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FR3140990B1 - Dispositif d’acquisition d’une image 2D et d’une image de profondeur d’une scène - Google Patents

Dispositif d’acquisition d’une image 2D et d’une image de profondeur d’une scène Download PDF

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Publication number
FR3140990B1
FR3140990B1 FR2210611A FR2210611A FR3140990B1 FR 3140990 B1 FR3140990 B1 FR 3140990B1 FR 2210611 A FR2210611 A FR 2210611A FR 2210611 A FR2210611 A FR 2210611A FR 3140990 B1 FR3140990 B1 FR 3140990B1
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FR
France
Prior art keywords
image
sensor
acquiring
depth
scene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2210611A
Other languages
English (en)
Other versions
FR3140990A1 (fr
Inventor
François Deneuville
Clémence Jamin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR2210611A priority Critical patent/FR3140990B1/fr
Priority to US18/485,181 priority patent/US20240128297A1/en
Priority to CN202311335672.3A priority patent/CN117896632A/zh
Publication of FR3140990A1 publication Critical patent/FR3140990A1/fr
Application granted granted Critical
Publication of FR3140990B1 publication Critical patent/FR3140990B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

Dispositif d’acquisition d’une image 2D et d’une image de profondeur d’une scène La présente description concerne un dispositif d’acquisition d’une image 2D et d’une image de profondeur, comprenant : – un premier capteur (C1) formé dans et sur un premier substrat semiconducteur (100) et comprenant des régions (50) en un matériau distinct de celui du substrat situées dans un empilement d’interconnexion (110) à l’aplomb de pixels d’image 2D (P1′) du premier capteur ; et – accolé au premier capteur (C1), un deuxième capteur (C2) formé dans et sur un deuxième substrat semiconducteur (130) et comprenant une pluralité de pixels de profondeur (P2) situés en regard des régions (50) du premier capteur (C1),dans lequel chaque région (50) comprend une première partie (50a) présentant, en vue de dessus, une surface inférieure à celle d’une deuxième partie (50b), le matériau des régions (50) présentant un indice optique supérieur ou égal à celui du matériau du substrat (100). Figure pour l’abrégé : Fig. 1
FR2210611A 2022-10-14 2022-10-14 Dispositif d’acquisition d’une image 2D et d’une image de profondeur d’une scène Active FR3140990B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR2210611A FR3140990B1 (fr) 2022-10-14 2022-10-14 Dispositif d’acquisition d’une image 2D et d’une image de profondeur d’une scène
US18/485,181 US20240128297A1 (en) 2022-10-14 2023-10-11 Device for acquiring a 2d image and a depth image of a scene
CN202311335672.3A CN117896632A (zh) 2022-10-14 2023-10-16 用于采集场景的2d图像和深度图像的设备

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2210611A FR3140990B1 (fr) 2022-10-14 2022-10-14 Dispositif d’acquisition d’une image 2D et d’une image de profondeur d’une scène
FR2210611 2022-10-14

Publications (2)

Publication Number Publication Date
FR3140990A1 FR3140990A1 (fr) 2024-04-19
FR3140990B1 true FR3140990B1 (fr) 2024-10-04

Family

ID=85381089

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2210611A Active FR3140990B1 (fr) 2022-10-14 2022-10-14 Dispositif d’acquisition d’une image 2D et d’une image de profondeur d’une scène

Country Status (3)

Country Link
US (1) US20240128297A1 (fr)
CN (1) CN117896632A (fr)
FR (1) FR3140990B1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11037966B2 (en) * 2017-09-22 2021-06-15 Qualcomm Incorporated Solid state image sensor with on-chip filter and extended spectral response
FR3108783B1 (fr) * 2020-03-24 2023-09-22 Commissariat Energie Atomique Dispositif d'acquisition d'une image 2D et d'une image de profondeur d'une scène
FR3114438B1 (fr) * 2020-09-21 2022-08-05 Commissariat Energie Atomique Capteur d'images

Also Published As

Publication number Publication date
US20240128297A1 (en) 2024-04-18
CN117896632A (zh) 2024-04-16
FR3140990A1 (fr) 2024-04-19

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