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FR3091020B1 - SUBSTRAT SEMI-CONDUCTEUR CO-DOPE n - Google Patents

SUBSTRAT SEMI-CONDUCTEUR CO-DOPE n Download PDF

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Publication number
FR3091020B1
FR3091020B1 FR1873952A FR1873952A FR3091020B1 FR 3091020 B1 FR3091020 B1 FR 3091020B1 FR 1873952 A FR1873952 A FR 1873952A FR 1873952 A FR1873952 A FR 1873952A FR 3091020 B1 FR3091020 B1 FR 3091020B1
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FR
France
Prior art keywords
growth
facets
basal
zones resulting
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1873952A
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English (en)
Other versions
FR3091020A1 (fr
Inventor
Bernard Beaumont
Jean-Pierre Faurie
Vincent Gelly
Nabil Nahas
Florian Tendille
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iv Works Co Ltd Kr
Original Assignee
Saint Gobain Lumilog SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1873952A priority Critical patent/FR3091020B1/fr
Application filed by Saint Gobain Lumilog SAS filed Critical Saint Gobain Lumilog SAS
Priority to EP19829153.6A priority patent/EP3900016A1/fr
Priority to JP2021536102A priority patent/JP7713384B2/ja
Priority to US17/415,921 priority patent/US11990335B2/en
Priority to CN201980091923.3A priority patent/CN113874981B/zh
Priority to KR1020217023173A priority patent/KR102902656B1/ko
Priority to PCT/EP2019/086123 priority patent/WO2020127605A1/fr
Publication of FR3091020A1 publication Critical patent/FR3091020A1/fr
Application granted granted Critical
Publication of FR3091020B1 publication Critical patent/FR3091020B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Procédé de fabrication d'un matériau monocristallin semi-conducteur de nitrure d’élément 13, en particulier de GaN, comprenant les étapes de : dépôt d’au moins une couche monocristalline par croissance épitaxiale tridimensionnelle sur un substrat de départ, ladite couche comportant des zones issues de la croissance de facettes basales, et des zones issues de la croissance de facettes d’orientations différentes dites non-basales ;apport d’un gaz dopant n comportant un premier élément chimique choisi parmi les éléments chimiques du groupe 16 du tableau périodique, et au moins un second élément chimique choisi parmi les éléments chimiques du groupe 14 du tableau périodique, de telle sorte que la concentration du second élément dans les zones issues de la croissance des facettes basales est supérieure à 1.0×1017/cm3, et la concentration du premier élément dans les zones issues de la croissance des facettes non-basales est inférieure à 2.0×1018/cm3. Figure pour l’abrégé : [Fig. 1]
FR1873952A 2018-12-21 2018-12-21 SUBSTRAT SEMI-CONDUCTEUR CO-DOPE n Active FR3091020B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1873952A FR3091020B1 (fr) 2018-12-21 2018-12-21 SUBSTRAT SEMI-CONDUCTEUR CO-DOPE n
JP2021536102A JP7713384B2 (ja) 2018-12-21 2019-12-18 Ｎ共ドープ半導体基板
US17/415,921 US11990335B2 (en) 2018-12-21 2019-12-18 N-CO-doped semiconductor substrate
CN201980091923.3A CN113874981B (zh) 2018-12-21 2019-12-18 n-共掺杂的半导体基板
EP19829153.6A EP3900016A1 (fr) 2018-12-21 2019-12-18 Substrat semi-conducteur co-dope n
KR1020217023173A KR102902656B1 (ko) 2018-12-21 2019-12-18 N-동시-도핑된 반도체 기판
PCT/EP2019/086123 WO2020127605A1 (fr) 2018-12-21 2019-12-18 SUBSTRAT SEMI-CONDUCTEUR CO-DOPE n

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1873952A FR3091020B1 (fr) 2018-12-21 2018-12-21 SUBSTRAT SEMI-CONDUCTEUR CO-DOPE n

