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GB0621040D0 - CMOS photodiode - Google Patents

CMOS photodiode

Info

Publication number
GB0621040D0
GB0621040D0 GBGB0621040.5A GB0621040A GB0621040D0 GB 0621040 D0 GB0621040 D0 GB 0621040D0 GB 0621040 A GB0621040 A GB 0621040A GB 0621040 D0 GB0621040 D0 GB 0621040D0
Authority
GB
United Kingdom
Prior art keywords
cmos photodiode
photodiode
cmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0621040.5A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Melexis NV
Original Assignee
Melexis NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Melexis NV filed Critical Melexis NV
Priority to GBGB0621040.5A priority Critical patent/GB0621040D0/en
Publication of GB0621040D0 publication Critical patent/GB0621040D0/en
Priority to PCT/IB2007/003239 priority patent/WO2008050231A2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
GBGB0621040.5A 2006-10-23 2006-10-23 CMOS photodiode Ceased GB0621040D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB0621040.5A GB0621040D0 (en) 2006-10-23 2006-10-23 CMOS photodiode
PCT/IB2007/003239 WO2008050231A2 (en) 2006-10-23 2007-10-23 Cmos photodiode for integration in an optical receiver

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0621040.5A GB0621040D0 (en) 2006-10-23 2006-10-23 CMOS photodiode

Publications (1)

Publication Number Publication Date
GB0621040D0 true GB0621040D0 (en) 2006-11-29

Family

ID=37508215

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0621040.5A Ceased GB0621040D0 (en) 2006-10-23 2006-10-23 CMOS photodiode

Country Status (2)

Country Link
GB (1) GB0621040D0 (en)
WO (1) WO2008050231A2 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3413078B2 (en) * 1997-10-06 2003-06-03 キヤノン株式会社 Photoelectric conversion device and contact image sensor
US6218719B1 (en) * 1998-09-18 2001-04-17 Capella Microsystems, Inc. Photodetector and device employing the photodetector for converting an optical signal into an electrical signal
US6593636B1 (en) * 2000-12-05 2003-07-15 Udt Sensors, Inc. High speed silicon photodiodes and method of manufacture
US6597025B2 (en) * 2001-03-15 2003-07-22 Koninklijke Philips Electronics N.V. Light sensitive semiconductor component
JP4824542B2 (en) * 2003-05-08 2011-11-30 ザ サイエンス アンド テクノロジー ファシリティーズ カウンシル electronic microscope
DE102004053077B4 (en) * 2004-11-03 2006-11-02 X-Fab Semiconductor Foundries Ag Vertical PIN photodiode and manufacturing process, compatible with a conventional CMOS process

Also Published As

Publication number Publication date
WO2008050231A3 (en) 2008-09-04
WO2008050231A2 (en) 2008-05-02

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)