[go: up one dir, main page]

FR2985601B1 - Procede de fabrication d'un substrat et structure semiconducteur - Google Patents

Procede de fabrication d'un substrat et structure semiconducteur

Info

Publication number
FR2985601B1
FR2985601B1 FR1250162A FR1250162A FR2985601B1 FR 2985601 B1 FR2985601 B1 FR 2985601B1 FR 1250162 A FR1250162 A FR 1250162A FR 1250162 A FR1250162 A FR 1250162A FR 2985601 B1 FR2985601 B1 FR 2985601B1
Authority
FR
France
Prior art keywords
semiconductor structure
manufacturing substrate
substrate
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1250162A
Other languages
English (en)
Other versions
FR2985601A1 (fr
Inventor
Oleg Kononchuk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1250162A priority Critical patent/FR2985601B1/fr
Priority to US14/369,594 priority patent/US9396987B2/en
Priority to CN201280066067.4A priority patent/CN104025281B/zh
Priority to PCT/IB2012/002793 priority patent/WO2013102788A1/fr
Publication of FR2985601A1 publication Critical patent/FR2985601A1/fr
Application granted granted Critical
Publication of FR2985601B1 publication Critical patent/FR2985601B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • H01L21/187Joining of semiconductor bodies for junction formation by direct bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Adhesives Or Adhesive Processes (AREA)
FR1250162A 2012-01-06 2012-01-06 Procede de fabrication d'un substrat et structure semiconducteur Active FR2985601B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1250162A FR2985601B1 (fr) 2012-01-06 2012-01-06 Procede de fabrication d'un substrat et structure semiconducteur
US14/369,594 US9396987B2 (en) 2012-01-06 2012-12-21 Method for fabricating a substrate and semiconductor structure
CN201280066067.4A CN104025281B (zh) 2012-01-06 2012-12-21 用于制造衬底以及半导体结构的方法
PCT/IB2012/002793 WO2013102788A1 (fr) 2012-01-06 2012-12-21 Procédé de fabrication d'un substrat et structure à semi-conducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1250162A FR2985601B1 (fr) 2012-01-06 2012-01-06 Procede de fabrication d'un substrat et structure semiconducteur

Publications (2)

Publication Number Publication Date
FR2985601A1 FR2985601A1 (fr) 2013-07-12
FR2985601B1 true FR2985601B1 (fr) 2016-06-03

Family

ID=47603855

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1250162A Active FR2985601B1 (fr) 2012-01-06 2012-01-06 Procede de fabrication d'un substrat et structure semiconducteur

Country Status (4)

Country Link
US (1) US9396987B2 (fr)
CN (1) CN104025281B (fr)
FR (1) FR2985601B1 (fr)
WO (1) WO2013102788A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9368436B2 (en) 2014-08-04 2016-06-14 Infineon Technologies Ag Source down semiconductor devices and methods of formation thereof
FR3034569B1 (fr) * 2015-04-02 2021-10-22 Soitec Silicon On Insulator Electrolyte solide avance et sa methode de fabrication
FR3079345B1 (fr) * 2018-03-26 2020-02-21 Soitec Procede de fabrication d'un substrat pour dispositif radiofrequence

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2225131C (fr) * 1996-12-18 2002-01-01 Canon Kabushiki Kaisha Procede de production d'articles semi-conducteurs
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
FR2817395B1 (fr) 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2835096B1 (fr) * 2002-01-22 2005-02-18 Procede de fabrication d'un substrat auto-porte en materiau semi-conducteur monocristallin
US20030064535A1 (en) * 2001-09-28 2003-04-03 Kub Francis J. Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate
US20040224482A1 (en) * 2001-12-20 2004-11-11 Kub Francis J. Method for transferring thin film layer material to a flexible substrate using a hydrogen ion splitting technique
FR2850390B1 (fr) * 2003-01-24 2006-07-14 Soitec Silicon On Insulator Procede d'elimination d'une zone peripherique de colle lors de la fabrication d'un substrat composite
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
US8222723B2 (en) * 2003-04-01 2012-07-17 Imbera Electronics Oy Electric module having a conductive pattern layer
US20050031822A1 (en) * 2003-08-07 2005-02-10 Mitsui Chemicals, Inc. Adhesive sheet
US7193294B2 (en) * 2004-12-03 2007-03-20 Toshiba Ceramics Co., Ltd. Semiconductor substrate comprising a support substrate which comprises a gettering site
JP4382103B2 (ja) * 2007-02-26 2009-12-09 富士通株式会社 キャパシタ素子、半導体装置、およびキャパシタ素子の製造方法
JP5166745B2 (ja) * 2007-03-07 2013-03-21 信越化学工業株式会社 単結晶シリコン太陽電池の製造方法
US20080233280A1 (en) * 2007-03-22 2008-09-25 Graciela Beatriz Blanchet Method to form a pattern of functional material on a substrate by treating a surface of a stamp
US8093136B2 (en) * 2007-12-28 2012-01-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
FR2926671B1 (fr) * 2008-01-17 2010-04-02 Soitec Silicon On Insulator Procede de traitement de defauts lors de collage de plaques
JP2009295695A (ja) * 2008-06-03 2009-12-17 Sumco Corp 半導体薄膜付基板およびその製造方法
JP5852444B2 (ja) * 2009-01-06 2016-02-03 1366 テクノロジーズ インク. 分配管を使用した、パターン化表面への液体含有材料の分配
KR101145074B1 (ko) * 2010-07-02 2012-05-11 이상윤 반도체 기판의 제조 방법 및 이를 이용한 반도체 장치의 제조 방법
CN102451812B (zh) * 2010-10-26 2014-02-19 展晶科技(深圳)有限公司 荧光粉涂布方法

Also Published As

Publication number Publication date
US20140374886A1 (en) 2014-12-25
CN104025281B (zh) 2018-04-24
FR2985601A1 (fr) 2013-07-12
US9396987B2 (en) 2016-07-19
WO2013102788A1 (fr) 2013-07-11
CN104025281A (zh) 2014-09-03

Similar Documents

Publication Publication Date Title
FR2973159B1 (fr) Procede de fabrication d'un substrat de base
EP2786404A4 (fr) Dispositif semi-conducteur et son procédé de fabrication
EP2924715A4 (fr) Procédé de fabrication de substrat composite et substrat composite
EP2525638A4 (fr) Substrat ayant ailettes intégrées et procédé de fabrication de substrat ayant ailettes intégrées
EP2793266A4 (fr) Dispositif semi-conducteur et procédé de fabrication d'un dispositif semi-conducteur
EP2782121A4 (fr) Dispositif semi-conducteur et procédé de fabrication du dispositif semi-conducteur
EP2741341A4 (fr) Dispositif à semi-conducteurs et son procédé de fabrication
EP2830403A4 (fr) Procédé de fabrication de substrat à radiateur intégré, et substrat à radiateur intégré
EP2974842A4 (fr) Substrat stratifié et son procédé de fabrication
EP2688102A4 (fr) Dispositif à semi-conducteurs et son procédé de fabrication
EP2741301A4 (fr) Procédé de fabrication de supraconducteur, supraconducteur et substrat de supraconducteur
EP2748840A4 (fr) Substrat semi-conducteur et procédé de fabrication associé
EP2960925A4 (fr) Substrat composite, dispositif semi-conducteur et procédé de fabrication de dispositif semi-conducteur
FR2996056B1 (fr) Composant microelectronique vertical et son procede de fabrication
EP2381752A4 (fr) Substrat de câblage multicouche, et procédé de fabrication de substrat de câblage multicouche
EP2775515A4 (fr) Dispositif semi-conducteur et son procédé de fabrication
EP2720254A4 (fr) Dispositif semi-conducteur et son procédé de fabrication
EP2843687A4 (fr) Procédé de fabrication de substrat composite, substrat composite, procédé de fabrication d'élément à semi-conducteurs et élément à semi-conducteurs
EP2858109A4 (fr) Module semi-conducteur et procédé de fabrication d'un module semi-conducteur
EP2722878A4 (fr) Dispositif semi-conducteur et procédé de fabrication d'un dispositif semi-conducteur
EP2704537A4 (fr) Substrat de câblage, substrat de câblage en plusieurs morceaux et procédé de fabrication de ceux-ci
EP2725619A4 (fr) Dispositif semi-conducteur et son procédé de fabrication
FR2988904B1 (fr) Structure semiconductrice optoelectronique a nanofils et procede de fabrication d'une telle structure
EP2927977A4 (fr) Substrat conducteur et son procédé de fabrication
FR2990561B1 (fr) Procede de fabrication de dispositif semi-conducteur et dispositif semi-conducteur;

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14