Publications (2)

Publication Number Publication Date
FR3091020A1 FR3091020A1 (fr) 2020-06-26
FR3091020B1 true FR3091020B1 (fr) 2023-02-10

Family

ID=66867303

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1873952A Active FR3091020B1 (fr) 2018-12-21 2018-12-21 SUBSTRAT SEMI-CONDUCTEUR CO-DOPE n

Country Status (6)

Country Link
US (1) US11990335B2 (fr)
EP (1) EP3900016A1 (fr)
JP (1) JP7713384B2 (fr)
CN (1) CN113874981B (fr)
FR (1) FR3091020B1 (fr)
WO (1) WO2020127605A1 (fr)

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2769924B1 (fr) 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
JP2002270516A (ja) * 2001-03-07 2002-09-20 Nec Corp Ｉｉｉ族窒化物半導体の成長方法、ｉｉｉ族窒化物半導体膜およびそれを用いた半導体素子
JP3886341B2 (ja) 2001-05-21 2007-02-28 日本電気株式会社 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
FR2840452B1 (fr) 2002-05-28 2005-10-14 Lumilog Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat
FR2860248B1 (fr) 2003-09-26 2006-02-17 Centre Nat Rech Scient Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle
KR100673873B1 (ko) 2005-05-12 2007-01-25 삼성코닝 주식회사 열전도도가 우수한 질화갈륨 단결정 기판
TWI519686B (zh) 2005-12-15 2016-02-01 聖戈班晶體探測器公司 低差排密度氮化鎵（ＧａＮ）之生長方法
US8778078B2 (en) 2006-08-09 2014-07-15 Freiberger Compound Materials Gmbh Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
JP2008303136A (ja) * 2007-05-08 2008-12-18 Sumitomo Chemical Co Ltd 化合物半導体基板の製造方法
JP4941172B2 (ja) * 2007-08-22 2012-05-30 日立電線株式会社 Ｉｉｉ−ｖ族窒化物半導体自立基板及びｉｉｉ−ｖ族窒化物半導体自立基板の製造方法
JP4985533B2 (ja) * 2007-10-24 2012-07-25 住友電気工業株式会社 半絶縁性窒化物半導体基板の製造方法
JP2010070430A (ja) 2008-09-22 2010-04-02 Sumitomo Electric Ind Ltd 導電性窒化物半導体基板並びにその製造方法
JP5251893B2 (ja) 2010-01-21 2013-07-31 日立電線株式会社 導電性ｉｉｉ族窒化物結晶の製造方法及び導電性ｉｉｉ族窒化物基板の製造方法
US8110484B1 (en) * 2010-11-19 2012-02-07 Sumitomo Electric Industries, Ltd. Conductive nitride semiconductor substrate and method for producing the same
WO2013003420A2 (fr) 2011-06-27 2013-01-03 Saint-Gobain Ceramics & Plastics, Inc. Substrat semi-conducteur et procédé de fabrication associé
KR102467949B1 (ko) * 2015-02-23 2022-11-16 미쯔비시 케미컬 주식회사 C 면 GaN 기판
JP6547552B2 (ja) * 2015-09-28 2019-07-24 三菱ケミカル株式会社 Ｃ面ＧａＮウエハおよびＣ面ＧａＮウエハ製造方法
CN108291329B (zh) * 2015-12-11 2019-03-01 日本碍子株式会社 13族元素氮化物结晶基板及功能元件

Also Published As

Publication number Publication date
US11990335B2 (en) 2024-05-21
JP7713384B2 (ja) 2025-07-25
WO2020127605A1 (fr) 2020-06-25
CN113874981A (zh) 2021-12-31
FR3091020A1 (fr) 2020-06-26
CN113874981B (zh) 2025-09-19
KR20210139218A (ko) 2021-11-22
US20220068641A1 (en) 2022-03-03
JP2022515212A (ja) 2022-02-17
EP3900016A1 (fr) 2021-10-27

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