-30 2022-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Germanium hump reduction
FR3122585A1 (fr) 2021-05-04 2022-11-11 Universite Claude Bernard Lyon 1 Solide mésoporeux pour réguler l’humidité dans les espaces clos

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4894361A (en) * 1988-08-10 1990-01-16 E. I. Du Pont De Nemours And Company Superconducting metal oxide Tl-Pb-Ca-Sr-O compositions and processes for manufacture and use
CA1338864C (fr) * 1988-08-10 1997-01-21 Hideo Itozaki Procede de fabrication de pellicule mince superconductrice a base de thallium

Also Published As

Publication number Publication date
DE69221727T2 (de) 1997-12-18
US5260251A (en) 1993-11-09
WO1992022921A2 (fr) 1992-12-23
GR3025185T3 (en) 1998-02-27
KR940701585A (ko) 1994-05-28
JP3246740B2 (ja) 2002-01-15
DK0587772T3 (da) 1997-09-15
CA2109962C (fr) 2002-05-21
AU2185992A (en) 1993-01-12
EP0587772B1 (fr) 1997-08-20
KR100268698B1 (ko) 2000-10-16
ATE157199T1 (de) 1997-09-15
WO1992022921A3 (fr) 1993-03-04
AU655656B2 (en) 1995-01-05
ES2104934T3 (es) 1997-10-16
JPH06508242A (ja) 1994-09-14
SG76472A1 (en) 2000-11-21
EP0587772A1 (fr) 1994-03-23
US5342828A (en) 1994-08-30
DE69221727D1 (de) 1997-09-25
CA2109962A1 (fr) 1992-12-23

Similar Documents

Publication Publication Date Title
JP2567460B2 (ja) 超伝導薄膜とその作製方法
CA1332326C (fr) Preparation de films d'oxyde supraconducteur sur des substrats de silicium et de dioxyde de silicium
JP2664066B2 (ja) 超電導薄膜およびその作製方法
EP0286106A2 (fr) Procédé pour fabriquer un dispositif supraconducteur
EP0282839B2 (fr) Couches d'oxydes supraconducteurs à hautes Tc et leur procédé de fabrication
EP0587772B1 (fr) PROCEDE DE PRODUCTION DE COUCHES MINCES A BASE D'OXYDE DE Tl-Pb-Sr-Ca-Cu SUPRACONDUCTRICES ET DE DISPOSITIFS A PARTIR DE CELLES-CI
US5179070A (en) Semiconductor substrate having a superconducting thin film with a buffer layer in between
Yun et al. Fabrication of c‐oriented HgBa2Ca2Cu3O8+ δ superconducting thin films
HK1000630B (en) Process for making superconducting tl-pb-sr-ca-cu oxide films and devices
EP0341148B1 (fr) Substrat semiconducteur ayant une couche mince supraconductrice
EP0347336B1 (fr) Procédé pour le dépôt d'une couche mince de supraconducteur
US5196398A (en) Process for producing thallium type superconducting thin film
US5219834A (en) Process for producing a superconducting transistor
EP0357500B1 (fr) Procédé pour préparer un film mince supraconducteur de type bismuth
JP2501035B2 (ja) 超電導薄膜
US5296455A (en) Process for preparing superconductor of compound oxide of Bi-Sr-Ca-Cu system
EP0624910A1 (fr) Supraconducteur et procédé de fabrication
US5444039A (en) (Hg,Pb)-Ba-Ca-Cu-O superconductor and method of manufacturing the same
JP2645730B2 (ja) 超電導薄膜
JP3230329B2 (ja) 超電導装置用基板の表面清浄化方法
JP3813493B2 (ja) 複合基板
Dorothy et al. High Temperature Superconducting Microwave Components
JP2778119B2 (ja) 複合酸化物超電導薄膜と、その成膜方法
Subramanyam et al. Fabrication and patterning of Tl-Ca-Ba-Cu-O superconducting thin films on LaAlO3 substrates
Fang et al. Growth of superconducting Hg-1212 very-thin films

Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20050608