GB839861A - Improvements in or relating to processes for the production of ultra-pure semi-conductor substances and to composite semi-conductors prepared therefrom - Google Patents
Improvements in or relating to processes for the production of ultra-pure semi-conductor substances and to composite semi-conductors prepared therefromInfo
- Publication number
- GB839861A GB839861A GB24343/56A GB2434356A GB839861A GB 839861 A GB839861 A GB 839861A GB 24343/56 A GB24343/56 A GB 24343/56A GB 2434356 A GB2434356 A GB 2434356A GB 839861 A GB839861 A GB 839861A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- crystal
- silicon
- conductor
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 239000002131 composite material Substances 0.000 title abstract 3
- 239000000126 substance Substances 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 abstract 8
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 239000003792 electrolyte Substances 0.000 abstract 2
- 239000000155 melt Substances 0.000 abstract 2
- 238000001947 vapour-phase growth Methods 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000370 acceptor Substances 0.000 abstract 1
- 229910052783 alkali metal Inorganic materials 0.000 abstract 1
- 150000001340 alkali metals Chemical class 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 238000005868 electrolysis reaction Methods 0.000 abstract 1
- 229910021480 group 4 element Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 150000002894 organic compounds Chemical class 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- 239000011591 potassium Substances 0.000 abstract 1
- 150000003377 silicon compounds Chemical class 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
839,861. Semi-conductors. SIEMENS & HALSKE A.G. Aug. 8, 1956 [Aug. 8, 1955], No. 24343/56. Class 41. A pure semi-conductor substance is made by cathodic reduction of a compound containing a semi-conductor substance maintained in liquid phase on to a solid support which may also be a semi-conductor. A molten solution of alkali metal fluosilicate or fluogermanate may be used and the silicon or germanium electrolytically deposited on a single crystal of silicon, which may be produced by vapour phase decomposition of a silicon compound as described in Specification 809,250. Alternate layers of silicon, germanium, indium or antimony may be deposited, and the composite semi-conductor body submitted to heat treatment, e.g. zone melting, whereby two or more layers are formed into an alloy. The additional layers may be deposited by electrolysis of the molten compound or by vapour phase decomposition as described in Specification 809,250, preferably in the presence of hydrogen. A single crystal may be floated on the surface of the melt and slightly raised as deposition on the underside proceeds. In Fig. 3, a crystal 4 is mounted vertically in molten electrolyte 2 containing silicon, and an electrode 5 is mounted parallel with the crystal 4, and maintained at a constant distance therefrom as deposition proceeds, whereby the crystal grows in one direction only. Molten electrolyte may be replaced by organic compounds of silicon or germanium dissolved in an organic solvent. In a further modification two electrodes, mounted on opposite sides of the crystal are moved outwards, producing a layer on each face of the crystal. With suitably shaped electrodes the crystal is grown in the shape of a disc. A mixture of potassium fluosilicate and fluogermanate is used and maintained at 700‹ C. Impurities, donors and acceptors may be added to the melt. Semi-conductor composite bodies may be formed as alloys of Group IV elements, or combinations of Group III and V or Group II and VI.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE839861X | 1955-08-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB839861A true GB839861A (en) | 1960-06-29 |
Family
ID=6762051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24343/56A Expired GB839861A (en) | 1955-08-08 | 1956-08-08 | Improvements in or relating to processes for the production of ultra-pure semi-conductor substances and to composite semi-conductors prepared therefrom |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB839861A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2355634C1 (en) * | 2008-03-24 | 2009-05-20 | Государственное образовательное учреждение высшего профессионального образования Томский политехнический университет | Method of high-purity silica preparation |
-
1956
- 1956-08-08 GB GB24343/56A patent/GB839861A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2355634C1 (en) * | 2008-03-24 | 2009-05-20 | Государственное образовательное учреждение высшего профессионального образования Томский политехнический университет | Method of high-purity silica preparation |
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