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GB1068223A - Crystal growing method and apparatus - Google Patents

Crystal growing method and apparatus

Info

Publication number
GB1068223A
GB1068223A GB8986/66A GB898666A GB1068223A GB 1068223 A GB1068223 A GB 1068223A GB 8986/66 A GB8986/66 A GB 8986/66A GB 898666 A GB898666 A GB 898666A GB 1068223 A GB1068223 A GB 1068223A
Authority
GB
United Kingdom
Prior art keywords
crucible
crystal
heating means
melt
pulled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8986/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Elmat Corp
Original Assignee
Elmat Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elmat Corp filed Critical Elmat Corp
Publication of GB1068223A publication Critical patent/GB1068223A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

In a process of crystal-pulling from a crucible surrounded by a heating means, the level of the melt is maintained constant relative by to the heating means as pulling proceeds by lowering the heating means (according to Figs. not shown) or raising the crucible. The crystalpulling and level adjustment are each effected by manual (fast) and automatic (slow) operation. The crystal and melt are additionally rotated in opposite directions. The crystal pulled is of germanium or silicon, the crucible is of quartz, and the heating means is a double graphite helix. The crucible is contained in an inner water-cooled chamber having an inert gas atmosphere and PTFE seals through which pass into an outer chamber the pulled crystal and level adjustment and crucible rotation gear.
GB8986/66A 1965-03-01 1966-03-01 Crystal growing method and apparatus Expired GB1068223A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US435910A US3337303A (en) 1965-03-01 1965-03-01 Crystal growing apparatus

Publications (1)

Publication Number Publication Date
GB1068223A true GB1068223A (en) 1967-05-10

Family

ID=23730327

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8986/66A Expired GB1068223A (en) 1965-03-01 1966-03-01 Crystal growing method and apparatus

Country Status (3)

Country Link
US (1) US3337303A (en)
DE (1) DE1519792A1 (en)
GB (1) GB1068223A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098471A3 (en) * 1982-07-09 1985-05-15 International Business Machines Corporation Method of growing silicon crystals by the czochralski method
CN114606574A (en) * 2022-02-15 2022-06-10 浙江晶阳机电股份有限公司 Economical large-size crystal growth furnace provided with intelligent material taking device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6509041A (en) * 1964-07-16 1966-01-17
BE676042A (en) * 1965-02-10 1966-06-16
US3493770A (en) * 1966-03-01 1970-02-03 Ibm Radiation sensitive control system for crystal growing apparatus
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3494742A (en) * 1968-12-23 1970-02-10 Western Electric Co Apparatus for float zone melting fusible material
US3822111A (en) * 1971-02-25 1974-07-02 Sony Corp Apparatus for pulling up semiconductor crystals
US3865554A (en) * 1971-09-23 1975-02-11 Little Inc A Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
US3953281A (en) * 1974-06-27 1976-04-27 International Business Machines Corporation Method and system for growing monocrystalline ingots
US4242175A (en) * 1978-12-26 1980-12-30 Zumbrunnen Allen D Silicon refining process
JP2678383B2 (en) * 1989-05-30 1997-11-17 信越半導体 株式会社 Device for single crystal
JPH0772116B2 (en) * 1991-02-15 1995-08-02 信越半導体株式会社 Single crystal pulling device
US5288366A (en) * 1992-04-24 1994-02-22 Memc Electronic Materials, Inc. Method for growing multiple single crystals and apparatus for use therein
US5488924A (en) * 1993-12-06 1996-02-06 Memc Electronic Materials Hopper for use in charging semiconductor source material
JP3444178B2 (en) * 1998-02-13 2003-09-08 信越半導体株式会社 Single crystal manufacturing method
JP2005289776A (en) * 2004-04-05 2005-10-20 Canon Inc Crystal manufacturing method and crystal manufacturing apparatus
JP5945971B2 (en) 2013-10-29 2016-07-05 信越半導体株式会社 Silicon single crystal pulling device
KR20230028564A (en) * 2021-12-29 2023-02-28 시안 이에스윈 머티리얼즈 테크놀로지 컴퍼니 리미티드 Thermal field control device and method for single crystal growth

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA629412A (en) * 1961-10-17 Union Carbide Corporation Method of and apparatus for growing single crystal material
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
US2998335A (en) * 1956-02-04 1961-08-29 Telefunken Gmbh Method and apparatusfor growing single crystals from molten bodies
NL235481A (en) * 1958-02-19
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
NL238924A (en) * 1959-05-05
NL255530A (en) * 1959-09-11
US3088853A (en) * 1959-11-17 1963-05-07 Texas Instruments Inc Method of purifying gallium by recrystallization

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098471A3 (en) * 1982-07-09 1985-05-15 International Business Machines Corporation Method of growing silicon crystals by the czochralski method
CN114606574A (en) * 2022-02-15 2022-06-10 浙江晶阳机电股份有限公司 Economical large-size crystal growth furnace provided with intelligent material taking device
CN114606574B (en) * 2022-02-15 2023-04-11 浙江晶阳机电股份有限公司 Economical large-size crystal growth furnace provided with intelligent material taking device

Also Published As

Publication number Publication date
US3337303A (en) 1967-08-22
DE1519792A1 (en) 1971-01-21

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