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GB0308249D0 - Method of depositing piezoelectric films - Google Patents

Method of depositing piezoelectric films

Info

Publication number
GB0308249D0
GB0308249D0 GBGB0308249.2A GB0308249A GB0308249D0 GB 0308249 D0 GB0308249 D0 GB 0308249D0 GB 0308249 A GB0308249 A GB 0308249A GB 0308249 D0 GB0308249 D0 GB 0308249D0
Authority
GB
United Kingdom
Prior art keywords
piezoelectric films
depositing piezoelectric
depositing
films
piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0308249.2A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trikon Technologies Ltd
Original Assignee
Trikon Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trikon Technologies Ltd filed Critical Trikon Technologies Ltd
Priority to GBGB0308249.2A priority Critical patent/GB0308249D0/en
Publication of GB0308249D0 publication Critical patent/GB0308249D0/en
Priority to DE102004014718A priority patent/DE102004014718A1/en
Priority to GB0407506A priority patent/GB2400490B/en
Priority to US10/817,888 priority patent/US7227292B2/en
Priority to JP2004113316A priority patent/JP2004320759A/en
Priority to JP2010276137A priority patent/JP2011061867A/en
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/027Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414Resonance frequency
    • H03H2003/0421Modification of the thickness of an element
    • H03H2003/0428Modification of the thickness of an element of an electrode
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414Resonance frequency
    • H03H2003/0421Modification of the thickness of an element
    • H03H2003/0435Modification of the thickness of an element of a piezoelectric layer
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414Resonance frequency
    • H03H2003/0478Resonance frequency in a process for mass production

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
GBGB0308249.2A 2003-04-10 2003-04-10 Method of depositing piezoelectric films Ceased GB0308249D0 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GBGB0308249.2A GB0308249D0 (en) 2003-04-10 2003-04-10 Method of depositing piezoelectric films
DE102004014718A DE102004014718A1 (en) 2003-04-10 2004-03-25 Process for the deposition of piezoelectric thin layers
GB0407506A GB2400490B (en) 2003-04-10 2004-04-02 Methods of depositing piezoelectric films
US10/817,888 US7227292B2 (en) 2003-04-10 2004-04-06 Methods of depositing piezoelectric films
JP2004113316A JP2004320759A (en) 2003-04-10 2004-04-07 Layer stack deposition method, resonator formation method, piezoelectric layer deposition method, and resonator
JP2010276137A JP2011061867A (en) 2003-04-10 2010-12-10 Method for stack deposition of layer, method of forming resonator, and method for deposition of piezoelectric layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0308249.2A GB0308249D0 (en) 2003-04-10 2003-04-10 Method of depositing piezoelectric films

Publications (1)

Publication Number Publication Date
GB0308249D0 true GB0308249D0 (en) 2003-05-14

Family

ID=9956522

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0308249.2A Ceased GB0308249D0 (en) 2003-04-10 2003-04-10 Method of depositing piezoelectric films
GB0407506A Expired - Lifetime GB2400490B (en) 2003-04-10 2004-04-02 Methods of depositing piezoelectric films

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0407506A Expired - Lifetime GB2400490B (en) 2003-04-10 2004-04-02 Methods of depositing piezoelectric films

Country Status (3)

Country Link
JP (2) JP2004320759A (en)
DE (1) DE102004014718A1 (en)
GB (2) GB0308249D0 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7543496B2 (en) * 2006-03-27 2009-06-09 Georgia Tech Research Corporation Capacitive bulk acoustic wave disk gyroscopes
WO2011026100A1 (en) 2009-08-31 2011-03-03 Georgia Tech Research Corporation Bulk acoustic wave gyroscope with spoked structure
CN104579233B (en) * 2013-10-23 2018-12-04 中兴通讯股份有限公司 A kind of production method and device of film Resonator
US11401601B2 (en) 2019-09-13 2022-08-02 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4502932A (en) * 1983-10-13 1985-03-05 The United States Of America As Represented By The United States Department Of Energy Acoustic resonator and method of making same
US5864261A (en) * 1994-05-23 1999-01-26 Iowa State University Research Foundation Multiple layer acoustical structures for thin-film resonator based circuits and systems
JPH1064886A (en) * 1996-08-20 1998-03-06 Sony Corp Dry etching apparatus and dry etching method
US6051907A (en) * 1996-10-10 2000-04-18 Nokia Mobile Phones Limited Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS)
JPH10280153A (en) * 1997-04-11 1998-10-20 Toshiba Mach Co Ltd Plasma cvd device
US6329305B1 (en) * 2000-02-11 2001-12-11 Agere Systems Guardian Corp. Method for producing devices having piezoelectric films
US6342134B1 (en) * 2000-02-11 2002-01-29 Agere Systems Guardian Corp. Method for producing piezoelectric films with rotating magnetron sputtering system
JP2002031523A (en) * 2000-05-10 2002-01-31 Rigaku Corp Thin film measuring device, thin film measuring method, and thin film forming system
JP4575586B2 (en) * 2000-12-19 2010-11-04 キヤノンアネルバ株式会社 Deposition equipment
US6518860B2 (en) * 2001-01-05 2003-02-11 Nokia Mobile Phones Ltd BAW filters having different center frequencies on a single substrate and a method for providing same
US6611576B1 (en) * 2001-02-12 2003-08-26 Advanced Micro Devices, Inc. Automated control of metal thickness during film deposition
US6456173B1 (en) * 2001-02-15 2002-09-24 Nokia Mobile Phones Ltd. Method and system for wafer-level tuning of bulk acoustic wave resonators and filters
JP2002350370A (en) * 2001-03-22 2002-12-04 Rigaku Corp X-ray measuring apparatus, system for measuring/forming thin film, and method for measuring/forming thin film
JP3954319B2 (en) * 2001-03-28 2007-08-08 株式会社東芝 Thin film thickness monitoring method and substrate temperature measurement method
US6472954B1 (en) * 2001-04-23 2002-10-29 Agilent Technologies, Inc. Controlled effective coupling coefficients for film bulk acoustic resonators
US6480074B1 (en) * 2001-04-27 2002-11-12 Nokia Mobile Phones Ltd. Method and system for wafer-level tuning of bulk acoustic wave resonators and filters by reducing thickness non-uniformity
US6601276B2 (en) * 2001-05-11 2003-08-05 Agere Systems Inc. Method for self alignment of patterned layers in thin film acoustic devices
JP3984441B2 (en) * 2001-07-26 2007-10-03 松下電器産業株式会社 Piezoelectric thin film vibrator and filter
JP4288914B2 (en) * 2002-08-21 2009-07-01 パナソニック株式会社 Resonant device manufacturing method

Also Published As

Publication number Publication date
JP2004320759A (en) 2004-11-11
GB0407506D0 (en) 2004-05-05
DE102004014718A1 (en) 2004-10-21
GB2400490A (en) 2004-10-13
JP2011061867A (en) 2011-03-24
GB2400490B (en) 2006-06-28

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)