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GB201207766D0 - Dielectric capacitor - Google Patents

Dielectric capacitor

Info

Publication number
GB201207766D0
GB201207766D0 GBGB1207766.5A GB201207766A GB201207766D0 GB 201207766 D0 GB201207766 D0 GB 201207766D0 GB 201207766 A GB201207766 A GB 201207766A GB 201207766 D0 GB201207766 D0 GB 201207766D0
Authority
GB
United Kingdom
Prior art keywords
electrode
dielectric layer
dielectric
coated onto
structured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1207766.5A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dyson Technology Ltd
Original Assignee
Dyson Technology Ltd
University of Oxford
University of Cambridge
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dyson Technology Ltd, University of Oxford, University of Cambridge filed Critical Dyson Technology Ltd
Priority to GBGB1207766.5A priority Critical patent/GB201207766D0/en
Publication of GB201207766D0 publication Critical patent/GB201207766D0/en
Priority to PCT/GB2013/051048 priority patent/WO2013164576A1/en
Priority to GB1307443.0A priority patent/GB2501823B8/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A method of manufacturing a dielectric capacitor comprising providing a first electrode having a structured surface, a dielectric layer coated onto the first electrode, and a second electrode coated onto the dielectric layer; where the structured surface comprises a random array of tubes, wires or rods which extend from the substrate surface, and where the dielectric layer is deposited by atomic layer deposition. Also disclosed is a dielectric capacitor comprising a structured electrode of randomly arranged carbon nanotubes extending from a substrate surface; a dielectric layer coated onto the structured electrode; and a second electrode coated onto the dielectric layer. The structured surface may have a spacing to length ratio with a maximum of 1:30. The dielectric layer may comprise one or more of hafnium oxide, titanium dioxide, barium titanate. The second electrode may be aluminium, titanium nitride, platinum, ruffinium or galinstan. The dielectric coating may be provided as a two layer coating, the first coating provided by plasma-enhanced atomic layer deposition and a second by thermal atomic layer deposition.
GBGB1207766.5A 2012-05-03 2012-05-03 Dielectric capacitor Ceased GB201207766D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GBGB1207766.5A GB201207766D0 (en) 2012-05-03 2012-05-03 Dielectric capacitor
PCT/GB2013/051048 WO2013164576A1 (en) 2012-05-03 2013-04-25 Dielectric capacitor
GB1307443.0A GB2501823B8 (en) 2012-05-03 2013-04-25 Dielectric Capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1207766.5A GB201207766D0 (en) 2012-05-03 2012-05-03 Dielectric capacitor

Publications (1)

Publication Number Publication Date
GB201207766D0 true GB201207766D0 (en) 2012-06-13

Family

ID=46330749

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB1207766.5A Ceased GB201207766D0 (en) 2012-05-03 2012-05-03 Dielectric capacitor
GB1307443.0A Active GB2501823B8 (en) 2012-05-03 2013-04-25 Dielectric Capacitor

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1307443.0A Active GB2501823B8 (en) 2012-05-03 2013-04-25 Dielectric Capacitor

Country Status (2)

Country Link
GB (2) GB201207766D0 (en)
WO (1) WO2013164576A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9349789B1 (en) 2014-12-09 2016-05-24 International Business Machines Corporation Coaxial carbon nanotube capacitor for eDRAM

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911373B2 (en) * 2002-09-20 2005-06-28 Intel Corporation Ultra-high capacitance device based on nanostructures
US20050167655A1 (en) * 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same
WO2005094440A2 (en) * 2004-03-18 2005-10-13 Nanosys Inc. Nanofiber surface based capacitors
CN101573772B (en) * 2006-10-04 2011-10-05 Nxp股份有限公司 MIM capacitor
US8424177B2 (en) * 2006-10-04 2013-04-23 Stmicroelectronics (Crolles 2) Sas MIM capacitor with enhanced capacitance
JP2011522394A (en) * 2007-12-31 2011-07-28 エータモタ・コーポレイション End contact type vertical carbon nanotube transistor
US8603195B2 (en) * 2009-08-24 2013-12-10 Applied Materials, Inc. 3D approach on battery and supercapitor fabrication by initiation chemical vapor deposition techniques
US8405189B1 (en) * 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
CA2712051A1 (en) * 2010-08-12 2012-02-12 The Governors Of The University Of Alberta Method of fabricating a carbon nanotube array

Also Published As

Publication number Publication date
GB2501823B8 (en) 2022-08-03
WO2013164576A1 (en) 2013-11-07
GB2501823A8 (en) 2022-08-03
GB201307443D0 (en) 2013-06-05
GB2501823B (en) 2016-04-20
GB2501823A (en) 2013-11-06
GB2501823C (en) 2016-08-10

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Legal Events

Date Code Title Description
COOA Change in applicant's name or ownership of the application

Owner name: DYSON TECHNOLOGY LIMITED

Free format text: FORMER OWNERS: DYSON TECHNOLOGY LIMITED;THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE,

AT Applications terminated before publication under section 16(1)