GB2183204A - Nitrogen trifluoride as an in-situ cleaning agent - Google Patents
Nitrogen trifluoride as an in-situ cleaning agent Download PDFInfo
- Publication number
- GB2183204A GB2183204A GB08613285A GB8613285A GB2183204A GB 2183204 A GB2183204 A GB 2183204A GB 08613285 A GB08613285 A GB 08613285A GB 8613285 A GB8613285 A GB 8613285A GB 2183204 A GB2183204 A GB 2183204A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cleaning
- reactor
- vapor deposition
- chemical vapor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000011065 in-situ storage Methods 0.000 title description 13
- 239000012459 cleaning agent Substances 0.000 title description 9
- 238000000034 method Methods 0.000 claims abstract description 71
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 46
- 235000012431 wafers Nutrition 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 238000005530 etching Methods 0.000 claims abstract description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000003870 refractory metal Substances 0.000 claims abstract description 13
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 8
- 229910021341 titanium silicide Inorganic materials 0.000 claims abstract description 8
- 229910021342 tungsten silicide Inorganic materials 0.000 claims abstract description 8
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract 6
- 238000004140 cleaning Methods 0.000 claims description 86
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000010453 quartz Substances 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000010926 purge Methods 0.000 claims description 12
- 229910001873 dinitrogen Inorganic materials 0.000 claims 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 5
- 238000005086 pumping Methods 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000002253 acid Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- -1 generally used Chemical class 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5346—Dry etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Chemical vapor deposition hardware and semiconductor wafers are cleaned utilizing nitrogen trifluoride as an etching agent wherein the nitrogen trifluoride is introduced into a heated chemical vapor deposition reactor under a partial pressure for a period of time sufficient to clean the deposited film of material. The etching agent and method of etching is suitable to remove substantially all deposited quantities of silicon nitride, polycrystalline silicon, titanium silicide, tungsten silicide, refractory metals and their silicides.
Description
SPECIFICATION
Nitrogen trifluoride as an in-situ cleaning agent and method for cleaning boats and tubes using nitrogen trifluoride
This invention relates generally a cleaning agent and method of cleaning boats and tubes used in wafer fabrication facilities. More particularly, the present invention relates to the use of nitrogen trifluoride as a cleaning agent for cleaning silicon nitride and polycrystalline silicon films from boats and tubes used in the chemical vapor deposition of semiconductor wafers. Further, the present invention relates to a method of cleaning residual silicon films from boats and tubes used in semiconductor wafer fabrication facilities.
Boats, tubes and other associated quartz hardware used in the chemical vapor deposition fabrication of semiconductor wafers become contaminated by polycrystalline silicon, silicon nitride, tungsten, titanium or other material which is deposited upon the wafer substrate during a chemical vapor deposition run. To insure accurate and unadulterated chemical vapor deposition onto a substrate it is necessary to clean or etch adulterating substances from the boats, tubes and other quartz hardware used in the fabrication of semiconductor wafers. However, several serious problems exist with conventional cleaning agents and methods for cleaning the boats, tubes and other quartz hardware used in chemical vapor deposition fabrication facilities.
Conventional cleaning or etching agents and methods require that the chemical vapor deposition tube be removed from the production line for cleaning. Removal of the tube is not only time consuming but also increases production costs. The tube, boats and other quartzware is then cleaned with acids, generally used, acids consist of hydrofluoric acid, nitric acid, hydrochloric acid, or phosphoric acid. These cleaning agents necessitate wet cleaning techniques which present substantial health, safety and environmental concerns. Moreover, due to the high temperatures generated in the fabrication facility during a deposition run, conventional cleaning or etching agents and methods require long periods of time to permit the quartz hardware to cool before cleaning may begin.
Therefore, it has been found desirable to provide a cleaning agent for in-situ cleaning of the deposition tube and associated hardware. An in-situ cleaning method would eliminate substanially all of the non-production time associated with conventional cleaning agents and cleaning methods as well as the health, safety and environmental hazards associated with handling conventional acid cleaning agents.
Accordingly, it is an object of the present invention to provide a cleaning or etching agent for in-situ cleaning of chemical vapor deposition apparatus tubes, boats and associated quartz hardware.
It is another object of the present invention to provide a method for the in-situ cleaning or etching of chemical vapor deposition apparatus tubes, boats and associated quartz hardware.
It is still another object of the present invention to provide a cleaning or etching agent for insitu cleaning which eliminates the necessity of using wet cleaning techniques.
