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GB2186116B - Plasma enhanced chemical vapor deposited vertical resistor - Google Patents

Plasma enhanced chemical vapor deposited vertical resistor

Info

Publication number
GB2186116B
GB2186116B GB8623954A GB8623954A GB2186116B GB 2186116 B GB2186116 B GB 2186116B GB 8623954 A GB8623954 A GB 8623954A GB 8623954 A GB8623954 A GB 8623954A GB 2186116 B GB2186116 B GB 2186116B
Authority
GB
United Kingdom
Prior art keywords
chemical vapor
plasma enhanced
enhanced chemical
vapor deposited
vertical resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8623954A
Other versions
GB2186116A (en
GB8623954D0 (en
Inventor
Leopoldo D Yau
Shih-Ou Chen
Yih Shung Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of GB8623954D0 publication Critical patent/GB8623954D0/en
Publication of GB2186116A publication Critical patent/GB2186116A/en
Application granted granted Critical
Publication of GB2186116B publication Critical patent/GB2186116B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
GB8623954A 1986-02-03 1986-10-06 Plasma enhanced chemical vapor deposited vertical resistor Expired GB2186116B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82531486A 1986-02-03 1986-02-03

Publications (3)

Publication Number Publication Date
GB8623954D0 GB8623954D0 (en) 1986-11-12
GB2186116A GB2186116A (en) 1987-08-05
GB2186116B true GB2186116B (en) 1989-11-22

Family

ID=25243686

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8623954A Expired GB2186116B (en) 1986-02-03 1986-10-06 Plasma enhanced chemical vapor deposited vertical resistor

Country Status (4)

Country Link
JP (1) JPS62186557A (en)
CN (1) CN1005880B (en)
DE (1) DE3702409A1 (en)
GB (1) GB2186116B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7294553B2 (en) * 2002-05-29 2007-11-13 Infineon Technologies Ag Plasma-enhanced chemical vapour deposition process for depositing silicon nitride or silicon oxynitride, process for producing one such layer arrangement, and layer arrangement

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62291956A (en) * 1986-06-12 1987-12-18 Matsushita Electric Ind Co Ltd Semiconductor device
JPH0727980B2 (en) * 1988-07-19 1995-03-29 三菱電機株式会社 Semiconductor device having high resistance layer
US6222328B1 (en) 1998-04-21 2001-04-24 Sony Corporation Horizontal deflection circuit
US9748327B2 (en) * 2014-06-18 2017-08-29 Intel Corporation Pillar resistor structures for integrated circuitry
JP7345354B2 (en) * 2019-10-25 2023-09-15 三菱電機株式会社 semiconductor equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1488728A (en) * 1974-06-18 1977-10-12 Sony Corp Thin film resistors
EP0122659A2 (en) * 1983-04-06 1984-10-24 Koninklijke Philips Electronics N.V. Method of manufacturing a high resistance layer having a low temperature coefficient of resistance and semiconductor device having such high resistance layer
EP0165538A2 (en) * 1984-06-22 1985-12-27 International Business Machines Corporation A resistor for a group III-V intermetallic compound semiconductor integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1488728A (en) * 1974-06-18 1977-10-12 Sony Corp Thin film resistors
EP0122659A2 (en) * 1983-04-06 1984-10-24 Koninklijke Philips Electronics N.V. Method of manufacturing a high resistance layer having a low temperature coefficient of resistance and semiconductor device having such high resistance layer
EP0165538A2 (en) * 1984-06-22 1985-12-27 International Business Machines Corporation A resistor for a group III-V intermetallic compound semiconductor integrated circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
S.M.Sze, VLSI Technology 1983 McGraw *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7294553B2 (en) * 2002-05-29 2007-11-13 Infineon Technologies Ag Plasma-enhanced chemical vapour deposition process for depositing silicon nitride or silicon oxynitride, process for producing one such layer arrangement, and layer arrangement

Also Published As

Publication number Publication date
CN86107982A (en) 1987-08-12
GB2186116A (en) 1987-08-05
JPS62186557A (en) 1987-08-14
DE3702409A1 (en) 1987-08-06
GB8623954D0 (en) 1986-11-12
CN1005880B (en) 1989-11-22

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19931006