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FR3064283B1 - Procede et dispositif reacteur pour la realisation de couches minces mettant en œuvre une succession d'etapes de depots, et applications de ce procede - Google Patents

Procede et dispositif reacteur pour la realisation de couches minces mettant en œuvre une succession d'etapes de depots, et applications de ce procede Download PDF

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Publication number
FR3064283B1
FR3064283B1 FR1752341A FR1752341A FR3064283B1 FR 3064283 B1 FR3064283 B1 FR 3064283B1 FR 1752341 A FR1752341 A FR 1752341A FR 1752341 A FR1752341 A FR 1752341A FR 3064283 B1 FR3064283 B1 FR 3064283B1
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France
Prior art keywords
deposition
deposit
succession
stages
applications
Prior art date
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Application number
FR1752341A
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English (en)
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FR3064283A1 (fr
Inventor
Fabien Piallat
Julien Vitiello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobus SAS
Original Assignee
Kobus SAS
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Publication date
Application filed by Kobus SAS filed Critical Kobus SAS
Priority to FR1752341A priority Critical patent/FR3064283B1/fr
Priority to PCT/EP2018/056954 priority patent/WO2018172321A1/fr
Publication of FR3064283A1 publication Critical patent/FR3064283A1/fr
Application granted granted Critical
Publication of FR3064283B1 publication Critical patent/FR3064283B1/fr
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Procédé de dépôt comprenant une mise en œuvre séquentielle d'au moins deux types de dépôt parmi un dépôt de type ALD, et un dépôt de type CVD pulsé, et un dépôt de type CVD. Chaque dépôt peut éventuellement être assisté par plasma. Les différents dépôts sont de préférence réalisés dans une même chambre, permettant de mettre en œuvre les différents types de dépôt. Les séquences de dépôt sont réalisées de sorte à obtenir des caractéristiques de couches particulières, tel que par exemple une conformité de valeur déterminée, une couche d'accroche de qualité particulière ou une couche barrière de qualité particulière. Application notamment pour la réalisation de trous d'interconnexion (vias)
FR1752341A 2017-03-22 2017-03-22 Procede et dispositif reacteur pour la realisation de couches minces mettant en œuvre une succession d'etapes de depots, et applications de ce procede Active FR3064283B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1752341A FR3064283B1 (fr) 2017-03-22 2017-03-22 Procede et dispositif reacteur pour la realisation de couches minces mettant en œuvre une succession d'etapes de depots, et applications de ce procede
PCT/EP2018/056954 WO2018172321A1 (fr) 2017-03-22 2018-03-20 Procédé et dispositif réacteur pour la réalisation de couches minces mettant en œuvre une succession d'étapes de dépôts, et applications de ce procédé

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1752341 2017-03-22
FR1752341A FR3064283B1 (fr) 2017-03-22 2017-03-22 Procede et dispositif reacteur pour la realisation de couches minces mettant en œuvre une succession d'etapes de depots, et applications de ce procede

Publications (2)

Publication Number Publication Date
FR3064283A1 FR3064283A1 (fr) 2018-09-28
FR3064283B1 true FR3064283B1 (fr) 2022-04-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR1752341A Active FR3064283B1 (fr) 2017-03-22 2017-03-22 Procede et dispositif reacteur pour la realisation de couches minces mettant en œuvre une succession d'etapes de depots, et applications de ce procede

Country Status (2)

Country Link
FR (1) FR3064283B1 (fr)
WO (1) WO2018172321A1 (fr)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030059535A1 (en) * 2001-09-25 2003-03-27 Lee Luo Cycling deposition of low temperature films in a cold wall single wafer process chamber
KR20070089197A (ko) 2004-11-22 2007-08-30 어플라이드 머티어리얼스, 인코포레이티드 배치 처리 챔버를 사용한 기판 처리 기기
JP5513767B2 (ja) * 2008-06-25 2014-06-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置および半導体装置
US8728956B2 (en) * 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9257274B2 (en) * 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US20120015113A1 (en) 2010-07-13 2012-01-19 Applied Materials, Inc. Methods for forming low stress dielectric films
US9543140B2 (en) * 2013-10-16 2017-01-10 Asm Ip Holding B.V. Deposition of boron and carbon containing materials
US10214817B2 (en) * 2013-10-16 2019-02-26 The Board Of Trustees Of The University Of Illinois Multi-metal films, alternating film multilayers, formation methods and deposition system
FR3018825B1 (fr) 2014-03-21 2017-09-01 Altatech Semiconductor Procede de depot en phase gazeuse

Also Published As

Publication number Publication date
FR3064283A1 (fr) 2018-09-28
WO2018172321A1 (fr) 2018-09-27

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