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FR2989520B1 - Procede de realisation d'une cellule photovoltaique a heterojonction - Google Patents

Procede de realisation d'une cellule photovoltaique a heterojonction

Info

Publication number
FR2989520B1
FR2989520B1 FR1201064A FR1201064A FR2989520B1 FR 2989520 B1 FR2989520 B1 FR 2989520B1 FR 1201064 A FR1201064 A FR 1201064A FR 1201064 A FR1201064 A FR 1201064A FR 2989520 B1 FR2989520 B1 FR 2989520B1
Authority
FR
France
Prior art keywords
producing
photovoltaic cell
heterojunction photovoltaic
heterojunction
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1201064A
Other languages
English (en)
Other versions
FR2989520A1 (fr
Inventor
Samuel Gall
Maria Delfina Munoz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1201064A priority Critical patent/FR2989520B1/fr
Priority to EP13722481.2A priority patent/EP2837037A1/fr
Priority to PCT/FR2013/000097 priority patent/WO2013153293A1/fr
Priority to US14/394,410 priority patent/US9293608B2/en
Publication of FR2989520A1 publication Critical patent/FR2989520A1/fr
Application granted granted Critical
Publication of FR2989520B1 publication Critical patent/FR2989520B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
FR1201064A 2012-04-11 2012-04-11 Procede de realisation d'une cellule photovoltaique a heterojonction Active FR2989520B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1201064A FR2989520B1 (fr) 2012-04-11 2012-04-11 Procede de realisation d'une cellule photovoltaique a heterojonction
EP13722481.2A EP2837037A1 (fr) 2012-04-11 2013-04-10 Procédé de réalisation d'une cellule photovoltaïque à hétérojonction
PCT/FR2013/000097 WO2013153293A1 (fr) 2012-04-11 2013-04-10 Procédé de réalisation d'une cellule photovoltaïque à hétérojonction
US14/394,410 US9293608B2 (en) 2012-04-11 2013-04-10 Method for producing a photovoltaic cell having a heterojunction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1201064A FR2989520B1 (fr) 2012-04-11 2012-04-11 Procede de realisation d'une cellule photovoltaique a heterojonction

Publications (2)

Publication Number Publication Date
FR2989520A1 FR2989520A1 (fr) 2013-10-18
FR2989520B1 true FR2989520B1 (fr) 2014-04-04

Family

ID=48430826

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1201064A Active FR2989520B1 (fr) 2012-04-11 2012-04-11 Procede de realisation d'une cellule photovoltaique a heterojonction

Country Status (4)

Country Link
US (1) US9293608B2 (fr)
EP (1) EP2837037A1 (fr)
FR (1) FR2989520B1 (fr)
WO (1) WO2013153293A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116364788A (zh) * 2021-12-27 2023-06-30 隆基绿能科技股份有限公司 一种太阳能电池及其电极
CN117001146A (zh) * 2022-06-10 2023-11-07 广东小天才科技有限公司 制备防眩光盖板的方法及防眩光盖板

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10046170A1 (de) * 2000-09-19 2002-04-04 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht
DE102006040352B3 (de) * 2006-08-29 2007-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Aufbringen von elektrischen Kontakten auf halbleitende Substrate, halbleitendes Substrat und Verwendung des Verfahrens
DE102006046726A1 (de) * 2006-10-02 2008-04-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle mit strukturierter Rückseitenpassivierungsschicht aus SIOx und SINx sowie Verfahren zur Herstellung
JP2009152222A (ja) 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法
SG175752A1 (en) * 2009-04-21 2011-12-29 Tetrasun Inc High-efficiency solar cell structures and methods of manufacture
FR2957479B1 (fr) * 2010-03-12 2012-04-27 Commissariat Energie Atomique Procede de traitement d'un contact metallique realise sur un substrat
KR101188486B1 (ko) * 2010-12-08 2012-10-05 현대중공업 주식회사 이종접합형 태양전지의 전극 제조방법
US8927428B2 (en) * 2011-11-04 2015-01-06 E I Du Pont De Nemours And Company Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate

Also Published As

Publication number Publication date
FR2989520A1 (fr) 2013-10-18
EP2837037A1 (fr) 2015-02-18
US20150079721A1 (en) 2015-03-19
US9293608B2 (en) 2016-03-22
WO2013153293A1 (fr) 2013-10-17

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