It is yet another object of the present invention to provide a method of in-situ cleaning which eliminates the necessity of using wet cleaning techniques.
It is a further object of the present invention to employ nitrogen trifluoride as a cleaning or etching agent for in-situ cleaning of chemical vapor deposition apparatus tubes, boats and associated quartz hardware.
It is a still further object of the present invention to provide a method of cleaning or etching of chemical vapor deposition apparatus tubes, boats and associated quartz hardware employing nitrogen trifluoride as a cleaning or etching agent.
It is yet a further object of the present invention to provide a cleaning or etching agent which will remove silicon nitride, polycrystalline silicon, titanium, tungsten and other materials deposited onto semiconductor wafers in a chemical vapor deposition apparatus.
It is another object of the present invention to provide a cleaning or etching agent and method which will remove silicon nitride, polycrystalline silicon, titanium, tungsten and other materials deposited onto semiconductor wafers in a chemical vapor deposition apparatus without removing the underlying wafer substrate.
It is still another object of the present invention to employ nitrogen trifluoride as a cleaning or etching agent for in-situ removal of silicon nitride, polycrystalline silicon, titanium, tungsten and other materials deposited onto semiconductor wafers in a chemical vapor deposition apparatus.
It is yet another object of the present invention to provide a method of in-situ cleaning or etching employing nitrogen trifluoride for the removal of silicon nitride, polycrystalline silicon, titanium, tungsten and other materials deposited onto semiconductor wafers in a chemical vapor deposition apparatus.
These and other objects, features and advantages hereinafter disclosed will be more apparent from the following more detailed description of the preferred embodiment of the present invention.
According to the present invention there is provided a cleaning or etching agent for etching silicon nitride, polycrystalline silicon, titanium, tungsten or other materials typically deposited onto semiconductor wafers during a chemical vapor deposition run, comprising nitrogen trifluoride. The chemical vapor deposition tube, boats and associated quartz hardware used in growing silicon nitride, polycrystalline silicon, tungsten or titanium silicide or other refractory metals or their silicides and other films may be cleaned by the nitrogen trifluoride in their respective deposition chambers without necessitating their time consuming removal.
This in-situ cleaning provides for cleaner reaction chambers, and the nitrogen trifluoride, which is a gas at ambient temperatures, may be used with chemical vapor deposition equipment used in wafer fabrication. Further, the in-situ cleaning of tubes, boats and associated hardware used in the chemical vapor deposition growth of silicon nitride, polycrystalline silicon, tungsten or titanium silicide or other refractory metals or their silicides may be performed without the assistance of a plasma.
Significantly, it has been found that nitrogen trifluoride etching, unlike conventional wet etch techniques, presents little or no attack on any quartz hardware. Typical levels of nitrogen trifluoride attack on the quartz hardware have been found to be 5-10 A/min. This significant reduction in the degree of attack on the quartz hardware, as compared to the conventional wet etch techniques, serves to extend the useful life of the hardware as well as maintain the critical dimensions of the quartz hardware. More significantly, perhaps, nitrogen trifluoride cleaning of the deposition chamber tube generates fewer foreign particles which results in a cleaner film growth onto the wafer substrate during a deposition run.
According to a preferred embodiment of the present invention there is provided a method of cleaning tubes, boats and associated quartz hardware used in chemical vapor deposition. According to this method after a deposition run nitrogen trifluoride is introduced into an evacuated chemical vapor deposition reaction tube at a temperature exceeding 350 C. All quartz hardware required to grow a film of silicon nitride or polycrystalline silicon may also be loaded into the reaction tube. The reaction tube is back-filled to a pressure of 300-600 Torr and allowed to soak for a period of time sufficient to clean the tube and any quartz hardware introduced into the tube. Residual nitrogen trifluoride gases are removed from the reaction tube by purging the tube with nitrogen.After purging, the reaction tube may be opened, the cleaned quartz hardware removed and the reactor may be made ready for the next deposition run.
EXAMPLE 1
A quartz boat having 5-6 microns silicon nitride and polycrystalline silicon was placed into a very dirty chemical vapor deposition tube at 380 C. The tube was evacuated to 0.00 Torr and backfilled with NF3 to 400 Torr and allowed to soak for fifteen minutes. The tube was then pumped to base, purged with N2 and backfilled with nitrogen. The boat was removed from the reactor and visual inspection revealed that it was totally clean except for some cobweb-like film.
