GB1112765A - Improvements in or relating to semi-conducting ceramic glaze compositions - Google Patents
Improvements in or relating to semi-conducting ceramic glaze compositionsInfo
- Publication number
- GB1112765A GB1112765A GB2322365A GB2322365A GB1112765A GB 1112765 A GB1112765 A GB 1112765A GB 2322365 A GB2322365 A GB 2322365A GB 2322365 A GB2322365 A GB 2322365A GB 1112765 A GB1112765 A GB 1112765A
- Authority
- GB
- United Kingdom
- Prior art keywords
- glaze
- moles
- tin oxide
- oxide
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 title abstract 6
- 239000000919 ceramic Substances 0.000 title abstract 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 5
- 229910001887 tin oxide Inorganic materials 0.000 abstract 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 4
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000007598 dipping method Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 2
- 239000011787 zinc oxide Substances 0.000 abstract 2
- DPXJVFZANSGRMM-UHFFFAOYSA-N acetic acid;2,3,4,5,6-pentahydroxyhexanal;sodium Chemical compound [Na].CC(O)=O.OCC(O)C(O)C(O)C(O)C=O DPXJVFZANSGRMM-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 239000011230 binding agent Substances 0.000 abstract 1
- 238000001354 calcination Methods 0.000 abstract 1
- 239000001768 carboxy methyl cellulose Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000615 nonconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 235000019812 sodium carboxymethyl cellulose Nutrition 0.000 abstract 1
- 229920001027 sodium carboxymethylcellulose Polymers 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/002—Inhomogeneous material in general
- H01B3/004—Inhomogeneous material in general with conductive additives or conductive layers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
- H01C17/06546—Oxides of zinc or cadmium
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
Abstract
A semi-conducting ceramic glaze composition composed of a base glaze within which is incorporated "blue tin oxide" and zinc oxide, the amount of blue tin oxide present being within the range 12.5% to 25% by weight of the total composition, and zinc oxide is present in an amount within the range 1-12% by weight of the total composition. Blue tin oxide is prepared by calcining at an appropriate temperature a mixture of tin oxide and antimony pentoxide (Sb2O5), preferably in proportions of between 95-99.5 mole per cent of tin oxide and 0.5-5 mole per cent of Sb2O5. A suitable base glaze has the molar composition: X 0.1-0.35 moles; Al2O3 0.25-0.6 moles; Y 0.9-0.65 moles; BaO3 0-0.2 moles; SiO2 2.5-6.0 moles, X being any oxide or combination of oxides of metals of Group Ia in the Periodic classification, and Y being any oxide or combination of oxides of metals in Group IIa of the Periodic classification. The glaze is used to coat ceramic articles, such as high voltage electrical insulators, for controlling the voltage distribution over the surface of the article. The glaze may be applied by dipping or spraying, careful control of time or volume of glaze being necessary to obtain the correct unfired thickness for producing surface resistivities within the required range. Thickness up to 0.04 inch may be obtained by multiple dipping, the preferred thickness being 0.01-0.02 inch such thicknesses giving a surface resistivity of less than 100 megohms per square. The glaze may contain up to 1% of organic binders such as sodium carboxymethyl cellulose to strengthen the glaze layer. The glaze is fired at temperatures between 1050 DEG and 1250 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2322365A GB1112765A (en) | 1965-06-01 | 1965-06-01 | Improvements in or relating to semi-conducting ceramic glaze compositions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2322365A GB1112765A (en) | 1965-06-01 | 1965-06-01 | Improvements in or relating to semi-conducting ceramic glaze compositions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1112765A true GB1112765A (en) | 1968-05-08 |
Family
ID=10192149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2322365A Expired GB1112765A (en) | 1965-06-01 | 1965-06-01 | Improvements in or relating to semi-conducting ceramic glaze compositions |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1112765A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2064253A1 (en) * | 1969-10-11 | 1971-07-16 | Ngk Insulators Ltd | |
| US4112193A (en) | 1975-11-11 | 1978-09-05 | Nippon Gaishi Kabushiki Kaishi | Electrical insulators |
| FR2421857A1 (en) * | 1978-04-03 | 1979-11-02 | Trw Inc | COMPOSITION FOR ENAMELLED RESISTANCE, ENAMELLED RESISTANCE AND PROCESS FOR MAKING SUCH A RESISTANCE |
| US4232185A (en) | 1977-05-02 | 1980-11-04 | Ngk Insulators, Ltd. | Electrical insulator with semiconductive glaze |
| FR2545259A1 (en) * | 1983-04-29 | 1984-11-02 | Ceraver | ELECTRIC INSULATOR HAVING AN IMPROVED INSENSITIVITY TO POLLUTION |
| WO1998020504A1 (en) * | 1996-11-06 | 1998-05-14 | Ifö Ceramics Aktiebolag | Electric insulator and method for the production of such insulator |
| US6043582A (en) * | 1998-08-19 | 2000-03-28 | General Electric Co. | Stable conductive material for high voltage armature bars |
| CN119977332A (en) * | 2025-04-17 | 2025-05-13 | 苏州工学院 | Environmentally friendly tin-antimony-rare earth composite semiconductor glaze and lead-free low-temperature curing method thereof |
-
1965
- 1965-06-01 GB GB2322365A patent/GB1112765A/en not_active Expired
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2064253A1 (en) * | 1969-10-11 | 1971-07-16 | Ngk Insulators Ltd | |
| US4112193A (en) | 1975-11-11 | 1978-09-05 | Nippon Gaishi Kabushiki Kaishi | Electrical insulators |
| US4232185A (en) | 1977-05-02 | 1980-11-04 | Ngk Insulators, Ltd. | Electrical insulator with semiconductive glaze |
| FR2421857A1 (en) * | 1978-04-03 | 1979-11-02 | Trw Inc | COMPOSITION FOR ENAMELLED RESISTANCE, ENAMELLED RESISTANCE AND PROCESS FOR MAKING SUCH A RESISTANCE |
| FR2545259A1 (en) * | 1983-04-29 | 1984-11-02 | Ceraver | ELECTRIC INSULATOR HAVING AN IMPROVED INSENSITIVITY TO POLLUTION |
| EP0126984A1 (en) * | 1983-04-29 | 1984-12-05 | CERAVER Société anonyme dite: | Electrical insulator having an insensitivity to pollution |
| WO1998020504A1 (en) * | 1996-11-06 | 1998-05-14 | Ifö Ceramics Aktiebolag | Electric insulator and method for the production of such insulator |
| US6043582A (en) * | 1998-08-19 | 2000-03-28 | General Electric Co. | Stable conductive material for high voltage armature bars |
| CN119977332A (en) * | 2025-04-17 | 2025-05-13 | 苏州工学院 | Environmentally friendly tin-antimony-rare earth composite semiconductor glaze and lead-free low-temperature curing method thereof |
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