FR2935618B1 - PROCESS FOR FORMING ANTI-ADHERENT COATING BASED ON SILICON CARBIDE - Google Patents
PROCESS FOR FORMING ANTI-ADHERENT COATING BASED ON SILICON CARBIDEInfo
- Publication number
- FR2935618B1 FR2935618B1 FR0855971A FR0855971A FR2935618B1 FR 2935618 B1 FR2935618 B1 FR 2935618B1 FR 0855971 A FR0855971 A FR 0855971A FR 0855971 A FR0855971 A FR 0855971A FR 2935618 B1 FR2935618 B1 FR 2935618B1
- Authority
- FR
- France
- Prior art keywords
- silicon carbide
- coating based
- adherent coating
- forming anti
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000000181 anti-adherent effect Effects 0.000 title 1
- 239000003911 antiadherent Substances 0.000 title 1
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
- C23C8/16—Oxidising using oxygen-containing compounds, e.g. water, carbon dioxide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Carbon And Carbon Compounds (AREA)
- Ceramic Products (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Catalysts (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0855971A FR2935618B1 (en) | 2008-09-05 | 2008-09-05 | PROCESS FOR FORMING ANTI-ADHERENT COATING BASED ON SILICON CARBIDE |
| US13/062,456 US20110268958A1 (en) | 2008-09-05 | 2009-09-03 | Process for forming a non-stick coating based on silicon carbide |
| PCT/FR2009/051666 WO2010026342A1 (en) | 2008-09-05 | 2009-09-03 | Process for forming a non-stick coating based on silicon carbide |
| KR1020117007630A KR101451322B1 (en) | 2008-09-05 | 2009-09-03 | Process for forming a non-stick coating based on silicon carbide |
| BRPI0918852A BRPI0918852A2 (en) | 2008-09-05 | 2009-09-03 | a useful process for forming a porous, non-stick coating of silicon carbide |
| CN200980134956.8A CN102144053B (en) | 2008-09-05 | 2009-09-03 | Process for forming a non-stick coating based on silicon carbide |
| EP09741363A EP2347037A1 (en) | 2008-09-05 | 2009-09-03 | Process for forming a non-stick coating based on silicon carbide |
| JP2011525597A JP5492208B2 (en) | 2008-09-05 | 2009-09-03 | Method for producing non-adhesive film mainly composed of silicon carbide |
| RU2011107880/05A RU2479679C2 (en) | 2008-09-05 | 2009-09-03 | Method for obtaining non-adhesive coating on basis of silicon carbide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0855971A FR2935618B1 (en) | 2008-09-05 | 2008-09-05 | PROCESS FOR FORMING ANTI-ADHERENT COATING BASED ON SILICON CARBIDE |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2935618A1 FR2935618A1 (en) | 2010-03-12 |
| FR2935618B1 true FR2935618B1 (en) | 2011-04-01 |
Family
ID=40429256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0855971A Expired - Fee Related FR2935618B1 (en) | 2008-09-05 | 2008-09-05 | PROCESS FOR FORMING ANTI-ADHERENT COATING BASED ON SILICON CARBIDE |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20110268958A1 (en) |
| EP (1) | EP2347037A1 (en) |
| JP (1) | JP5492208B2 (en) |
| KR (1) | KR101451322B1 (en) |
| CN (1) | CN102144053B (en) |
| BR (1) | BRPI0918852A2 (en) |
| FR (1) | FR2935618B1 (en) |
| RU (1) | RU2479679C2 (en) |
| WO (1) | WO2010026342A1 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2979638A1 (en) * | 2011-09-05 | 2013-03-08 | Commissariat Energie Atomique | DEVICE FOR MANUFACTURING CRYSTALLINE MATERIAL FROM A NON-UNIFORM THERMAL RESISTANCE CUP |
| CN102861711B (en) * | 2012-06-15 | 2014-04-16 | 江苏同力机械有限公司 | Spraying process for non-sticky coating of elevator or escalator surface |
| JP5933834B2 (en) * | 2012-06-25 | 2016-06-15 | シリコー マテリアルズ インコーポレイテッド | Lining for the surface of a refractory crucible for the purification of silicon melts and methods for the purification and further directional solidification of the silicon melt using the crucible for melting |
| FR3010715B1 (en) * | 2013-09-16 | 2017-03-10 | Commissariat Energie Atomique | LOW PERMEABLE COATING SUBSTRATE FOR SILICON SOLIDIFICATION |
