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FR3061608B1 - Dispositif optoelectronique a diodes electroluminescentes - Google Patents

Dispositif optoelectronique a diodes electroluminescentes Download PDF

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Publication number
FR3061608B1
FR3061608B1 FR1663508A FR1663508A FR3061608B1 FR 3061608 B1 FR3061608 B1 FR 3061608B1 FR 1663508 A FR1663508 A FR 1663508A FR 1663508 A FR1663508 A FR 1663508A FR 3061608 B1 FR3061608 B1 FR 3061608B1
Authority
FR
France
Prior art keywords
emitting diodes
substrate
light
forming
optoelectronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1663508A
Other languages
English (en)
Other versions
FR3061608A1 (fr
Inventor
Zheng-Sung Chio
Wei Sin Tan
Vincent Beix
Philippe Gilet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1663508A priority Critical patent/FR3061608B1/fr
Application filed by Aledia filed Critical Aledia
Priority to JP2019535940A priority patent/JP6872619B2/ja
Priority to US16/473,551 priority patent/US10734442B2/en
Priority to CN201780086474.4A priority patent/CN110313069B/zh
Priority to TW106146178A priority patent/TWI758392B/zh
Priority to EP17822340.0A priority patent/EP3563417B1/fr
Priority to KR1020197021931A priority patent/KR102468911B1/ko
Priority to PCT/EP2017/084778 priority patent/WO2018122355A1/fr
Publication of FR3061608A1 publication Critical patent/FR3061608A1/fr
Application granted granted Critical
Publication of FR3061608B1 publication Critical patent/FR3061608B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un dispositif optoélectronique (10), comprenant les étapes successives suivantes : a) prévoir un substrat au moins en partie en un matériau semiconducteur et ayant des première et deuxième faces opposées ; b) former des diodes électroluminescentes (16) sur le substrat, chaque diode électroluminescente comprenant un microfil ou nanofil semiconducteur (46) recouvert d'une coque ; c) former une couche d'encapsulation (50) entourant les diodes électroluminescentes ; d) former des plots conducteurs (18) sur la couche d'encapsulation, du côté de la couche d'encapsulation opposé au substrat, en contact avec les diodes électroluminescentes ; et e) former des ouvertures traversantes (26) dans le substrat depuis le côté de la deuxième face, lesdites ouvertures faisant face au moins en partie aux diodes électroluminescentes et délimitant des murs (28) dans le substrat.
FR1663508A 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes Expired - Fee Related FR3061608B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1663508A FR3061608B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes
US16/473,551 US10734442B2 (en) 2016-12-29 2017-12-28 Optoelectronic device with light-emitting diodes
CN201780086474.4A CN110313069B (zh) 2016-12-29 2017-12-28 具有发光二极管的光电设备
TW106146178A TWI758392B (zh) 2016-12-29 2017-12-28 具有發光二極體的光電裝置及其製造方法
JP2019535940A JP6872619B2 (ja) 2016-12-29 2017-12-28 発光ダイオードを備えた光電子デバイス
EP17822340.0A EP3563417B1 (fr) 2016-12-29 2017-12-28 Dispositif optoélectronique à diodes électroluminescentes
KR1020197021931A KR102468911B1 (ko) 2016-12-29 2017-12-28 발광다이오드를 구비한 광전자장치
PCT/EP2017/084778 WO2018122355A1 (fr) 2016-12-29 2017-12-28 Dispositif optoélectronique à diodes électroluminescentes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1663508A FR3061608B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes
FR1663508 2016-12-29

Publications (2)

Publication Number Publication Date
FR3061608A1 FR3061608A1 (fr) 2018-07-06
FR3061608B1 true FR3061608B1 (fr) 2019-05-31

Family

ID=58737670

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1663508A Expired - Fee Related FR3061608B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes

Country Status (8)

