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FR3051977B1 - HIGH ELECTRONIC MOBILITY DEVICE WITH INTEGRATED PASSIVE ELEMENTS - Google Patents

HIGH ELECTRONIC MOBILITY DEVICE WITH INTEGRATED PASSIVE ELEMENTS Download PDF

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Publication number
FR3051977B1
FR3051977B1 FR1654714A FR1654714A FR3051977B1 FR 3051977 B1 FR3051977 B1 FR 3051977B1 FR 1654714 A FR1654714 A FR 1654714A FR 1654714 A FR1654714 A FR 1654714A FR 3051977 B1 FR3051977 B1 FR 3051977B1
Authority
FR
France
Prior art keywords
passive elements
mobility device
integrated passive
high electronic
electronic mobility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1654714A
Other languages
French (fr)
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FR3051977A1 (en
Inventor
Pascal Guenard
Laurent Guillot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics France SAS
Original Assignee
Exagan SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exagan SAS filed Critical Exagan SAS
Priority to FR1654714A priority Critical patent/FR3051977B1/en
Priority to PCT/FR2017/051314 priority patent/WO2017203185A1/en
Publication of FR3051977A1 publication Critical patent/FR3051977A1/en
Application granted granted Critical
Publication of FR3051977B1 publication Critical patent/FR3051977B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

L'invention concerne un dispositif (110) comprenant : • Une couche active comportant un empilement de couches (1a, 1b) apte à développer une couche de gaz d'électrons à deux dimensions (2) ; • Une première électrode de source et une première électrode de drain chacune en contact avec la couche active, une région active s'étendant entre la première électrode de source et la première électrode de drain ; • Une première électrode de grille entre les premières électrodes de source et de drain ; Le dispositif est remarquable en ce qu'il comprend au moins un élément passif (7) formé dans la couche active par un segment de la couche de gaz d'électrons à deux dimensions, en dehors de la région active, et présentant deux bornes (8,9).The invention relates to a device (110) comprising: • An active layer comprising a stack of layers (1a, 1b) capable of developing a two-dimensional electron gas layer (2); • A first source electrode and a first drain electrode each in contact with the active layer, an active region extending between the first source electrode and the first drain electrode; • A first gate electrode between the first source and drain electrodes; The device is remarkable in that it comprises at least one passive element (7) formed in the active layer by a segment of the two-dimensional electron gas layer, outside the active region, and having two terminals (8, 9).

FR1654714A 2016-05-26 2016-05-26 HIGH ELECTRONIC MOBILITY DEVICE WITH INTEGRATED PASSIVE ELEMENTS Active FR3051977B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1654714A FR3051977B1 (en) 2016-05-26 2016-05-26 HIGH ELECTRONIC MOBILITY DEVICE WITH INTEGRATED PASSIVE ELEMENTS
PCT/FR2017/051314 WO2017203185A1 (en) 2016-05-26 2017-05-26 High-electron-mobility device with integrated passive elements

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1654714 2016-05-26
FR1654714A FR3051977B1 (en) 2016-05-26 2016-05-26 HIGH ELECTRONIC MOBILITY DEVICE WITH INTEGRATED PASSIVE ELEMENTS

Publications (2)

Publication Number Publication Date
FR3051977A1 FR3051977A1 (en) 2017-12-01
FR3051977B1 true FR3051977B1 (en) 2018-11-16

Family

ID=56943660

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1654714A Active FR3051977B1 (en) 2016-05-26 2016-05-26 HIGH ELECTRONIC MOBILITY DEVICE WITH INTEGRATED PASSIVE ELEMENTS

Country Status (2)

Country Link
FR (1) FR3051977B1 (en)
WO (1) WO2017203185A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11038048B2 (en) 2019-10-01 2021-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Gallium nitride-on-silicon devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093617A (en) * 2004-09-27 2006-04-06 Matsushita Electric Ind Co Ltd Semiconductor resistance element and manufacturing method thereof
US8449180B2 (en) * 2006-01-27 2013-05-28 Adarsh Sandhu Temperature sensor
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
US8587158B2 (en) * 2009-02-06 2013-11-19 Aerospace Optics, Inc. Illuminated pushbutton switch with configurable electronic latching features
US8368121B2 (en) * 2010-06-21 2013-02-05 Power Integrations, Inc. Enhancement-mode HFET circuit arrangement having high power and high threshold voltage
KR101919422B1 (en) * 2012-09-28 2019-02-08 삼성전자주식회사 Nitride semiconductor based power converting device
JP2014078570A (en) * 2012-10-09 2014-05-01 Toshiba Corp Rectifier circuit and semiconductor device
EP2784816A1 (en) * 2013-03-28 2014-10-01 Nxp B.V. Cascode semiconductor device
US9344021B2 (en) * 2014-09-11 2016-05-17 GM Global Technology Operations LLC Inverter circuit for an electric machine

Also Published As

Publication number Publication date
FR3051977A1 (en) 2017-12-01
WO2017203185A1 (en) 2017-11-30

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