This web-like film was believed to be some unetchable oxide. The etch rate was found to be about 85 A/min.
EXAMPLE 2
Silicon oxide semiconductor wafers having approximately a 2 micron layer of polycrystalline silicon were placed into the chemical vapor deposition reactor. The same procedures were followed as in Example 1. Again the polycrystalline silicon was removed down to the silicon oxide layer of the wafer substrate. The substrate was attacked only where there were pinholes in the silicon oxide or where the oxide was thought to be non-existent under the polycrystalline silicon. The etch rate was found to be about 500 Admin.
EXAMPLE 3
The same procedures as in Examples 2 and 3 above, were followed except that both the temperature was varied between 3800C and the 5000C and the pressure was varied between 200 and 600 Torr. Visual inspection of the substrates and apparatus tested revealed that almost all of the silicon nitride or polycrystalline silicon had been cleaned. The etch rates were found to vary exponentially with increased temperature and pressure.The etch rates were as follows:
Silicon Nitride
Temperature Pressure Etch Rate ( C) (Torr) (A/min)
380 200 23
380 400 85
380 600 165
425 200 155
425 400 662
425 600 1275
500 200 430
500 400 1840
500 600 4675
Polycrystalline Silicon
Temperature Pressure Etch Rate ( C) (Torr) (A/min)
380 200 320
380 400 490
380 600 1550
425 200 1600
425 400 5500
425 600 15000
500 200 1800
500 400 13000
500 600 57000
The chemical reactions of the present invention proceed substantially as follows:: > 350 C 2 NF3 ------ > NF2~NF2+F2 F2+Si N -------------- > 2 F2+Si --- > SiF4t SiF,r It is important to note that both nitrogen trifluoride and its by-product N2F4 are highly toxic and explosive under pressure or upon contact with reducing agents. However, since they would be used at reduced pressure and/or at low concentrations, this should not be considered a problem with the present invention.
There is, therefore, provided a new etchant gas and method of in-situ cleaning of chemical vapor deposition tubes, boats and associated quartz hardware which provides a quick and efficient method of cleaning quartz hardware used in chemical vapor deposition of semiconductor wafers.
While the invention has been particularly shown and described in reference to the preferred embodiments thereof, it will be understood by those skilled in the art that changes in form and details may be made therein without departing from the spirit and scope of the invention. For instance, much lower pressures (and flowing of NF3 continuously) can be used to accomplish the same result, although the etch rates will be somewhat lower than in Example 3.
Claims (54)
1. An etching agent for removing deposited materials from chemical vapor deposition hardware, comprising nitrogen trifluoride.
2. The etching agent according to Claim 1, wherein said deposited material comprises silicon nitride.
3. The etching agent according to Claim 1, wherein said deposited material comprises polycrystalline silicon.
4. The etching agent according to Claim 1, wherein said deposited material comprises a titanium silicide.
5. The etching agent according to Claim 1, wherein said deposited material comprises a tungsten silicide.
6. The etching agent according to Claim 1, wherein said deposited material comprises a refractory metal.
7. The etching agent according to Claim 1, wherein said deposited material comprises a refractory metal silicide.
8. A method of cleaning chemical vapor deposition hardware, comprising the steps of:
providing a chemical vapor deposition reactor having a quartz reactor tube, said reactor tube further having a film of material deposited thereon;
heating said reactor to a temperature sufficient to permit cleaning of said film of material;
evacuating said reactor;
introducing said nitrogen trifluoride into said reactor at a positive pressure and for a sufficient time to permit cleaning of said film of material; and
purging said reactor of said nitrogen trifluoride.
9. The method of cleaning chemical vapor deposition hardware according to Claim 8, wherein said step of providing a chemical vapor deposition reactor further comprises the step of:
introducing boats or other quartz chemical vapor deposition hardware having a film of a material thereon into said reactor.
10. The method of cleaning chemical vapor deposition hardware according to Claim 8, wherein said film of a material further comprises silicon nitride.
11. The method of cleaning chemical vapor deposition hardware according to Claim 8, wherein said film of a material further comprises polycrystalline silicon.
12. The method of cleaning chemical vapor deposition hardware according to Claim 8, wherein said film of a material further comprises titanium silicide.
13. The method of cleaning chemical vapor deposition hardware according to Claim 8, wherein said film of a material further comprises tungsten silicide.
14. The method of cleaning chemical vapor deposition hardware according to Claim 8, wherein said film of a material further comprises a refractory metal.
