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FR3141699B1 - Procédé de dépôt d’une couche de matériaux inorganiques ou hybrides organiques/inorganiques sur un substrat - Google Patents

Procédé de dépôt d’une couche de matériaux inorganiques ou hybrides organiques/inorganiques sur un substrat Download PDF

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Publication number
FR3141699B1
FR3141699B1 FR2211437A FR2211437A FR3141699B1 FR 3141699 B1 FR3141699 B1 FR 3141699B1 FR 2211437 A FR2211437 A FR 2211437A FR 2211437 A FR2211437 A FR 2211437A FR 3141699 B1 FR3141699 B1 FR 3141699B1
Authority
FR
France
Prior art keywords
inorganic
substrate
target
layer
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2211437A
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English (en)
Other versions
FR3141699A1 (fr
Inventor
Louis Grenet
Fabrice Emieux
Jean-Marie Verilhac
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trixell SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Trixell SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Trixell SAS, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR2211437A priority Critical patent/FR3141699B1/fr
Priority to PCT/EP2023/079830 priority patent/WO2024094525A1/fr
Priority to CN202380080792.5A priority patent/CN120265821A/zh
Priority to KR1020257017199A priority patent/KR20250105399A/ko
Priority to EP23800761.1A priority patent/EP4612344A1/fr
Publication of FR3141699A1 publication Critical patent/FR3141699A1/fr
Application granted granted Critical
Publication of FR3141699B1 publication Critical patent/FR3141699B1/fr
Active legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Procédé de dépôt d’une couche de matériaux inorganiques ou hybrides organiques/inorganiques sur un substrat L’invention se rapporte à un procédé de dépôt d’une couche d’un matériau inorganique ou hybride organique/inorganique sur un substrat pour la fabrication d’un dispositif électronique, optoélectronique et/ou optique, ledit procédé comprenant : une étape de préparation d’une cible ; une étape de positionnement de la cible sur un suscepteur dans un four de sublimation, ladite cible étant positionnée dans le four en vis-à-vis du substrat à couvrir ; et une étape de chauffe de la cible via le suscepteur pour déposer la couche de matériau inorganique ou hybride organique/inorganique sur le substrat par sublimation ; caractérisé en ce que la cible comprenant une pluralité de sous-cibles, l’étape de préparation de la cible permet d’obtenir des sous-cibles ayant une épaisseur variable et/ou l’étape de préparation de la cible permet d’obtenir des sous-cibles se chevauchant. Figure pour l’abrégé : Fig. 3
FR2211437A 2022-11-03 2022-11-03 Procédé de dépôt d’une couche de matériaux inorganiques ou hybrides organiques/inorganiques sur un substrat Active FR3141699B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2211437A FR3141699B1 (fr) 2022-11-03 2022-11-03 Procédé de dépôt d’une couche de matériaux inorganiques ou hybrides organiques/inorganiques sur un substrat
PCT/EP2023/079830 WO2024094525A1 (fr) 2022-11-03 2023-10-25 Procede de depot d'une couche de materiaux inorganiques ou hybrides organiques/inorganiques sur un substrat
CN202380080792.5A CN120265821A (zh) 2022-11-03 2023-10-25 在衬底上沉积有机/无机杂化材料或无机材料的层的方法
KR1020257017199A KR20250105399A (ko) 2022-11-03 2023-10-25 기판 상에 유기/무기 하이브리드 또는 무기 재료들의 층을 성막하는 방법
EP23800761.1A EP4612344A1 (fr) 2022-11-03 2023-10-25 Procede de depot d'une couche de materiaux inorganiques ou hybrides organiques/inorganiques sur un substrat

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2211437 2022-11-03
FR2211437A FR3141699B1 (fr) 2022-11-03 2022-11-03 Procédé de dépôt d’une couche de matériaux inorganiques ou hybrides organiques/inorganiques sur un substrat

Publications (2)

Publication Number Publication Date
FR3141699A1 FR3141699A1 (fr) 2024-05-10
FR3141699B1 true FR3141699B1 (fr) 2025-06-06

Family

ID=85175694

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2211437A Active FR3141699B1 (fr) 2022-11-03 2022-11-03 Procédé de dépôt d’une couche de matériaux inorganiques ou hybrides organiques/inorganiques sur un substrat

Country Status (5)

Country Link
EP (1) EP4612344A1 (fr)
KR (1) KR20250105399A (fr)
CN (1) CN120265821A (fr)
FR (1) FR3141699B1 (fr)
WO (1) WO2024094525A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6314865A (ja) * 1986-07-07 1988-01-22 Matsushita Electric Ind Co Ltd スパツタリング装置
US9412568B2 (en) * 2011-09-29 2016-08-09 H.C. Starck, Inc. Large-area sputtering targets
FR3111919B1 (fr) * 2020-06-30 2022-08-26 Commissariat Energie Atomique Procede de depot d’une couche de perovskite inorganique
FR3118066B1 (fr) * 2020-12-21 2023-07-21 Commissariat Energie Atomique Procede de depot d’une couche de perovskite organique ou hybride organique/inorganique
EP4053303A1 (fr) * 2021-03-01 2022-09-07 Carl Zeiss Vision International GmbH Procédé de dépôt de vapeur de revêtement d'un verre de lunette, système de dépôt physique en phase vapeur et creuset pour dépôt physique en phase vapeur

Also Published As

Publication number Publication date
KR20250105399A (ko) 2025-07-08
WO2024094525A1 (fr) 2024-05-10
CN120265821A (zh) 2025-07-04
FR3141699A1 (fr) 2024-05-10
EP4612344A1 (fr) 2025-09-10

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