GB1307036A - Doping of silicon or germanium crystals with antimony and or bismuth - Google Patents
Doping of silicon or germanium crystals with antimony and or bismuthInfo
- Publication number
- GB1307036A GB1307036A GB1434971*[A GB1434971A GB1307036A GB 1307036 A GB1307036 A GB 1307036A GB 1434971 A GB1434971 A GB 1434971A GB 1307036 A GB1307036 A GB 1307036A
- Authority
- GB
- United Kingdom
- Prior art keywords
- bismuth
- antimony
- silicon
- doping
- bir
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052787 antimony Inorganic materials 0.000 title abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052797 bismuth Inorganic materials 0.000 title abstract 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052732 germanium Inorganic materials 0.000 title abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 title 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 150000001463 antimony compounds Chemical class 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 125000003118 aryl group Chemical group 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 150000001622 bismuth compounds Chemical class 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
1307036 Diffusion into semi-conductors SIEMENS AG 11 May 1971 [15 May 1970] 14349/71 Heading H1K Silicon or germanium wafers are doped with antimony and/or bismuth by a process in which an antimony compound and/or a bismuth compound is/are volatilized into a nitrogen or argon carrier stream and this is mixed immediately adjacent the inlet to the monozone diffusion furnace with a stream of oxidizing gas (oxygen), the mixture being passed over the heated wafers. The dopant compounds are chosen from SbR 3 , SbR 5 , BiR 3 , and BiR 5 where R is alkyl or aryl; such compounds where at least some R are halogen-substituted or are replaced by halogen; (SiH 3 ) 3 Sb; and (CH 3 ) 2 Sb.O.Sb(CH 3 ) 2 .
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702023992 DE2023992A1 (en) | 1970-05-15 | 1970-05-15 | Process for doping silicon or germanium crystals with antimony and / or bismuth in a single-zone furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1307036A true GB1307036A (en) | 1973-02-14 |
Family
ID=5771282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1434971*[A Expired GB1307036A (en) | 1970-05-15 | 1971-05-11 | Doping of silicon or germanium crystals with antimony and or bismuth |
Country Status (5)
| Country | Link |
|---|---|
| AT (1) | AT311300B (en) |
| DE (1) | DE2023992A1 (en) |
| FR (1) | FR2091612A5 (en) |
| GB (1) | GB1307036A (en) |
| NL (1) | NL7105407A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002065508A3 (en) * | 2001-02-12 | 2003-09-25 | Asm Inc | Dopant precursors and processes |
-
1970
- 1970-05-15 DE DE19702023992 patent/DE2023992A1/en active Pending
-
1971
- 1971-04-21 NL NL7105407A patent/NL7105407A/xx unknown
- 1971-04-29 AT AT370871A patent/AT311300B/en not_active IP Right Cessation
- 1971-05-11 GB GB1434971*[A patent/GB1307036A/en not_active Expired
- 1971-05-14 FR FR7117479A patent/FR2091612A5/fr not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002065508A3 (en) * | 2001-02-12 | 2003-09-25 | Asm Inc | Dopant precursors and processes |
| US6716713B2 (en) | 2001-02-12 | 2004-04-06 | Asm America, Inc. | Dopant precursors and ion implantation processes |
| US6716751B2 (en) | 2001-02-12 | 2004-04-06 | Asm America, Inc. | Dopant precursors and processes |
| US6743738B2 (en) | 2001-02-12 | 2004-06-01 | Asm America, Inc. | Dopant precursors and processes |
| US7893433B2 (en) | 2001-02-12 | 2011-02-22 | Asm America, Inc. | Thin films and methods of making them |
| US8067297B2 (en) | 2001-02-12 | 2011-11-29 | Asm America, Inc. | Process for deposition of semiconductor films |
| US8360001B2 (en) | 2001-02-12 | 2013-01-29 | Asm America, Inc. | Process for deposition of semiconductor films |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2023992A1 (en) | 1971-12-02 |
| AT311300B (en) | 1973-11-12 |
| FR2091612A5 (en) | 1972-01-14 |
| NL7105407A (en) | 1971-11-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2957789A (en) | Semiconductor devices and methods of preparing the same | |
| GB1276012A (en) | Methods of producing antimony-containing layers on semiconductor bodies | |
| GB1100780A (en) | Improvements in or relating to the diffusion of doping substances into semiconductor crystals | |
| GB923801A (en) | Improvements in methods of producing semi-conductor arrangements | |
| US3242018A (en) | Semiconductor device and method of producing it | |
| GB1377699A (en) | Method of making a semiconductor device and a semiconductor device when made thereby | |
| IE841412L (en) | Porous semiconductor dopant carriers | |
| GB1134964A (en) | Improvements in or relating to the production of layers of a silicon or germanium nitrogen compound on semiconductor crystals | |
| GB1307036A (en) | Doping of silicon or germanium crystals with antimony and or bismuth | |
| GB1001960A (en) | ||
| GB1397684A (en) | Diffusion of impurity into semiconductor material | |
| GB1132491A (en) | Improvements in or relating to the manufacture of semiconductor systems | |
| GB1455949A (en) | Semiconductor devices cutting out a part from sheet metal by means of oxy | |
| GB915165A (en) | Semiconductors | |
| DE3478125D1 (en) | Novel arsenate dopant compounds | |
| GB1331820A (en) | Impurity doping of semi-conductor substrate | |
| GB1194017A (en) | Improvements in and relating to Methods of Manufacturing Semiconductor Devices | |
| GB1194407A (en) | Brominated Siloxanes and their preparation | |
| GB1237952A (en) | ||
| GB1253765A (en) | Improvements in or relating to the doping of silicon or germanium crystals with antimony and/or bismuth | |
| JPS5527612A (en) | Silicon base | |
| Frosch et al. | Diffusion control in silicon by carrier gas composition | |
| GB1356591A (en) | Coating of semiconductor crystals | |
| GB1135111A (en) | Improvements in or relating to the manufacture of layers of silicon | |
| Yoshida et al. | Numerical solutions of basic equations of dissociative diffusion |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |