GB826575A - Improvements in or relating to methods of producing silicon of high purity - Google Patents
Improvements in or relating to methods of producing silicon of high purityInfo
- Publication number
- GB826575A GB826575A GB3142556A GB3142556A GB826575A GB 826575 A GB826575 A GB 826575A GB 3142556 A GB3142556 A GB 3142556A GB 3142556 A GB3142556 A GB 3142556A GB 826575 A GB826575 A GB 826575A
- Authority
- GB
- United Kingdom
- Prior art keywords
- decomposition
- seed
- silane
- silicon
- induction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 5
- 239000010703 silicon Substances 0.000 title abstract 5
- 238000000354 decomposition reaction Methods 0.000 abstract 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 5
- 229910000077 silane Inorganic materials 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 230000006698 induction Effects 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Lubricants (AREA)
- Silicon Compounds (AREA)
Abstract
Silicon is produced from silane at a molar concentration less than "normal" by decomposition at a surface heated by induction directly by means of a concentrator coil supplied with high-frequency alternating current. The reduced concentration may be produced either by using substantially pure silane having a sub-atmospheric pressure or a mixture of substantially pure silane and an inert gas in which the silane has a sub-atmospheric pressure. Decomposition may take place at the surface of a silicon seed which is moved continuously from the decomposition zone so as to build up a body of silicon, in which case the seed may be preheated by radiation from a surrounding carbon tube itself heated by induction, or at a surface of molybdenum, in which case preheating is unnecessary. Examples are given specifying pressure, decomposition temperature, flow rate, growth rate, and percentage decomposition. A silicon crystal is grown in a vacuum sealed apparatus, part of which is shown, in which silane is injected <PICT:0826575/III/1> from a water-cooled pipe 31 on to a seed 43 situated on a plate 18 which may be continuously lowered as the decomposition proceeds. A water-cooled single-turn induction heating coil in the form of an annular copper box 26 having a radial slot 27 is situated just above the seed. A perforated carbon tube 21 surrounds plate 18 at the commencement of heating, and is lowered when the seed has been sufficiently heated by radiation. The growth of the crystal may be viewed through a glass or quartz tube 42, a band 44 of which is maintained clean by a wiper 15. The induction heating coil may alternatively have more than one turn.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEI9153A DE1042553B (en) | 1953-09-25 | 1954-09-18 | Process for the production of high purity silicon |
| GB3142556A GB826575A (en) | 1956-10-16 | 1956-10-16 | Improvements in or relating to methods of producing silicon of high purity |
| DE19571417137 DE1417137B2 (en) | 1956-10-16 | 1957-09-21 | Process for the production of high purity silicon |
| DE19571417138 DE1417138A1 (en) | 1956-10-16 | 1957-10-10 | Process and apparatus for producing high purity silicon |
| CH5159057A CH388918A (en) | 1956-10-16 | 1957-10-15 | Process and device for the production of high purity silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3142556A GB826575A (en) | 1956-10-16 | 1956-10-16 | Improvements in or relating to methods of producing silicon of high purity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB826575A true GB826575A (en) | 1960-01-13 |
Family
ID=10322909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3142556A Expired GB826575A (en) | 1953-09-25 | 1956-10-16 | Improvements in or relating to methods of producing silicon of high purity |
Country Status (3)
| Country | Link |
|---|---|
| CH (1) | CH388918A (en) |
| DE (1) | DE1417138A1 (en) |
| GB (1) | GB826575A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8414863B2 (en) | 2006-07-25 | 2013-04-09 | Spawnt Private S.A.R.L. | Hydrogen and energy generation by thermal conversion of silanes |
| US12209019B2 (en) | 2018-11-28 | 2025-01-28 | Hysilabs, Sas | Catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2530607B1 (en) * | 1982-07-26 | 1985-06-28 | Rhone Poulenc Spec Chim | PURE SILICON, DENSE POWDER AND PROCESS FOR PREPARING SAME |
-
1956
- 1956-10-16 GB GB3142556A patent/GB826575A/en not_active Expired
-
1957
- 1957-10-10 DE DE19571417138 patent/DE1417138A1/en active Pending
- 1957-10-15 CH CH5159057A patent/CH388918A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8414863B2 (en) | 2006-07-25 | 2013-04-09 | Spawnt Private S.A.R.L. | Hydrogen and energy generation by thermal conversion of silanes |
| US12209019B2 (en) | 2018-11-28 | 2025-01-28 | Hysilabs, Sas | Catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds |
Also Published As
| Publication number | Publication date |
|---|---|
| CH388918A (en) | 1965-03-15 |
| DE1417138B2 (en) | 1970-09-10 |
| DE1417138A1 (en) | 1968-10-10 |
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