| FR3026414B1 (en) * | 2014-09-26 | 2019-04-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | CREUSET FOR CRYSTALLIZING MULTI-CRYSTALLINE SILICON OR QUASI-MONOCRYSTALLINE BY REPEATING ON GERM |
| KR101673720B1 (en) * | 2014-12-30 | 2016-11-23 | 현대자동차주식회사 | Method for manufacturing antifogging porous silica thin film |
| US10801097B2 (en) * | 2015-12-23 | 2020-10-13 | Praxair S.T. Technology, Inc. | Thermal spray coatings onto non-smooth surfaces |
| CN107382364A (en) * | 2017-06-30 | 2017-11-24 | 长兴泓矿炉料有限公司 | A kind of light weight low-loss carborundum series refractory material and preparation method thereof |
| CN107311671A (en) * | 2017-06-30 | 2017-11-03 | 长兴泓矿炉料有限公司 | A kind of oxidation resistant carbon SiClx series refractory material and preparation method thereof |
| JP7145773B2 (en) * | 2019-01-29 | 2022-10-03 | 株式会社フジミインコーポレーテッド | coated particles |
| RU2728985C1 (en) * | 2019-12-30 | 2020-08-03 | Федеральное государственное автономное образовательное учреждение высшего образования "Сибирский федеральный университет" | Method of feeding electrolytic cell with alumina and device for its implementation |
| EP4129958B1 (en) * | 2021-08-03 | 2024-01-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for producing coated substrates and coated substrate and use thereof |
| FI4129956T3 (en) * | 2021-08-03 | 2023-11-10 | Fraunhofer Ges Forschung | A method for making coated substrates and a coated substrate and its use |
| FR3126999B1 (en) | 2021-09-10 | 2024-04-26 | Commissariat Energie Atomique | Process for manufacturing a silicon ingot from surface oxidized seeds |
| CN117510235B (en) * | 2023-11-24 | 2025-10-31 | 上海工程技术大学 | Preparation method of super-hydrophilic-underwater super-oleophobic silicon carbide ceramic membrane |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6491971B2 (en) * | 2000-11-15 | 2002-12-10 | G.T. Equipment Technologies, Inc | Release coating system for crucibles |
| JP2002321037A (en) * | 2001-04-26 | 2002-11-05 | Kyocera Corp | Silicon casting method |
| JP4116914B2 (en) * | 2003-03-27 | 2008-07-09 | 京セラ株式会社 | Silicon casting mold manufacturing method, silicon ingot manufacturing method |
| US20040211496A1 (en) * | 2003-04-25 | 2004-10-28 | Crystal Systems, Inc. | Reusable crucible for silicon ingot growth |
| WO2006107769A2 (en) * | 2005-04-01 | 2006-10-12 | Gt Solar Incorporated | Solidification of crystalline silicon from reusable crucible molds |
| US7678700B2 (en) * | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
-
2008
- 2008-09-05 FR FR0855971A patent/FR2935618B1/en not_active Expired - Fee Related
-
2009
- 2009-09-03 KR KR1020117007630A patent/KR101451322B1/en not_active Expired - Fee Related
- 2009-09-03 BR BRPI0918852A patent/BRPI0918852A2/en not_active IP Right Cessation
- 2009-09-03 US US13/062,456 patent/US20110268958A1/en not_active Abandoned
- 2009-09-03 WO PCT/FR2009/051666 patent/WO2010026342A1/en not_active Ceased
- 2009-09-03 JP JP2011525597A patent/JP5492208B2/en not_active Expired - Fee Related
- 2009-09-03 CN CN200980134956.8A patent/CN102144053B/en not_active Expired - Fee Related
- 2009-09-03 EP EP09741363A patent/EP2347037A1/en not_active Withdrawn
- 2009-09-03 RU RU2011107880/05A patent/RU2479679C2/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP2347037A1 (en) | 2011-07-27 |
| RU2479679C2 (en) | 2013-04-20 |
| RU2011107880A (en) | 2012-10-10 |
| KR101451322B1 (en) | 2014-10-15 |
| US20110268958A1 (en) | 2011-11-03 |
| CN102144053A (en) | 2011-08-03 |
| CN102144053B (en) | 2014-03-26 |
| JP2012501944A (en) | 2012-01-26 |
| JP5492208B2 (en) | 2014-05-14 |
| FR2935618A1 (en) | 2010-03-12 |
| BRPI0918852A2 (en) | 2015-12-08 |
| WO2010026342A1 (en) | 2010-03-11 |
| KR20110069043A (en) | 2011-06-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20100531 |
|
| RN | Application for restoration | ||
| FC | Decision of inpi director general to approve request for restoration | ||
| PLFP | Fee payment |
Year of fee payment: 8 |
|
| ST | Notification of lapse |
Effective date: 20170531 |