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FR3100405B1 - Capteur à ondes acoustiques différentiel - Google Patents

Capteur à ondes acoustiques différentiel Download PDF

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Publication number
FR3100405B1
FR3100405B1 FR1909734A FR1909734A FR3100405B1 FR 3100405 B1 FR3100405 B1 FR 3100405B1 FR 1909734 A FR1909734 A FR 1909734A FR 1909734 A FR1909734 A FR 1909734A FR 3100405 B1 FR3100405 B1 FR 3100405B1
Authority
FR
France
Prior art keywords
interdigital transducer
acoustic wave
wave sensor
top surface
reflection structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1909734A
Other languages
English (en)
Other versions
FR3100405A1 (fr
Inventor
Sylvain Ballandras
Emilie Courjon
Florent Bernard
Thierry Laroche
Julien Garcia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Frecnsys SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1909734A priority Critical patent/FR3100405B1/fr
Application filed by Soitec SA, Frecnsys SAS filed Critical Soitec SA
Priority to PCT/EP2020/074865 priority patent/WO2021044031A1/fr
Priority to EP20775821.0A priority patent/EP4025904A1/fr
Priority to JP2022512797A priority patent/JP7381167B2/ja
Priority to US17/753,508 priority patent/US12392754B2/en
Priority to JP2023512318A priority patent/JP7590549B2/ja
Priority to PCT/IB2021/000128 priority patent/WO2022049418A1/fr
Priority to EP21720556.6A priority patent/EP4208715A1/fr
Priority to US18/042,948 priority patent/US20230361751A1/en
Publication of FR3100405A1 publication Critical patent/FR3100405A1/fr
Application granted granted Critical
Publication of FR3100405B1 publication Critical patent/FR3100405B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/22—Details, e.g. general constructional or apparatus details
    • G01N29/222—Constructional or flow details for analysing fluids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
    • G01K11/22—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of acoustic effects
    • G01K11/26—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of acoustic effects of resonant frequencies
    • G01K11/265—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of acoustic effects of resonant frequencies using surface acoustic wave [SAW]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02—Analysing fluids
    • G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/22—Details, e.g. general constructional or apparatus details
    • G01N29/24—Probes
    • G01N29/2462—Probes with waveguides, e.g. SAW devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/22—Details, e.g. general constructional or apparatus details
    • G01N29/24—Probes
    • G01N29/2481—Wireless probes, e.g. with transponders or radio links
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H03H9/02685—Grating lines having particular arrangements
    • H03H9/0274—Intra-transducers grating lines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H03H9/02685—Grating lines having particular arrangements
    • H03H9/02771—Reflector banks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H03H9/02779—Continuous surface reflective arrays
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02842—Means for compensation or elimination of undesirable effects of reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/025—Change of phase or condition
    • G01N2291/0256—Adsorption, desorption, surface mass change, e.g. on biosensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/028—Material parameters
    • G01N2291/02881—Temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/04—Wave modes and trajectories
    • G01N2291/042—Wave modes
    • G01N2291/0423—Surface waves, e.g. Rayleigh waves, Love waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/10—Number of transducers
    • G01N2291/101—Number of transducers one transducer

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

La présente invention concerne un dispositif capteur à ondes acoustiques, comprenant un transducteur interdigité ; une première structure de réflexion agencée sur un premier côté du transducteur interdigité ; une deuxième structure de réflexion agencée sur un autre côté du transducteur interdigité ; une première cavité de résonance comprenant une première surface supérieure et formée entre le transducteur interdigité et la première structure de réflexion ; une deuxième cavité de résonance comprenant une deuxième surface supérieure et formée entre le transducteur interdigité et la deuxième structure de réflexion ; et dans lequel la deuxième surface supérieure comprend une modification physique et/ou chimique par rapport à la première surface supérieure. Figure pour l’abrégé : Figure 2
FR1909734A 2019-09-04 2019-09-04 Capteur à ondes acoustiques différentiel Active FR3100405B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1909734A FR3100405B1 (fr) 2019-09-04 2019-09-04 Capteur à ondes acoustiques différentiel
EP20775821.0A EP4025904A1 (fr) 2019-09-04 2020-09-04 Capteur différentiel d'ondes acoustiques
JP2022512797A JP7381167B2 (ja) 2019-09-04 2020-09-04 差動音波センサ
US17/753,508 US12392754B2 (en) 2019-09-04 2020-09-04 Differential acoustic wave sensors
PCT/EP2020/074865 WO2021044031A1 (fr) 2019-09-04 2020-09-04 Capteur différentiel d'ondes acoustiques
JP2023512318A JP7590549B2 (ja) 2019-09-04 2021-03-03 石英基板に形成された表面弾性波センサデバイス
PCT/IB2021/000128 WO2022049418A1 (fr) 2019-09-04 2021-03-03 Dispositif capteur d'ondes acoustiques de surface formé sur un substrat de quartz
EP21720556.6A EP4208715A1 (fr) 2019-09-04 2021-03-03 Dispositif capteur d'ondes acoustiques de surface formé sur un substrat de quartz
US18/042,948 US20230361751A1 (en) 2019-09-04 2021-03-03 Surface acoustic wave sensor device formed on a quartz substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1909734 2019-09-04
FR1909734A FR3100405B1 (fr) 2019-09-04 2019-09-04 Capteur à ondes acoustiques différentiel

Publications (2)

Publication Number Publication Date
FR3100405A1 FR3100405A1 (fr) 2021-03-05
FR3100405B1 true FR3100405B1 (fr) 2021-12-31

Family

ID=69172907

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1909734A Active FR3100405B1 (fr) 2019-09-04 2019-09-04 Capteur à ondes acoustiques différentiel

Country Status (5)

Country Link
US (2) US12392754B2 (fr)
EP (2) EP4025904A1 (fr)
JP (2) JP7381167B2 (fr)
FR (1) FR3100405B1 (fr)
WO (2) WO2021044031A1 (fr)

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CN113394571B (zh) * 2021-07-20 2022-06-10 合肥工业大学 一种交指状阶梯谐振结构及低频率电磁波的吸波体
FR3127660A1 (fr) * 2021-09-27 2023-03-31 Frec'n'sys Filtre a ondes elastiques de surface et a cavites resonantes
FI131267B1 (fi) * 2022-06-14 2025-01-15 Teknologian Tutkimuskeskus Vtt Oy Akustinen aaltoresonaattori
US12020915B1 (en) * 2024-01-16 2024-06-25 King Faisal University Resonant frequency shift as etch stop of gate oxide of MOSFET transistor

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Also Published As

Publication number Publication date
US20230361751A1 (en) 2023-11-09
EP4208715A1 (fr) 2023-07-12
FR3100405A1 (fr) 2021-03-05
US12392754B2 (en) 2025-08-19
EP4025904A1 (fr) 2022-07-13
WO2021044031A1 (fr) 2021-03-11
JP2023540459A (ja) 2023-09-25
JP2022547268A (ja) 2022-11-11
WO2022049418A1 (fr) 2022-03-10
US20220341881A1 (en) 2022-10-27
JP7590549B2 (ja) 2024-11-26
JP7381167B2 (ja) 2023-11-15

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