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GB1340671A - Process for epitaxially growing semiconductor crystals of predetermined conductivity type - Google Patents

Process for epitaxially growing semiconductor crystals of predetermined conductivity type

Info

Publication number
GB1340671A
GB1340671A GB5957170A GB5957170A GB1340671A GB 1340671 A GB1340671 A GB 1340671A GB 5957170 A GB5957170 A GB 5957170A GB 5957170 A GB5957170 A GB 5957170A GB 1340671 A GB1340671 A GB 1340671A
Authority
GB
United Kingdom
Prior art keywords
elements
bath
conductivity type
proportion
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5957170A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1340671A publication Critical patent/GB1340671A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02417—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02485—Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/063—Gp II-IV-VI compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)

Abstract

1340671 Growing semi-conductor crystals THOMSON-CSF 15 Dec 1970 [17 Dec 1969] 59571/70 Heading C1A [Also in Division B1] An epitaxially grown semi-conductor crystal of predetermined conductivity type is produced by (a) selecting three elements A, B, and C, A and B being from one of the two groups IV and VI of the Periodic Table and C being an element from the other of the two groups, the elements being capable of forming a solid solution A 1-x B x C (where x is the atomic fraction (B)/((A)+(B)), (b) preparing a bath consisting of a liquid mixture of the constituents, the mixture giving rise to a temperature/composition diagram with, as shown in Fig. 3, a stoichiometric line 1 and with a solidus curve 2 intersectingsaid line at a first point 10, the diagram having a liquidus curve 3 defining a second point 20 on the temperature level of said first point, the proportions of the elements being chosen to correspond to a third point 21 on said liquidus curve spaced from said second point 20 in a direction consistent with said predetermined conductivity type, (c) lowering the temperature of the bath from an elevated level to a level of incipient solidification corresponding to said third point, (d) immersing into the bath a substrate of the same crystal structure and that of a solid solution of said constituents, (e) progressively cooling the bath at a controlled rate with growth of a layer of said predetermined conductivity type on said substrate, (f) and terminating the controlled cooling of said bath at a final temperature below the level of incipient solidification with subsequent removal of substrate therefrom. Following termination of controlled cooling and prior to removal of the substrate, the proportion of said constituents may be modified in the bath to reverse the conductivity type with subsequent continuation of controlled cooling and formation of another layer of opposite conductivity type on said substrate. This modification may involve (1) a diminution of proportion of the element C with reference to the combined proportion of the other two elements, with substantially no change in the relative proportion of the other two elements or (2) the maintenance of the original proportion of the element C with reference to the combined proportion of the other two elements, with a change in the relative proportion of said other two elements. Preferably either selenium or tellurium is used as one of the elements and the other two elements of the composition are chosen from lead and tin and/or cadmium, zinc or mercury. As shown in Fig. 5, a substrate 30 of P-type conductivity is covered by an epitaxially grown N-type layer 31 forming therewith a junction 32, the two major faces of the body carrying electrodes represented by metal floatings 33 and 34. In another embodiment (Fig. 6, not shown) layer 31 is overlaid by a further epitaxially grown layer 35 of P-type and (Fig. 7, not shown) the layer 31 is subdivided into a multiplicity of cubic segments by etching through a mask of silicon oxide and the cubes provided on all lateral faces with semireflecting coatings. The semi-conductors may be used as photo-electric sensors, emitters of luminous radiation.
GB5957170A 1969-12-17 1970-12-15 Process for epitaxially growing semiconductor crystals of predetermined conductivity type Expired GB1340671A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6943698A FR2071085A5 (en) 1969-12-17 1969-12-17

Publications (1)

Publication Number Publication Date
GB1340671A true GB1340671A (en) 1973-12-12

Family

ID=9044715

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5957170A Expired GB1340671A (en) 1969-12-17 1970-12-15 Process for epitaxially growing semiconductor crystals of predetermined conductivity type

Country Status (7)

Country Link
US (1) US3718511A (en)
BE (1) BE760375A (en)
DE (1) DE2062041C3 (en)
FR (1) FR2071085A5 (en)
GB (1) GB1340671A (en)
LU (1) LU62262A1 (en)
NL (1) NL7018330A (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925147A (en) * 1971-08-30 1975-12-09 Hughes Aircraft Co Preparation of monocrystalline lead tin telluride
US3770565A (en) * 1972-01-05 1973-11-06 Us Navy Plastic mounting of epitaxially grown iv-vi compound semiconducting films
US3902924A (en) * 1973-08-30 1975-09-02 Honeywell Inc Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof
US4075043A (en) * 1976-09-01 1978-02-21 Rockwell International Corporation Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique
US4273596A (en) * 1978-10-03 1981-06-16 The United States Of America As Represented By The Secretary Of The Army Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager
US4263065A (en) * 1980-03-24 1981-04-21 Rockwell International Corporation Semi-open liquid phase epitaxial growth system
US4315477A (en) * 1980-03-24 1982-02-16 Rockwell International Corporation Semi-open liquid phase epitaxial growth system
JPS575325A (en) * 1980-06-12 1982-01-12 Junichi Nishizawa Semicondoctor p-n junction device and manufacture thereof
US4401487A (en) * 1980-11-14 1983-08-30 Hughes Aircraft Company Liquid phase epitaxy of mercury cadmium telluride layer
US4357620A (en) * 1980-11-18 1982-11-02 The United States Of America As Represented By The Secretary Of The Army Liquid-phase epitaxial growth of cdTe on HgCdTe
US4376663A (en) * 1980-11-18 1983-03-15 The United States Of America As Represented By The Secretary Of The Army Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate
DE3722881C2 (en) * 1987-07-10 1995-02-16 Kernforschungsz Karlsruhe Switch matrix with optically non-linear, e.g. bistable, elements and methods of making the same
EP1039291A1 (en) * 1999-03-26 2000-09-27 Sony International (Europe) GmbH Optochemical sensor and method for its construction
WO2003105197A1 (en) * 2002-06-10 2003-12-18 Ii-Vi Incorporated Radiation detector
JP7518785B2 (en) * 2021-03-08 2024-07-18 株式会社東芝 Photoelectric conversion element and its manufacturing method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1043530A (en) * 1961-12-26 1966-09-21 Minnesota Mining & Mfg Improvements in or relating to thermoelectric devices

Also Published As

Publication number Publication date
BE760375A (en) 1971-05-17
DE2062041B2 (en) 1979-06-21
NL7018330A (en) 1971-06-21
DE2062041A1 (en) 1971-06-24
DE2062041C3 (en) 1980-02-21
US3718511A (en) 1973-02-27
LU62262A1 (en) 1971-05-14
FR2071085A5 (en) 1971-09-17

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee