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GB201605121D0 - Process - Google Patents

Process

Info

Publication number
GB201605121D0
GB201605121D0 GBGB1605121.1A GB201605121A GB201605121D0 GB 201605121 D0 GB201605121 D0 GB 201605121D0 GB 201605121 A GB201605121 A GB 201605121A GB 201605121 D0 GB201605121 D0 GB 201605121D0
Authority
GB
United Kingdom
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB1605121.1A
Other versions
GB2548628A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford University Innovation Ltd
Original Assignee
Oxford University Innovation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford University Innovation Ltd filed Critical Oxford University Innovation Ltd
Priority to GB1605121.1A priority Critical patent/GB2548628A/en
Publication of GB201605121D0 publication Critical patent/GB201605121D0/en
Publication of GB2548628A publication Critical patent/GB2548628A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
GB1605121.1A 2016-03-24 2016-03-24 Process Withdrawn GB2548628A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1605121.1A GB2548628A (en) 2016-03-24 2016-03-24 Process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1605121.1A GB2548628A (en) 2016-03-24 2016-03-24 Process

Publications (2)

Publication Number Publication Date
GB201605121D0 true GB201605121D0 (en) 2016-05-11
GB2548628A GB2548628A (en) 2017-09-27

Family

ID=56027415

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1605121.1A Withdrawn GB2548628A (en) 2016-03-24 2016-03-24 Process

Country Status (1)

Country Link
GB (1) GB2548628A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109891601A (en) * 2016-09-02 2019-06-14 南洋理工大学 Sulfide film, the device including it and the method that forms the film
CN112795898A (en) * 2020-12-29 2021-05-14 杭州电子科技大学 A kind of preparation method of boron and nitrogen co-doped tungsten disulfide thin film
CN113046692A (en) * 2021-03-17 2021-06-29 四川大学 Preparation method of single-crystal tungsten diselenide monolayer film
CN113106544A (en) * 2021-04-12 2021-07-13 东北师范大学 Method for preparing large-size high-quality two-dimensional TMDS single crystal and film
CN113789574A (en) * 2021-09-03 2021-12-14 中国科学院重庆绿色智能技术研究院 Method for doping rare earth material in two-dimensional material CVD growth
CN114108099A (en) * 2021-12-02 2022-03-01 中国电子科技集团公司第四十六研究所 Method for regulating and controlling crystal orientation of tungsten disulfide on sapphire substrate
CN115074695A (en) * 2021-03-15 2022-09-20 浙江大学 Novel two-dimensional CrX 2 Method for producing a material
CN115094400A (en) * 2022-06-28 2022-09-23 瑞砻科技股份有限公司 Two-dimensional semiconductor material chemical vapor deposition method and device
CN115161615A (en) * 2022-08-19 2022-10-11 山东云海国创云计算装备产业创新中心有限公司 Preparation method of two-dimensional molybdenum-tungsten sulfide alloy film
CN116259677A (en) * 2022-12-20 2023-06-13 江西师范大学 Polarized photodetection device based on vacancy defect two-dimensional material and its preparation method
CN119753623A (en) * 2024-01-08 2025-04-04 南京理工大学 Method for preparing single-layer MoS2 thin film with large crystal domain size on amorphous SiO2 substrate

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108286042A (en) * 2018-03-19 2018-07-17 西北大学 A kind of number of plies is uniformly and the preparation method of high quality molybdenum disulfide film
CN109115764B (en) * 2018-07-30 2021-06-15 深圳瑞达生物股份有限公司 Environment-friendly urine hydroxybenzene derivative detection reagent and preparation method thereof
CN109371381B (en) * 2018-11-29 2021-01-15 河北工业大学 Method for preparing single-layer molybdenum sulfide/tungsten sulfide in-plane heterojunction by low-temperature one-step method
CN110747448B (en) * 2019-11-04 2020-11-03 江南大学 A method for growing NbSx thin films by atomic layer deposition
CN111514909B (en) * 2020-03-27 2022-10-14 电子科技大学 Two-dimensional material VSe with different defect degrees 2 Preparation method of (1)
CN111850509A (en) * 2020-07-28 2020-10-30 江南大学 A method for preparing transition metal chalcogenide planar heterojunction by in-situ control method
CN112501555A (en) * 2020-11-19 2021-03-16 南京大学 Preparation method of single-layer molybdenum disulfide film

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006156886A (en) * 2004-12-01 2006-06-15 Renesas Technology Corp Semiconductor integrated circuit device and manufacturing method thereof
KR101458953B1 (en) * 2007-10-11 2014-11-07 삼성전자주식회사 Method of forming phase change material layer using Ge(Ⅱ) source, and method of fabricating phase change memory device
KR20100099581A (en) * 2009-03-03 2010-09-13 삼성전자주식회사 Method of forming phase change material layer

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109891601A (en) * 2016-09-02 2019-06-14 南洋理工大学 Sulfide film, the device including it and the method that forms the film
CN112795898A (en) * 2020-12-29 2021-05-14 杭州电子科技大学 A kind of preparation method of boron and nitrogen co-doped tungsten disulfide thin film
CN115074695A (en) * 2021-03-15 2022-09-20 浙江大学 Novel two-dimensional CrX 2 Method for producing a material
CN113046692A (en) * 2021-03-17 2021-06-29 四川大学 Preparation method of single-crystal tungsten diselenide monolayer film
CN113106544A (en) * 2021-04-12 2021-07-13 东北师范大学 Method for preparing large-size high-quality two-dimensional TMDS single crystal and film
CN113789574A (en) * 2021-09-03 2021-12-14 中国科学院重庆绿色智能技术研究院 Method for doping rare earth material in two-dimensional material CVD growth
CN113789574B (en) * 2021-09-03 2022-08-09 中国科学院重庆绿色智能技术研究院 Method for doping rare earth material in two-dimensional material CVD growth
CN114108099A (en) * 2021-12-02 2022-03-01 中国电子科技集团公司第四十六研究所 Method for regulating and controlling crystal orientation of tungsten disulfide on sapphire substrate
CN115094400A (en) * 2022-06-28 2022-09-23 瑞砻科技股份有限公司 Two-dimensional semiconductor material chemical vapor deposition method and device
CN115161615A (en) * 2022-08-19 2022-10-11 山东云海国创云计算装备产业创新中心有限公司 Preparation method of two-dimensional molybdenum-tungsten sulfide alloy film
CN116259677A (en) * 2022-12-20 2023-06-13 江西师范大学 Polarized photodetection device based on vacancy defect two-dimensional material and its preparation method
CN119753623A (en) * 2024-01-08 2025-04-04 南京理工大学 Method for preparing single-layer MoS2 thin film with large crystal domain size on amorphous SiO2 substrate

Also Published As

Publication number Publication date
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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)