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FR3077920B1 - SPECIFIC DIELECTRIC LAYER FOR CAPACITIVE DEVICE - Google Patents

SPECIFIC DIELECTRIC LAYER FOR CAPACITIVE DEVICE Download PDF

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Publication number
FR3077920B1
FR3077920B1 FR1800127A FR1800127A FR3077920B1 FR 3077920 B1 FR3077920 B1 FR 3077920B1 FR 1800127 A FR1800127 A FR 1800127A FR 1800127 A FR1800127 A FR 1800127A FR 3077920 B1 FR3077920 B1 FR 3077920B1
Authority
FR
France
Prior art keywords
sub
dielectric layer
layer
capacitive device
specific dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1800127A
Other languages
French (fr)
Other versions
FR3077920A1 (en
Inventor
Aude Leuliet
Anne Charlotte Amiaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR1800127A priority Critical patent/FR3077920B1/en
Priority to PCT/EP2019/053434 priority patent/WO2019155083A1/en
Priority to EP19703136.2A priority patent/EP3753033A1/en
Publication of FR3077920A1 publication Critical patent/FR3077920A1/en
Application granted granted Critical
Publication of FR3077920B1 publication Critical patent/FR3077920B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/01—Details
    • H01G5/013—Dielectrics
    • H01G5/0134—Solid dielectrics
    • H01G5/0136—Solid dielectrics with movable electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1272—Semiconductive ceramic capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

La présente invention concerne une couche diélectrique destinée à interagir avec deux électrodes pour former un dispositif capacitif, la couche diélectrique étant un empilement de sous-couches superposées, chaque sous-couche présentant une épaisseur inférieure à 1 nanomètre, chaque sous-couche étant réalisée en un matériau dopé ou non, le matériau étant constitué de plusieurs éléments chimiques, chaque matériau d'une sous-couche variant par rapport aux autres matériaux des autres sous-couches au plus uniquement par au moins l'un parmi la stœchiométrie des éléments et le taux de dopage, les matériaux de chaque sous-couche étant choisis pour que la variation relative de capacité pour une tension prédéfinie appliquée à la couche diélectrique soit inférieure ou égale à 3.10-3.The present invention relates to a dielectric layer intended to interact with two electrodes to form a capacitive device, the dielectric layer being a stack of superposed sub-layers, each sub-layer having a thickness of less than 1 nanometer, each sub-layer being made of a doped or undoped material, the material consisting of several chemical elements, each material of a sub-layer varying with respect to the other materials of the other sub-layers at most only by at least one among the stoichiometry of the elements and the doping rate, the materials of each sub-layer being chosen so that the relative capacitance variation for a predefined voltage applied to the dielectric layer is less than or equal to 3.10-3.

FR1800127A 2018-02-12 2018-02-12 SPECIFIC DIELECTRIC LAYER FOR CAPACITIVE DEVICE Active FR3077920B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1800127A FR3077920B1 (en) 2018-02-12 2018-02-12 SPECIFIC DIELECTRIC LAYER FOR CAPACITIVE DEVICE
PCT/EP2019/053434 WO2019155083A1 (en) 2018-02-12 2019-02-12 Specific dielectric layer for capacitive device
EP19703136.2A EP3753033A1 (en) 2018-02-12 2019-02-12 Specific dielectric layer for capacitive device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1800127 2018-02-12
FR1800127A FR3077920B1 (en) 2018-02-12 2018-02-12 SPECIFIC DIELECTRIC LAYER FOR CAPACITIVE DEVICE

Publications (2)

Publication Number Publication Date
FR3077920A1 FR3077920A1 (en) 2019-08-16
FR3077920B1 true FR3077920B1 (en) 2022-04-08

Family

ID=62222800

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1800127A Active FR3077920B1 (en) 2018-02-12 2018-02-12 SPECIFIC DIELECTRIC LAYER FOR CAPACITIVE DEVICE

Country Status (3)

Country Link
EP (1) EP3753033A1 (en)
FR (1) FR3077920B1 (en)
WO (1) WO2019155083A1 (en)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7092234B2 (en) * 2003-05-20 2006-08-15 Micron Technology, Inc. DRAM cells and electronic systems
KR100541551B1 (en) * 2003-09-19 2006-01-10 삼성전자주식회사 Analog capacitor with at least three layers of high dielectric films and method of manufacturing same
KR100549003B1 (en) * 2004-02-04 2006-02-02 삼성전자주식회사 MEMS tunable capacitors with wide tuning range and method of manufacturing them
KR100630687B1 (en) * 2004-07-05 2006-10-02 삼성전자주식회사 Capacitor of Analog Semiconductor Device with Multi-layer Dielectric Film and Formation Method thereof
US8110469B2 (en) * 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
FR2907592B1 (en) * 2006-10-19 2008-12-26 Commissariat Energie Atomique THIN FILM CAPACITOR WITH HIGH STABILITY AND METHOD OF MANUFACTURE
US7723771B2 (en) * 2007-03-30 2010-05-25 Qimonda Ag Zirconium oxide based capacitor and process to manufacture the same
TW201030781A (en) * 2009-02-12 2010-08-16 Lite On Capital Inc Thin film capacitor
US8940388B2 (en) * 2011-03-02 2015-01-27 Micron Technology, Inc. Insulative elements
US8440537B1 (en) * 2011-11-11 2013-05-14 Intermolecular, Inc. Adsorption site blocking method for co-doping ALD films
US8574998B2 (en) * 2011-12-05 2013-11-05 Intermolecular, Inc. Leakage reduction in DRAM MIM capacitors
US20150170837A1 (en) * 2013-12-18 2015-06-18 Intermolecular, Inc. Dielectric K Value Tuning of HAH Stack for Improved TDDB Performance of Logic Decoupling Capacitor or Embedded DRAM
US9178006B2 (en) * 2014-02-10 2015-11-03 Intermolecular, Inc. Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications
US10153155B2 (en) * 2015-10-09 2018-12-11 University Of Florida Research Foundation, Incorporated Doped ferroelectric hafnium oxide film devices

Also Published As

Publication number Publication date
FR3077920A1 (en) 2019-08-16
WO2019155083A1 (en) 2019-08-15
EP3753033A1 (en) 2020-12-23

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