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GB1380143A - - Google Patents

Info

Publication number
GB1380143A
GB1380143A GB1114772A GB1114772A GB1380143A GB 1380143 A GB1380143 A GB 1380143A GB 1114772 A GB1114772 A GB 1114772A GB 1114772 A GB1114772 A GB 1114772A GB 1380143 A GB1380143 A GB 1380143A
Authority
GB
United Kingdom
Prior art keywords
platinum
silicide
march
gold
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1114772A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1380143A publication Critical patent/GB1380143A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

1380143 Carrier lifetime in integrated circuits COMMISSARIAT A L'ENERGIE ATOMIQUE 9 March 1972 [9 March 1971] 11147/72 Heading H1K Silicon islands insulated from the substrate in which they are formed are diffused with a metal, leading to reduced charge carrier lifetime. In the part-structure shown an NPN transistor is formed by diffusions through an apertured silica masking layer 5 and the top surface is then coated with platinum by cathode sputtering and the structure then heated at 500‹ C. for up to 1 hour to form platinum silicide 12 in the contact apertures. The remaining free platinum is etched away with aqua regia and the structure heated at 950-1000‹ C. for a few minutes to diffuse platinum throughout the island. A ontact metal such as molybdenum, gold, titanium, platinum, or aluminium is then applied to the silicide areas. Beam leads may be formed by successive deposition on the silicide and silica of titanium, platinum, gold, and solder. The structure may be bonded by its beam leads to a ceramic substrate.
GB1114772A 1971-03-09 1972-03-09 Expired GB1380143A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7108025A FR2128164B1 (en) 1971-03-09 1971-03-09

Publications (1)

Publication Number Publication Date
GB1380143A true GB1380143A (en) 1975-01-08

Family

ID=9073164

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1114772A Expired GB1380143A (en) 1971-03-09 1972-03-09

Country Status (4)

Country Link
BE (1) BE780423A (en)
FR (1) FR2128164B1 (en)
GB (1) GB1380143A (en)
IT (1) IT952930B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
DE69421606T2 (en) * 1994-03-30 2000-05-31 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Process for the production of bipolar transistors with controlled storage time

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590471A (en) * 1969-02-04 1971-07-06 Bell Telephone Labor Inc Fabrication of insulated gate field-effect transistors involving ion implantation

Also Published As

Publication number Publication date
BE780423A (en) 1972-07-03
FR2128164A1 (en) 1972-10-20
IT952930B (en) 1973-07-30
FR2128164B1 (en) 1973-11-30

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees