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FR3112425B1 - Capteurs d'images comprenant une matrice de filtres interférentiels - Google Patents

Capteurs d'images comprenant une matrice de filtres interférentiels Download PDF

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Publication number
FR3112425B1
FR3112425B1 FR2007352A FR2007352A FR3112425B1 FR 3112425 B1 FR3112425 B1 FR 3112425B1 FR 2007352 A FR2007352 A FR 2007352A FR 2007352 A FR2007352 A FR 2007352A FR 3112425 B1 FR3112425 B1 FR 3112425B1
Authority
FR
France
Prior art keywords
face
filter
array
image sensors
interference filters
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2007352A
Other languages
English (en)
Other versions
FR3112425A1 (fr
Inventor
Jérôme Vaillant
Quentin Abadie
François Deneuville
Lilian Masarotto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR2007352A priority Critical patent/FR3112425B1/fr
Publication of FR3112425A1 publication Critical patent/FR3112425A1/fr
Application granted granted Critical
Publication of FR3112425B1 publication Critical patent/FR3112425B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

Capteurs d'images comprenant une matrice de filtres interférentiels La présente description concerne un capteur d'images (10) comprenant un substrat (12) comprenant des photodétecteurs (PH) adaptés à capter un rayonnement ; un filtre pixélisé (20) comprenant des première et deuxième faces opposées et comprenant des pixels de filtre (PFIRCUT, PFIRBP) dont au moins certains comprennent un filtre interférentiel ; des murs (40) réfléchissants ou absorbants ledit rayonnement s'étendant de la première face à la deuxième face et délimitant les pixels de filtres ; et une matrice (30) de lentilles (32) reposant sur la deuxième face, le filtre pixélisé étant interposé entre le substrat et la matrice de lentilles, la première face étant du côté du substrat et la deuxième face étant du côté des lentilles, le plan focal des lentilles correspondant à la deuxième face à 500 nm prés. Figure pour l'abrégé : Fig. 1
FR2007352A 2020-07-10 2020-07-10 Capteurs d'images comprenant une matrice de filtres interférentiels Active FR3112425B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR2007352A FR3112425B1 (fr) 2020-07-10 2020-07-10 Capteurs d'images comprenant une matrice de filtres interférentiels

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2007352A FR3112425B1 (fr) 2020-07-10 2020-07-10 Capteurs d'images comprenant une matrice de filtres interférentiels
FR2007352 2020-07-10

Publications (2)

Publication Number Publication Date
FR3112425A1 FR3112425A1 (fr) 2022-01-14
FR3112425B1 true FR3112425B1 (fr) 2024-01-12

Family

ID=73497870

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2007352A Active FR3112425B1 (fr) 2020-07-10 2020-07-10 Capteurs d'images comprenant une matrice de filtres interférentiels

Country Status (1)

Country Link
FR (1) FR3112425B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230006680A (ko) * 2021-07-01 2023-01-11 삼성전자주식회사 이미지 센서

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI756388B (zh) * 2017-03-24 2022-03-01 日商富士軟片股份有限公司 結構體、近紅外線透射濾波層形成用組成物及光感測器
FR3082322B1 (fr) * 2018-06-08 2020-07-31 Commissariat A L Energie Atomique Et Aux Energies Alternatives Capteurs d'images comprenant une matrice de filtres interferentiels

Also Published As

Publication number Publication date
FR3112425A1 (fr) 2022-01-14

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