FR3016305A1 - Comblement des macropores d'un substrat fibreux par nucleation en phase homogene - Google Patents
Comblement des macropores d'un substrat fibreux par nucleation en phase homogene Download PDFInfo
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- FR3016305A1 FR3016305A1 FR1450183A FR1450183A FR3016305A1 FR 3016305 A1 FR3016305 A1 FR 3016305A1 FR 1450183 A FR1450183 A FR 1450183A FR 1450183 A FR1450183 A FR 1450183A FR 3016305 A1 FR3016305 A1 FR 3016305A1
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- substrate
- carbon
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- tetramethylsilane
- macropores
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- 239000000758 substrate Substances 0.000 title claims abstract description 92
- 230000006911 nucleation Effects 0.000 title claims abstract description 17
- 238000010899 nucleation Methods 0.000 title claims abstract description 17
- 239000012530 fluid Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 75
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 56
- 230000008569 process Effects 0.000 claims abstract description 48
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000010790 dilution Methods 0.000 claims abstract description 43
- 239000012895 dilution Substances 0.000 claims abstract description 43
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 238000011049 filling Methods 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 239000000835 fiber Substances 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 8
- 239000004917 carbon fiber Substances 0.000 claims description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052753 mercury Inorganic materials 0.000 claims description 3
- 238000001812 pycnometry Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000012298 atmosphere Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000000977 initiatory effect Effects 0.000 abstract description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 20
- 229910010271 silicon carbide Inorganic materials 0.000 description 19
- 238000000280 densification Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000011148 porous material Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 10
- 239000012071 phase Substances 0.000 description 10
- 239000002243 precursor Substances 0.000 description 10
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- 238000004519 manufacturing process Methods 0.000 description 6
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- 238000004626 scanning electron microscopy Methods 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000007865 diluting Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000012705 liquid precursor Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000007792 addition Methods 0.000 description 3
- 239000011153 ceramic matrix composite Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
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- 239000007789 gas Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 2
- 229920006184 cellulose methylcellulose Polymers 0.000 description 2
- 238000012710 chemistry, manufacturing and control Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000711 cancerogenic effect Effects 0.000 description 1
- 231100000315 carcinogenic Toxicity 0.000 description 1
- 239000012700 ceramic precursor Substances 0.000 description 1
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- 238000010924 continuous production Methods 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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- 150000002431 hydrogen Chemical class 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 231100000219 mutagenic Toxicity 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
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- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
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- C04B35/71—Ceramic products containing macroscopic reinforcing agents
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- C04B35/71—Ceramic products containing macroscopic reinforcing agents
- C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
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- C04B35/83—Carbon fibres in a carbon matrix
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/48—Organic compounds becoming part of a ceramic after heat treatment, e.g. carbonising phenol resins
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Abstract
Description
Claims (15)
- REVENDICATIONS1. Procédé de comblement de macropores d'un substrat fibreux poreux par formation de grains de carbone caractérisé en ce qu'une composition fluide contenant du tétraméthylsilane et un fluide de dilution est diffusée 5 au sein du substrat dans des conditions de température comprise entre 650 et 1100°C et sous pression avec une pression initiale inférieure à la pression critique du tétraméthylsilane et du fluide de dilution, avantageusement inférieure ou égale à 2 MPa, tout en maintenant le tétraméthylsilane et le fluide de dilution à l'état souscritique et de 10 provoquer spontanément une nucléation en phase homogène au sein des macropores du substrat à partir du tétraméthylsilane pour former directement les grains de carbone.
- 2. Procédé selon la revendication 1, caractérisé en ce que la température est comprise entre 700 et 1100 °C, avantageusement entre 750°C et 15 1000°C.
- 3. Procédé selon l'une quelconque des revendications 1 ou 2, caractérisé en ce que la pression initiale est comprise entre 0,8 et 2 MPa, avantageusement elle est de 1MPa.
- 4. Procédé selon l'une quelconque des revendications 1 à 3, caractérisé en 20 ce que le substrat fibreux poreux est formé à partir de fibres de carbone ou de céramique, avantageusement de fibres de carbone.
- 5. Procédé selon la revendication 4, caractérisé en ce que le substrat fibreux poreux est une préforme en fibres de carbone.
- 6. Procédé selon l'une quelconque des revendications 1 à 5, caractérisé en 25 ce que le substrat fibreux poreux n'est pas conducteur électrique.
- 7. Procédé selon l'une quelconque des revendications 1 à 6, caractérisé en ce que le substrat sur lequel est mis en oeuvre le procédé présente une porosité ouverte, mesurée par pycnométrie à l'hélium ou par un porosimètre au mercure, d'au plus 80 %.
- 8. Procédé selon l'une quelconque des revendications 1 à 7, caractérisé en ce que le fluide de dilution est neutre chimiquement vis-à-vis de la formation des grains de carbone, et avantageusement est choisi parmi les gaz inertes de l'atmosphère.
- 9. Procédé selon la revendication 8, caractérisé en ce que le fluide de dilution est choisi parmi l'azote et l'argon, avantageusement il s'agit de l'azote.
- 10. Procédé selon l'une quelconque des revendications 1 à 9, caractérisé en ce qu'il comprend les étapes (a) d'introduction d'une quantité de composition fluide dans une enceinte contenant le substrat et (b) d'établissement dans l'enceinte des conditions de température et de pression permettant de provoquer une nucléation en phase homogène de grains de carbone au sein des macropores du substrat tout en maintenant à l'état souscritique le tétraméthylsilane et le fluide de dilution.
- 11. Procédé selon l'une quelconque des revendications 1 à 10, caractérisé en ce qu'il comprend une étape préalable (A) ou une étape supplémentaire (B) de diffusion au sein du substrat d'une composition fluide contenant du tétraméthylsilane et un fluide de dilution, dans des conditions de température et de pression permettant de maintenir le fluide de dilution à l'état supercritique et de provoquer spontanément une nucléation en phase homogène au sein des macropores du substrat à partir du tétraméthylsilane pour former directement des grains de carbure de silicium.
- 12. Procédé selon la revendication 11, caractérisé en ce que la 25 température de cette étape préalable ou supplémentaire est comprise entre 600°C et 1100°C, avantageusement entre 750 et 1000°C.
- 13. Procédé selon l'une quelconque des revendications 11 ou 12, caractérisé en ce que la pression de cette étape préalable ou supplémentaire est comprise entre 4MPa et 6MPa.
- 14. Procédé selon l'une quelconque des revendications 11 à 13, caractérisé en ce qu'il comprend une étape supplémentaire (c) après l'étape (b) ou après l'éventuelle étape (B) de traitement par RMI du substrat de façon à transformer le carbone des grains en carbure.
- 15. Procédé selon l'une quelconque des revendications 1 à 9, caractérisé en ce qu'il comprend les étapes d'admission continue d'un flux de composition fluide dans une enceinte contenant le substrat, d'extraction continue d'un flux de fluide effluent hors de l'enceinte et de maintien de conditions de température du substrat et de pression dans l'enceinte permettant de provoquer une nucléation en phase homogène de grains de carbone au sein des macropores du substrat tout en maintenant à l'état souscritique le tétraméthylsilane et le fluide de dilution.
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| FR1450183A FR3016305B1 (fr) | 2014-01-10 | 2014-01-10 | Comblement des macropores d'un substrat fibreux par nucleation en phase homogene |
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| FR1450183A FR3016305B1 (fr) | 2014-01-10 | 2014-01-10 | Comblement des macropores d'un substrat fibreux par nucleation en phase homogene |
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| FR3016305A1 true FR3016305A1 (fr) | 2015-07-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118326365A (zh) * | 2024-05-24 | 2024-07-12 | 苏州铠欣半导体科技有限公司 | 碳化硅涂层及其制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007003813A2 (fr) * | 2005-05-13 | 2007-01-11 | Snecma Propulsion Solide | Procede de densification rapide d'un substrat poreux par formation d'un depot solide au sein de la porosite du substrat |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007003813A2 (fr) * | 2005-05-13 | 2007-01-11 | Snecma Propulsion Solide | Procede de densification rapide d'un substrat poreux par formation d'un depot solide au sein de la porosite du substrat |
Non-Patent Citations (2)
| Title |
|---|
| DATABASE COMPENDEX [online] ENGINEERING INFORMATION, INC., NEW YORK, NY, US; September 2011 (2011-09-01), PFLITSCH C ET AL: "Atmospheric pressure Chemical Vapor Infiltration (CVI) for the preparation of biomorphic SiC ceramics derived from paper", XP002726323, Database accession no. E20120814775500 * |
| JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY SEPTEMBER 2011 AMERICAN SCIENTIFIC PUBLISHERS USA, vol. 11, no. 9, September 2011 (2011-09-01), pages 8416 - 8419, DOI: 10.1166/JNN.2011.5096 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118326365A (zh) * | 2024-05-24 | 2024-07-12 | 苏州铠欣半导体科技有限公司 | 碳化硅涂层及其制备方法 |
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| FR3016305B1 (fr) | 2016-02-05 |
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