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GB1011973A - Improvements in or relating to methods of growing crystals of semiconductor materials - Google Patents

Improvements in or relating to methods of growing crystals of semiconductor materials

Info

Publication number
GB1011973A
GB1011973A GB8462A GB8462A GB1011973A GB 1011973 A GB1011973 A GB 1011973A GB 8462 A GB8462 A GB 8462A GB 8462 A GB8462 A GB 8462A GB 1011973 A GB1011973 A GB 1011973A
Authority
GB
United Kingdom
Prior art keywords
crucible
pulling
melt
crystal
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8462A
Inventor
John George Wilkes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Company PLC
Original Assignee
General Electric Company PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Company PLC filed Critical General Electric Company PLC
Priority to GB8462A priority Critical patent/GB1011973A/en
Publication of GB1011973A publication Critical patent/GB1011973A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,011,973. Crystal-pulling. GENERAL ELECTRIC CO. Ltd. March 1, 1963 [Jan. 1, 1962], No. 84/62. Heading BIS. [Also in Division F4] In the production of a single crystal of germanium containing a dopant which is more soluble in liquid germanium than solid germanium by pulling from a melt 26 in a crucible 1, melt 26 being connected by an orifice 2 in crucible 1 to a supply melt 25 in which crucible I floats and which has the same composition as that of the desired doped crystal, pulling is commenced to produce a conical portion 28, additional dopant is then added to crucible 1 via passage 3 in an amount sufficient to ensure subsequent formation of crystallized germanium containing the desired proportion of dopant, and pulling is continued to produce a rod-like portion. The rod-like portion may have a diameter of 75 mm. The temperature of the melt is raised and lowered both at the beginning and end of the conical portion. The rate of pulling is uniformly increased to 0À6 mm./minute during formation of the conical portion and is then maintained constant. The crystal being pulled and the crucible containing supply melt 25 are rotated during pulling except during addition of additional dopant. The crystal may be rotated at 50 r.p.m. and the crucible at 1 r.p.m. Specification 1,013,824 is referred to.
GB8462A 1962-01-01 1962-01-01 Improvements in or relating to methods of growing crystals of semiconductor materials Expired GB1011973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8462A GB1011973A (en) 1962-01-01 1962-01-01 Improvements in or relating to methods of growing crystals of semiconductor materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8462A GB1011973A (en) 1962-01-01 1962-01-01 Improvements in or relating to methods of growing crystals of semiconductor materials

Publications (1)

Publication Number Publication Date
GB1011973A true GB1011973A (en) 1965-12-01

Family

ID=9698138

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8462A Expired GB1011973A (en) 1962-01-01 1962-01-01 Improvements in or relating to methods of growing crystals of semiconductor materials

Country Status (1)

Country Link
GB (1) GB1011973A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607115A (en) * 1969-10-29 1971-09-21 Gen Motors Corp Crystal pulling from molten melts including solute introduction means below the seed-melt interface
US3994690A (en) * 1974-02-15 1976-11-30 Elphiac Universal apparatus for elaborating semiconductive monocrystals
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
US4230674A (en) * 1976-12-27 1980-10-28 Mobil Tyco Solar Energy Corporation Crucible-die assemblies for growing crystalline bodies of selected shapes
US4235848A (en) * 1978-06-15 1980-11-25 Apilat Vitaly Y Apparatus for pulling single crystal from melt on a seed
US5098674A (en) * 1987-12-03 1992-03-24 Toshiba Ceramics Co., Ltd. Powder supply device and method for a single crystal pulling apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607115A (en) * 1969-10-29 1971-09-21 Gen Motors Corp Crystal pulling from molten melts including solute introduction means below the seed-melt interface
US3994690A (en) * 1974-02-15 1976-11-30 Elphiac Universal apparatus for elaborating semiconductive monocrystals
US4230674A (en) * 1976-12-27 1980-10-28 Mobil Tyco Solar Energy Corporation Crucible-die assemblies for growing crystalline bodies of selected shapes
US4235848A (en) * 1978-06-15 1980-11-25 Apilat Vitaly Y Apparatus for pulling single crystal from melt on a seed
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
US5098674A (en) * 1987-12-03 1992-03-24 Toshiba Ceramics Co., Ltd. Powder supply device and method for a single crystal pulling apparatus

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