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GB2352825B - Top-coating composition for photoresist and process for forming fine pattern using the same - Google Patents

Top-coating composition for photoresist and process for forming fine pattern using the same

Info

Publication number
GB2352825B
GB2352825B GB0012727A GB0012727A GB2352825B GB 2352825 B GB2352825 B GB 2352825B GB 0012727 A GB0012727 A GB 0012727A GB 0012727 A GB0012727 A GB 0012727A GB 2352825 B GB2352825 B GB 2352825B
Authority
GB
United Kingdom
Prior art keywords
photoresist
same
coating composition
fine pattern
forming fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0012727A
Other versions
GB2352825A (en
GB0012727D0 (en
Inventor
Jae-Chang Jung
Keun-Kyu Kong
Hyeong-Soo Kim
Jin Soo Kim
Cha Won Koh
Sung-Eun Hong
Geun-Su Lee
Min-Ho Jung
Baik Ki Ho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB0012727D0 publication Critical patent/GB0012727D0/en
Publication of GB2352825A publication Critical patent/GB2352825A/en
Application granted granted Critical
Publication of GB2352825B publication Critical patent/GB2352825B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
GB0012727A 1999-06-03 2000-05-26 Top-coating composition for photoresist and process for forming fine pattern using the same Expired - Fee Related GB2352825B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-1999-0020538A KR100401116B1 (en) 1999-06-03 1999-06-03 Amine contamination-protecting material and a fine pattern forming method using the same

Publications (3)

Publication Number Publication Date
GB0012727D0 GB0012727D0 (en) 2000-07-19
GB2352825A GB2352825A (en) 2001-02-07
GB2352825B true GB2352825B (en) 2003-12-17

Family

ID=19589910

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0012727A Expired - Fee Related GB2352825B (en) 1999-06-03 2000-05-26 Top-coating composition for photoresist and process for forming fine pattern using the same

Country Status (9)

Country Link
JP (1) JP2001022080A (en)
KR (1) KR100401116B1 (en)
CN (1) CN1215375C (en)
DE (1) DE10027587A1 (en)
FR (1) FR2794538B1 (en)
GB (1) GB2352825B (en)
IT (1) IT1320493B1 (en)
NL (1) NL1015367C2 (en)
TW (1) TWI266958B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100537181B1 (en) * 1999-12-30 2005-12-16 주식회사 하이닉스반도체 Method for forming photoresist pattern capable of preventing degradation caused with delaying develop after exposure
KR100390991B1 (en) * 2001-05-29 2003-07-12 주식회사 하이닉스반도체 Forming method for photoresist pattern of semiconductor device
KR100390998B1 (en) * 2001-06-26 2003-07-12 주식회사 하이닉스반도체 Method for forming photoresist pattern of semiconductor device
JP3476082B2 (en) * 2001-11-05 2003-12-10 東京応化工業株式会社 Coating forming agent for pattern refinement and method for forming fine pattern using the same
RU2222847C1 (en) * 2002-10-21 2004-01-27 Государственное предприятие "Центр технологий микроэлектроники" Nanosensor system
KR100642416B1 (en) 2004-08-31 2006-11-03 주식회사 하이닉스반도체 Top anti-reflective coating composition and pattern forming method of semiconductor device using the same
US20060127821A1 (en) * 2004-12-09 2006-06-15 Sanyo Electric Co., Ltd. Method of forming a photoresist pattern
US8168367B2 (en) 2008-07-11 2012-05-01 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
CN104937493B (en) * 2013-01-24 2019-11-08 日产化学工业株式会社 Composition for forming resist upper layer film for lithography and method for manufacturing semiconductor device
JP6007199B2 (en) * 2013-01-31 2016-10-12 富士フイルム株式会社 Pattern forming method and electronic device manufacturing method using the same
KR102655599B1 (en) * 2023-07-17 2024-04-08 와이씨켐 주식회사 Coating composition for preventing leaning of semiconsuctor pattern and pattern coated using the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3652273A (en) * 1967-09-11 1972-03-28 Ibm Process using polyvinyl butral topcoat on photoresist layer
EP0275147A2 (en) * 1987-01-12 1988-07-20 E.I. du Pont de Nemours and Company Improvements in or relating to printing plate precursors
EP0290916A2 (en) * 1987-05-12 1988-11-17 Hoechst Aktiengesellschaft Radiation-sensitive registration material
WO1992005474A1 (en) * 1990-09-18 1992-04-02 International Business Machines Corporation Top coat for acid catalyzed resists
EP0488372A1 (en) * 1990-11-30 1992-06-03 Matsushita Electric Industrial Co., Ltd. Fine pattern forming process
DE4117127A1 (en) * 1991-05-25 1992-11-26 Basf Ag Light-sensitive recording element with mask formed directly on top coat - comprising tear-resistant polymer, used as resist or esp. in computer to plate process
DE4415113A1 (en) * 1993-04-30 1994-11-24 Toyo Boseki Multi-layer photopolymer element

