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GB2468877B - New forms of neutron radiation detectors - Google Patents

New forms of neutron radiation detectors

Info

Publication number
GB2468877B
GB2468877B GB0905077A GB0905077A GB2468877B GB 2468877 B GB2468877 B GB 2468877B GB 0905077 A GB0905077 A GB 0905077A GB 0905077 A GB0905077 A GB 0905077A GB 2468877 B GB2468877 B GB 2468877B
Authority
GB
United Kingdom
Prior art keywords
radiation detectors
new forms
neutron radiation
neutron
detectors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0905077A
Other versions
GB2468877A (en
GB0905077D0 (en
Inventor
Jeffery Boardman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB0905077A priority Critical patent/GB2468877B/en
Publication of GB0905077D0 publication Critical patent/GB0905077D0/en
Publication of GB2468877A publication Critical patent/GB2468877A/en
Application granted granted Critical
Publication of GB2468877B publication Critical patent/GB2468877B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T3/00—Measuring neutron radiation
    • G01T3/08—Measuring neutron radiation with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T3/00—Measuring neutron radiation
    • G01T3/06—Measuring neutron radiation with scintillation detectors
    • H01L31/0321—
    • H01L31/115—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
GB0905077A 2009-03-25 2009-03-25 New forms of neutron radiation detectors Expired - Fee Related GB2468877B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0905077A GB2468877B (en) 2009-03-25 2009-03-25 New forms of neutron radiation detectors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0905077A GB2468877B (en) 2009-03-25 2009-03-25 New forms of neutron radiation detectors

Publications (3)

Publication Number Publication Date
GB0905077D0 GB0905077D0 (en) 2009-05-06
GB2468877A GB2468877A (en) 2010-09-29
GB2468877B true GB2468877B (en) 2011-08-10

Family

ID=40640099

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0905077A Expired - Fee Related GB2468877B (en) 2009-03-25 2009-03-25 New forms of neutron radiation detectors

Country Status (1)

Country Link
GB (1) GB2468877B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040173753A1 (en) * 2003-03-07 2004-09-09 Renesas Technology Corp. Semiconductor device for detecting neutron
WO2007109535A2 (en) * 2006-03-16 2007-09-27 Kansas State University Research Foundation Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040173753A1 (en) * 2003-03-07 2004-09-09 Renesas Technology Corp. Semiconductor device for detecting neutron
WO2007109535A2 (en) * 2006-03-16 2007-09-27 Kansas State University Research Foundation Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same

Also Published As

Publication number Publication date
GB2468877A (en) 2010-09-29
GB0905077D0 (en) 2009-05-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20140325