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FR3055166B1 - Procede de connection intercomposants a densite optimisee - Google Patents

Procede de connection intercomposants a densite optimisee Download PDF

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Publication number
FR3055166B1
FR3055166B1 FR1601237A FR1601237A FR3055166B1 FR 3055166 B1 FR3055166 B1 FR 3055166B1 FR 1601237 A FR1601237 A FR 1601237A FR 1601237 A FR1601237 A FR 1601237A FR 3055166 B1 FR3055166 B1 FR 3055166B1
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France
Prior art keywords
component
intercomponent
connection
connection process
optimized density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1601237A
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English (en)
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FR3055166A1 (fr
Inventor
Francois Marion
Lydie Mathieu
Frederic Berger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1601237A priority Critical patent/FR3055166B1/fr
Priority to PCT/FR2017/052247 priority patent/WO2018033689A1/fr
Priority to CN201780058209.5A priority patent/CN109791920A/zh
Priority to US16/325,095 priority patent/US20210280628A1/en
Priority to EP17764883.9A priority patent/EP3501042A1/fr
Publication of FR3055166A1 publication Critical patent/FR3055166A1/fr
Application granted granted Critical
Publication of FR3055166B1 publication Critical patent/FR3055166B1/fr
Expired - Fee Related legal-status Critical Current
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    • HELECTRICITY
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    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H01L2924/3841Solder bridging

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

L'invention concerne un procédé de connexion électrique par hybridation d'un premier composant (100) à un deuxième composant (200). Le procédé comportant les étapes suivantes : formation de plots en matériau ductile (111, 121) en contact respectif des zones de connexion (110, 120) du premier composant (100) ; formation d'inserts (211, 221) en matériau conducteur en contact de des zones de connexion (210, 220) du deuxième composant (200) ; formation de barrières d'hybridation (212, 222) disposées entre les inserts (211, 221) et isolées électriquement l'une de l'autre, lesdites première et deuxième barrière d'hybridation (212, 222) pour faire office de barrière en contenant la déformation des plots en matériau ductile (111, 121) lors de la connexion des zones de connexion (210, 220) du premier composant (100) avec celles du deuxième composant (200). L'invention concerne en outre un ensemble (1) de deux composants (100, 200) connectés
FR1601237A 2016-08-18 2016-08-18 Procede de connection intercomposants a densite optimisee Expired - Fee Related FR3055166B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1601237A FR3055166B1 (fr) 2016-08-18 2016-08-18 Procede de connection intercomposants a densite optimisee
PCT/FR2017/052247 WO2018033689A1 (fr) 2016-08-18 2017-08-18 Procédé de connection intercomposants à densité optimisée
CN201780058209.5A CN109791920A (zh) 2016-08-18 2017-08-18 以最佳密度连接交叉部件的方法
US16/325,095 US20210280628A1 (en) 2016-08-18 2017-08-18 Method for connecting cross-components at optimised density
EP17764883.9A EP3501042A1 (fr) 2016-08-18 2017-08-18 Procédé de connection intercomposants à densité optimisée

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Application Number Priority Date Filing Date Title
FR1601237A FR3055166B1 (fr) 2016-08-18 2016-08-18 Procede de connection intercomposants a densite optimisee
FR1601237 2016-08-18

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FR3055166B1 true FR3055166B1 (fr) 2020-12-25

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EP (1) EP3501042A1 (fr)
CN (1) CN109791920A (fr)
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WO (1) WO2018033689A1 (fr)

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PT3604792T (pt) 2018-08-03 2022-01-31 Ge Renewable Tech Tampa preformada com perfis interpás para turbinas hidráulicas
FR3091411B1 (fr) * 2018-12-28 2021-01-29 Commissariat Energie Atomique Procédés de fabrication optimisés d’une structure destinée à être assemblée par hybridation et d’un dispositif comprenant une telle structure
FR3113982A1 (fr) 2020-09-10 2022-03-11 Commissariat à l'Energie Atomique et aux Energies Alternatives procédé d’assemblage par hybridation de deux composants microélectroniques

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JPH06164185A (ja) * 1992-11-20 1994-06-10 Tatsuta Electric Wire & Cable Co Ltd ハイブリッドic
JP2005197488A (ja) * 2004-01-08 2005-07-21 Sony Corp 突起電極及びボンディングキャピラリ並びに半導体チップ
JP2006100552A (ja) * 2004-09-29 2006-04-13 Rohm Co Ltd 配線基板および半導体装置
FR2876243B1 (fr) 2004-10-04 2007-01-26 Commissariat Energie Atomique Composant a protuberances conductrices ductiles enterrees et procede de connexion electrique entre ce composant et un composant muni de pointes conductrices dures
JP5076482B2 (ja) * 2006-01-20 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
US8218918B2 (en) 2007-03-26 2012-07-10 Trex Enterprises Corp Optical fiber switch with movable lens
KR20090038624A (ko) * 2007-10-16 2009-04-21 주식회사 동부하이텍 배리어 금속막 형성 방법
FR2928033B1 (fr) * 2008-02-22 2010-07-30 Commissariat Energie Atomique Composant de connexion muni d'inserts creux.
TWI455263B (zh) * 2009-02-16 2014-10-01 財團法人工業技術研究院 晶片封裝結構及晶片封裝方法
JP5786273B2 (ja) * 2009-12-28 2015-09-30 オムロン株式会社 赤外線センサ及び赤外線センサモジュール
US8546921B2 (en) * 2010-08-24 2013-10-01 Qualcomm Incorporated Hybrid multilayer substrate
FR2977370B1 (fr) * 2011-06-30 2013-11-22 Commissariat Energie Atomique Composant de connexion muni d'inserts creux
DE102011081641B4 (de) * 2011-08-26 2014-11-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Sensor und Verfahren zum Herstellen eines Sensors
WO2013059317A1 (fr) * 2011-10-17 2013-04-25 Amphenol Corporation Connecteur électrique à blindage hybride
DE102012216618A1 (de) * 2012-09-18 2014-03-20 Robert Bosch Gmbh Anordnung von mindestens zwei Wafern zum Detektieren von elektromagnetischer Strahlung und Verfahren zum Herstellen der Anordnung
US9437565B2 (en) * 2014-12-30 2016-09-06 Advanced Seminconductor Engineering, Inc. Semiconductor substrate and semiconductor package structure having the same
US9540228B2 (en) * 2015-01-29 2017-01-10 Invensense, Inc. MEMS-CMOS device that minimizes outgassing and methods of manufacture

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US20210280628A1 (en) 2021-09-09
WO2018033689A1 (fr) 2018-02-22
FR3055166A1 (fr) 2018-02-23
CN109791920A (zh) 2019-05-21
EP3501042A1 (fr) 2019-06-26

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