15. The method of cleaning chemical vapor deposition hardware according to Claim 8, wherein said film of a material further comprises a refractory metal silicide.
16. The method of cleaning chemical vapor deposition hardware according to Claim 9, wherein said film of a material further comprises silicon nitride.
17. The method of cleaning chemical vapor deposition hardware according to Claim 9, wherein said film of a material further comprises polycrystalline silicon.
18. The method of cleaning chemical vapor deposition hardware according to Claim 9, wherein said film of a material further comprises titanium silicide.
19. The method of cleaning chemical vapor deposition hardware according to Claim 9, wherein said film of a material further comprises tungsten silicide.
20. The method of cleaning chemical vapor deposition hardware according to Claim 9, wherein said film of a material further comprises a refractory metal.
21. The method of cleaning chemical vapor deposition hardware according to Claim 9, wherein said film of a material further comprises a refractory metal silicide.
22. The method of cleaning chemical vapor deposition hardware according to Claim 8, wherein said reactor is heated to a temperature no less than about 350 C.
23. The method of cleaning chemical vapor deposition hardware according to Claim 9, wherein said reactor is heated to a temperature no less than about 350 C.
24. The method of cleaning chemical vapor deposition hardware according to Claim 8, wherein said positive pressure is no greater than about 600 Torr.
25. The method of cleaning chemical vapor deposition hardware according to Claim 9, wherein said positive pressure is no greater than about 600 Torr.
26. The method of cleaning chemical vapor deposition hardware according to Claim 8, wherein said reactor is evacuated to about 0.00 Torr.
27. The method of cleaning chemical vapor deposition hardware according to Claim 9, wherein said reactor is evacuated to about 0.00 Torr.
28. The method of cleaning chemical vapor deposition hardware according to Claim 8, wherein said purging step further comprises the steps of:
pumping said reactor to base pressure; purging said reactor with nitrogen gas; and backfilling said reactor with nitrogen gas.
29. The method of cleaning chemical vapor deposition hardware according to Claim 8, wherein said purging step further comprises the steps of:
pumping said reactor to base pressure; purging said reactor with nitrogen gas; and backfilling said reactor with nitrogen gas.
30. A method of cleaning semiconductor wafers, comprising the steps of:
providing a chemical vapor deposition reactor; introducing semiconductor wafers having a film of a material to be cleaned;
heating said reactor to a temperature sufficient to permit cleaning of said film of material;
evacuating said reactor;
introducing nitrogen trifluoride into said reactor at a positive pressure and for a sufficient time to permit cleaning of said film of material; and
purging said reactor of said nitrogen trifluoride.
31. The method of cleaning semiconductor wafers according to Claim 30, wherein said step of providing a chemical vapor deposition reactor further comprises the step of:
introducing boats or other quartz chemical vapor deposition hardware having a film of a material thereon into said reactor;
32. The method of cleaning semiconductor wafers according to Claim 30, wherein said film of a material further comprises silicon nitride.
33. The method of cleaning semiconductor wafers according to Claim 30, wherein said film of a material further comprises polycrystalline silicon.
34. The method of cleaning semiconductor wafers according to Claim 30, wherein said film of a material further comprises titanium silicide.
35. The method of cleaning semiconductor wafers according to Claim 30, wherein said film of a material further comprises tungsten silicide.
36. The method of cleaning semiconductor wafers according to Claim 30, wherein said film of a material further comprises a refractory metal.
37. The method of cleaning semiconductor wafers according to Claim 30, wherein said film of a material further comprises a refractory metal silicide.
38. The method of cleaning semiconductor wafers according to Claim 31, wherein said film of a material further comprises silicon nitride.
39. The method of cleaning semiconductor wafers according to Claim 31, wherein said film of a material further comprises polycrystalline silicon.
40. The method of cleaning semiconductor wafers according to Claim 31, wherein said film of a material further comprises titanium silicide.
41. The method of cleaning semiconductor wafers according to Claim 31, wherein said film of a material further comprises tungsten silicide.
42. The method of cleaning semiconductor wafers according to Claim 31, wherein said film of a material further comprises a refractory metal.
43. The method of cleaning semiconductor wafers according to Claim 31, wherein said film of a material further comprises a refractory metal silicide.
44. The method of cleaning chemical vapor deposition hard according to Claim 30, wherein said reactor is heated to a temperature no less than about 350 C.
