[go: up one dir, main page]

GB1358275A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1358275A
GB1358275A GB905071A GB905071A GB1358275A GB 1358275 A GB1358275 A GB 1358275A GB 905071 A GB905071 A GB 905071A GB 905071 A GB905071 A GB 905071A GB 1358275 A GB1358275 A GB 1358275A
Authority
GB
United Kingdom
Prior art keywords
region
layer
junction
regions
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB905071A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB905071A priority Critical patent/GB1358275A/en
Publication of GB1358275A publication Critical patent/GB1358275A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Element Separation (AREA)

Abstract

1358275 Semi-conductor devices FERRANTI Ltd 25 April 1972 [8 April 1971] 9050/71 Heading H1K A semi-conductor diode 10 is formed by epitaxially depositing a N+ layer 12 on a N region 11 in which a P+ region 14 is diffused to define a PN junction 15 extending to surface 13 which is reverse biased during operation. Simultaneously two further P+ regions 16, 16<SP>1</SP> are diffused into region 11 to extend to the surface spacedly from the junction 15. The continuations of P+ regions 14, 16, 16<SP>1</SP> into layer 12 at 17, 18, 18<SP>1</SP> are P-type and the remaining parts of the layer are N+, and the opposite surface 19 is doped to N+ region 20. Contacts 22, 23 applied to regions 14, 19, complete the diode. A passivating layer 24 of SiO 2 is formed during diffusion over the surface extending from PN junction 15, and the surface layer N+ doping discourages reversion to P-type. A high breakdown potential is achieved, which may similarly be obtained in a transistor or SCR with a reverse biased PN junction. The N + region may be within P + region 1 and the N region may be formed by diffusion into the P+ region, while the further P+ regions may be diffused into the N+ region. The N+ region may be diffused instead of epitaxially deposited.
GB905071A 1972-04-25 1972-04-25 Semiconductor devices Expired GB1358275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB905071A GB1358275A (en) 1972-04-25 1972-04-25 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB905071A GB1358275A (en) 1972-04-25 1972-04-25 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB1358275A true GB1358275A (en) 1974-07-03

Family

ID=9864440

Family Applications (1)

Application Number Title Priority Date Filing Date
GB905071A Expired GB1358275A (en) 1972-04-25 1972-04-25 Semiconductor devices

Country Status (1)

Country Link
GB (1) GB1358275A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0067393A1 (en) * 1981-06-05 1982-12-22 Nec Corporation Semiconductor device having a resistor region with an enhanced breakdown voltage
US4998155A (en) * 1983-07-11 1991-03-05 Director-General Of The Agency Of Industrial Science And Technology Radiation-hardened semiconductor device with surface layer
WO1999056319A1 (en) * 1998-04-23 1999-11-04 Siemens Aktiengesellschaft High voltage flange for semiconductor component
US5994754A (en) * 1997-01-06 1999-11-30 Nissan Motor Co., Ltd. Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0067393A1 (en) * 1981-06-05 1982-12-22 Nec Corporation Semiconductor device having a resistor region with an enhanced breakdown voltage
US4998155A (en) * 1983-07-11 1991-03-05 Director-General Of The Agency Of Industrial Science And Technology Radiation-hardened semiconductor device with surface layer
US5994754A (en) * 1997-01-06 1999-11-30 Nissan Motor Co., Ltd. Semiconductor device
WO1999056319A1 (en) * 1998-04-23 1999-11-04 Siemens Aktiengesellschaft High voltage flange for semiconductor component

Similar Documents

Publication Publication Date Title
GB1507061A (en) Semiconductors
GB1520921A (en) Semiconductor devices
GB1105177A (en) Improvements in semiconductor devices
GB1396896A (en) Semiconductor devices including field effect and bipolar transistors
GB1229776A (en)
GB988902A (en) Semiconductor devices and methods of making same
GB1012123A (en) Improvements in or relating to semiconductor devices
GB1518984A (en) Integrated circuit
GB1312802A (en) Field effect transistor
GB1109371A (en) Metal-oxide-semiconductor field effect transistor
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1090696A (en) Improvements in or relating to semiconductor devices
GB1303385A (en)
GB1358275A (en) Semiconductor devices
GB1215539A (en) Hybrid junction semiconductor device and method of making the same
GB1215557A (en) A semiconductor photosensitive device
GB1495295A (en) Thyristor combined with monolithically integrated diode and method for producing it
GB1071357A (en) Semiconductor switch
GB1335037A (en) Field effect transistor
JPS5546555A (en) Semiconductor device
JPS5582461A (en) Semiconductor integrated circuit device
JPS5522887A (en) Mis type field effect semiconductor device
JPS5588372A (en) Lateral type transistor
GB1429696A (en)
GB1358510A (en) Enhancement-type complementary mis semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees