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FR2998581B1 - IMPROVING THE GROWTH SPEED OF ZINC OXIDE FILMS USING DIETHYLZINC STABILIZED BY ANTHRACENE - Google Patents

IMPROVING THE GROWTH SPEED OF ZINC OXIDE FILMS USING DIETHYLZINC STABILIZED BY ANTHRACENE

Info

Publication number
FR2998581B1
FR2998581B1 FR1261162A FR1261162A FR2998581B1 FR 2998581 B1 FR2998581 B1 FR 2998581B1 FR 1261162 A FR1261162 A FR 1261162A FR 1261162 A FR1261162 A FR 1261162A FR 2998581 B1 FR2998581 B1 FR 2998581B1
Authority
FR
France
Prior art keywords
diethylzinc
zinc oxide
anthracene
stabilized
improving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1261162A
Other languages
French (fr)
Other versions
FR2998581A1 (en
Inventor
Christophe Lachaud
Henri Chevrel
Kazutaka Yanagita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide SA, LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical Air Liquide SA
Priority to FR1261162A priority Critical patent/FR2998581B1/en
Publication of FR2998581A1 publication Critical patent/FR2998581A1/en
Application granted granted Critical
Publication of FR2998581B1 publication Critical patent/FR2998581B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Utilisation d'une composition comprenant du diéthylzinc et un composé X choisi parmi les composés de formule (III) : R1 représente indépendamment un hydrogène, un radical alkyle, un radical oléfine conjugué avec le noyau aromatique, un radical aryle substitué ou non chacun ayant de 1 à 12 atomes de carbone dans un procédé de dépôt d'un film d'oxyde de zinc.Use of a composition comprising diethylzinc and a compound X chosen from the compounds of formula (III): R1 independently represents a hydrogen, an alkyl radical, an olefin radical conjugated with the aromatic ring, a substituted or unsubstituted aryl radical each having 1 to 12 carbon atoms in a zinc oxide film deposition process.

FR1261162A 2012-11-23 2012-11-23 IMPROVING THE GROWTH SPEED OF ZINC OXIDE FILMS USING DIETHYLZINC STABILIZED BY ANTHRACENE Active FR2998581B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1261162A FR2998581B1 (en) 2012-11-23 2012-11-23 IMPROVING THE GROWTH SPEED OF ZINC OXIDE FILMS USING DIETHYLZINC STABILIZED BY ANTHRACENE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1261162A FR2998581B1 (en) 2012-11-23 2012-11-23 IMPROVING THE GROWTH SPEED OF ZINC OXIDE FILMS USING DIETHYLZINC STABILIZED BY ANTHRACENE

Publications (2)

Publication Number Publication Date
FR2998581A1 FR2998581A1 (en) 2014-05-30
FR2998581B1 true FR2998581B1 (en) 2015-10-23

Family

ID=47833186

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1261162A Active FR2998581B1 (en) 2012-11-23 2012-11-23 IMPROVING THE GROWTH SPEED OF ZINC OXIDE FILMS USING DIETHYLZINC STABILIZED BY ANTHRACENE

Country Status (1)

Country Link
FR (1) FR2998581B1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006183117A (en) * 2004-12-28 2006-07-13 Showa Shell Sekiyu Kk Manufacturing method of ZnO-based transparent conductive film by MOCVD (metal organic chemical vapor deposition)
WO2011027549A1 (en) * 2009-09-02 2011-03-10 東ソー・ファインケム株式会社 Diethylzinc composition, method for heat stabilization, and compound for heat stabilization
JP5752356B2 (en) * 2010-01-15 2015-07-22 東ソー・ファインケム株式会社 Method for thermal stabilization of diethylzinc and diethylzinc composition

Also Published As

Publication number Publication date
FR2998581A1 (en) 2014-05-30

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