45. The method of cleaning semiconductor wafers according to Claim 31, wherein said reactor is heated to a temperature no less than about 350 C.
46. The method of cleaning semiconductor wafers according to Claim 30, wherein said positive pressure is no greater than about 600 Torr.
47. The method of cleaning semiconductor wafers according to Claim 31, wherein said positive pressure is no greater than about 600 Torr.
48. The method of cleaning semiconductor wafers according to Claim 30, wherein said reactor is evacuated to about 0.00 Torr.
49. The method of cleaning semiconductor wafers according to Claim 31, wherein said reactor is evacuated to about 0.00 Torr.
50. The method of cleaning semiconductor wafers according to Claim 30, wherein said purging step further comprises the steps of:
pumping said reactor to base pressure; purging said reactor with nitrogen gas; and backfilling said reactor with nitrogen gas.
51. The method of cleaning semiconductor wafers according to Claim 31, wherein said purging step further comprises the steps of:
pumping said reactor to base pressure; purging said reactor with nitrogen gas; and backfilling said reactor with nitrogen gas.
52. An etching agent substantially as hereinbefore described.
53. The method of cleaning vapor deposition hardware substantially as hereinbefore described with reference to and as illustrated by the examples set forth.
54. The method of cleaning semiconductor wafers substantially as hereinbefore described with reference to and as illustrated by the examples set forth.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80100085A | 1985-11-22 | 1985-11-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB8613285D0 GB8613285D0 (en) | 1986-07-09 |
| GB2183204A true GB2183204A (en) | 1987-06-03 |
Family
ID=25179933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08613285A Withdrawn GB2183204A (en) | 1985-11-22 | 1986-06-02 | Nitrogen trifluoride as an in-situ cleaning agent |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS62127397A (en) |
| DE (1) | DE3625597A1 (en) |
| FR (1) | FR2590507A1 (en) |
| GB (1) | GB2183204A (en) |
| NL (1) | NL8601980A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0437110A3 (en) * | 1990-01-08 | 1994-01-05 | Lsi Logic Corp | |
| US5421957A (en) * | 1993-07-30 | 1995-06-06 | Applied Materials, Inc. | Low temperature etching in cold-wall CVD systems |
| EP0636707A3 (en) * | 1993-07-26 | 1995-07-19 | Air Prod & Chem | Nitrogen trifluoride thermal cleaning apparatus and process. |
| US5714011A (en) * | 1995-02-17 | 1998-02-03 | Air Products And Chemicals Inc. | Diluted nitrogen trifluoride thermal cleaning process |
| US5861065A (en) * | 1997-01-21 | 1999-01-19 | Air Products And Chemicals, Inc. | Nitrogen trifluoride-oxygen thermal cleaning process |
| US5868852A (en) * | 1997-02-18 | 1999-02-09 | Air Products And Chemicals, Inc. | Partial clean fluorine thermal cleaning process |
| KR100786611B1 (en) | 2005-07-08 | 2007-12-21 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | Free radical initiator in remote plasma chamber clean |
| US8278222B2 (en) | 2005-11-22 | 2012-10-02 | Air Products And Chemicals, Inc. | Selective etching and formation of xenon difluoride |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2539917B2 (en) * | 1989-07-10 | 1996-10-02 | セントラル硝子株式会社 | Method for cleaning carbon material with chlorine fluoride gas |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7906996A (en) * | 1979-09-20 | 1981-03-24 | Philips Nv | METHOD FOR CLEANING A REAKTOR. |
| JPS5749220A (en) * | 1980-09-08 | 1982-03-23 | Semiconductor Energy Lab Co Ltd | Plasma gas phase method |
| DE3420347A1 (en) * | 1983-06-01 | 1984-12-06 | Hitachi, Ltd., Tokio/Tokyo | GAS AND METHOD FOR SELECTIVE ETCHING OF SILICON NITRIDE |
-
1986
- 1986-06-02 GB GB08613285A patent/GB2183204A/en not_active Withdrawn
- 1986-07-23 JP JP17353886A patent/JPS62127397A/en active Pending
- 1986-07-29 DE DE19863625597 patent/DE3625597A1/en not_active Ceased
