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FR3052910B1 - Procede de projection d'un faisceau de particules sur un substrat avec correction des effets de diffusion - Google Patents

Procede de projection d'un faisceau de particules sur un substrat avec correction des effets de diffusion Download PDF

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Publication number
FR3052910B1
FR3052910B1 FR1655610A FR1655610A FR3052910B1 FR 3052910 B1 FR3052910 B1 FR 3052910B1 FR 1655610 A FR1655610 A FR 1655610A FR 1655610 A FR1655610 A FR 1655610A FR 3052910 B1 FR3052910 B1 FR 3052910B1
Authority
FR
France
Prior art keywords
correction
projecting
particles
substrate
broadcast effects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1655610A
Other languages
English (en)
Other versions
FR3052910A1 (fr
Inventor
Christophe Constancias
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1655610A priority Critical patent/FR3052910B1/fr
Priority to US16/307,465 priority patent/US10923319B2/en
Priority to JP2018565826A priority patent/JP2019518337A/ja
Priority to KR1020187035972A priority patent/KR102495154B1/ko
Priority to EP17729836.1A priority patent/EP3472851A1/fr
Priority to PCT/EP2017/063657 priority patent/WO2017215976A1/fr
Publication of FR3052910A1 publication Critical patent/FR3052910A1/fr
Application granted granted Critical
Publication of FR3052910B1 publication Critical patent/FR3052910B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2061—Electron scattering (proximity) correction or prevention methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2111/00—Details relating to CAD techniques
    • G06F2111/08—Probabilistic or stochastic CAD
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31754—Lithography using particular beams or near-field effects, e.g. STM-like techniques using electron beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
FR1655610A 2016-06-16 2016-06-16 Procede de projection d'un faisceau de particules sur un substrat avec correction des effets de diffusion Expired - Fee Related FR3052910B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1655610A FR3052910B1 (fr) 2016-06-16 2016-06-16 Procede de projection d'un faisceau de particules sur un substrat avec correction des effets de diffusion
US16/307,465 US10923319B2 (en) 2016-06-16 2017-06-06 Method for projecting a beam of particles onto a substrate with correction of scattering effects
JP2018565826A JP2019518337A (ja) 2016-06-16 2017-06-06 散乱効果を補正し基板に粒子ビームを投射する方法
KR1020187035972A KR102495154B1 (ko) 2016-06-16 2017-06-06 산란 효과들의 수정에 의해 기판 상으로의 입자들의 빔을 투사하기 위한 방법
EP17729836.1A EP3472851A1 (fr) 2016-06-16 2017-06-06 Procede de projection d'un faisceau de particules sur un substrat avec correction des effets de diffusion
PCT/EP2017/063657 WO2017215976A1 (fr) 2016-06-16 2017-06-06 Procede de projection d'un faisceau de particules sur un substrat avec correction des effets de diffusion

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1655610 2016-06-16
FR1655610A FR3052910B1 (fr) 2016-06-16 2016-06-16 Procede de projection d'un faisceau de particules sur un substrat avec correction des effets de diffusion

Publications (2)

Publication Number Publication Date
FR3052910A1 FR3052910A1 (fr) 2017-12-22
FR3052910B1 true FR3052910B1 (fr) 2018-06-22

Family

ID=56943700

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1655610A Expired - Fee Related FR3052910B1 (fr) 2016-06-16 2016-06-16 Procede de projection d'un faisceau de particules sur un substrat avec correction des effets de diffusion

Country Status (6)

Country Link
US (1) US10923319B2 (fr)
EP (1) EP3472851A1 (fr)
JP (1) JP2019518337A (fr)
KR (1) KR102495154B1 (fr)
FR (1) FR3052910B1 (fr)
WO (1) WO2017215976A1 (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4159512B2 (ja) * 2004-05-31 2008-10-01 日本電気株式会社 画像パターン補正方法、及びそれを適用した模擬画像生成方法、並びにパターン外観検査方法
FR2948030B1 (fr) * 2009-07-15 2012-12-14 Commissariat Energie Atomique Procede de calcul de doses deposees par un rayonnement ionisant
FR2959026B1 (fr) * 2010-04-15 2012-06-01 Commissariat Energie Atomique Procede de lithographie a optimisation combinee de l'energie rayonnee et de la geometrie de dessin
JP5537488B2 (ja) * 2011-04-15 2014-07-02 株式会社日立ハイテクノロジーズ 荷電粒子顕微鏡装置および画像撮像方法
KR20120136751A (ko) * 2011-06-10 2012-12-20 삼성전자주식회사 전자빔 리소그라피에서 ｐｓｆ 측정 방법
FR2989513B1 (fr) 2012-04-12 2015-04-17 Aselta Nanographics Procede de correction des effets de proximite electronique utilisant des fonctions de diffusion de type voigt
FR3010197B1 (fr) * 2013-08-28 2015-09-18 Aselta Nanographics Procede de correction des effets de proximite electronique

Also Published As

Publication number Publication date
US10923319B2 (en) 2021-02-16
EP3472851A1 (fr) 2019-04-24
JP2019518337A (ja) 2019-06-27
KR102495154B1 (ko) 2023-02-01
US20190304747A1 (en) 2019-10-03
KR20190018638A (ko) 2019-02-25
WO2017215976A1 (fr) 2017-12-21
FR3052910A1 (fr) 2017-12-22

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