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5034966B2 (en) * 1972-07-24 1975-11-12
SG52770A1 (en) * 1992-07-10 1998-09-28 Hoechst Celanese Corp Metal ion reduction in top anti-reflective coatings for photoresists
US5631314A (en) * 1994-04-27 1997-05-20 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition
US5506090A (en) * 1994-09-23 1996-04-09 Minnesota Mining And Manufacturing Company Process for making shoot and run printing plates
JP3510003B2 (en) * 1995-05-01 2004-03-22 クラリアント インターナショナル リミテッド Composition for anti-reflective coating
JPH0971765A (en) * 1995-06-29 1997-03-18 Nippon Zeon Co Ltd Anti-adhesive composition
JP3694703B2 (en) * 1996-04-25 2005-09-14 Ａｚエレクトロニックマテリアルズ株式会社 Anti-reflection coating composition
JPH10261574A (en) * 1997-03-19 1998-09-29 Fujitsu Ltd Method for manufacturing semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3652273A (en) * 1967-09-11 1972-03-28 Ibm Process using polyvinyl butral topcoat on photoresist layer
EP0275147A2 (en) * 1987-01-12 1988-07-20 E.I. du Pont de Nemours and Company Improvements in or relating to printing plate precursors
EP0290916A2 (en) * 1987-05-12 1988-11-17 Hoechst Aktiengesellschaft Radiation-sensitive registration material
WO1992005474A1 (en) * 1990-09-18 1992-04-02 International Business Machines Corporation Top coat for acid catalyzed resists
EP0488372A1 (en) * 1990-11-30 1992-06-03 Matsushita Electric Industrial Co., Ltd. Fine pattern forming process
DE4117127A1 (en) * 1991-05-25 1992-11-26 Basf Ag Light-sensitive recording element with mask formed directly on top coat - comprising tear-resistant polymer, used as resist or esp. in computer to plate process
DE4415113A1 (en) * 1993-04-30 1994-11-24 Toyo Boseki Multi-layer photopolymer element

Also Published As

Publication number Publication date
CN1276541A (en) 2000-12-13
JP2001022080A (en) 2001-01-26
KR100401116B1 (en) 2003-10-10
GB2352825A (en) 2001-02-07
FR2794538A1 (en) 2000-12-08
GB0012727D0 (en) 2000-07-19
CN1215375C (en) 2005-08-17
KR20010001380A (en) 2001-01-05
ITTO20000510A0 (en) 2000-06-01
TWI266958B (en) 2006-11-21
NL1015367A1 (en) 2000-12-06
NL1015367C2 (en) 2001-05-17
IT1320493B1 (en) 2003-12-10
DE10027587A1 (en) 2000-12-21
FR2794538B1 (en) 2004-08-20
ITTO20000510A1 (en) 2001-12-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130526