- 1986-08-01 NL NL8601980A patent/NL8601980A/en not_active Application Discontinuation
- 1986-11-20 FR FR8616517A patent/FR2590507A1/en not_active Withdrawn
Non-Patent Citations (2)
| Title |
|---|
| ABSTRACT NO. 108 PAGES 285-287 EXTENDED ABSTRACTS, VOLUME 80-1, THE ELECTROCHEMICAL SOCIETY. * |
| JOURNAL OF THE ELECTROCHEMICAL SOCIETY PAGES 2174 TO 2179, 1981, VOLUME 128 (10) * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0437110A3 (en) * | 1990-01-08 | 1994-01-05 | Lsi Logic Corp | |
| EP0636707A3 (en) * | 1993-07-26 | 1995-07-19 | Air Prod & Chem | Nitrogen trifluoride thermal cleaning apparatus and process. |
| US5797195A (en) * | 1993-07-26 | 1998-08-25 | Air Products And Chemicals, Inc. | Nitrogen trifluoride thermal cleaning apparatus and process |
| US5421957A (en) * | 1993-07-30 | 1995-06-06 | Applied Materials, Inc. | Low temperature etching in cold-wall CVD systems |
| EP0638923A3 (en) * | 1993-07-30 | 1995-11-08 | Applied Materials Inc | Low-temperature cleaning of CVD devices with cold walls. |
| EP0857796A3 (en) * | 1993-07-30 | 1998-10-21 | Applied Materials, Inc. | Apparatus for the low temperature etching of cold-wall CVD reactors |
| US5714011A (en) * | 1995-02-17 | 1998-02-03 | Air Products And Chemicals Inc. | Diluted nitrogen trifluoride thermal cleaning process |
| US5861065A (en) * | 1997-01-21 | 1999-01-19 | Air Products And Chemicals, Inc. | Nitrogen trifluoride-oxygen thermal cleaning process |
| US5868852A (en) * | 1997-02-18 | 1999-02-09 | Air Products And Chemicals, Inc. | Partial clean fluorine thermal cleaning process |
| KR100786611B1 (en) | 2005-07-08 | 2007-12-21 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | Free radical initiator in remote plasma chamber clean |
| US8278222B2 (en) | 2005-11-22 | 2012-10-02 | Air Products And Chemicals, Inc. | Selective etching and formation of xenon difluoride |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62127397A (en) | 1987-06-09 |
| FR2590507A1 (en) | 1987-05-29 |
| NL8601980A (en) | 1987-06-16 |
| GB8613285D0 (en) | 1986-07-09 |
| DE3625597A1 (en) | 1987-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0638923B1 (en) | Low temperature etching in cold-wall CVD systems | |
| CA1235630A (en) | Etching techniques | |
| JP4669605B2 (en) | Cleaning method for semiconductor manufacturing equipment | |
| EP1394842B1 (en) | Thin film forming apparatus cleaning method | |
| KR0137841B1 (en) | How to remove etch residue | |
| US5380370A (en) | Method of cleaning reaction tube | |
| JPH04245627A (en) | Cleaning method of processing vessel | |
| US20060090773A1 (en) | Sulfur hexafluoride remote plasma source clean | |
| US6709608B2 (en) | Semiconductor processing component | |
| GB2183204A (en) | Nitrogen trifluoride as an in-situ cleaning agent | |
| US5868852A (en) | Partial clean fluorine thermal cleaning process | |
| JP2618817B2 (en) | Non-plasma cleaning method in semiconductor manufacturing equipment | |
| JPH04157161A (en) | Cleaning method | |
| US6360754B2 (en) | Method of protecting quartz hardware from etching during plasma-enhanced cleaning of a semiconductor processing chamber | |
| JPH07100865B2 (en) | Cleaning method of low pressure CVD processing apparatus | |
| US5069724A (en) | Method of cleaning carbon member contaminated with inorganic deposits | |
| US5023206A (en) | Semiconductor device with adjacent non-oxide layers and the fabrication thereof | |
| JP3058909B2 (en) | Cleaning method | |
| JPH04333570A (en) | Method for cleaning silicon nitiride with gaseous hf | |
| US6539953B2 (en) | Method and apparatus for cleaning a heater bellow in a chemical vapor deposition chamber | |
| JPH0529285A (en) | Cleaning method and semiconductor manufacturing apparatus | |
| JP2836891B2 (en) | Cleaning method of SiOx with chlorine fluoride gas | |
| JP3468412B2 (en) | Cleaning gas | |
| JP3183846B2 (en) | Cleaning gas and etching gas | |
| Ren et al. | Oxide Removal on Silicon by Rapid Thermal Processing Using SiH2CI2 and H2 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |