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FR3012672B1 - Cellule memoire comprenant des grilles de controle horizontale et verticale non auto-alignees - Google Patents

Cellule memoire comprenant des grilles de controle horizontale et verticale non auto-alignees

Info

Publication number
FR3012672B1
FR3012672B1 FR1360742A FR1360742A FR3012672B1 FR 3012672 B1 FR3012672 B1 FR 3012672B1 FR 1360742 A FR1360742 A FR 1360742A FR 1360742 A FR1360742 A FR 1360742A FR 3012672 B1 FR3012672 B1 FR 3012672B1
Authority
FR
France
Prior art keywords
self
memory cell
vertical control
control grids
aligned horizontal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1360742A
Other languages
English (en)
Other versions
FR3012672A1 (fr
Inventor
Rosa Francesco La
Stephan Niel
Julien Delalleau
Arnaud Regnier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1360742A priority Critical patent/FR3012672B1/fr
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to CN201420638559.2U priority patent/CN204271081U/zh
Priority to CN201410598228.5A priority patent/CN104600075B/zh
Priority to CN201810150720.4A priority patent/CN108198816B/zh
Priority to US14/528,785 priority patent/US9406686B2/en
Publication of FR3012672A1 publication Critical patent/FR3012672A1/fr
Priority to US15/195,784 priority patent/US9941369B2/en
Application granted granted Critical
Publication of FR3012672B1 publication Critical patent/FR3012672B1/fr
Priority to US15/914,846 priority patent/US10403730B2/en
Priority to US16/513,145 priority patent/US10686046B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6894—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having one gate at least partly in a trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
FR1360742A 2013-10-31 2013-10-31 Cellule memoire comprenant des grilles de controle horizontale et verticale non auto-alignees Expired - Fee Related FR3012672B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1360742A FR3012672B1 (fr) 2013-10-31 2013-10-31 Cellule memoire comprenant des grilles de controle horizontale et verticale non auto-alignees
CN201410598228.5A CN104600075B (zh) 2013-10-31 2014-10-30 存储器单元、电路以及制造存储器单元的方法
CN201810150720.4A CN108198816B (zh) 2013-10-31 2014-10-30 包含非自对准水平和垂直控制栅极的存储器单元
US14/528,785 US9406686B2 (en) 2013-10-31 2014-10-30 Memory cell comprising non-self-aligned horizontal and vertical control gates
CN201420638559.2U CN204271081U (zh) 2013-10-31 2014-10-30 存储器单元及电路
US15/195,784 US9941369B2 (en) 2013-10-31 2016-06-28 Memory cell comprising non-self-aligned horizontal and vertical control gates
US15/914,846 US10403730B2 (en) 2013-10-31 2018-03-07 Memory cell comprising non-self-aligned horizontal and vertical control gates
US16/513,145 US10686046B2 (en) 2013-10-31 2019-07-16 Memory cell comprising non-self-aligned horizontal and vertical control gates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1360742A FR3012672B1 (fr) 2013-10-31 2013-10-31 Cellule memoire comprenant des grilles de controle horizontale et verticale non auto-alignees

Publications (2)

Publication Number Publication Date
FR3012672A1 FR3012672A1 (fr) 2015-05-01
FR3012672B1 true FR3012672B1 (fr) 2017-04-14

Family

ID=49713385

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1360742A Expired - Fee Related FR3012672B1 (fr) 2013-10-31 2013-10-31 Cellule memoire comprenant des grilles de controle horizontale et verticale non auto-alignees

Country Status (3)

Country Link
US (4) US9406686B2 (fr)
CN (3) CN204271081U (fr)
FR (1) FR3012672B1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3012672B1 (fr) * 2013-10-31 2017-04-14 Stmicroelectronics Rousset Cellule memoire comprenant des grilles de controle horizontale et verticale non auto-alignees
FR3017746B1 (fr) 2014-02-18 2016-05-27 Stmicroelectronics Rousset Cellule memoire verticale ayant un implant drain-source flottant non auto-aligne
US9343468B1 (en) 2015-03-26 2016-05-17 Texas Instruments Incorporated Feed-forward bidirectional implanted split-gate flash memory cell
CN108806751B (zh) * 2017-04-26 2021-04-09 中芯国际集成电路制造(上海)有限公司 多次可程式闪存单元阵列及其操作方法、存储器件
US10553708B2 (en) * 2017-08-29 2020-02-04 International Business Machines Corporation Twin gate tunnel field-effect transistor (FET)
CN113497129B (zh) * 2020-04-07 2023-12-01 长鑫存储技术有限公司 半导体结构及其制作方法
US11404549B2 (en) * 2020-09-21 2022-08-02 Globalfoundries Singapore Pte. Ltd. Split gate flash memory cells with a trench-formed select gate
FR3121780A1 (fr) 2021-04-13 2022-10-14 Stmicroelectronics (Rousset) Sas Cellule mémoire programmable et effaçable
CN119325248B (zh) * 2024-10-10 2025-10-17 浙江创芯集成电路有限公司 半导体结构及其形成方法

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US5495441A (en) 1994-05-18 1996-02-27 United Microelectronics Corporation Split-gate flash memory cell
US5675161A (en) 1995-03-28 1997-10-07 Thomas; Mammen Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications
US5745410A (en) 1995-11-17 1998-04-28 Macronix International Co., Ltd. Method and system for soft programming algorithm
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FR2987697A1 (fr) 2012-03-05 2013-09-06 St Microelectronics Rousset Procede de fabrication d'une memoire non volatile
FR3012672B1 (fr) * 2013-10-31 2017-04-14 Stmicroelectronics Rousset Cellule memoire comprenant des grilles de controle horizontale et verticale non auto-alignees
FR3012673B1 (fr) 2013-10-31 2017-04-14 St Microelectronics Rousset Memoire programmable par injection de porteurs chauds et procede de programmation d'une telle memoire
FR3017746B1 (fr) * 2014-02-18 2016-05-27 Stmicroelectronics Rousset Cellule memoire verticale ayant un implant drain-source flottant non auto-aligne

Also Published As

Publication number Publication date
CN204271081U (zh) 2015-04-15
CN104600075B (zh) 2018-03-09
US10403730B2 (en) 2019-09-03
US20190341462A1 (en) 2019-11-07
US20150117117A1 (en) 2015-04-30
CN104600075A (zh) 2015-05-06
US10686046B2 (en) 2020-06-16
US20160308011A1 (en) 2016-10-20
FR3012672A1 (fr) 2015-05-01
CN108198816A (zh) 2018-06-22
US9941369B2 (en) 2018-04-10
US20180197963A1 (en) 2018-07-12
CN108198816B (zh) 2022-12-02
US9406686B2 (en) 2016-08-02

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