GB201408946D0 - Low voltage dielectric - Google Patents
Low voltage dielectricInfo
- Publication number
- GB201408946D0 GB201408946D0 GBGB1408946.0A GB201408946A GB201408946D0 GB 201408946 D0 GB201408946 D0 GB 201408946D0 GB 201408946 A GB201408946 A GB 201408946A GB 201408946 D0 GB201408946 D0 GB 201408946D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- low voltage
- voltage dielectric
- dielectric
- low
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Thin Film Transistor (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1408946.0A GB201408946D0 (en) | 2014-05-20 | 2014-05-20 | Low voltage dielectric |
| PCT/GB2015/051478 WO2015177541A1 (en) | 2014-05-20 | 2015-05-20 | Dielectric materials for low voltage ofet operation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1408946.0A GB201408946D0 (en) | 2014-05-20 | 2014-05-20 | Low voltage dielectric |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB201408946D0 true GB201408946D0 (en) | 2014-07-02 |
Family
ID=51135149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB1408946.0A Ceased GB201408946D0 (en) | 2014-05-20 | 2014-05-20 | Low voltage dielectric |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB201408946D0 (en) |
| WO (1) | WO2015177541A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109256466A (en) * | 2018-08-16 | 2019-01-22 | 肇庆市华师大光电产业研究院 | A kind of memory device and preparation method thereof for the flexible organic non-volatile that the low-voltage high speed based on muscovite mica substrate is erasable |
| CN114730845A (en) | 2019-05-10 | 2022-07-08 | 康宁股份有限公司 | Low voltage operation double grid organic thin film transistor and its manufacturing method |
| CN113571638B (en) | 2021-09-23 | 2021-12-28 | 天津大学 | A method for enhancing the stability of the aggregate state of organic semiconductor thin films |
| CN114181565A (en) * | 2021-10-21 | 2022-03-15 | 嘉兴聚鑫隆科技有限公司 | Piezoelectric substrate for flexible sensor and manufacturing process thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200737520A (en) * | 2006-03-17 | 2007-10-01 | Univ Nat Chiao Tung | Gate dielectric structure and an organic thin film transistor based thereon |
| KR20100103623A (en) * | 2007-12-27 | 2010-09-27 | 소니 주식회사 | Thin film semiconductor device and field effect transistor |
| US9766199B2 (en) * | 2012-03-06 | 2017-09-19 | Life Science Biosensor Diagnostics Pty. Ltd. | Organic thin film transistors and the use thereof in sensing applications |
-
2014
- 2014-05-20 GB GBGB1408946.0A patent/GB201408946D0/en not_active Ceased
-
2015
- 2015-05-20 WO PCT/GB2015/051478 patent/WO2015177541A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015177541A1 (en) | 2015-11-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AT | Applications terminated before publication under section 16(1) |