Country Link
US (1) US10734442B2 (fr)
EP (1) EP3563417B1 (fr)
JP (1) JP6872619B2 (fr)
KR (1) KR102468911B1 (fr)
CN (1) CN110313069B (fr)
FR (1) FR3061608B1 (fr)
TW (1) TWI758392B (fr)
WO (1) WO2018122355A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11049900B2 (en) 2018-08-30 2021-06-29 Analog Devices, Inc. Monolithically integrated nanoemitter light source assembly
JP2020141001A (ja) * 2019-02-27 2020-09-03 キオクシア株式会社 半導体装置および半導体装置の製造方法
US11094846B1 (en) 2020-08-31 2021-08-17 4233999 Canada Inc. Monolithic nanocolumn structures
DE112022003001T5 (de) * 2021-09-08 2024-03-28 Ams-Osram International Gmbh Optoelektronisches bauelement, bauelementeinheit und verfahren zu deren herstellung
US11799054B1 (en) 2023-02-08 2023-10-24 4233999 Canada Inc. Monochromatic emitters on coalesced selective area growth nanocolumns
CN116169216B (zh) * 2023-03-10 2025-08-05 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管
FR3150905B1 (fr) 2023-07-09 2025-05-23 Commissariat Energie Atomique Procédé de fabrication d’un dispositif électroluminescent

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9106056B1 (en) * 2007-04-25 2015-08-11 Stc.Unm Phase-coupled arrays of nanowire laser devices and method of controlling an array of such devices
US8964020B2 (en) * 2007-04-25 2015-02-24 Stc.Unm Solid-state microscope for selectively imaging a sample
KR101608868B1 (ko) * 2009-10-22 2016-04-04 삼성전자주식회사 조리개를 포함하는 발광다이오드 어레이, 이를 이용한 라인 프린터 헤드 및 발광다이오드 어레이의 제조방법
JP2011135058A (ja) 2009-11-30 2011-07-07 Honda Motor Co Ltd 太陽電池素子、カラーセンサ、ならびに発光素子及び受光素子の製造方法
CN103098237A (zh) * 2010-06-18 2013-05-08 Glo公司 纳米线发光二极管结构及其制造方法
US8350251B1 (en) * 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
DE102012109460B4 (de) 2012-10-04 2024-03-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display
US9537044B2 (en) 2012-10-26 2017-01-03 Aledia Optoelectric device and method for manufacturing the same
JP6353845B2 (ja) * 2012-10-26 2018-07-04 グロ アーベーＧｌｏ Ａｂ ナノワイヤｌｅｄ構造の製造方法
TW201511334A (zh) * 2013-06-07 2015-03-16 Glo Ab 具有經減低漏電之奈米線發光二極體結構及其製造方法
FR3007580B1 (fr) * 2013-06-25 2016-10-21 Commissariat Energie Atomique Dispositif optoelectronique a reflectivite amelioree
FR3011381B1 (fr) * 2013-09-30 2017-12-08 Aledia Dispositif optoelectronique a diodes electroluminescentes
FR3011383B1 (fr) * 2013-09-30 2017-05-26 Commissariat Energie Atomique Procede de fabrication de dispositifs optoelectroniques a diodes electroluminescentes
WO2015063077A1 (fr) * 2013-10-29 2015-05-07 Osram Opto Semiconductors Gmbh Élément de conversion de longueur d'onde, son procédé de fabrication et composant électroluminescent à semi-conducteur le comprenant
US9287468B2 (en) * 2013-11-22 2016-03-15 Glo Ab LED submount with integrated interconnects
KR20160024170A (ko) * 2014-08-25 2016-03-04 삼성전자주식회사 반도체 발광 소자
FR3031238B1 (fr) * 2014-12-30 2016-12-30 Aledia Dispositif optoelectronique a diodes electroluminescentes

Also Published As

Publication number Publication date
US20190333963A1 (en) 2019-10-31
EP3563417B1 (fr) 2020-10-28
JP6872619B2 (ja) 2021-05-19
US10734442B2 (en) 2020-08-04
KR102468911B1 (ko) 2022-11-18
CN110313069A (zh) 2019-10-08
WO2018122355A1 (fr) 2018-07-05
KR20190094471A (ko) 2019-08-13
CN110313069B (zh) 2023-04-28
EP3563417A1 (fr) 2019-11-06
TWI758392B (zh) 2022-03-21
TW201839968A (zh) 2018-11-01
JP2020503695A (ja) 2020-01-30
FR3061608A1 (fr) 2018-07-06

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