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FR2996057B1 - Composant microelectronique et son procede de realisation - Google Patents

Composant microelectronique et son procede de realisation

Info

Publication number
FR2996057B1
FR2996057B1 FR1359172A FR1359172A FR2996057B1 FR 2996057 B1 FR2996057 B1 FR 2996057B1 FR 1359172 A FR1359172 A FR 1359172A FR 1359172 A FR1359172 A FR 1359172A FR 2996057 B1 FR2996057 B1 FR 2996057B1
Authority
FR
France
Prior art keywords
producing
same
microelectronic component
microelectronic
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1359172A
Other languages
English (en)
Other versions
FR2996057A1 (fr
Inventor
Christoph Schelling
Ando Feyh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2996057A1 publication Critical patent/FR2996057A1/fr
Application granted granted Critical
Publication of FR2996057B1 publication Critical patent/FR2996057B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/124Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50Devices controlled by mechanical forces, e.g. pressure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0228Inertial sensors
    • B81B2201/025Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR1359172A 2012-09-24 2013-09-24 Composant microelectronique et son procede de realisation Expired - Fee Related FR2996057B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012217133.9A DE102012217133A1 (de) 2012-09-24 2012-09-24 Mikroelektronisches Bauelement und entsprechendes Herstellungsverfahren

Publications (2)

Publication Number Publication Date
FR2996057A1 FR2996057A1 (fr) 2014-03-28
FR2996057B1 true FR2996057B1 (fr) 2017-06-23

Family

ID=50235200

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1359172A Expired - Fee Related FR2996057B1 (fr) 2012-09-24 2013-09-24 Composant microelectronique et son procede de realisation

Country Status (5)

Country Link
US (1) US9082882B2 (fr)
KR (1) KR20140040025A (fr)
CN (1) CN103663359B (fr)
DE (1) DE102012217133A1 (fr)
FR (1) FR2996057B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8704314B2 (en) * 2007-12-06 2014-04-22 Massachusetts Institute Of Technology Mechanical memory transistor
DE102011083644A1 (de) * 2011-09-28 2013-03-28 Robert Bosch Gmbh Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren
CN106865485B (zh) * 2015-12-10 2021-09-21 联华电子股份有限公司 微机电结构及其制作方法
US9899527B2 (en) * 2015-12-31 2018-02-20 Globalfoundries Singapore Pte. Ltd. Integrated circuits with gaps
DE102016203239B4 (de) * 2016-02-29 2025-02-27 Robert Bosch Gmbh MEMS-Sensor mit einer Heizeinrichtung an einer Membran und entsprechendes Herstellungsverfahren
CN106365106B (zh) * 2016-09-23 2018-09-04 杭州士兰集成电路有限公司 Mems器件及其制造方法
DE102018221102B4 (de) 2018-12-06 2020-06-25 Robert Bosch Gmbh Inertialsensor mit einem beweglichen Detektionselement eines Feldeffekttransistors und Verfahren zum Herstellen desselben
US11016055B2 (en) * 2019-07-09 2021-05-25 Globalfoundries Singapore Pte. Ltd. Sensors with a front-end-of-line solution-receiving cavity
DE102023211595A1 (de) * 2023-11-21 2025-11-13 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Stresskompensation einer im Bereich eines Hohlraums freitragend angeordneten Siliziumstruktur

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4332843C2 (de) * 1993-09-27 1997-04-24 Siemens Ag Verfahren zur Herstellung einer mikromechanischen Vorrichtung und mikromechanische Vorrichtung
EP0822415B1 (fr) * 1996-07-31 2003-03-26 STMicroelectronics S.r.l. Capteur d'accélération capacitif à semi-conducteur intégré et procédé pour sa fabrication
DE19844676C1 (de) 1998-09-29 2000-08-03 Siemens Ag Mikromechanischer Sensor auf Basis des Feldeffekts und dessen Verwendung
JP4825778B2 (ja) * 2007-11-16 2011-11-30 株式会社日立製作所 半導体装置およびその製造方法
WO2009128084A1 (fr) * 2008-04-15 2009-10-22 Indian Institute Of Science Capteur tec de déviation élastique sous le seuil pour détecter une pression/force, procédé et système à cet effet
FR2932791B1 (fr) 2008-06-23 2010-06-18 Commissariat Energie Atomique Procede de realisation d'une structure comportant un element mobile au moyen d'une couche sacrificielle heterogene.
US8823007B2 (en) 2009-10-28 2014-09-02 MCube Inc. Integrated system on chip using multiple MEMS and CMOS devices
DE102009029217A1 (de) 2009-09-04 2011-03-10 Robert Bosch Gmbh Inertialsensor mit einem Feldeffekttransistor
US8614492B2 (en) * 2009-10-26 2013-12-24 International Business Machines Corporation Nanowire stress sensors, stress sensor integrated circuits, and design structures for a stress sensor integrated circuit
US8502279B2 (en) * 2011-05-16 2013-08-06 Globalfoundries Singapore Pte. Ltd. Nano-electro-mechanical system (NEMS) structures with actuatable semiconductor fin on bulk substrates
FR2977885A1 (fr) * 2011-07-12 2013-01-18 Commissariat Energie Atomique Procede de realisation d'une structure a electrode enterree par report direct et structure ainsi obtenue
US8525278B2 (en) * 2011-08-19 2013-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS device having chip scale packaging

Also Published As

Publication number Publication date
CN103663359A (zh) 2014-03-26
DE102012217133A1 (de) 2014-03-27
KR20140040025A (ko) 2014-04-02
US9082882B2 (en) 2015-07-14
US20140084349A1 (en) 2014-03-27
FR2996057A1 (fr) 2014-03-28
CN103663359B (zh) 2017-06-09

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