GB0308249D0 - Method of depositing piezoelectric films - Google Patents
Method of depositing piezoelectric filmsInfo
- Publication number
- GB0308249D0 GB0308249D0 GBGB0308249.2A GB0308249A GB0308249D0 GB 0308249 D0 GB0308249 D0 GB 0308249D0 GB 0308249 A GB0308249 A GB 0308249A GB 0308249 D0 GB0308249 D0 GB 0308249D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- piezoelectric films
- depositing piezoelectric
- depositing
- films
- piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000151 deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0478—Resonance frequency in a process for mass production
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0308249.2A GB0308249D0 (en) | 2003-04-10 | 2003-04-10 | Method of depositing piezoelectric films |
| DE102004014718A DE102004014718A1 (en) | 2003-04-10 | 2004-03-25 | Process for the deposition of piezoelectric thin layers |
| GB0407506A GB2400490B (en) | 2003-04-10 | 2004-04-02 | Methods of depositing piezoelectric films |
| US10/817,888 US7227292B2 (en) | 2003-04-10 | 2004-04-06 | Methods of depositing piezoelectric films |
| JP2004113316A JP2004320759A (en) | 2003-04-10 | 2004-04-07 | Layer stack deposition method, resonator formation method, piezoelectric layer deposition method, and resonator |
| JP2010276137A JP2011061867A (en) | 2003-04-10 | 2010-12-10 | Method for stack deposition of layer, method of forming resonator, and method for deposition of piezoelectric layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0308249.2A GB0308249D0 (en) | 2003-04-10 | 2003-04-10 | Method of depositing piezoelectric films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB0308249D0 true GB0308249D0 (en) | 2003-05-14 |
Family
ID=9956522
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB0308249.2A Ceased GB0308249D0 (en) | 2003-04-10 | 2003-04-10 | Method of depositing piezoelectric films |
| GB0407506A Expired - Lifetime GB2400490B (en) | 2003-04-10 | 2004-04-02 | Methods of depositing piezoelectric films |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0407506A Expired - Lifetime GB2400490B (en) | 2003-04-10 | 2004-04-02 | Methods of depositing piezoelectric films |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP2004320759A (en) |
| DE (1) | DE102004014718A1 (en) |
| GB (2) | GB0308249D0 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7543496B2 (en) * | 2006-03-27 | 2009-06-09 | Georgia Tech Research Corporation | Capacitive bulk acoustic wave disk gyroscopes |
| WO2011026100A1 (en) | 2009-08-31 | 2011-03-03 | Georgia Tech Research Corporation | Bulk acoustic wave gyroscope with spoked structure |
| CN104579233B (en) * | 2013-10-23 | 2018-12-04 | 中兴通讯股份有限公司 | A kind of production method and device of film Resonator |
| US11401601B2 (en) | 2019-09-13 | 2022-08-02 | Qorvo Us, Inc. | Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4502932A (en) * | 1983-10-13 | 1985-03-05 | The United States Of America As Represented By The United States Department Of Energy | Acoustic resonator and method of making same |
| US5864261A (en) * | 1994-05-23 | 1999-01-26 | Iowa State University Research Foundation | Multiple layer acoustical structures for thin-film resonator based circuits and systems |
| JPH1064886A (en) * | 1996-08-20 | 1998-03-06 | Sony Corp | Dry etching apparatus and dry etching method |
| US6051907A (en) * | 1996-10-10 | 2000-04-18 | Nokia Mobile Phones Limited | Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS) |
| JPH10280153A (en) * | 1997-04-11 | 1998-10-20 | Toshiba Mach Co Ltd | Plasma cvd device |
| US6329305B1 (en) * | 2000-02-11 | 2001-12-11 | Agere Systems Guardian Corp. | Method for producing devices having piezoelectric films |
| US6342134B1 (en) * | 2000-02-11 | 2002-01-29 | Agere Systems Guardian Corp. | Method for producing piezoelectric films with rotating magnetron sputtering system |
| JP2002031523A (en) * | 2000-05-10 | 2002-01-31 | Rigaku Corp | Thin film measuring device, thin film measuring method, and thin film forming system |
| JP4575586B2 (en) * | 2000-12-19 | 2010-11-04 | キヤノンアネルバ株式会社 | Deposition equipment |
| US6518860B2 (en) * | 2001-01-05 | 2003-02-11 | Nokia Mobile Phones Ltd | BAW filters having different center frequencies on a single substrate and a method for providing same |
| US6611576B1 (en) * | 2001-02-12 | 2003-08-26 | Advanced Micro Devices, Inc. | Automated control of metal thickness during film deposition |
| US6456173B1 (en) * | 2001-02-15 | 2002-09-24 | Nokia Mobile Phones Ltd. | Method and system for wafer-level tuning of bulk acoustic wave resonators and filters |
| JP2002350370A (en) * | 2001-03-22 | 2002-12-04 | Rigaku Corp | X-ray measuring apparatus, system for measuring/forming thin film, and method for measuring/forming thin film |
| JP3954319B2 (en) * | 2001-03-28 | 2007-08-08 | 株式会社東芝 | Thin film thickness monitoring method and substrate temperature measurement method |
| US6472954B1 (en) * | 2001-04-23 | 2002-10-29 | Agilent Technologies, Inc. | Controlled effective coupling coefficients for film bulk acoustic resonators |
| US6480074B1 (en) * | 2001-04-27 | 2002-11-12 | Nokia Mobile Phones Ltd. | Method and system for wafer-level tuning of bulk acoustic wave resonators and filters by reducing thickness non-uniformity |
| US6601276B2 (en) * | 2001-05-11 | 2003-08-05 | Agere Systems Inc. | Method for self alignment of patterned layers in thin film acoustic devices |
| JP3984441B2 (en) * | 2001-07-26 | 2007-10-03 | 松下電器産業株式会社 | Piezoelectric thin film vibrator and filter |
| JP4288914B2 (en) * | 2002-08-21 | 2009-07-01 | パナソニック株式会社 | Resonant device manufacturing method |
-
2003
- 2003-04-10 GB GBGB0308249.2A patent/GB0308249D0/en not_active Ceased
-
2004
- 2004-03-25 DE DE102004014718A patent/DE102004014718A1/en not_active Withdrawn
- 2004-04-02 GB GB0407506A patent/GB2400490B/en not_active Expired - Lifetime
- 2004-04-07 JP JP2004113316A patent/JP2004320759A/en not_active Withdrawn
-
2010
- 2010-12-10 JP JP2010276137A patent/JP2011061867A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004320759A (en) | 2004-11-11 |
| GB0407506D0 (en) | 2004-05-05 |
| DE102004014718A1 (en) | 2004-10-21 |
| GB2400490A (en) | 2004-10-13 |
| JP2011061867A (en) | 2011-03-24 |
| GB2400490B (en) | 2006-06-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AT | Applications terminated before publication under section 16(1) |